My Inquiry
My Account
Toshiba Semiconductor and Storage GT40QR21(STA1,E,D
- Part No.:
- GT40QR21(STA1,E,D
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single IGBTs
- Package:
- TO-3P-3, SC-65-3
- Datasheet:
-
GT40QR21(STA1,E,D.pdf
- Description:
- IGBT 1200V 40A TO3P
- Quantity:
- Payment:
- Shipping:
Inventory:82
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
GT40QR21 from Toshiba is a 1200 V, 40 A silicon N-channel RC-IGBT with monolithically integrated freewheeling diode, optimized for voltage-resonant inverter switching in industrial induction heating systems. It delivers VCE(sat) = 1.9 V (typ.) at IC = 40 A and Tj = 25 °C, supports 175 °C maximum junction temperature, and features 0.20 µs typical fall time.
For engineers reviewing the GT40QR21 datasheet, GT40QR21 pinout, GT40QR21 application, or GT40QR21 equivalent, key selection criteria include its 6.5th-generation RC-IGBT architecture, TO-3P(N) package thermal resistance of 0.65 °C/W, and dedicated suitability for resonant-mode inverters requiring low conduction loss and fast turn-off.
Technical Context
The GT40QR21 implements a 6.5th-generation trench-gate field-stop IGBT structure with co-integrated fast-recovery freewheeling diode on a single die. Its static characteristics include positive temperature coefficient for VCE(sat), enabling inherent current sharing in parallel configurations.
Dynamic behavior is defined by resistive-load switching times (tf = 0.20 µs typ.) and inductive-load turn-off energy (Eoff = 0.29 mJ typ. at Tc = 125 °C), with gate-emitter voltage rating of ±25 V and input capacitance Cies = 1500 pF at 10 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 1200 V - Withstands DC bus voltages up to 1200 V in resonant inverter topologies without breakdown. |
| IC (DC) | 40 A - Continuous collector current capability at Tc = 25 °C, defining steady-state power handling in induction heater output stages. |
| VCE(sat) | 1.9 V (typ.) at IC = 40 A - Low saturation voltage minimizes conduction loss and heatsink requirements in high-efficiency inverters. |
| tf | 0.20 µs (typ.) - Fast fall time enables high-frequency operation (>20 kHz) in zero-voltage-switching (ZVS) resonant circuits. |
| Tj(max) | 175 °C - High junction temperature rating allows compact thermal design and operation under sustained overload conditions. |
| Rth(j–c) | 0.65 °C/W - Low thermal resistance from junction to case enables effective heat transfer to heatsinks in TO-3P(N) mounting. |
| trr (FWD) | 0.60 µs (typ.) at IF = 15 A - Fast reverse recovery of integrated diode reduces switching loss and EMI in bidirectional current paths. |
Pinout & Package
GT40QR21 is housed in a TO-3P(N) package (Toshiba designation: 2-16C1S), featuring insulated metal tab for direct heatsink mounting and 4.6 g typical mass. The package provides robust thermal performance and high-voltage isolation suitable for industrial power modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal requiring ±25 V gate drive; low input capacitance (1500 pF) eases driver design and reduces gate loss. |
| 2 | Collector | Main high-side power terminal connected to DC bus; rated for 1200 V blocking and 80 A peak current. |
| 3 | Emitter | Power return path and reference for gate drive; shared emitter node for IGBT and integrated FWD enables compact layout. |
Key Features
| Feature | Design Value |
|---|---|
| Monolithic RC-IGBT | Single-die integration of IGBT and fast-recovery diode eliminates discrete diode placement, reducing parasitic inductance and layout complexity. |
| Enhancement-mode operation | Normally-off behavior ensures safe default state during gate drive failure or startup, critical for industrial safety compliance. |
| High-speed switching | 0.20 µs tf and 0.40 µs toff support ZVS operation at 20–50 kHz, enabling smaller passive components in resonant tank designs. |
| Low VCE(sat) temperature stability | VCE(sat) increases only to 2.50 V at IC = 40 A and Tj = 175 °C, maintaining predictable conduction loss across full operating range. |
| 175 °C junction rating | Enables derated operation at elevated ambient temperatures (e.g., enclosed control cabinets) without forced air cooling. |
Applications
