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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Toshiba Semiconductor and Storage GT30J341,Q

Name: GT30J341,Q
Brand: Toshiba Semiconductor and Storage
SKU: GT30J341,Q
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: GT30J341,Q

Manufacturer:: Toshiba Semiconductor and Storage

Category:: Single IGBTs

Package:: TO-3P-3, SC-65-3

Datasheet:: GT30J341,Q.pdf

Description:: IGBT 600V 59A TO3P

Quantity:: RFQ Add To RFQ list

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Product details

Overview

GT30J341 from Toshiba is a silicon N-channel IGBT with integrated fast recovery diode, rated for 600 V collector-emitter voltage and 59 A DC collector current at Tc = 25°C, featuring 1.5 V typical saturation voltage at 30 A and operation up to 175°C junction temperature - deployed in industrial motor drive inverters.

For engineers reviewing the GT30J341 datasheet, GT30J341 pinout, GT30J341 application, or GT30J341 equivalent, this sixth-generation IGBT delivers verified thermal robustness, low conduction loss, and built-in FRD functionality critical for high-efficiency 3-phase AC motor control designs.

Technical Context

The GT30J341 integrates a monolithic fast recovery diode between emitter and collector, enabling self-contained half-bridge switching without external diode placement. Its sixth-generation IGBT structure achieves low V_CE(sat) (1.5 V typ. @ 30 A, 15 V_GE) while maintaining 5 µs short-circuit withstand time under V_CC = 300 V, V_GG = +15 V/0 V, R_G = 24 Ω, and T_j ≤ 150°C.

Thermal design is enabled by 0.65°C/W junction-to-case resistance (IGBT) and 1.05°C/W (diode), supporting high-power density layouts. Dynamic performance includes 0.2 µs turn-on time and 0.38 µs turn-off time under standard inductive load conditions, with 0.8 mJ turn-on and 0.6 mJ turn-off switching losses at 30 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - supports 400 V AC input rectified bus systems with 50% voltage margin
I_C (DC, Tc=25°C)	59 A - enables continuous 3 kW motor drive output at 200 V bus with appropriate heatsinking
V_CE(sat) (typ.)	1.5 V @ 30 A, 15 V_GE - reduces conduction loss to ~45 W per device at rated current
T_j(max)	175°C - allows operation in high-ambient industrial enclosures without derating below 150°C
t_sc	5 µs - provides sufficient time for overcurrent protection circuitry to respond before thermal runaway
R_th(j-c) (IGBT)	0.65°C/W - enables use with standard TO-3P(N)-compatible heatsinks for <100 W dissipation
C_ies	2900 pF @ V_CE=10 V - determines gate drive strength requirement (~2–3 A peak for 100 ns switching)

Pinout & Package

GT30J341 uses the TO-3P(N) package (Toshiba designation: 2-16C1S), with metal tab acting as collector and primary heat sink interface. Weight is 4.6 g (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	High-impedance MOS-controlled terminal requiring 15 V turn-on and −5 V to −10 V recommended turn-off bias
2	Collector (Heat sink)	Main high-side power terminal and thermal path; electrically connected to heatsink - requires isolation when mounted
3	Emitter	Low-side reference node for both IGBT and integrated FRD; common return for gate drive and current sensing

Key Features

Feature	Design Value
Sixth-generation trench-gate field-stop IGBT structure	Enables simultaneous optimization of V_CE(sat), switching speed, and short-circuit ruggedness
Integrated fast recovery diode (FRD)	Eliminates need for external anti-parallel diode in inverter legs, reducing component count and layout area
175°C maximum junction temperature	Supports operation in sealed industrial drives where ambient exceeds 85°C without forced air
0.65°C/W junction-to-case thermal resistance	Permits direct mounting to aluminum heatsinks with thermal interface material, avoiding complex thermal vias
5 µs short-circuit withstand time	Allows implementation of digital overcurrent protection with microsecond-level response latency

