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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

onsemi HGT1S10N120BNS

Name: HGT1S10N120BNS
Brand: onsemi
SKU: HGT1S10N120BNS
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: HGT1S10N120BNS

Manufacturer:: onsemi

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: HGT1S10N120BNS.pdf

Description:: IGBT 1200V 35A 298W TO263AB

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Product details

Overview

HGT1S10N120BNS from ON Semiconductor (formerly Fairchild) is a 1200V, 35A Non-Punch Through (NPT) N-channel IGBT in TO-263AB surface-mount package, optimized for high-voltage switching in motor drives and industrial power supplies with low conduction loss and 140ns typical fall time at TJ = 150°C.

For engineers reviewing the HGT1S10N120BNS datasheet, pinout, applications, or equivalent options, key selection criteria include its 1200V blocking capability, 8µs short-circuit withstand time at VGE = 15V, avalanche rating, thermal impedance of 0.42°C/W, and compatibility with gate drive voltages up to ±30V pulsed.

Technical Context

The HGT1S10N120BNS uses an NPT IGBT structure combining MOSFET-like high input impedance with bipolar transistor-level conduction efficiency. Its gate threshold voltage is 6.8V (typ), and it features a gate plateau voltage of 10.4V (typ) at IC = 10A, enabling stable turn-on control under varying temperature conditions.

It delivers 2.45V (typ) VCE(SAT) at IC = 10A and VGE = 15V, TC = 25°C, rising to 3.7V (typ) at TC = 150°C - confirming robust performance across industrial temperature ranges. Switching energy is characterized by EON2 = 0.85 mJ (typ) and EOFF = 0.8 mJ (typ) under standard test conditions (RG = 10Ω, L = 2mH, VCE = 960V).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1200 V - Enables use in 1000V DC bus systems with 20% safety margin.
I_C (continuous, T_C = 25°C)	35 A - Supports medium-power inverters without forced cooling at ambient.
V_CE(SAT) (T_C = 25°C)	2.45 V (typ) - Low conduction loss reduces heat generation in 5–20 kHz motor drive applications.
t_SC (V_GE = 15 V)	8 µs - Provides deterministic fault response time for overcurrent protection circuit design.
R_θJC	0.42 °C/W - Allows accurate junction temperature estimation using case temperature measurement.
E_OFF	0.8 mJ (typ) - Defines minimum dead-time requirements and snubber sizing for 1200V hard-switched topologies.
Q_G(ON) (V_GE = 15 V)	100 nC (typ) - Determines required gate driver peak current (≥1 A for 100 ns rise time).

Pinout & Package

Package: JEDEC TO-263AB (D²PAK), surface-mount, isolated flange (collector-connected tab), 3-terminal configuration.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path terminal, connected to flange	Flange must be electrically isolated from heatsink unless collector reference is used; thermal path dominates thermal resistance.
Emitter (E)	Low-side return path for load current	Common reference for gate drive and current sensing; layout must minimize inductance to avoid spurious turn-on.
Gate (G)	Control input for MOS-gated base region	High-impedance node requiring low-inductance gate loop; external Zener clamping recommended per handling precautions.

Key Features

Feature	Design Value
Avalanche rated	80 mJ forward voltage avalanche energy (ICE = 20A, L = 400µH, TJ = 25°C) enables unclamped inductive switching robustness.
Short-circuit withstand	8 µs at VGE = 15V (VCE(PK) = 840V, TJ = 125°C, RG = 10Ω) supports reliable fault detection in motor drive protection schemes.
Thermal SPICE model	Includes temperature-compensating SABER™ model for transient thermal simulation of junction-to-case dynamics.
Switching SOA	55A at 1200V (TJ = 150°C, RG = 10Ω, VGE = 15V, L = 400µH) defines safe operating boundary for hard-switched operation.
NPT architecture	Non-Punch Through structure ensures positive temperature coefficient of VCE(SAT), enabling inherent current sharing in parallel configurations.

