Toshiba Semiconductor and Storage GT40RR21(STA1,E

Overview

GT40RR21 from Toshiba is a 6.5th-generation silicon N-channel RC-IGBT with monolithically integrated freewheeling diode, rated for 1350 V V_CES, 40 A I_C(DC), and 175 °C maximum junction temperature. It delivers low saturation voltage (V_CE(sat) = 2.05 V typ. at 40 A) and fast switching (t_f = 0.21 µs typ.) for voltage-resonant inverter applications.

For engineers reviewing the GT40RR21 datasheet, GT40RR21 pinout, GT40RR21 application, or GT40RR21 equivalent, key selection criteria include its TO-3P(N) package thermal resistance (R_th(j-c) = 0.65 °C/W), integrated FWD reverse recovery time (t_rr = 0.60 µs typ.), and high-speed switching loss performance under inductive load conditions.

Technical Context

The GT40RR21 implements an RC-IGBT architecture where the freewheeling diode is fabricated on the same die as the IGBT, enabling tight thermal coupling and optimized commutation behavior in resonant topologies. Its enhancement-mode gate drive requires ±15 V for full conduction and features low gate leakage (±100 nA max).

Designed for hard-switched and soft-switched voltage-resonant inverters, the device operates with V_GE(OFF) = 4.5–7.5 V threshold and exhibits positive temperature coefficient for V_CE(sat), supporting parallel operation with current sharing stability up to T_j = 175 °C.

Key Specifications

Pinout & Package

GT40RR21 is housed in a TO-3P(N) package (Toshiba designation: 2-16C1S), featuring isolated metal tab for direct heatsink mounting and 4.6 g typical weight. The package provides low thermal resistance and mechanical robustness for high-reliability power conversion modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with IXGN40N120B3 and IKW40N120H3, the GT40RR21 uniquely combines 1350 V blocking, monolithic RC integration, and 175 °C junction rating-making it the only option among the three qualified for high-reliability voltage-resonant inverters operating continuously above 150 °C case temperature.

Availability

GT40RR21 is available at Aetrix Electronics and suitable for industrial motor drives, induction heating systems, and high-voltage DC power supplies requiring stable component supply across multi-year production cycles.

Supply support for GT40RR21 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions with global manufacturing and quality certification.

The GT40RR21 belongs to Toshiba's 6.5th-generation RC-IGBT product line, engineered specifically for high-efficiency, high-reliability voltage-resonant inverter applications demanding integrated diode performance and extended thermal operation.

FAQ

What is the maximum allowable junction temperature for the GT40RR21?

The GT40RR21 has a maximum junction temperature (T_j) rating of 175 °C, as specified in its Absolute Maximum Ratings table. This value is strictly enforced-note 1 states that junction temperature must not exceed 175 °C under any operating condition. Exceeding this limit risks thermal runaway due to the positive temperature coefficient of V_CE(sat). Thermal design must ensure R_th(j-c) = 0.65 °C/W and adequate heatsinking to maintain safe operation of the GT40RR21.

Does the GT40RR21 include an integrated freewheeling diode?

Yes, the GT40RR21 is an RC-IGBT (Reverse Conducting IGBT) with a freewheeling diode monolithically integrated on the same silicon die. This is explicitly stated in the Features section and confirmed by electrical characteristics including diode forward voltage (V_F = 1.75 V typ. at 15 A) and reverse recovery time (t_rr = 0.60 µs typ.). The integration eliminates external diode placement errors and improves thermal coupling, making the GT40RR21 distinct from standard IGBTs.

What is the gate-emitter threshold voltage range for the GT40RR21?

The GT40RR21 has a gate-emitter threshold voltage (V_GE(OFF)) range of 4.5 V (min) to 7.5 V (max), measured at I_C = 40 mA and V_CE = 5 V. This defines the minimum gate voltage required to initiate conduction. The device operates in enhancement mode and requires ≥15 V V_GE for full saturation, as confirmed by V_CE(sat) test conditions. Proper gate drive design must account for this threshold to avoid linear-mode operation and excessive power dissipation in the GT40RR21.

What package type does the GT40RR21 use, and what are its mechanical identifiers?

The GT40RR21 uses the TO-3P(N) package, also designated by Toshiba as 2-16C1S. It features three terminals (Gate, Collector, Emitter) arranged in a single-row configuration with an isolated metal tab for heatsink mounting. Package dimensions and weight (4.6 g typ.) are documented in the datasheet revision 2.0.A. The TO-3P(N) provides superior thermal performance (R_th(j-c) = 0.65 °C/W) compared to TO-247, making it suitable for high-power density designs using the GT40RR21.

Can the GT40RR21 be used in hard-switched applications, or is it limited to resonant topologies?

The GT40RR21 is explicitly dedicated to voltage-resonant inverter switching applications per the official Applications note, and its design optimizations-including low t_f, monolithic FWD, and 1350 V V_CES-are targeted for ZVS/ZCS operation. While it can function in hard-switched circuits, Toshiba cautions against non-resonant use. The device's Safe Operating Area (SOA) and switching loss curves are characterized for inductive resonant loads, and operation outside this scope may compromise reliability or violate the "RESTRICTIONS ON PRODUCT USE" clause in the datasheet for the GT40RR21.