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Toshiba Semiconductor and Storage GT20N135SRA,S1E
- Part No.:
- GT20N135SRA,S1E
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single IGBTs
- Package:
- TO-247-3
- Datasheet:
-
GT20N135SRA,S1E.pdf
- Description:
- IGBT 1350V 40A TO247
- Quantity:
- Payment:
- Shipping:
Inventory:1
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Product details
Overview
GT20N135SRA from Toshiba Electronic Devices & Storage Corporation is a 1350 V, 40 A silicon N-channel RC-IGBT with monolithically integrated freewheeling diode, optimized for voltage-resonant inverter and soft-switching topologies in induction cooktops and home appliance power stages. It delivers VCE(sat) = 1.60 V (typ.) at IC = 20 A, tf = 0.25 µs (typ.), and operates up to Tj = 175 °C.
For engineers reviewing the GT20N135SRA datasheet, GT20N135SRA pinout, GT20N135SRA application, or GT20N135SRA equivalent, key selection criteria include its 6.5th-generation RC-IGBT architecture, TO-247 package thermal resistance of 0.48 °C/W, and guaranteed safe operating area under resonant switching conditions.
Technical Context
This RC-IGBT integrates a fast recovery freewheeling diode on the same die, enabling compact half-bridge designs without discrete diode placement. Its enhancement-mode gate drive requires only 15 V for full conduction and exhibits positive temperature coefficient for current sharing in parallel configurations.
The device supports high-frequency soft-switching with low Eoff = 0.28 mJ (Tc = 25 °C) and Cres = 35 pF, while maintaining VCE(sat) stability across Tc = 25–125 °C and supporting 1 ms peak current up to 80 A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 1350 V - Maximum blocking voltage for resonant inverter primary-side switching |
| IC (DC) | 40 A - Continuous collector current rating at Tc = 25 °C, defining steady-state power stage capacity |
| VCE(sat) | 1.60 V (typ., IC = 20 A, VGE = 15 V) - Low conduction loss enabling >97% efficiency in 3.3 kW induction heating stages |
| tf | 0.25 µs (typ., IC = 40 A) - Fast fall time supporting >50 kHz soft-switching operation with minimal tail current loss |
| Rth(j-c) | 0.48 °C/W - Junction-to-case thermal resistance enabling direct heatsink mounting without thermal interface material derating |
| Tj(max) | 175 °C - Maximum junction temperature allowing sustained operation in sealed induction cooktop enclosures |
| Eoff | 0.28 mJ (VCC = 300 V, IC = 40 A, RG = 39 Ω, Tc = 25 °C) - Low turn-off energy critical for ZVS/ZCS resonant converter efficiency |
Pinout & Package
Package: TO-247 (Toshiba 2-16L1A), isolated heatsink-compatible, 6.15 g typical weight.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal requiring ±25 V absolute max gate-emitter voltage; 185 nC total gate charge defines driver strength requirement |
| 2 | Collector (Heatsink) | Main high-side power terminal; electrically connected to case for direct thermal path to heatsink; not isolated |
| 3 | Emitter | Power return node; referenced to gate drive ground; carries full load current and diode reverse recovery current |
Key Features
| Feature | Design Value |
|---|---|
| Monolithic RC-IGBT structure | Integrated FWD eliminates layout parasitics and enables precise diode/IGBT timing matching for zero-voltage switching |
| 6.5th-generation trench-gate process | Reduces VCE(sat) by 12% vs. prior generation while maintaining <0.48 °C/W thermal resistance in TO-247 |
| Positive temperature coefficient of VCE(sat) | Enables stable current sharing in paralleled configurations without external emitter resistors |
| Guaranteed SOA up to 100 µs | Supports single-pulse surge events in induction cooktop burst-mode operation without secondary overcurrent protection |
| RoHS-compliant marking [[G]]/RoHS | Meets EU Directive 2011/65/EU; Pb-free plating confirmed per Toshiba environmental documentation |
Applications
| Induction Cooktop Inverter Stage | Resonant Microwave Oven Power Supply |
|---|---|
Use Scenario: High-frequency (20–50 kHz) voltage-resonant half-bridge driving series-resonant LC tank for pan detection and heating control. IC Role / Device Role / Timing Role: Main switching device in upper leg of resonant inverter; conducts during ZVS turn-on and commutates into integrated FWD during ZVS turn-off. Use Value: Low tf and Eoff minimize switching loss at 30 kHz; integrated FWD eliminates reverse recovery spikes that disrupt zero-voltage switching. |
Use Scenario: Soft-switched DC-DC converter supplying magnetron anode voltage in inverter-type microwave ovens. IC Role / Device Role / Timing Role: Primary-side switch in LLC resonant topology; handles 600 V bus with 40 A peak current during burst-mode cooking cycles. Use Value: 1350 V VCES provides 20% margin over 600 V bus with reflected transients; 175 °C Tj(max) sustains operation in thermally constrained oven cavities. |
| Home Appliance Motor Drive | Industrial Induction Heating Module |
Use Scenario: Three-phase inverter for variable-speed compressor drives in high-efficiency HVAC systems. IC Role / Device Role / Timing Role: Upper-leg IGBT in 3-phase bridge; switches at 8–16 kHz with sinusoidal PWM; FWD conducts motor phase current during dead-time. Use Value: VCE(sat) = 1.60 V reduces conduction loss by 1.2 W per device vs. comparable 1200 V IGBTs, lowering heatsink requirements. |
Use Scenario: Medium-power (5–10 kW) solid-state induction heater for metal hardening and brazing equipment. IC Role / Device Role / Timing Role: Half-bridge switch in series-resonant topology operating at 10–30 kHz with 100% duty cycle capability. Use Value: 0.48 °C/W Rth(j-c) allows direct mounting to water-cooled heatsinks; 80 A ICSM rating supports 2× overload for short-duration heating cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STGP30NC120HD | 1200 V VCES, 30 A IC, no integrated diode, TO-247 package | Requires external ultrafast diode; lower voltage rating limits use to ≤600 V bus topologies | Select when cost sensitivity outweighs integration benefit and system voltage remains ≤600 V |
| IXYS IXGN50N120B3 | 1200 V VCES, 50 A IC, 3rd-gen trench IGBT, no integrated diode | Lacks monolithic FWD; higher gate charge (220 nC) increases driver loss; larger die size | Prefer for higher-current, non-resonant hard-switching applications where diode independence is required |
Compared with STGP30NC120HD and IXGN50N120B3, GT20N135SRA offers superior soft-switching performance via integrated FWD and 1350 V rating, but requires careful gate drive design due to its 185 nC Qg and strict VGE derating below 1150 V operating voltage.
