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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

onsemi HGT1S20N35G3VLS

Name: HGT1S20N35G3VLS
Brand: onsemi
SKU: HGT1S20N35G3VLS
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: HGT1S20N35G3VLS

Manufacturer:: onsemi

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: HGT1S20N35G3VLS.pdf

Description:: IGBT 380V 20A 150W TO263AB

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Product details

Overview

HGT1S20N35G3VLS from Fairchild Semiconductor is a 20A, 350V N-channel logic-level IGBT with integrated voltage clamping, designed specifically as an ignition coil driver in automotive gasoline engine ignition systems. It features self-clamped inductive switching (SCIS), 175°C maximum junction temperature, internal gate ESD protection, and TO-263AB surface-mount packaging.

For engineers reviewing the HGT1S20N35G3VLS datasheet, pinout, applications, or equivalent options, key selection criteria include SCIS-rated inductive current (21 A at 25°C), V_CE(SAT) ≤ 1.6 V at 10 A/4.5 V, gate plateau voltage of 3.7 V, integrated R₁/R₂ gate resistors, and ±10 V gate-emitter rating.

Technical Context

This IGBT implements a MOS-gated, enhancement-mode structure with active collector-to-gate voltage clamping to enable robust self-clamped inductive switching-critical for high-energy ignition coil discharge without external snubbers. The internal gate circuit includes a 1.0 kΩ series resistor (R₁) and a 10–25 kΩ shunt resistor (R₂) to stabilize turn-on/turn-off dynamics and suppress oscillation.

It operates across –40°C to +175°C junction temperature, supports 5 V logic-level gate drive, and delivers 500 mJ avalanche energy at 25°C. Its BVCER rating of 375 V (with R_GE = 1 kΩ) and BVCE(CL) of 360 V (typ.) at 175°C ensure reliable operation under transient overvoltage conditions typical in automotive ignition circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
BVCER	375 V min at TC = 25°C, R_GE = 1 kΩ - ensures safe blocking during ignition coil flyback transients
V_CE(SAT)	1.3–1.6 V max at IC = 10 A, V_GE = 4.5 V, 25°C - enables low conduction loss and minimal thermal stress in pulsed ignition duty
ISCIS	21 A at L = 2.3 mH, TC = 25°C - defines maximum inductive peak current capability under SCIS mode
EAS	500 mJ at L = 2.3 mH, TC = 25°C - quantifies single-pulse avalanche energy handling for unclamped inductive faults
R_θJC	1.0 °C/W - enables 150 W power dissipation at 25°C case temperature, supporting high-duty-cycle ignition pulses
T_J max	+175°C - allows operation in under-hood environments without derating in most automotive applications
Q_G(ON)	28.7 nC typ. - determines gate drive strength requirement and switching speed trade-offs in ignition timing control

Pinout & Package

Package: JEDEC TO-263AB (D²PAK), surface-mount, isolated flange (collector-connected). Thermal pad on underside requires soldered thermal interface to PCB ground plane.

Pin/Terminal	Circuit Role	Design Meaning
Collector (Flange)	Main high-side power terminal	Electrically and thermally connected to metal flange; must be electrically isolated from heatsink unless collector-referenced layout is used
Emitter	Power return and reference node	Serves as source of gate drive return path and current sense reference; low-inductance routing critical for SCIS stability
Gate	Control input	Logic-level compatible (V_GE(TH) = 1.3–2.3 V); internal R₁/R₂ resistors reduce need for external gate network

Key Features

Feature	Design Value
Self-Clamped Inductive Switching (SCIS)	Enables direct driving of ignition coils up to 2.3 mH without external clamp diodes or snubbers, reducing BOM count and board space
Integrated Gate Protection Network	Includes 1.0 kΩ series resistor (R₁) and 10–25 kΩ shunt resistor (R₂) to damp ringing and limit dV/dt-induced false triggering
ESD-Rated Gate Structure	6 kV HBM rating per JESD22-A114 - eliminates need for external ESD protection in assembly and handling
High-Temperature Operation	Rated for continuous operation up to T_J = +175°C - meets under-hood thermal requirements for modern engine control units
Logic-Level Gate Drive Compatibility	Turns on fully at V_GE ≥ 4.5 V - interfaces directly with standard 5 V microcontroller GPIO or dedicated ignition drivers without level-shifting

