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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

onsemi HGT1S7N60A4DS

Name: HGT1S7N60A4DS
Brand: onsemi
SKU: HGT1S7N60A4DS
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: HGT1S7N60A4DS

Manufacturer:: onsemi

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: HGT1S7N60A4DS.pdf

Description:: IGBT 600V 34A 125W TO263AB

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Product details

Overview

HGT1S7N60A4DS from Fairchild Semiconductor is a 600V, N-channel IGBT with integrated anti-parallel hyperfast diode in TO-263AB (D²PAK) package, rated for 7A continuous collector current at 25°C and optimized for high-frequency switch-mode power supplies. It delivers 1.9V typical V_CE(SAT) at 7A/15V_GE, 75ns fall time at 125°C, and supports >100kHz operation at 390V/7A.

For engineers reviewing the HGT1S7N60A4DS datasheet, pinout, applications, or equivalent options, key selection criteria include switching SOA at 600V, thermal resistance of 1.0°C/W (IGBT), diode reverse recovery time of 34ns, and gate charge of 37nC (typical at 15V).

Technical Context

This IGBT uses MOS-gated bipolar conduction architecture to combine high input impedance with low conduction loss. Its V_CE(SAT) varies only moderately from 25°C to 150°C, enabling stable performance across wide temperature ranges in high-reliability SMPS designs.

The integrated hyperfast diode (development type TA49370) provides 2.4V forward voltage at 7A and 34ns reverse recovery time at 7A/200A/µs, minimizing commutation losses in bridge topologies. The device is characterized for switching safe operating area up to 35A at 600V and short-circuit withstand time of ≥10µs at 125°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE(SAT)	1.9V typ @ 7A, 15V_GE, 25°C - enables low conduction loss in 390V bus applications
f_MAX	>100kHz @ 390V/7A - supports high-frequency SMPS designs without excessive switching loss
t_fI	75ns typ @ T_J = 125°C - ensures fast turn-off for reduced tail loss in hard-switched converters
R_θJC (IGBT)	1.0°C/W - allows efficient heat transfer to heatsink in TO-263AB surface-mount layout
trr (Diode)	34ns typ @ 7A, 200A/µs - minimizes reverse recovery energy in synchronous rectification and half-bridge circuits
BV_CES	600V - provides 20% margin over standard 480VAC-derived 390V DC bus systems
Q_g(ON)	37nC typ @ 15V_GE - determines gate driver power requirement and influences switching speed control

Pinout & Package

Package: JEDEC TO-263AB (D²PAK), surface-mount, isolated flange (collector-connected tab).

Pin/Terminal	Circuit Role	Design Meaning
Collector (Flange)	Main power output terminal / heatsink interface	Electrically connected to metal flange; requires insulated mounting in most PCB layouts
Emitter	Power return path / reference node for gate drive	Serves as common reference for gate-emitter voltage; must be low-inductance connection to minimize ringing
Gate	Control input for MOS-driven bipolar conduction	Capacitive input (Q_g = 37nC); requires external gate resistor (e.g., 25Ω) to balance speed vs. overshoot

Key Features

Feature	Design Value
Integrated hyperfast diode	34ns trr at 7A enables zero-voltage switching (ZVS) assist in resonant topologies
Temperature-stable V_CE(SAT)	1.6V typ @ 125°C - reduces thermal runaway risk in parallel configurations
Switching SOA	35A @ 600V, T_J = 150°C - supports robust operation under transient overloads without secondary breakdown
Low gate charge	37nC @ 15V - lowers gate driver power dissipation and simplifies driver IC selection
Short-circuit withstand	≥10µs @ 125°C - allows time for protection circuitry to respond before device failure

Applications

Server PSU	Industrial Motor Drive
Use Scenario: Primary-side switching in 1–3kW telecom/server power supplies with 390V DC bus. IC Role / Device Role / Timing Role: High-side IGBT switch in phase-shifted full-bridge topology, operating at 100–200kHz. Use Value: 1.9V V_CE(SAT) and 75ns t_fI reduce total losses by ~18% vs. comparable 600V IGBTs, improving efficiency above 90% at full load.	Use Scenario: Inverter leg switching in 0.75–2.2kW variable-frequency drives for pumps and fans. IC Role / Device Role / Timing Role: Half-bridge switch with integrated diode handling reactive motor current regeneration. Use Value: 34ns diode trr and 35A/600V SOA prevent shoot-through during commutation and sustain overload conditions without derating.
LED Streetlight Driver	Induction Heating Inverter
Use Scenario: Buck-boost PFC + LLC resonant stage in outdoor-rated LED drivers (150–300W). IC Role / Device Role / Timing Role: Main switch in asymmetric half-bridge LLC primary, operating at 200–300kHz. Use Value: Low Q_g (37nC) and fast tfI enable precise timing control for ZVS transition, reducing EMI and improving light-output stability.	Use Scenario: Full-bridge inverter in 1–5kW domestic/industrial induction cooktops. IC Role / Device Role / Timing Role: High-current switching element handling 7A peak load with rapid polarity reversal. Use Value: 1.0°C/W R_θJC and 150°C max T_J allow compact heatsinking while sustaining 100% duty-cycle bursts during pan detection cycles.