Applications

Industrial Motor Drives	UPS Inverters
Use Scenario: Three-phase 2.2–3.7 kW variable-frequency drives for pumps, fans, and conveyors operating in factory environments with 50–60°C ambient. IC Role / Device Role / Timing Role: Main switching device in inverter leg, handling 30 A RMS output current with 16 kHz PWM switching. Use Value: Low V_CE(sat) minimizes conduction loss at partial load, while integrated FRD ensures clean freewheeling during dead-time intervals.	Use Scenario: Online double-conversion UPS systems delivering clean 230 V AC output from battery-backed DC bus during grid failure. IC Role / Device Role / Timing Role: Output stage IGBT in full-bridge inverter, switching at 8–12 kHz to synthesize sine-wave output with LC filtering. Use Value: 175°C T_j(max) supports sustained overload operation (125% for 10 min) without thermal shutdown.
Solar Microinverters	Induction Heating Systems
Use Scenario: Single-phase 300–500 W microinverters converting PV panel DC to grid-synchronized AC, mounted on rooftop with passive cooling. IC Role / Device Role / Timing Role: Half-bridge switch in H-bridge topology, operating with unipolar modulation at 30–50 kHz. Use Value: 0.65°C/W R_th(j-c) enables reliable thermal performance using compact extruded heatsinks under full sunlight exposure.	Use Scenario: 5–10 kW resonant induction heating generators for metal hardening and brazing, operating at 20–50 kHz. IC Role / Device Role / Timing Role: Series-resonant inverter switch, conducting high di/dt currents with low switching loss during zero-voltage switching transitions. Use Value: Fast 50 ns reverse recovery time (t_rr) of integrated FRD prevents shoot-through and reduces EMI in high-frequency resonant tanks.

Industrial Motor Drives

UPS Inverters

Use Scenario: Three-phase 2.2–3.7 kW variable-frequency drives for pumps, fans, and conveyors operating in factory environments with 50–60°C ambient.

IC Role / Device Role / Timing Role: Main switching device in inverter leg, handling 30 A RMS output current with 16 kHz PWM switching.

Use Value: Low V_CE(sat) minimizes conduction loss at partial load, while integrated FRD ensures clean freewheeling during dead-time intervals.

Use Scenario: Online double-conversion UPS systems delivering clean 230 V AC output from battery-backed DC bus during grid failure.

IC Role / Device Role / Timing Role: Output stage IGBT in full-bridge inverter, switching at 8–12 kHz to synthesize sine-wave output with LC filtering.

Use Value: 175°C T_j(max) supports sustained overload operation (125% for 10 min) without thermal shutdown.

Solar Microinverters

Induction Heating Systems

Use Scenario: Single-phase 300–500 W microinverters converting PV panel DC to grid-synchronized AC, mounted on rooftop with passive cooling.

IC Role / Device Role / Timing Role: Half-bridge switch in H-bridge topology, operating with unipolar modulation at 30–50 kHz.

Use Value: 0.65°C/W R_th(j-c) enables reliable thermal performance using compact extruded heatsinks under full sunlight exposure.

Use Scenario: 5–10 kW resonant induction heating generators for metal hardening and brazing, operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Series-resonant inverter switch, conducting high di/dt currents with low switching loss during zero-voltage switching transitions.

Use Value: Fast 50 ns reverse recovery time (t_rr) of integrated FRD prevents shoot-through and reduces EMI in high-frequency resonant tanks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP30NC60WD	600 V / 30 A rated, TO-247 package, 1.8 V V_CE(sat) (typ.), no integrated diode	Requires external ultrafast diode; higher conduction loss but wider availability in distribution channels	Select when board layout already accommodates discrete diode placement and lower gate charge is prioritized
IXYS IXGN30N60B3	600 V / 30 A, TO-247, 1.7 V V_CE(sat) (typ.), integrated diode, 0.55°C/W R_th(j-c)	Superior thermal resistance and tighter V_CE(sat) tolerance, but higher cost and longer lead times	Prefer for new designs demanding highest thermal efficiency and long-term supply stability

Compared with STGP30NC60WD and IXGN30N60B3, the GT30J341 offers lower V_CE(sat) than the ST device and a proven TO-3P(N) mechanical form factor ideal for legacy industrial inverter platforms, though it trades slightly higher thermal resistance than the IXYS part.

