My Inquiry
My Account
Toshiba Semiconductor and Storage GT50J341,Q
- Part No.:
- GT50J341,Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single IGBTs
- Package:
- TO-3P-3, SC-65-3
- Datasheet:
-
GT50J341,Q.pdf
- Description:
- PB-F IGBT / TRANSISTOR TO-3PN IC
- Quantity:
- Payment:
- Shipping:
Inventory:9,345
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
GT50J341,Q from Toshiba is a silicon N-channel IGBT with integrated fast recovery diode, designed for current-resonant inverter switching applications. It delivers VCE(sat) = 1.6 V (typ.) at IC = 50 A, tf = 0.15 µs (typ.), and VCES = 600 V - enabling high-efficiency, high-frequency operation in resonant topologies such as induction heating and UPS inverters.
For engineers reviewing the GT50J341,Q datasheet, GT50J341,Q pinout, GT50J341,Q application, or GT50J341,Q equivalent, key selection criteria include its sixth-generation IGBT architecture, TO-3P(N) thermal performance (Rth(j-c) = 0.75 °C/W), integrated FRD, and strict suitability for resonant inverter use only - not general-purpose switching.
Technical Context
The GT50J341,Q employs Toshiba's sixth-generation trench-gate field-stop IGBT structure with enhancement-mode operation and monolithically integrated fast recovery diode. Its static and dynamic characteristics are optimized for zero-voltage switching (ZVS) and zero-current switching (ZCS) conditions typical of current-resonant inverters.
It features positive temperature coefficient for VCE(sat), enabling inherent current sharing in parallel configurations, and exhibits guaranteed safe operating area (SOA) up to 100 W (Tc = 25 °C) and reverse bias SOA compliance - critical for resonant circuit stress management.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 600 V - supports DC bus voltages up to 400 V nominal in resonant inverter designs with margin. |
| IC (DC) | 50 A - rated continuous collector current at Tc = 100 °C, defining thermal design baseline. |
| VCE(sat) | 1.6 V (typ.) at IC = 50 A, VGE = 15 V - low conduction loss enabling >97% inverter efficiency at rated load. |
| tf | 0.15 µs (typ.) - fast fall time minimizes switching loss during high-frequency resonant transitions. |
| Rth(j-c) (IGBT) | 0.75 °C/W - enables direct heatsink mounting with predictable junction temperature rise under 100 W dissipation. |
| Cies | 2700 pF (typ.) at VCE = 10 V - input capacitance value used for gate drive strength calculation and EMI filtering. |
| trr (diode) | 0.1 µs (typ.) - short reverse recovery time of integrated FRD reduces turn-on loss and voltage overshoot in hard-switched freewheeling paths. |
Pinout & Package
GT50J341,Q is housed in a TO-3P(N) package (Toshiba designation: 2-16C1S), featuring insulated metal tab for direct heatsink mounting, 4.6 g mass, and mechanical robustness for industrial power modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: Gate | Control terminal | Receives ±25 V gate-emitter voltage; requires gate resistor (e.g., 39 Ω) to control dV/dt and switching speed. |
| 2: Collector | High-side power output | Connected to DC bus or resonant tank node; carries full load current and withstands 600 V blocking. |
| 3: Emitter | Power return / reference | Serves as common emitter for IGBT and cathode connection point for integrated FRD; must be low-inductance path. |
Key Features
| Feature | Design Value |
|---|---|
| Sixth-generation trench-gate field-stop IGBT | Enables lower VCE(sat) and faster switching than prior generations while maintaining rugged SOA. |
| Integrated fast recovery diode (FRD) | Eliminates need for external anti-parallel diode in half-bridge inverter legs, reducing component count and layout complexity. |
| Enhancement-mode operation | Ensures normally-off behavior - critical for system safety and simplifies gate drive design without pull-down resistors. |
| Positive VCE(sat) temperature coefficient | Supports stable parallel operation without current-sharing resistors due to self-balancing thermal behavior. |
