onsemi FGH80N60FDTU

Overview

FGH80N60FDTU from onsemi is a field-stop IGBT rated for 600 V collector-emitter voltage and 80 A continuous collector current at 25°C, featuring 1.8 V saturation voltage at 40 A/15 V gate drive and integrated fast recovery diode with 36 ns reverse recovery time at 25°C - deployed in high-efficiency PFC stages of telecom rectifiers.

For engineers reviewing the FGH80N60FDTU datasheet, pinout, applications, or equivalent options, key selection criteria include thermal resistance (R_JC = 0.43°C/W), total gate charge (120 nC), switching loss budget (E_ts = 2.28 mJ @ 25°C), and TO-247-3LD package compatibility with forced-air heatsinking in industrial power converters.

Technical Context

This IGBT employs field-stop technology to simultaneously minimize conduction and switching losses, enabling operation at higher frequencies than conventional punch-through devices while maintaining low V_CE(sat) across temperature. Its monolithic integration with a soft-recovery anti-parallel diode supports bidirectional energy handling in bridge configurations.

The device operates with ±20 V gate voltage tolerance and exhibits positive temperature coefficient for V_CE(sat), supporting paralleling without current-sharing resistors. Gate threshold voltage (4.5–7.0 V) ensures robust noise immunity in noisy EMI environments typical of induction heating inverters.

Key Specifications

Pinout & Package

FGH80N60FDTU uses the TO-247-3LD (Case 340CK) package with short leads, featuring isolated flange (collector) for direct thermal mounting and standardized 3-pin layout optimized for high-current PCB routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with IXGN80N60B3 and IKW80N60T, the FGH80N60FDTU delivers the lowest conduction loss and best thermal resistance but requires higher gate drive current - making it optimal for medium-frequency (20–50 kHz), high-current PFC and inverter applications where thermal management is feasible.

Availability

FGH80N60FDTU is available at Aetrix Electronics and suitable for telecom rectifiers, industrial induction heaters, and energy storage system (ESS) bidirectional converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for FGH80N60FDTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The FGH80N60FDTU belongs to onsemi's Field Stop IGBT product line engineered for high-power switching applications demanding low conduction and switching losses - particularly in PFC, induction heating, and telecom infrastructure.

FAQ

What is the maximum continuous collector current rating for FGH80N60FDTU at 100°C case temperature?

The FGH80N60FDTU supports 40 A continuous collector current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating from 80 A at 25°C reflects thermal limitations of the TO-247-3LD package with R_JC = 0.43°C/W - ensuring safe operation within 150°C maximum junction temperature under sustained load.

Does FGH80N60FDTU include an integrated diode, and what are its key recovery characteristics?

Yes, the FGH80N60FDTU integrates a fast recovery anti-parallel diode. At 25°C, it exhibits 36 ns reverse recovery time (t_rr), 2.6 A peak reverse recovery current (I_rr), and 46.8 nC reverse recovery charge (Q_rr). These values increase to 105 ns and 409 nC at 125°C, confirming soft recovery behavior suitable for hard-switched bridge topologies.

What gate drive voltage is recommended for reliable operation of FGH80N60FDTU?

FGH80N60FDTU is characterized at V_GE = 15 V for saturation performance, with absolute maximum gate-emitter voltage rated at ±20 V. A minimum of 13 V is required to ensure full enhancement across temperature, while 15–18 V provides optimal V_CE(sat) and noise immunity. Gate drive circuits must clamp negative transients below −5 V to prevent gate oxide stress.

How does the thermal resistance of FGH80N60FDTU impact heatsink design requirements?

With R_JC = 0.43°C/W, the FGH80N60FDTU transfers heat efficiently from junction to case. For example, at 116 W dissipation (T_C = 100°C), junction temperature reaches 150°C only if case-to-ambient thermal resistance remains ≤0.43°C/W - achievable with a 100 mm × 100 mm × 30 mm aluminum heatsink and 3 m/s airflow. This enables compact thermal designs in space-constrained telecom rectifiers.

Is FGH80N60FDTU compatible with standard TO-247 footprint layouts?

Yes, FGH80N60FDTU uses the industry-standard TO-247-3LD (Case 340CK) package with defined mechanical dimensions: 20.57 mm width, 15.62 mm length, and 4.70 mm height. Pin spacing matches JEDEC TO-247, allowing drop-in replacement in existing layouts designed for 3-pin TO-247 IGBTs or MOSFETs - provided flange isolation and thermal interface requirements are verified.