Availability

GT30J341 is available at Aetrix Electronics and suitable for industrial motor drives, UPS inverters, solar microinverters, and induction heating systems requiring stable component supply across multi-year production cycles.

Supply support for GT30J341 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on industrial reliability and energy efficiency.

The GT30J341 belongs to Toshiba's sixth-generation IGBT product line, engineered specifically for high-efficiency, high-reliability motor control and power conversion in harsh industrial environments.

FAQ

What is the maximum allowable gate-emitter voltage for GT30J341?

The GT30J341 specifies ±25 V as its absolute maximum gate-emitter voltage (V_GES). Operation beyond this range risks permanent gate oxide damage. For reliable switching, Toshiba recommends +15 V for turn-on and −5 V to −10 V for turn-off bias to ensure fast, noise-immune transitions. The GT30J341 gate leakage current remains below ±100 nA within this rating.

Does GT30J341 include an integrated diode, and what are its key parameters?

Yes, the GT30J341 integrates a fast recovery diode (FRD) between emitter and collector. At T_c = 25°C and I_F = 30 A, its forward voltage (V_F) is 1.65 V (typ.), rising to 1.35 V (typ.) at 150°C. Reverse recovery time (t_rr) is 50 ns under I_F = 30 A and di/dt = −100 A/µs. This FRD eliminates external diode requirements in inverter half-bridges.

What is the short-circuit withstand capability of GT30J341, and under what test conditions is it specified?

The GT30J341 has a guaranteed 5 µs short-circuit withstand time (t_sc). This rating is measured under strictly defined conditions: V_CC = 300 V, V_GG = +15 V/0 V, gate resistor R_G = 24 Ω, and junction temperature T_j ≤ 150°C. Exceeding these conditions - especially higher bus voltage or elevated temperature - reduces t_sc nonlinearly and must be validated per application.

How does the thermal resistance of GT30J341 impact heatsink selection?

The GT30J341 exhibits 0.65°C/W junction-to-case thermal resistance (R_th(j-c)) for the IGBT section. To maintain T_j ≤ 150°C at 59 A DC conduction (230 W max dissipation), the total system thermal resistance (case-to-ambient) must be ≤ 0.37°C/W. This typically requires a finned aluminum heatsink ≥ 300 cm² surface area with forced airflow or ≥ 600 cm² with natural convection - directly informing mechanical design for GT30J341-based inverters.

Is GT30J341 RoHS compliant, and what marking indicates compliance?

Yes, GT30J341 is RoHS compliant. The device marking includes "[[G]]/RoHS COMPATIBLE" or "[[G]]/RoHS [[Pb]]" on the package surface, confirming compliance with Directive 2011/65/EU. Toshiba confirms lead-free termination finish and absence of restricted substances above threshold limits. Full compliance documentation is available through authorized Toshiba distributors and applies to all GT30J341 units manufactured after March 2012.

GT30J341,Q Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-3P-3, SC-65-3

Packaging:: Tray

Product Status:: Last Time Buy

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 59 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 30A

Power - Max:: 230 W

Switching Energy:: 800µJ (on), 600µJ (off)

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 80ns/280ns

Test Condition:: 300V, 30A, 24Ohm, 15V

Reverse Recovery Time (trr):: 50 ns

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-3P(N)

GT30J341,Q FAQ

1.How can I place an order for GT30J341,Q through Aetrix?

Please submit a Request for Quotation (RFQ) for GT30J341,Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for GT30J341,Q reliable?

The price and inventory of GT30J341,Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for GT30J341,Q is usually 5 days.

3.What payment methods are accepted for GT30J341,Q?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for GT30J341,Q transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for GT30J341,Q?

GT30J341,Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your GT30J341,Q order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for GT30J341,Q?

For technical support, including GT30J341,Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your GT30J341,Q requirements.

6.How does Aetrix verify that GT30J341,Q is sourced from the original manufacturer or authorized distributors?

All GT30J341,Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that GT30J341,Q meets industry standards.

7.What is the process for return or replacement of GT30J341,Q?

All GT30J341,Q units undergo pre-shipment inspection (PSI). If there is an issue with GT30J341,Q, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The GT30J341,Q part is unused and in its original packaging.

Return procedure for GT30J341,Q:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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