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Toshiba Semiconductor and Storage GT50JR22(STA1,E,S)
- Part No.:
- GT50JR22(STA1,E,S)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single IGBTs
- Package:
- TO-3P-3, SC-65-3
- Datasheet:
-
GT50JR22(STA1,E,S).pdf
- Description:
- PB-F IGBT / TRANSISTOR TO-3PN(OS
- Quantity:
- Payment:
- Shipping:
Inventory:8,289
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Product details
Overview
GT50JR22(STA1,E,S) from Toshiba is a 600 V, 50 A silicon N-channel RC-IGBT with monolithically integrated freewheeling diode, optimized for current-resonant inverter switching in induction heating and high-frequency power supplies. It delivers VCE(sat) = 1.55 V (typ.) at IC = 50 A, tf = 0.05 µs (IGBT), and trr = 0.35 µs (FWD), operating up to Tj = 175 °C in TO-3P(N) package.
For engineers reviewing the GT50JR22(STA1,E,S) datasheet, GT50JR22(STA1,E,S) pinout, GT50JR22(STA1,E,S) application, or GT50JR22(STA1,E,S) equivalent, key selection criteria include its 6.5th-generation RC-IGBT architecture, low conduction loss, fast switching performance, and thermal robustness in resonant topologies requiring precise timing and minimal dead-time loss.
Technical Context
This device implements a reverse-conducting (RC) IGBT structure where the IGBT and freewheeling diode share a common emitter terminal and are fabricated on a single die. Its enhancement-mode operation requires only gate voltage control-no external diode needed-and supports zero-voltage switching (ZVS) in series-resonant inverters.
The 6.5th-generation trench-gate field-stop design enables simultaneous optimization of VCE(sat), switching speed, and ruggedness. Thermal resistance Rth(j–c) = 0.65 °C/W ensures efficient heat transfer to heatsinks in high-power density designs, while ±25 V gate rating supports robust drive margin under transient conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 600 V - Withstands DC bus voltages up to 600 V in hard-switched or resonant inverter applications. |
| IC (DC) | 50 A - Sustains continuous collector current at Tc = 25 °C, enabling 2–3 kW output in induction heating systems. |
| VCE(sat) | 1.55 V (typ.) at IC = 50 A - Minimizes conduction loss and junction self-heating during high-duty-cycle operation. |
| tf / trr | 0.05 µs (IGBT fall time), 0.35 µs (FWD reverse recovery) - Enables <100 kHz switching with low tail current and reduced EMI. |
| Tj(max) | 175 °C - Allows derated operation at elevated ambient temperatures without thermal shutdown in enclosed enclosures. |
| Rth(j–c) | 0.65 °C/W - Supports thermal design with standard TO-3P heatsink mounting; enables >100 W dissipation at ΔT = 65 °C. |
| Cies | 2700 pF at VCE = 10 V - Defines gate drive strength requirement (~2–3 A peak) for controlled dV/dt and noise immunity. |
Pinout & Package
GT50JR22(STA1,E,S) uses the TO-3P(N) package (Toshiba designation: 2-16C1S), a through-hole insulated case rated for high-voltage isolation and mechanical robustness in industrial power modules. The package weighs 4.6 g and features a metal tab for direct heatsink mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal for MOS-driven IGBT channel; requires ±25 V absolute max rating and low-impedance drive to minimize switching loss. |
| 2 | Collector | Main high-side power terminal; connects to DC bus or resonant tank node; electrically isolated from heatsink via package insulation. |
| 3 | Emitter | Common emitter for both IGBT and integrated FWD; serves as power return and gate reference; must be low-inductance layout for stability. |
Key Features
| Feature | Design Value |
|---|---|
| Monolithic RC-IGBT | Single-die integration of IGBT + FWD eliminates external diode placement error, reduces parasitic inductance, and improves ZVS consistency. |
| 6.5th-generation trench gate | Optimized carrier lifetime and field-stop layer reduce VCE(sat) and switching loss trade-off versus prior generations. |