Availability
GT20N135SRA is available at Aetrix Electronics and suitable for induction cooktops, resonant microwave power supplies, and home appliance motor drives requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.
Supply support for GT20N135SRA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures high-reliability power semiconductors, with global leadership in IGBTs, MOSFETs, and optoelectronics for industrial and consumer applications.
The GT20N135SRA belongs to Toshiba's 6.5th-generation RC-IGBT product line, engineered specifically for high-efficiency, high-frequency resonant inverters in induction heating and home appliance systems.
FAQ
What is the maximum recommended operating voltage for GT20N135SRA in continuous use?
The GT20N135SRA datasheet specifies that for reliable long-term operation, the collector-emitter voltage must remain below 1150 V, even though its absolute maximum VCES rating is 1350 V. This derating ensures margin against voltage transients and thermal runaway in resonant inverter applications. The GT20N135SRA must be used with snubbers or clamping circuits if system bus voltages exceed 1150 V.
Does GT20N135SRA require a negative gate voltage for turn-off?
No, GT20N135SRA is an enhancement-mode device and turns off with 0 V gate-emitter bias; however, Toshiba recommends applying –5 V to –10 V during off-state to improve noise immunity and prevent accidental turn-on due to dv/dt coupling. The GT20N135SRA gate withstands only ±25 V, so negative bias must stay within this limit.
Can GT20N135SRA be paralleled with other IGBTs for higher current handling?
Yes, GT20N135SRA supports paralleling due to its positive temperature coefficient of VCE(sat), which promotes natural current balancing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling. The GT20N135SRA's 0.48 °C/W Rth(j-c) simplifies heatsink design for multi-device configurations.
What is the purpose of the integrated freewheeling diode in GT20N135SRA?
The monolithically integrated freewheeling diode in GT20N135SRA eliminates external diode placement, reduces layout parasitics, and ensures precise timing alignment between IGBT turn-off and diode conduction-critical for zero-voltage switching in resonant inverters. Unlike discrete diodes, the GT20N135SRA's integrated FWD shares thermal and electrical characteristics with the IGBT die, improving reliability under repetitive soft-switching stress.
Is GT20N135SRA suitable for automotive applications?
No, GT20N135SRA is not qualified for automotive use. Toshiba explicitly restricts its use to induction cooktops, home appliances, and industrial resonant inverters, and excludes automotive, aerospace, nuclear, and medical Class 3 systems. The GT20N135SRA lacks AEC-Q101 qualification, and its reliability data is validated only for consumer-grade thermal and lifetime profiles.
GT20N135SRA,S1E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- 1350 V
- Current - Collector (Ic) (Max):
- 40 A
- Current - Collector Pulsed (Icm):
- 80 A
- Vce(on) (Max) @ Vge, Ic:
- 2.4V @ 15V, 40A
- Power - Max:
- 312 W
- Switching Energy:
- -, 700µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 185 nC
- Td (on/off) @ 25°C:
- -
- Test Condition:
- 300V, 40A, 39Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247
GT20N135SRA,S1E FAQ
1.How can I place an order for GT20N135SRA,S1E through Aetrix?
Please submit a Request for Quotation (RFQ) for GT20N135SRA,S1E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for GT20N135SRA,S1E reliable?
The price and inventory of GT20N135SRA,S1E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for GT20N135SRA,S1E is usually 5 days.
3.What payment methods are accepted for GT20N135SRA,S1E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for GT20N135SRA,S1E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for GT20N135SRA,S1E?
GT20N135SRA,S1E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your GT20N135SRA,S1E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for GT20N135SRA,S1E?
For technical support, including GT20N135SRA,S1E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your GT20N135SRA,S1E requirements.
6.How does Aetrix verify that GT20N135SRA,S1E is sourced from the original manufacturer or authorized distributors?
All GT20N135SRA,S1E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that GT20N135SRA,S1E meets industry standards.
7.What is the process for return or replacement of GT20N135SRA,S1E?
All GT20N135SRA,S1E units undergo pre-shipment inspection (PSI). If there is an issue with GT20N135SRA,S1E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The GT20N135SRA,S1E part is unused and in its original packaging.
Return procedure for GT20N135SRA,S1E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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