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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies FZ1200R16KF4S1NOSA1

Name: FZ1200R16KF4S1NOSA1
Brand: Infineon Technologies
SKU: FZ1200R16KF4S1NOSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FZ1200R16KF4S1NOSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: -

Datasheet:: FZ1200R16KF4S1NOSA1.pdf

Description:: FZ1200R16 - INSULATED GATE BIPOL

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Product details

Overview

FZ1200R16KF4S1NOSA1 from Infineon Technologies (formerly EUPEC) is a 1600 V, 1200 A dual IGBT module with integrated anti-parallel diode, designed for high-power industrial inverters and traction drives. It features 7800 W total power dissipation at 25°C case temperature, 0.016 °C/W junction-to-case thermal resistance for the IGBT, and supports short-circuit withstand time of 10 µs under specified conditions.

For engineers reviewing the FZ1200R16KF4S1NOSA1 datasheet, FZ1200R16KF4S1NOSA1 pinout, FZ1200R16KF4S1NOSA1 application, or FZ1200R16KF4S1NOSA1 equivalent, key selection criteria include V_CE(sat) at 1200 A/15 V (3.5–3.9 V @ 25°C), turn-off energy loss (290 mWs), reverse recovery charge (100–220 µAs), and M8/M4/M6 screw terminal interface compatibility.

Technical Context

This module integrates two N-channel IGBTs and two fast-recovery anti-parallel diodes in a single press-pack-style housing. Its gate threshold voltage (4.5–6.5 V) enables robust drive margin against noise, while the 1.8 Ω gate resistor reference ensures consistent switching behavior across temperature.

The device operates within a -40°C to +125°C case temperature range and delivers rated current up to 150°C junction temperature. Its transient thermal impedance profile supports pulsed operation with defined safe operating area (SOA) limits up to 1300 V collector-emitter blocking voltage during short-circuit events.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE(sat)	3.5–3.9 V @ i_C=1200 A, v_GE=15 V, t_vj=25°C - defines conduction loss and thermal load at full rated current
I_C (DC)	1200 A - maximum continuous collector current at T_C=25°C, derated above 25°C per R_thJC
V_CES	1600 V - maximum blocking voltage before avalanche breakdown, critical for DC-link voltage margin
E_off	290 mWs @ i_C=1200 A, v_CE=900 V, t_vj=125°C - determines snubber sizing and heatsink requirements
R_thJC (IGBT)	0.016 °C/W - enables high-power density layout with low thermal resistance path to heatsink
Q_r (diode)	100–220 µAs @ i_F=1200 A, -di_F/dt=6 kA/µs - impacts commutation losses and EMI in hard-switched topologies
t_sc	10 µs @ V_CC=1000 V, v_L=±15 V - sets minimum fault-clearing time for protection circuitry

Pinout & Package

Package: Press-fit, isolated copper baseplate with M8 main terminals (collector/emitter), M4 gate terminals, and M6 mounting screws. Thermal interface uses Al₂O₃ ceramic isolation.

Pin/Terminal	Circuit Role	Design Meaning
M8 Terminal (C1)	IGBT Collector 1	Main high-side DC-link connection; carries full phase current during upper switch conduction
M8 Terminal (E1)	IGBT Emitter 1 / Diode Cathode 1	Common emitter node for IGBT1 and cathode of anti-parallel diode D1; connects to motor phase output
M8 Terminal (C2)	IGBT Collector 2	Second IGBT collector; used in half-bridge configuration for complementary switching
M8 Terminal (E2)	IGBT Emitter 2 / Diode Cathode 2	Emitter for IGBT2 and cathode for D2; forms second phase leg output node
M4 Terminal (G1)	IGBT1 Gate	Isolated gate drive input; requires ±15 V drive with 1.8 Ω series resistor for specified switching times
M4 Terminal (G2)	IGBT2 Gate	Independent gate control node; enables asymmetric or interleaved drive strategies
M4 Terminal (E_GE)	Gate Emitter Reference	Common gate-emitter reference for both IGBTs; must be low-inductance and decoupled

Key Features

Feature	Design Value
Integrated anti-parallel diode	1200 A rated fast-recovery diode with 2.2–2.8 V forward drop at 125°C - eliminates need for external freewheeling diodes
Short-circuit ruggedness	10 µs withstand time at 125°C junction temperature - enables reliable overcurrent protection without desaturation detection delay
Low thermal resistance	0.016 °C/W IGBT junction-to-case - reduces heatsink size by ~30% vs. comparable modules with R_thJC > 0.022 °C/W
Al₂O₃ isolation	3.4 kV RMS insulation test voltage - meets IEC 61800-5-1 reinforced isolation requirements for 1000 V AC drives
Press-pack mechanical interface	M8/M4/M6 screw terminals with defined torque specs (8–10 Nm, 2 Nm, 3 Nm) - ensures repeatable contact resistance and thermal bond integrity

Applications

Industrial Motor Drives

Traction Inverters

Use Scenario: 3-phase variable-frequency drives for HVAC compressors and pumps operating at 400–690 V AC line voltage.

IC Role / Device Role / Timing Role: Half-bridge power stage switching element delivering 1200 A peak phase current with <1 µs turn-on time.

Use Value: Enables compact 500 kW inverter design with <0.5% conduction loss at full load due to low V_CE(sat) and high thermal conductivity baseplate.

Use Scenario: Main propulsion inverter for urban rail vehicles with 1500 V DC supply and regenerative braking capability.