| Induction Heating Inverters | Resonant DC-AC Converters |
|---|---|
Use Scenario: Medium-frequency (20–100 kHz) series-resonant inverters for industrial metal heating, melting, and hardening. IC Role / Device Role / Timing Role: Main switching device in half-bridge configuration, conducting high-current AC through resonant tank. Use Value: Low VCE(sat) and fast tf reduce total switching + conduction loss, improving system efficiency from 88% to 92%. | Use Scenario: Zero-voltage-switching (ZVS) DC-AC conversion in UPS and solar microinverters with soft-switching requirements. IC Role / Device Role / Timing Role: Resonant switch enabling sinusoidal current waveforms and reduced EMI generation. Use Value: Integrated FWD with 0.60 µs trr prevents reverse recovery spikes, eliminating need for external snubbers. |
| Plasma Generator Drivers | RF Power Amplifier Stages |
Use Scenario: High-voltage, high-frequency pulsed power supplies for plasma ignition and sustained discharge in semiconductor processing tools. IC Role / Device Role / Timing Role: Voltage-resonant switch controlling energy delivery into capacitive plasma load. Use Value: 1200 V VCES withstands transient overvoltages during plasma arc formation and extinction. | Use Scenario: Final-stage power amplification in 1–30 MHz RF generators for medical diathermy and material processing. IC Role / Device Role / Timing Role: Class-D or Class-E switching element operating in resonant mode at fixed frequency. Use Value: 0.65 °C/W Rth(j–c) sustains 230 W dissipation at Tc = 100 °C, supporting continuous RF duty cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN40N120B3 | 1200 V/40 A, TO-247 package, separate diode, tf = 0.18 µs, Rth(j–c) = 0.55 °C/W | Requires external FWD; lower thermal resistance but higher layout complexity and stray inductance. | Select when maximum thermal performance is prioritized and discrete diode integration is acceptable. |
| Infineon IKW40N120H3 | 1200 V/40 A, TO-247-3L, co-packaged diode, tf = 0.22 µs, VCE(sat) = 2.1 V (typ.) | Higher VCE(sat) increases conduction loss; same resonant inverter use case but lower efficiency at full load. | Select when supply chain availability favors Infineon and 0.2 V higher saturation voltage is tolerable. |
Compared with IXGN40N120B3 and IKW40N120H3, the GT40QR21 uniquely integrates the freewheeling diode in the same die, reducing layout parasitics and simplifying PCB routing for resonant inverters-while maintaining competitive VCE(sat) and thermal resistance within its TO-3P(N) form factor.
Availability
GT40QR21 is available at Aetrix Electronics and suitable for industrial induction heating, resonant DC-AC conversion, and plasma generator applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for GT40QR21 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures high-reliability power semiconductors for industrial, automotive, and consumer applications, with global manufacturing and quality certification to ISO 9001 and IATF 16949.
The GT40QR21 belongs to Toshiba's 6.5th-generation RC-IGBT product line, engineered specifically for voltage-resonant inverter topologies where integrated diode performance, low conduction loss, and robust thermal behavior are essential.
FAQ
What is the maximum junction temperature rating for the GT40QR21?
The GT40QR21 has a maximum junction temperature rating of 175 °C, verified per Toshiba's Absolute Maximum Ratings table. This allows operation at elevated ambient temperatures and supports thermal derating strategies in enclosed industrial enclosures. The GT40QR21 must not exceed this limit under any condition, including transient overloads, as confirmed in the datasheet's Note 1 and Thermal Characteristics section.
Does the GT40QR21 include an integrated freewheeling diode?
Yes, the GT40QR21 is an RC-IGBT with a monolithically integrated fast-recovery freewheeling diode on the same silicon die. This is explicitly stated in the Features section as "(2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip." The diode exhibits trr = 0.60 µs (typ.) at IF = 15 A, confirming co-integration and functional validation in the Electrical Characteristics table.
What package type does the GT40QR21 use, and what are its mechanical identifiers?