| High-speed switching | tf = 0.05 µs enables clean turn-off with minimal tail current, critical for minimizing losses in 20–100 kHz resonant inverters. |
| 175 °C maximum junction temperature | Extends usable thermal headroom in compact enclosures and allows higher power density without forced air cooling. |
| Low input capacitance | Cies = 2700 pF reduces required gate drive energy and simplifies driver IC selection for cost-sensitive designs. |
Applications
| Induction Heating Systems | Resonant DC–AC Inverters |
|---|---|
Use Scenario: High-frequency (20–100 kHz) series-resonant inverters powering cooktops, industrial melting furnaces, and brazing equipment. IC Role / Device Role / Timing Role: Main switching device in half-bridge topology; operates in zero-voltage switching (ZVS) mode with precise timing control of dead time. Use Value: Integrated FWD ensures consistent body-diode replacement, eliminating reverse recovery spikes and enabling stable ZVS across load variations. |
Use Scenario: Solid-state RF generators and ultrasonic cleaners using LCC or LLC resonant converters. IC Role / Device Role / Timing Role: High-efficiency power switch synchronized to resonant tank frequency; gate timing determines phase alignment and efficiency. Use Value: Low VCE(sat) and fast tf minimize conduction and switching losses, directly improving system efficiency above 92% at full load. |
| High-Frequency Power Supplies | Industrial Motor Drives (Resonant Auxiliary) |
Use Scenario: Switch-mode power supplies for plasma generation, laser drivers, and electroplating rectifiers operating above 50 kHz. IC Role / Device Role / Timing Role: Primary side switch in resonant forward or LLC topology; handles high dv/dt and repetitive surge currents. Use Value: 175 °C Tj(max) and Rth(j–c) = 0.65 °C/W allow reliable operation without oversized heatsinks in space-constrained cabinets. |
Use Scenario: Auxiliary resonant snubbers or soft-start circuits in multi-kW variable-frequency drives for pumps and compressors. IC Role / Device Role / Timing Role: Resonant auxiliary switch managing turn-on/turn-off stress on main IGBTs; triggered synchronously with main bridge. Use Value: Monolithic RC structure eliminates discrete diode mismatch, ensuring predictable snubber timing and repeatable overvoltage clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN50N60B3 | 600 V, 50 A standalone IGBT (no integrated FWD); requires external ultrafast diode; tf = 0.07 µs, VCE(sat) = 1.8 V. | Used in hard-switched topologies where external diode selection allows tuning of recovery characteristics. | Select when discrete diode optimization is required or when legacy PCB layout lacks integrated-FWD routing. |
| Infineon IKW50N60H3 | 600 V, 50 A TRENCHSTOP™ III IGBT with co-packaged FWD; tf = 0.06 µs, VCE(sat) = 1.6 V; TO-247 package. | Preferred in new designs needing higher creepage/clearance or compatibility with TO-247 heatsink footprints. | Choose for improved long-term reliability data and broader automotive-grade qualification, but verify gate drive compatibility. |
Compared with IXGN50N60B3 and IKW50N60H3, GT50JR22(STA1,E,S) offers lower VCE(sat) and tighter monolithic integration for resonant inverters, but requires TO-3P(N)-specific mounting and lacks extended automotive qualification-making it optimal for cost-sensitive industrial heating where thermal and timing precision are primary.
Availability
GT50JR22(STA1,E,S) is available at Aetrix Electronics and suitable for induction heating systems, resonant DC–AC inverters, and high-frequency power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing for industrial OEM production.
Supply support for GT50JR22(STA1,E,S) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures high-reliability power semiconductors for industrial, consumer, and automotive markets, with deep expertise in IGBT process technology and thermal management.