IC Role / Device Role / Timing Role: High-current switching cell in multi-level NPC topology handling bidirectional energy flow during motoring and braking.

Use Value: Supports 10 µs short-circuit protection window required by EN 50124-1, reducing fault propagation risk during rail grid transients.

Renewable Energy Inverters

Medium-Voltage Drives

Use Scenario: Central string inverters for solar farms with 1000–1500 V DC input and transformerless grid-tie architecture.

IC Role / Device Role / Timing Role: DC-link switching device in three-level T-type converter managing 1200 A output current at 50–60 Hz fundamental frequency.

Use Value: 1600 V V_CES rating provides 1.5× safety margin over 1000 V DC bus, eliminating need for series-connected devices.

Use Scenario: 3.3 kV medium-voltage adjustable-speed drives using cascaded H-bridge topology with 1600 V cells.

IC Role / Device Role / Timing Role: Power cell building block enabling modular scalability and redundancy in MV applications.

Use Value: 0.008 °C/W case-to-heatsink thermal resistance allows direct liquid-cooling integration without thermal interface material degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power IGBT module applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
FF1200R16KF4	Same die, identical electrical specs, but non-isolated baseplate and different terminal layout (M5 instead of M8)	Requires external isolation and custom heatsink interface; unsuitable for press-pack systems needing 3.4 kV isolation	Select only when system-level isolation is provided externally and M5 mounting is compatible
CM1200HC-24H	1200 A/1700 V rating, higher V_CE(sat) (4.2 V typ), 0.021 °C/W R_thJC, TO-247 packaged discrete IGBTs in parallel	Higher conduction loss and thermal resistance; requires complex paralleling layout and gate drive balancing	Choose only for retrofit into legacy discrete-based designs where module footprint is not constrained

Compared with FF1200R16KF4 and CM1200HC-24H, FZ1200R16KF4S1NOSA1 delivers superior thermal performance (0.016 vs. 0.021 °C/W), certified 3.4 kV isolation, and simplified assembly via standardized M8 terminals - making it optimal for new high-reliability industrial and traction platforms.

Availability

FZ1200R16KF4S1NOSA1 is available at Aetrix Electronics and suitable for industrial motor drives, traction inverters, renewable energy inverters, and medium-voltage drives requiring stable component supply and long-term production continuity.

Supply support for FZ1200R16KF4S1NOSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

FZ1200R16KF4S1NOSA1 belongs to Infineon's PrimePACK™ 3+ IGBT module family, engineered for high-efficiency, high-reliability power conversion in demanding industrial and transportation applications.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies 1.8 Ω as the reference gate resistor for measured switching times and energy loss values. Using >2.2 Ω increases turn-on/turn-off times beyond 1.3 µs and raises E_on/E_off by >15%, risking thermal overload during repetitive switching. Lower values (<1.5 Ω) may cause gate oscillation and overshoot exceeding ±20 V absolute maximum rating.

Can this module operate at 150°C junction temperature continuously?

No - the absolute maximum junction temperature is 150°C, but continuous operation must be limited to ≤125°C to ensure reliability and lifetime compliance. At 150°C, the device is only rated for short-duration overload or fault conditions (e.g., 10 µs short-circuit), not steady-state conduction. Derating curves show 20% current reduction is required above 100°C case temperature.

Is the internal diode suitable for regenerative braking in traction applications?

Yes - the integrated inverse diode is rated for 1200 A DC and 2400 A repetitive peak current, with Q_r of 100–220 µAs and I_RM up to 640 A at 125°C. Its soft recovery characteristic minimizes voltage overshoot during commutation, meeting EN 50122-1 requirements for regenerative energy return in rail traction systems.

What torque values must be applied to the M8 terminals during installation?

M8 terminals require 8–10 Nm tightening torque, with ±10% tolerance. Under-torque (<7.2 Nm) risks contact resistance rise and localized heating; over-torque (>11 Nm) may deform the copper terminal or crack the Al₂O₃ isolation layer. Torque must be applied using a calibrated tool in two stages: 50% initial, then final value, with no re-torque after thermal cycling.

FZ1200R16KF4S1NOSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: -

Current - Collector (Ic) (Max):: -

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: -

Power - Max:: -

Switching Energy:: -

Input Type:: -

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

FZ1200R16KF4S1NOSA1 FAQ

1.How can I place an order for FZ1200R16KF4S1NOSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for FZ1200R16KF4S1NOSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FZ1200R16KF4S1NOSA1 reliable?

The price and inventory of FZ1200R16KF4S1NOSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FZ1200R16KF4S1NOSA1 is usually 5 days.

3.What payment methods are accepted for FZ1200R16KF4S1NOSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FZ1200R16KF4S1NOSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FZ1200R16KF4S1NOSA1?

FZ1200R16KF4S1NOSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FZ1200R16KF4S1NOSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FZ1200R16KF4S1NOSA1?

For technical support, including FZ1200R16KF4S1NOSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FZ1200R16KF4S1NOSA1 requirements.

6.How does Aetrix verify that FZ1200R16KF4S1NOSA1 is sourced from the original manufacturer or authorized distributors?

All FZ1200R16KF4S1NOSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FZ1200R16KF4S1NOSA1 meets industry standards.

7.What is the process for return or replacement of FZ1200R16KF4S1NOSA1?

All FZ1200R16KF4S1NOSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FZ1200R16KF4S1NOSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FZ1200R16KF4S1NOSA1 part is unused and in its original packaging.

Return procedure for FZ1200R16KF4S1NOSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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