The GT40QR21 uses the TO-3P(N) package, also designated by Toshiba as 2-16C1S. Its mechanical specifications include a 4.6 g typical mass, insulated metal tab for heatsink mounting, and three terminals: Gate (Pin 1), Collector (Pin 2), Emitter (Pin 3). Package dimensions and marking details are documented in the "Package Dimensions" and "Marking" sections of the official datasheet Rev. 2.0.A.
What is the typical collector-emitter saturation voltage of the GT40QR21 at rated current?
The typical collector-emitter saturation voltage of the GT40QR21 is 1.9 V at IC = 40 A, VGE = 15 V, and Tj = 25 °C, as specified in the Electrical Characteristics table under VCE(sat)(4). At elevated junction temperature (Tj = 175 °C), VCE(sat) rises to 2.50 V (typ.), reflecting the device's positive temperature coefficient and enabling inherent current balancing in parallel configurations.
Is the GT40QR21 suitable for hard-switching applications?
No-the GT40QR21 is explicitly designated for voltage-resonant inverter switching applications, as stated in the Applications section. Its optimized dynamic parameters (e.g., tf = 0.20 µs, Eoff = 0.29 mJ) and thermal design assume ZVS operation. Hard-switching would exceed safe operating area limits and accelerate degradation, per Toshiba's RESTRICTIONS ON PRODUCT USE clause specifying "The product(s) described herein should not be used for any other application."
GT40QR21(STA1,E,D Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-3P-3, SC-65-3
- Packaging:
- Tube
- Product Status:
- Active
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- 1200 V
- Current - Collector (Ic) (Max):
- 40 A
- Current - Collector Pulsed (Icm):
- 80 A
- Vce(on) (Max) @ Vge, Ic:
- 2.7V @ 15V, 40A
- Power - Max:
- 230 W
- Switching Energy:
- -, 290µJ (off)
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- -
- Test Condition:
- 280V, 40A, 10Ohm, 20V
- Reverse Recovery Time (trr):
- 600 ns
- Operating Temperature:
- 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-3P(N)
GT40QR21(STA1,E,D FAQ
1.How can I place an order for GT40QR21(STA1,E,D through Aetrix?
Please submit a Request for Quotation (RFQ) for GT40QR21(STA1,E,D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for GT40QR21(STA1,E,D reliable?
The price and inventory of GT40QR21(STA1,E,D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for GT40QR21(STA1,E,D is usually 5 days.
3.What payment methods are accepted for GT40QR21(STA1,E,D?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for GT40QR21(STA1,E,D transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for GT40QR21(STA1,E,D?
GT40QR21(STA1,E,D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your GT40QR21(STA1,E,D order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for GT40QR21(STA1,E,D?
For technical support, including GT40QR21(STA1,E,D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your GT40QR21(STA1,E,D requirements.
6.How does Aetrix verify that GT40QR21(STA1,E,D is sourced from the original manufacturer or authorized distributors?
All GT40QR21(STA1,E,D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that GT40QR21(STA1,E,D meets industry standards.
7.What is the process for return or replacement of GT40QR21(STA1,E,D?
All GT40QR21(STA1,E,D units undergo pre-shipment inspection (PSI). If there is an issue with GT40QR21(STA1,E,D, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The GT40QR21(STA1,E,D part is unused and in its original packaging.
Return procedure for GT40QR21(STA1,E,D:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
GT40QR21(STA1,E,D Tags
;;2.jpg)
-
STGD3NB60SDT4
STMicroelectronics
-
HGTD1N120BNS9A
onsemi
-
STGF7NB60SL
STMicroelectronics
-
FGD5T120SH
onsemi
-
STGB3NC120HDT4
STMicroelectronics
-
IKP20N60TXKSA1
Infineon Technologies
-
STGW30H60DFB
STMicroelectronics
-
STGB30M65DF2
STMicroelectronics
-
IKB20N60TATMA1
Infineon Technologies
-
STGB30V60DF
STMicroelectronics
-
IKW30N60DTPXKSA1
Infineon Technologies
-
ISL9V3040P3
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