Applications

Ignition Coil Driver	Engine Control Unit (ECU) Output Stage
Use Scenario: Driving primary winding of distributorless ignition system (DIS) coils in 4–8 cylinder gasoline engines. IC Role / Device Role / Timing Role: High-current, high-voltage switch controlling coil energization and controlled collapse for spark generation. Use Value: SCIS capability eliminates external clamp diodes, reducing component count and improving reliability in harsh under-hood environments.	Use Scenario: Final output stage in modular ECUs where ignition timing is managed by MCU with PWM or one-shot trigger signals. IC Role / Device Role / Timing Role: Power switch translating low-power timing commands into high-energy coil discharge events with sub-microsecond edge control. Use Value: 28.7 nC gate charge and 3.7 V gate plateau enable precise timing resolution and consistent spark energy across temperature.
Direct Ignition System (DIS)	Coil-On-Plug (COP) Module
Use Scenario: Paired-coil DIS architectures where one IGBT drives two spark plugs via shared coil secondary windings. IC Role / Device Role / Timing Role: Bidirectional switching element enabling sequential or wasted-spark firing strategies. Use Value: 375 V BVCER and 500 mJ EAS support repeated high-energy switching without degradation in multi-cylinder timing sequences.	Use Scenario: Compact COP modules mounted directly on spark plugs, requiring high power density and thermal resilience. IC Role / Device Role / Timing Role: Primary-side switch in ultra-compact, thermally constrained ignition modules. Use Value: TO-263AB package with 1.0 °C/W R_θJC enables effective heat transfer to aluminum housing, sustaining 175°C junction operation without forced cooling.

Ignition Coil Driver

Engine Control Unit (ECU) Output Stage

Use Scenario: Driving primary winding of distributorless ignition system (DIS) coils in 4–8 cylinder gasoline engines.

IC Role / Device Role / Timing Role: High-current, high-voltage switch controlling coil energization and controlled collapse for spark generation.

Use Value: SCIS capability eliminates external clamp diodes, reducing component count and improving reliability in harsh under-hood environments.

Use Scenario: Final output stage in modular ECUs where ignition timing is managed by MCU with PWM or one-shot trigger signals.

IC Role / Device Role / Timing Role: Power switch translating low-power timing commands into high-energy coil discharge events with sub-microsecond edge control.

Use Value: 28.7 nC gate charge and 3.7 V gate plateau enable precise timing resolution and consistent spark energy across temperature.

Direct Ignition System (DIS)

Coil-On-Plug (COP) Module

Use Scenario: Paired-coil DIS architectures where one IGBT drives two spark plugs via shared coil secondary windings.

IC Role / Device Role / Timing Role: Bidirectional switching element enabling sequential or wasted-spark firing strategies.

Use Value: 375 V BVCER and 500 mJ EAS support repeated high-energy switching without degradation in multi-cylinder timing sequences.

Use Scenario: Compact COP modules mounted directly on spark plugs, requiring high power density and thermal resilience.

IC Role / Device Role / Timing Role: Primary-side switch in ultra-compact, thermally constrained ignition modules.

Use Value: TO-263AB package with 1.0 °C/W R_θJC enables effective heat transfer to aluminum housing, sustaining 175°C junction operation without forced cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT ignition driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP20NC35HD	350 V, 20 A, TO-220FP package; no integrated voltage clamp; requires external clamp diode for SCIS	Lacks self-clamped switching; suitable only when external clamping is acceptable in layout	Choose if cost sensitivity outweighs board space and reliability benefits of integrated clamp
IXGN20N350	350 V, 20 A, TO-247 package; higher Q_G (45 nC); no integrated R₁/R₂; 150°C T_J max	Requires external gate network and thermal derating above 150°C; not qualified for 175°C sustained operation	Prefer only when legacy TO-247 footprint or higher peak current margin is mandatory

Compared with STGP20NC35HD and IXGN20N350, the HGT1S20N35G3VLS uniquely integrates SCIS capability, gate protection resistors, and 175°C operation in a surface-mount TO-263AB package-enabling smaller, more robust ignition modules without external clamping or gate tuning components.

Availability

HGT1S20N35G3VLS is available at Aetrix Electronics and suitable for automotive ignition systems, engine control units, and coil-on-plug modules requiring stable component supply, long-lifecycle support, and AEC-Q101-aligned reliability.

Supply support for HGT1S20N35G3VLS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based analog and power semiconductor manufacturer, acquired by ON Semiconductor in 2016; its legacy automotive and power products remain widely deployed and supported.

