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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Toshiba Semiconductor and Storage GT50JR21(STA1,E,S)

Name: GT50JR21(STA1,E,S)
Brand: Toshiba Semiconductor and Storage
SKU: GT50JR21(STA1,E,S)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: GT50JR21(STA1,E,S)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: Single IGBTs

Package:: TO-3P-3, SC-65-3

Datasheet:: GT50JR21(STA1,E,S).pdf

Description:: PB-F IGBT / TRANSISTOR TO-3PN(OS

Quantity:: RFQ Add To RFQ list

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Product details

Overview

GT50JR21(STA1,E,S) from Toshiba is a 600 V, 50 A silicon N-channel RC-IGBT with monolithically integrated freewheeling diode, optimized for current-resonant inverter switching. It delivers V_CE(sat) = 1.45 V (typ.) at 50 A, t_f = 0.08 µs (IGBT), t_rr = 0.35 µs (FWD), and operates up to T_j = 175 °C - enabling high-efficiency, compact resonant converters in induction heating systems.

For engineers reviewing the GT50JR21(STA1,E,S) datasheet, GT50JR21(STA1,E,S) pinout, GT50JR21(STA1,E,S) application, or GT50JR21(STA1,E,S) equivalent, key selection criteria include its 6.5th-generation RC-IGBT architecture, TO-3P(N) package thermal resistance (R_th(j-c) = 0.65 °C/W), and dedicated suitability for zero-voltage-switching (ZVS) resonant topologies requiring low conduction loss and fast, soft recovery.

Technical Context

This device implements a 6.5th-generation trench-gate field-stop IGBT structure with co-integrated fast soft-recovery FWD on a single die - eliminating external diode placement and reducing parasitic inductance in high-frequency resonant inverters. Its positive temperature coefficient for V_CE(sat) enables inherent current sharing in parallel configurations.

The RC-IGBT architecture integrates gate-controlled IGBT and anti-parallel diode functions within one chip, supporting precise timing alignment between turn-off and reverse recovery. Dynamic performance is characterized under standardized conditions: V_CC = 300 V, I_C = 50 A, V_GG = ±15 V, R_G = 39 Ω, ensuring reproducible switching behavior in ZVS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - supports DC bus voltages up to 400–450 V in resonant inverters with margin for voltage spikes.
I_C (DC)	50 A - rated continuous collector current at T_c = 25 °C, defining thermal design baseline for heatsink sizing.
V_CE(sat)	1.45 V (typ.) at I_C = 50 A - directly determines conduction loss (P_cond ≈ 72.5 W), critical for efficiency in high-duty-cycle operation.
t_f / t_rr	0.08 µs (IGBT fall time), 0.35 µs (FWD reverse recovery time) - enables <100 kHz ZVS operation with minimal switching loss and EMI.
R_th(j-c)	0.65 °C/W - defines junction-to-case thermal gradient; with 175 °C max T_j, allows ~175 W dissipation at T_c = 25 °C.
T_j (max)	175 °C - extends safe operating area under transient overload, supporting short-term peak currents up to 100 A (1 ms).
C_ies	2700 pF - input capacitance at V_CE = 10 V, informs gate driver strength requirements (Q_g ≈ 125 nC typical).

Pinout & Package

GT50JR21(STA1,E,S) uses the TO-3P(N) package (Toshiba designation: 2-16C1S), a through-hole insulated case with 4.6 g mass and creepage/clearance optimized for industrial mains isolation. Mounting torque: 0.8 N·m.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal for IGBT turn-on/turn-off; requires ±25 V absolute max rating and low-impedance gate drive to manage Q_g = 125 nC.
2	Collector	Main high-side power terminal; connects to DC bus or resonant tank node; electrically isolated case enhances safety in high-voltage inverters.
3	Emitter	Power return path for IGBT and integrated FWD; shared emitter node simplifies gate loop layout and reduces common-mode noise.

Key Features

Feature	Design Value
Monolithic RC-IGBT	Single-die integration of IGBT + soft-recovery FWD eliminates interconnect inductance, enabling tighter timing control in ZVS circuits.
6.5th-generation trench gate	Reduces V_CE(sat) and switching losses simultaneously versus prior generations, improving efficiency at 20–80 kHz resonant frequencies.
Enhancement-mode operation	Normally-off behavior ensures fail-safe shutdown during gate drive failure - mandatory for industrial safety compliance.
175 °C maximum junction temperature	Enables higher power density by allowing smaller heatsinks or higher ambient operation in enclosed induction heating enclosures.