Applications

Industrial Motor Drives	Uninterruptible Power Supplies
Use Scenario: Three-phase inverter stage in 5–15 kW AC servo drives operating at 8–16 kHz switching frequency. IC Role / Device Role / Timing Role: Main switching device in high-side leg; handles bidirectional reactive current during regeneration. Use Value: 1200V rating accommodates 800V DC link with voltage spikes; low VCE(SAT) minimizes conduction loss at 35A RMS output.	Use Scenario: Output inverter stage in online double-conversion UPS systems with 400V AC input and 230V/400V AC output. IC Role / Device Role / Timing Role: High-voltage switch in full-bridge topology; commutates 50/60 Hz fundamental with high-frequency PWM carrier. Use Value: Avalanche rating protects against transformer leakage inductance energy during transfer switching; 140ns fall time enables clean zero-crossing transitions.
Solar Inverters	Induction Heating Systems
Use Scenario: DC–AC stage in string inverters converting 600–1000V PV array voltage to grid-synchronized 230V/400V AC. IC Role / Device Role / Timing Role: High-side switch in NPC or T-type three-level topology; blocks reverse voltage during freewheeling. Use Value: 1200V BVCES supports 1000V DC bus with margin; 0.42°C/W RθJC simplifies thermal design for outdoor-rated enclosures.	Use Scenario: Half-bridge resonant inverter in 3–10 kW induction cooktops operating at 20–50 kHz. IC Role / Device Role / Timing Role: Fast-switching power switch in series-resonant tank; conducts high di/dt currents with minimal tail current. Use Value: NPT structure provides predictable tail current decay; 100nC QG(ON) enables efficient gate driving with integrated drivers like FAN322x.

Industrial Motor Drives

Uninterruptible Power Supplies

Use Scenario: Three-phase inverter stage in 5–15 kW AC servo drives operating at 8–16 kHz switching frequency.

IC Role / Device Role / Timing Role: Main switching device in high-side leg; handles bidirectional reactive current during regeneration.

Use Value: 1200V rating accommodates 800V DC link with voltage spikes; low VCE(SAT) minimizes conduction loss at 35A RMS output.

Use Scenario: Output inverter stage in online double-conversion UPS systems with 400V AC input and 230V/400V AC output.

IC Role / Device Role / Timing Role: High-voltage switch in full-bridge topology; commutates 50/60 Hz fundamental with high-frequency PWM carrier.

Use Value: Avalanche rating protects against transformer leakage inductance energy during transfer switching; 140ns fall time enables clean zero-crossing transitions.

Solar Inverters

Induction Heating Systems

Use Scenario: DC–AC stage in string inverters converting 600–1000V PV array voltage to grid-synchronized 230V/400V AC.

IC Role / Device Role / Timing Role: High-side switch in NPC or T-type three-level topology; blocks reverse voltage during freewheeling.

Use Value: 1200V BVCES supports 1000V DC bus with margin; 0.42°C/W RθJC simplifies thermal design for outdoor-rated enclosures.

Use Scenario: Half-bridge resonant inverter in 3–10 kW induction cooktops operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Fast-switching power switch in series-resonant tank; conducts high di/dt currents with minimal tail current.

Use Value: NPT structure provides predictable tail current decay; 100nC QG(ON) enables efficient gate driving with integrated drivers like FAN322x.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN100N120B3	1200V/100A TO-247, higher current rating, 1.8V VCE(SAT), 1.2µs tSC	Designed for higher-power 30–50 kW inverters; requires larger heatsink and gate driver current capability	Select when scaling system power beyond 15 kW or needing longer short-circuit tolerance
Infineon IKW20N120T2	1200V/20A TO-247, TRENCHSTOP™ IGBT, 1.95V VCE(SAT), 6µs tSC, lower QG	Optimized for higher-frequency (30–60 kHz) soft-switching; reduced switching loss but lower current rating	Select when prioritizing EMI reduction and higher switching frequency over current density

Compared with HGT1S10N120BNS, IXGN100N120B3 offers higher current headroom at the cost of larger footprint and gate drive demand, while IKW20N120T2 trades current capacity for faster switching and lower gate charge - making HGT1S10N120BNS optimal for cost-sensitive 5–15 kW hard-switched industrial drives where thermal management favors surface-mount integration.

Availability

HGT1S10N120BNS is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar inverters, and induction heating systems requiring stable component supply and long-term manufacturability.

Supply support for HGT1S10N120BNS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (formerly Fairchild Semiconductor) is a global semiconductor manufacturer specializing in power management, analog, sensor, and discrete devices for automotive, industrial, and cloud power applications.