The HGT1S20N35G3VLS belongs to Fairchild's "Voltage Clamping IGBT" product line, engineered specifically for high-reliability, high-energy automotive ignition applications where self-clamped switching, logic-level drive, and extreme temperature resilience are mandatory.

FAQ

What is the maximum inductive switching current rating for the HGT1S20N35G3VLS?

The HGT1S20N35G3VLS is rated for 21 A inductive switching current (ISCIS) at L = 2.3 mH and TC = +25°C, and 16 A at TC = +150°C. This rating reflects its Self Clamped Inductive Switching (SCIS) capability, which relies on the internal voltage clamp to safely dissipate energy during coil flyback without external components. The HGT1S20N35G3VLS must be operated within these limits to maintain reliability and avoid avalanche overstress.

Does the HGT1S20N35G3VLS require external gate resistors?

No-the HGT1S20N35G3VLS integrates a 1.0 kΩ gate series resistor (R₁) and a 10–25 kΩ gate shunt resistor (R₂) internally. These resistors damp gate oscillation, improve dV/dt immunity, and stabilize switching behavior in ignition coil applications. External gate resistors are generally unnecessary unless fine-tuning of turn-on/turn-off speed is required for specific EMI or timing constraints in the HGT1S20N35G3VLS design.

What is the gate threshold voltage range for the HGT1S20N35G3VLS?

The gate-emitter threshold voltage (V_GE(TH)) for the HGT1S20N35G3VLS is specified as 1.3 V (min), 1.8 V (typ), and 2.3 V (max) at IC = 1 mA and TC = +25°C. This low, logic-compatible threshold enables full enhancement with standard 4.5–5.0 V microcontroller outputs, making the HGT1S20N35G3VLS suitable for direct drive without level-shifting circuitry in automotive ECU designs.

Can the HGT1S20N35G3VLS be used in surface-mount reflow assembly?

Yes-the HGT1S20N35G3VLS uses the JEDEC TO-263AB (D²PAK) package, which is qualified for standard lead-free reflow soldering with a maximum lead temperature of 260°C. Its flange-mounted collector requires proper thermal pad stencil design and solder paste volume control to ensure mechanical integrity and thermal performance. Reflow profiles must comply with Fairchild's recommended thermal limits to preserve the HGT1S20N35G3VLS internal structure and gate oxide integrity.

Is the HGT1S20N35G3VLS compliant with AEC-Q101?

While the HGT1S20N35G3VLS datasheet does not explicitly state AEC-Q101 qualification, it was developed and characterized for automotive ignition applications with features aligned to AEC-Q101 requirements-including 175°C operation, 6 kV HBM ESD rating, and rigorous inductive switching validation. For production use in automotive safety-critical systems, users should confirm qualification status through ON Semiconductor's current product documentation, as Fairchild's original qualification records may require revalidation under ON Semi's quality program for the HGT1S20N35G3VLS.

HGT1S20N35G3VLS Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 375 V

Current - Collector (Ic) (Max):: 20 A

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: 2.8V @ 5V, 20A

Power - Max:: 150 W

Switching Energy:: -

Input Type:: Logic

Gate Charge:: 28.7 nC

Td (on/off) @ 25°C:: -/15µs

Test Condition:: 300V, 10A, 25Ohm, 5V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

HGT1S20N35G3VLS FAQ

1.How can I place an order for HGT1S20N35G3VLS through Aetrix?

Please submit a Request for Quotation (RFQ) for HGT1S20N35G3VLS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HGT1S20N35G3VLS reliable?

The price and inventory of HGT1S20N35G3VLS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HGT1S20N35G3VLS is usually 5 days.

3.What payment methods are accepted for HGT1S20N35G3VLS?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HGT1S20N35G3VLS transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HGT1S20N35G3VLS?

HGT1S20N35G3VLS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HGT1S20N35G3VLS order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HGT1S20N35G3VLS?

For technical support, including HGT1S20N35G3VLS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HGT1S20N35G3VLS requirements.

6.How does Aetrix verify that HGT1S20N35G3VLS is sourced from the original manufacturer or authorized distributors?

All HGT1S20N35G3VLS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HGT1S20N35G3VLS meets industry standards.

7.What is the process for return or replacement of HGT1S20N35G3VLS?

All HGT1S20N35G3VLS units undergo pre-shipment inspection (PSI). If there is an issue with HGT1S20N35G3VLS, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HGT1S20N35G3VLS part is unused and in its original packaging.

Return procedure for HGT1S20N35G3VLS:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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