Applications

Induction Heating Inverters	Resonant DC-AC Converters
Use Scenario: High-frequency (20–100 kHz) series-resonant inverters driving copper coils for cooktops and industrial metal heating. IC Role / Device Role / Timing Role: Primary switching element in half-bridge topology; synchronized with FWD recovery to achieve zero-voltage switching. Use Value: Low V_CE(sat) and fast t_f/t_rr reduce total losses by >15% vs. discrete IGBT+FWD solutions, increasing system efficiency to >93%.	Use Scenario: Medium-power (3–5 kW) resonant converters for UPS and solar microinverters requiring soft-switching and high reliability. IC Role / Device Role / Timing Role: Resonant switch with integrated FWD providing natural commutation path during dead-time intervals. Use Value: Monolithic integration eliminates layout-dependent ringing and improves EMI performance, reducing filter component count by 30%.
High-Frequency Welding Supplies	RF Plasma Generators
Use Scenario: Solid-state welding inverters operating at 50–200 kHz with tight current regulation and rapid load transients. IC Role / Device Role / Timing Role: Main power switch handling pulsed 100 A peak currents; FWD conducts reverse current during arc re-ignition phases. Use Value: 100 A (1 ms) peak rating and 175 °C T_j support repetitive surge handling without derating, extending mean time between failures.	Use Scenario: RF matching networks in plasma etching and deposition tools requiring stable, low-noise switching at 1–2 MHz fundamental frequencies. IC Role / Device Role / Timing Role: Resonant tank switch with precisely matched IGBT/FWD timing to minimize harmonic distortion in RF output. Use Value: Soft reverse recovery (t_rr = 0.35 µs, low Q_rr) suppresses voltage overshoot, protecting downstream RF amplifiers and sensors.

Induction Heating Inverters

Resonant DC-AC Converters

Use Scenario: High-frequency (20–100 kHz) series-resonant inverters driving copper coils for cooktops and industrial metal heating.

IC Role / Device Role / Timing Role: Primary switching element in half-bridge topology; synchronized with FWD recovery to achieve zero-voltage switching.

Use Value: Low V_CE(sat) and fast t_f/t_rr reduce total losses by >15% vs. discrete IGBT+FWD solutions, increasing system efficiency to >93%.

Use Scenario: Medium-power (3–5 kW) resonant converters for UPS and solar microinverters requiring soft-switching and high reliability.

IC Role / Device Role / Timing Role: Resonant switch with integrated FWD providing natural commutation path during dead-time intervals.

Use Value: Monolithic integration eliminates layout-dependent ringing and improves EMI performance, reducing filter component count by 30%.

High-Frequency Welding Supplies

RF Plasma Generators

Use Scenario: Solid-state welding inverters operating at 50–200 kHz with tight current regulation and rapid load transients.

IC Role / Device Role / Timing Role: Main power switch handling pulsed 100 A peak currents; FWD conducts reverse current during arc re-ignition phases.

Use Value: 100 A (1 ms) peak rating and 175 °C T_j support repetitive surge handling without derating, extending mean time between failures.

Use Scenario: RF matching networks in plasma etching and deposition tools requiring stable, low-noise switching at 1–2 MHz fundamental frequencies.

IC Role / Device Role / Timing Role: Resonant tank switch with precisely matched IGBT/FWD timing to minimize harmonic distortion in RF output.

Use Value: Soft reverse recovery (t_rr = 0.35 µs, low Q_rr) suppresses voltage overshoot, protecting downstream RF amplifiers and sensors.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RC-IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN50N60B4	600 V, 50 A, 4th-gen planar IGBT + separate ultrafast diode; R_th(j-c) = 0.75 °C/W; t_f = 0.12 µs; no monolithic integration.	Requires careful PCB layout to minimize stray inductance between IGBT and diode; less suitable for >50 kHz ZVS due to slower switching and higher EMI.	Preferred where legacy driver compatibility or lower gate charge (Q_g = 95 nC) is prioritized over integration benefits.
Infineon IKW50N60H3	600 V, 50 A, 3rd-gen TRENCHSTOP™ IGBT + co-packaged diode; R_th(j-c) = 0.60 °C/W; t_f = 0.09 µs; diode t_rr = 0.25 µs but not monolithic.	Co-packaged (not monolithic) construction introduces ~5 nH inter-device inductance, limiting ZVS stability above 60 kHz.	Selected when highest thermal efficiency is required and layout constraints allow separate diode placement with minimized loop area.

Compared with IXGN50N60B4 and IKW50N60H3, GT50JR21(STA1,E,S) provides superior ZVS capability via monolithic integration, delivering lower EMI, tighter timing control, and reduced layout sensitivity - making it the preferred choice for new 40–100 kHz resonant inverter designs where size, efficiency, and reliability are critical.

Availability

GT50JR21(STA1,E,S) is available at Aetrix Electronics and suitable for induction heating inverters, resonant DC-AC converters, and high-frequency welding supplies requiring stable component supply, long-lifecycle assurance, and traceable industrial-grade sourcing.

Supply support for GT50JR21(STA1,E,S) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of leadership in IGBT technology.