| Guaranteed reverse bias SOA | Validated capability to withstand simultaneous high voltage and current during turn-off transients in resonant circuits. |
Applications
| Induction Heating Inverters | UPS Half-Bridge Stages |
|---|---|
|
Use Scenario: High-frequency (20–100 kHz) series-resonant inverters driving induction coils for domestic and industrial cooktops. IC Role / Device Role / Timing Role: Main switching device in ZVS half-bridge topology, handling 50 A peak resonant current at 600 V bus. Use Value: Low VCE(sat) and fast tf reduce conduction and switching losses, directly improving thermal efficiency and enabling compact heatsink design. |
Use Scenario: Online double-conversion UPS systems requiring reliable 50 A/600 V switching in battery-backed inverter stage. IC Role / Device Role / Timing Role: Upper/lower switch in half-bridge configuration, operating in current-resonant mode to minimize EMI and stress. Use Value: Integrated FRD ensures clean freewheeling during dead-time intervals, preventing shoot-through and voltage spikes. |
| Resonant DC-AC Converters | Industrial Motor Drive Resonant Stages |
|
Use Scenario: Medium-power (3–5 kW) resonant DC-AC converters for solar micro-inverters and energy storage interfaces. IC Role / Device Role / Timing Role: Primary power switch in LLC or LCC resonant converter primary side, operating at fixed frequency near resonance. Use Value: Guaranteed SOA and Rth(j-c) = 0.75 °C/W allow sustained operation at 100 W dissipation without derating in sealed enclosures. |
Use Scenario: Soft-switched auxiliary inverters in multi-level motor drives for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Resonant snubber switch or auxiliary bridge leg managing reactive power flow during commutation. Use Value: Fast tr = 0.18 µs and ton = 0.27 µs enable precise timing control in multi-phase resonant sequences, minimizing dead-time uncertainty. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STGW40H65DFB | 650 V VCES, 40 A IC, tf = 0.12 µs, no integrated diode - requires external FRD. | Designed for hard-switched PFC and motor drives; lacks resonant-specific SOA validation. | Choose when higher voltage margin is needed and external diode integration is acceptable. |
| IXYS IXGN50N60B3 | 600 V VCES, 50 A IC, tf = 0.14 µs, includes ultrafast diode but higher VF = 2.4 V. | Optimized for general-purpose inverters; not restricted to resonant use per datasheet. | Prefer when broader application flexibility is required beyond dedicated current-resonant topologies. |
Compared with STGW40H65DFB and IXGN50N60B3, the GT50J341,Q offers uniquely validated performance for current-resonant inverters - including guaranteed reverse bias SOA, lower VCE(sat), and manufacturer-specified restriction to that use case - making it optimal where resonant stress profiles dominate design requirements.
Availability
GT50J341,Q is available at Aetrix Electronics and suitable for induction heating inverters, UPS half-bridge stages, and resonant DC-AC converters requiring stable component supply, long-lifecycle support, and traceable industrial-grade sourcing.
Supply support for GT50J341,Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions with over 50 years of power electronics heritage.
The GT50J341,Q belongs to Toshiba's sixth-generation discrete IGBT product line, engineered specifically for high-efficiency current-resonant inverter applications - emphasizing low-loss switching, integrated diode functionality, and rugged thermal performance.
FAQ
What is the maximum junction temperature rating for the GT50J341,Q?
The GT50J341,Q has a maximum junction temperature (Tj) rating of 175 °C, with Note 1 in the datasheet explicitly requiring that the junction temperature must not exceed this limit during operation. This rating governs thermal design margins and heatsink sizing - especially critical given its Rth(j-c) = 0.75 °C/W specification. The GT50J341,Q must be operated within this thermal boundary to ensure reliability and avoid thermorunaway.
Does the GT50J341,Q include an integrated diode, and what are its key parameters?
