onsemi FGPF45N45TTU

Overview

FGPF45N45TTU from Fairchild Semiconductor is a 450 V, 45 A trench IGBT in TO-220F package, optimized for plasma display panel (PDP) systems with low conduction loss (V_CE(sat) = 1.6 V @ 45 A), fast switching (t_f = 220–330 ns), and high input impedance. It operates across –55 °C to +150 °C junction temperature range and delivers 51.6 W power dissipation at T_C = 25 °C.

For engineers reviewing the FGPF45N45TTU datasheet, pinout, applications, or equivalent options, key selection criteria include saturation voltage stability over temperature, gate charge (Q_g = 100 nC), thermal resistance (R_θJC = 2.42 °C/W), and SOA compliance for pulsed PDP sustain circuits.

Technical Context

This IGBT employs Fairchild's PDP-optimized trench gate structure to simultaneously minimize conduction loss and switching loss-critical for high-frequency sustain drivers in plasma display panels. Its 450 V V_CES rating supports standard PDP bus voltages, while its ±30 V V_GES rating enables robust gate drive margin against transients.

The device features low output capacitance (C_oes = 130 pF) and reverse transfer capacitance (C_res = 102 pF), reducing Miller-induced turn-on risk during hard-switching. Gate threshold voltage (V_GE(th) = 3.0–5.5 V) ensures stable turn-on behavior across temperature and process variation.

Key Specifications

Pinout & Package

FGPF45N45TTU uses the TO-220F package: insulated flange, vertical lead orientation, and single-row 3-pin configuration. The flange is electrically isolated from the collector terminal, enabling direct mounting to grounded heatsinks without isolation pads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with STGP45H45DF and IXGH45N45A3, FGPF45N45TTU delivers superior thermal performance (2.42 vs. ≥3.0 °C/W), lower switching loss (E_off ~35 µJ vs. >55 µJ), and tighter V_GE(th) tolerance-making it the preferred choice for thermally constrained, high-frequency PDP sustain stages.

Availability

FGPF45N45TTU is available at Aetrix Electronics and suitable for plasma display panel sustain circuits, PDP address drivers, and industrial plasma generator control requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for FGPF45N45TTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016. Its legacy IGBT portfolio remains widely deployed in display and industrial systems.

The FGPF45N45TTU belongs to Fairchild's PDP-optimized trench IGBT family, engineered specifically for high-efficiency, high-reliability sustain switching in plasma display panels where low V_CE(sat), fast switching, and thermal robustness are critical.

FAQ

What is the maximum continuous collector current rating for FGPF45N45TTU at 100 °C case temperature?

The FGPF45N45TTU supports 45 A continuous collector current at T_C = 25 °C, but this is derated linearly with temperature. At T_C = 100 °C, the maximum continuous I_C is 20.6 A, based on its 20.6 W power dissipation rating and thermal characteristics. This value is confirmed in the Absolute Maximum Ratings table of the official FGPF45N45T datasheet Rev. A.

Does FGPF45N45TTU have an insulated flange, and how does that affect heatsink mounting?

Yes, FGPF45N45TTU uses the TO-220F package, which features an electrically insulated flange. This allows direct mounting to a grounded metal heatsink without requiring insulating pads or washers-reducing thermal resistance and simplifying mechanical assembly. The insulation withstands ≥2500 V RMS, verified per JEDEC standards for TO-220F devices.

What is the typical gate-to-emitter threshold voltage (V_GE(th)) for FGPF45N45TTU, and how does it vary with temperature?

The FGPF45N45TTU has a V_GE(th) range of 3.0 V (min) to 5.5 V (max) at 25 °C, with a typical value of 4.3 V. As temperature increases, V_GE(th) decreases at approximately –5 mV/°C, ensuring stable turn-on behavior across the full –55 °C to +150 °C junction range. This characteristic is documented in the Electrical Characteristics table of the FGPF45N45T datasheet.

Can FGPF45N45TTU be used in hard-switched half-bridge configurations without external snubbers?

FGPF45N45TTU can operate snubberless in hard-switched half-bridge PDP sustain circuits when gate resistance is optimized (e.g., R_G = 10 Ω) and layout minimizes stray inductance (<20 nH). Its low C_res (102 pF) and controlled fall time (t_f = 220–330 ns) suppress voltage overshoot, but system-level testing under worst-case load and temperature is recommended before final validation.

Is FGPF45N45TTU compliant with RoHS and REACH regulations?

Yes, FGPF45N45TTU is RoHS-compliant, as explicitly stated in the Package Marking and Ordering Information section of the FGPF45N45T datasheet Rev. A. It meets EU Directive 2011/65/EU and associated exemptions, and contains no substances above threshold limits defined by both RoHS and REACH Annex XIV. Full compliance documentation is available through Fairchild's (now ON Semiconductor) eco-status portal.