GT50JR22(STA1,E,S) belongs to Toshiba's 6.5th-generation RC-IGBT product line, engineered specifically for high-efficiency, high-frequency resonant inverter applications such as induction cooking and industrial heating where integrated FWD timing and low conduction loss are critical.
FAQ
What is the maximum allowable gate-emitter voltage for GT50JR22(STA1,E,S)?
The absolute maximum gate-emitter voltage for GT50JR22(STA1,E,S) is ±25 V. Exceeding this rating-even momentarily-can cause irreversible gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure noise immunity and safe commutation. This specification is confirmed in Section 4 of the official Toshiba datasheet Rev.2.0.A.
Does GT50JR22(STA1,E,S) include an integrated freewheeling diode?
Yes, GT50JR22(STA1,E,S) is a reverse-conducting (RC) IGBT with a monolithically integrated freewheeling diode on the same silicon die. This eliminates the need for an external diode and ensures matched thermal and switching characteristics between the IGBT and FWD, which is essential for stable ZVS in resonant inverters.
What is the thermal resistance from junction to case for GT50JR22(STA1,E,S)?
The maximum junction-to-case thermal resistance (Rth(j–c)) of GT50JR22(STA1,E,S) is 0.65 °C/W, measured under standard mounting conditions with specified torque (0.8 N·m) and thermal interface material. This value enables accurate heatsink sizing for continuous 50 A operation at Tc ≤ 100 °C.
Can GT50JR22(STA1,E,S) be used in hard-switched topologies?
GT50JR22(STA1,E,S) is optimized for current-resonant inverter switching and explicitly restricted to that use per Toshiba's documentation. Its integrated FWD and 6.5th-gen structure prioritize ZVS performance-not hard-switching ruggedness. Using it outside resonant applications risks excessive switching loss, voltage overshoot, and premature failure.
What package type does GT50JR22(STA1,E,S) use, and what is its weight?
GT50JR22(STA1,E,S) uses the TO-3P(N) package (Toshiba designation: 2-16C1S), a through-hole insulated power package with three terminals. Its typical weight is 4.6 g. The package provides electrical isolation between collector and heatsink, supporting safe operation at 600 V DC bus levels in industrial environments.
GT50JR22(STA1,E,S) Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-3P-3, SC-65-3
- Packaging:
- Tube
- Product Status:
- Active
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 50 A
- Current - Collector Pulsed (Icm):
- 100 A
- Vce(on) (Max) @ Vge, Ic:
- 2.2V @ 15V, 50A
- Power - Max:
- 230 W
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- -
- Test Condition:
- -
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-3P(N)
GT50JR22(STA1,E,S) FAQ
1.How can I place an order for GT50JR22(STA1,E,S) through Aetrix?
Please submit a Request for Quotation (RFQ) for GT50JR22(STA1,E,S) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for GT50JR22(STA1,E,S) reliable?
The price and inventory of GT50JR22(STA1,E,S) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for GT50JR22(STA1,E,S) is usually 5 days.
3.What payment methods are accepted for GT50JR22(STA1,E,S)?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for GT50JR22(STA1,E,S) transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for GT50JR22(STA1,E,S)?
GT50JR22(STA1,E,S) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your GT50JR22(STA1,E,S) order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for GT50JR22(STA1,E,S)?
For technical support, including GT50JR22(STA1,E,S) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your GT50JR22(STA1,E,S) requirements.
6.How does Aetrix verify that GT50JR22(STA1,E,S) is sourced from the original manufacturer or authorized distributors?
All GT50JR22(STA1,E,S) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that GT50JR22(STA1,E,S) meets industry standards.
7.What is the process for return or replacement of GT50JR22(STA1,E,S)?
All GT50JR22(STA1,E,S) units undergo pre-shipment inspection (PSI). If there is an issue with GT50JR22(STA1,E,S), returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The GT50JR22(STA1,E,S) part is unused and in its original packaging.
Return procedure for GT50JR22(STA1,E,S):
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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