Yes, the GT50J341,Q integrates a fast recovery diode (FRD) between emitter and collector. Key confirmed parameters include forward voltage VF = 1.5 V (typ.) at IF = 15 A, reverse recovery time trr = 0.1 µs (typ.), and diode forward current rating IF = 28 A (DC). This monolithic integration eliminates the need for an external anti-parallel diode in half-bridge configurations, reducing board space and parasitic inductance in the GT50J341,Q-based inverter design.
Is the GT50J341,Q suitable for hard-switched PWM motor drives?
No - the GT50J341,Q is explicitly restricted to current-resonant inverter switching applications per its official datasheet. Toshiba states "The product(s) described herein should not be used for any other application." Its SOA, switching characteristics, and thermal validation are optimized for ZVS/ZCS conditions, not hard-switched PWM waveforms. Using the GT50J341,Q outside this scope violates manufacturer guidance and risks premature failure due to unvalidated voltage/current stress profiles.
What gate drive voltage range is specified for the GT50J341,Q?
The GT50J341,Q specifies a gate-emitter voltage range of ±25 V, with recommended operating conditions of VGE = +15 V (turn-on) and –15 V (turn-off). Absolute maximum ratings confirm ±25 V, and electrical characteristics show VGE(OFF) = 4.5–7.5 V (max), confirming enhancement-mode behavior. Driving the GT50J341,Q outside this range risks gate oxide damage or unreliable switching - particularly critical given its electrostatic-sensitive construction noted in the datasheet.
What is the thermal resistance from junction to case for the GT50J341,Q IGBT and diode sections?
The GT50J341,Q has two distinct thermal resistance values: Rth(j-c) = 0.75 °C/W for the IGBT section and Rth(j-c) = 1.8 °C/W for the integrated diode section. These values are measured under specified test conditions and define separate thermal paths - meaning heatsink design must account for both dissipation sources independently. The lower IGBT value reflects its dominant role in power handling, while the higher diode value indicates greater thermal impedance for freewheeling losses in the GT50J341,Q.
GT50J341,Q Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-3P-3, SC-65-3
- Packaging:
- Tray
- Product Status:
- Active
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 50 A
- Current - Collector Pulsed (Icm):
- 100 A
- Vce(on) (Max) @ Vge, Ic:
- 2.2V @ 15V, 50A
- Power - Max:
- 200 W
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- -
- Test Condition:
- -
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-3P(N)
GT50J341,Q FAQ
1.How can I place an order for GT50J341,Q through Aetrix?
Please submit a Request for Quotation (RFQ) for GT50J341,Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for GT50J341,Q reliable?
The price and inventory of GT50J341,Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for GT50J341,Q is usually 5 days.
3.What payment methods are accepted for GT50J341,Q?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for GT50J341,Q transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for GT50J341,Q?
GT50J341,Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your GT50J341,Q order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for GT50J341,Q?
For technical support, including GT50J341,Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your GT50J341,Q requirements.
6.How does Aetrix verify that GT50J341,Q is sourced from the original manufacturer or authorized distributors?
All GT50J341,Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that GT50J341,Q meets industry standards.
7.What is the process for return or replacement of GT50J341,Q?
All GT50J341,Q units undergo pre-shipment inspection (PSI). If there is an issue with GT50J341,Q, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The GT50J341,Q part is unused and in its original packaging.
Return procedure for GT50J341,Q:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
GT50J341,Q Tags
;;2.jpg)
-
STGD3NB60SDT4
STMicroelectronics
-
HGTD1N120BNS9A
onsemi
-
STGF7NB60SL
STMicroelectronics
-
FGD5T120SH
onsemi
-
STGB3NC120HDT4
STMicroelectronics
-
IKP20N60TXKSA1
Infineon Technologies
-
STGW30H60DFB
STMicroelectronics
-
STGB30M65DF2
STMicroelectronics
-
IKB20N60TATMA1
Infineon Technologies
-
STGB30V60DF
STMicroelectronics
-
IKW30N60DTPXKSA1
Infineon Technologies
-
ISL9V3040P3
onsemi
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