GT50JR21(STA1,E,S) belongs to Toshiba's 6.5th-generation RC-IGBT product line, engineered specifically for high-efficiency, high-frequency resonant inverter applications such as induction heating, welding, and RF plasma generation.

FAQ

What is the maximum allowable junction temperature for GT50JR21(STA1,E,S), and how does it impact thermal design?

The GT50JR21(STA1,E,S) has a maximum junction temperature (T_j) of 175 °C. This rating allows operation in high-ambient environments like sealed induction heating enclosures. With R_th(j-c) = 0.65 °C/W, designers can calculate case temperature rise (ΔT = P_diss × 0.65) to ensure T_j stays below 175 °C. Exceeding this limit risks thermal runaway due to the device's positive V_CE(sat) temperature coefficient - a key consideration in GT50JR21(STA1,E,S) thermal modeling.

Does GT50JR21(STA1,E,S) include an integrated freewheeling diode, and how does it differ from discrete diode solutions?

Yes, GT50JR21(STA1,E,S) is an RC-IGBT with a monolithically integrated freewheeling diode (FWD) fabricated on the same silicon die. Unlike discrete or co-packaged alternatives, this integration eliminates bond wire and PCB trace inductance between IGBT and diode, enabling precise timing alignment and suppressing voltage overshoot during turn-off. This makes GT50JR21(STA1,E,S) uniquely suited for zero-voltage-switching topologies where diode recovery must be tightly synchronized - a distinction confirmed in Toshiba's official documentation for GT50JR21(STA1,E,S).

What gate drive voltage range is specified for reliable operation of GT50JR21(STA1,E,S)?

The GT50JR21(STA1,E,S) specifies a gate-emitter voltage (V_GES) rating of ±25 V, with recommended operating V_GE = +15 V for turn-on and –15 V for turn-off. This bipolar gate drive ensures robust noise immunity and fast, controlled switching transitions. Driving outside ±25 V risks permanent gate oxide damage. The gate leakage current (I_GES) remains ≤ ±100 nA at ±25 V, confirming stable gate control integrity - a verified parameter in the GT50JR21(STA1,E,S) datasheet.

Can GT50JR21(STA1,E,S) be used in parallel configurations, and what design considerations apply?

Yes, GT50JR21(STA1,E,S) supports parallel operation due to its positive temperature coefficient for V_CE(sat), which promotes natural current sharing as junction temperature rises. However, successful paralleling requires matched gate drive loops (identical R_G, trace length, and layout symmetry) and thermally balanced mounting to avoid thermal runaway. Toshiba confirms this behavior in the GT50JR21(STA1,E,S) datasheet under "Static Characteristics" and "Thermal Characteristics", noting that parallel use is validated for industrial inverter applications.

Is GT50JR21(STA1,E,S) RoHS compliant, and what marking indicates compliance?

Yes, GT50JR21(STA1,E,S) is RoHS compliant, as indicated by the marking "[G]/RoHS COMPATIBLE" or "[G]/RoHS [Pb]" on the device body per Toshiba's documentation. This reflects compliance with Directive 2011/65/EU. Customers should verify the specific lot marking and consult Toshiba's environmental reports for detailed substance declarations. RoHS status is explicitly stated in the GT50JR21(STA1,E,S) datasheet revision 2.0.A, section "Marking (Note)".

GT50JR21(STA1,E,S) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-3P-3, SC-65-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 50 A

Current - Collector Pulsed (Icm):: 100 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 50A

Power - Max:: 230 W

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-3P(N)

GT50JR21(STA1,E,S) FAQ

1.How can I place an order for GT50JR21(STA1,E,S) through Aetrix?

Please submit a Request for Quotation (RFQ) for GT50JR21(STA1,E,S) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for GT50JR21(STA1,E,S) reliable?

The price and inventory of GT50JR21(STA1,E,S) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for GT50JR21(STA1,E,S) is usually 5 days.

3.What payment methods are accepted for GT50JR21(STA1,E,S)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for GT50JR21(STA1,E,S) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for GT50JR21(STA1,E,S)?

GT50JR21(STA1,E,S) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your GT50JR21(STA1,E,S) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for GT50JR21(STA1,E,S)?

For technical support, including GT50JR21(STA1,E,S) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your GT50JR21(STA1,E,S) requirements.

6.How does Aetrix verify that GT50JR21(STA1,E,S) is sourced from the original manufacturer or authorized distributors?

All GT50JR21(STA1,E,S) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that GT50JR21(STA1,E,S) meets industry standards.

7.What is the process for return or replacement of GT50JR21(STA1,E,S)?

All GT50JR21(STA1,E,S) units undergo pre-shipment inspection (PSI). If there is an issue with GT50JR21(STA1,E,S), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The GT50JR21(STA1,E,S) part is unused and in its original packaging.

Return procedure for GT50JR21(STA1,E,S):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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