The HGT1S10N120BNS belongs to ON Semiconductor's legacy NPT IGBT family, engineered for rugged high-voltage switching in industrial motor controls and power conversion where reliability under overload and short-circuit conditions is critical.

FAQ

What is the maximum gate-emitter voltage rating for HGT1S10N120BNS?

The HGT1S10N120BNS has a continuous gate-emitter voltage rating of ±20 V and a pulsed rating of ±30 V. Exceeding ±30 V even momentarily risks permanent oxide damage. Gate drive circuits must include clamping (e.g., 18 V Zener) and low-inductance layout to prevent ringing-induced overshoot. The HGT1S10N120BNS gate oxide is not protected by an internal Zener, so external protection is mandatory per Fairchild handling guidelines.

Does HGT1S10N120BNS support parallel operation?

Yes, the HGT1S10N120BNS supports parallel operation due to its Non-Punch Through (NPT) structure, which provides a positive temperature coefficient for VCE(SAT). As junction temperature rises, VCE(SAT) increases, promoting natural current sharing among paralleled devices. Successful implementation requires matched gate drive loops, symmetrical PCB layout, and individual gate resistors - all verified in application note AN-9012 for Fairchild NPT IGBTs.

What is the thermal resistance junction-to-case for HGT1S10N120BNS?

The thermal resistance junction-to-case (RθJC) for HGT1S10N120BNS is 0.42°C/W, measured per JEDEC standard JESD51-14. This value applies to the TO-263AB package with proper mounting pressure (25–35 lbf/in²) and thermal interface material (TIM) on the collector flange. It enables accurate junction temperature prediction using case temperature measurements in real-time thermal monitoring systems for the HGT1S10N120BNS.

Is HGT1S10N120BNS avalanche-rated, and what does that mean for circuit design?

Yes, the HGT1S10N120BNS is avalanche-rated with 80 mJ forward voltage avalanche energy (EAV) under specified test conditions (ICE = 20A, L = 400µH, TJ = 25°C). This rating allows controlled energy dissipation during unclamped inductive switching events - such as contactor opening or transformer saturation - without immediate failure. Circuit designers can rely on this rating to simplify snubber design and improve system robustness in the HGT1S10N120BNS-based inverters.

What is the short-circuit withstand time for HGT1S10N120BNS at different gate voltages?

The HGT1S10N120BNS has a short-circuit withstand time of 8 µs at VGE = 15 V and 15 µs at VGE = 12 V, tested under VCE(PK) = 840 V, TJ = 125°C, and RG = 10Ω. This inverse relationship reflects lower gate overdrive reducing current density during fault, extending safe conduction time. Protection circuits for the HGT1S10N120BNS must detect faults and disable gate drive within these limits to prevent thermal runaway.

HGT1S10N120BNS Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 35 A

Current - Collector Pulsed (Icm):: 80 A

Vce(on) (Max) @ Vge, Ic:: 2.7V @ 15V, 10A

Power - Max:: 298 W

Switching Energy:: 320µJ (on), 800µJ (off)

Input Type:: Standard

Gate Charge:: 100 nC

Td (on/off) @ 25°C:: 23ns/165ns

Test Condition:: 960V, 10A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

HGT1S10N120BNS FAQ

1.How can I place an order for HGT1S10N120BNS through Aetrix?

Please submit a Request for Quotation (RFQ) for HGT1S10N120BNS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HGT1S10N120BNS reliable?

The price and inventory of HGT1S10N120BNS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HGT1S10N120BNS is usually 5 days.

3.What payment methods are accepted for HGT1S10N120BNS?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HGT1S10N120BNS transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HGT1S10N120BNS?

HGT1S10N120BNS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HGT1S10N120BNS order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HGT1S10N120BNS?

For technical support, including HGT1S10N120BNS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HGT1S10N120BNS requirements.

6.How does Aetrix verify that HGT1S10N120BNS is sourced from the original manufacturer or authorized distributors?

All HGT1S10N120BNS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HGT1S10N120BNS meets industry standards.

7.What is the process for return or replacement of HGT1S10N120BNS?

All HGT1S10N120BNS units undergo pre-shipment inspection (PSI). If there is an issue with HGT1S10N120BNS, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HGT1S10N120BNS part is unused and in its original packaging.

Return procedure for HGT1S10N120BNS:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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