Server PSU

Industrial Motor Drive

Use Scenario: Primary-side switching in 1–3kW telecom/server power supplies with 390V DC bus.

IC Role / Device Role / Timing Role: High-side IGBT switch in phase-shifted full-bridge topology, operating at 100–200kHz.

Use Value: 1.9V V_CE(SAT) and 75ns t_fI reduce total losses by ~18% vs. comparable 600V IGBTs, improving efficiency above 90% at full load.

Use Scenario: Inverter leg switching in 0.75–2.2kW variable-frequency drives for pumps and fans.

IC Role / Device Role / Timing Role: Half-bridge switch with integrated diode handling reactive motor current regeneration.

Use Value: 34ns diode trr and 35A/600V SOA prevent shoot-through during commutation and sustain overload conditions without derating.

LED Streetlight Driver

Induction Heating Inverter

Use Scenario: Buck-boost PFC + LLC resonant stage in outdoor-rated LED drivers (150–300W).

IC Role / Device Role / Timing Role: Main switch in asymmetric half-bridge LLC primary, operating at 200–300kHz.

Use Value: Low Q_g (37nC) and fast tfI enable precise timing control for ZVS transition, reducing EMI and improving light-output stability.

Use Scenario: Full-bridge inverter in 1–5kW domestic/industrial induction cooktops.

IC Role / Device Role / Timing Role: High-current switching element handling 7A peak load with rapid polarity reversal.

Use Value: 1.0°C/W R_θJC and 150°C max T_J allow compact heatsinking while sustaining 100% duty-cycle bursts during pan detection cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP7NC60HD	600V/16A IGBT in TO-220; higher I_C rating but no integrated diode; 2.2V V_CE(SAT) @ 7A	Requires external ultrafast diode; better suited for lower-frequency, higher-current motor drives	Select when higher current headroom is needed and board space permits discrete diode placement
IXYS IXGN75N60B3	600V/75A IGBT in TO-247; 1.8V V_CE(SAT); no integrated diode; 1.2°C/W R_θJC	Designed for paralleling and high-power industrial inverters; lacks monolithic diode integration	Choose for multi-kW systems requiring paralleled devices and external diode optimization

Compared with STGP7NC60HD and IXGN75N60B3, the HGT1S7N60A4DS offers superior integration (monolithic hyperfast diode), lower thermal resistance in surface-mount form factor, and tighter V_CE(SAT) tolerance-making it optimal for space-constrained, high-frequency SMPS where layout simplicity and thermal performance are critical.

Availability

HGT1S7N60A4DS is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, LED streetlight drivers, and induction heating inverters requiring stable component supply and long-term manufacturability.

Supply support for HGT1S7N60A4DS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor (now part of ON Semiconductor) is a legacy analog and power semiconductor manufacturer known for high-reliability IGBTs, MOSFETs, and optocouplers used in industrial, computing, and consumer power systems.

The HGT1S7N60A4DS belongs to Fairchild's SMPS Series IGBT family, designed specifically for high-frequency switch-mode power conversion where low conduction loss, fast switching, and integrated diode functionality are essential.

FAQ

What is the maximum continuous collector current rating for HGT1S7N60A4DS at 110°C case temperature?

The HGT1S7N60A4DS is rated for 14A continuous collector current at T_C = 110°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-263AB package and internal die construction. At 25°C, the rating rises to 34A, but real-world designs must respect the 14A limit under sustained 110°C case conditions to avoid exceeding 150°C junction temperature. The HGT1S7N60A4DS datasheet confirms this value in the "Collector Current Continuous" row under "At TC = 110°C".

Does HGT1S7N60A4DS include an integrated diode, and what are its key parameters?

Yes, the HGT1S7N60A4DS integrates an anti-parallel hyperfast diode (development type TA49370). Key parameters include 2.4V forward voltage at 7A, 34ns reverse recovery time at 7A/200A/µs, and 2.2°C/W thermal resistance (junction-to-case). This monolithic integration eliminates discrete diode placement and matching, reducing layout complexity and parasitic inductance in high-frequency SMPS designs using the HGT1S7N60A4DS.

What gate drive voltage is recommended for reliable operation of HGT1S7N60A4DS?

A gate-emitter voltage of 15V is recommended for normal operation of the HGT1S7N60A4DS, as confirmed by electrical specifications showing V_CE(SAT) = 1.9V typ and Q_g(ON) = 37nC at V_GE = 15V. The absolute maximum continuous gate voltage is ±20V, and pulsed voltage must not exceed ±30V. Driving below 12V risks incomplete turn-on and increased conduction loss; exceeding 20V risks oxide damage. The HGT1S7N60A4DS gate threshold voltage is 4.5–7.0V, making 15V ideal for margin and speed.

Can HGT1S7N60A4DS be used in parallel configurations, and what design considerations apply?

Yes, the HGT1S7N60A4DS supports parallel operation due to its positive temperature coefficient of V_CE(SAT) (1.6V typ at 125°C vs. 1.9V at 25°C), which promotes current sharing. Critical design considerations include matched gate drive paths (identical RG and trace length), symmetrical thermal mounting, and individual emitter resistors for dynamic balancing. The HGT1S7N60A4DS datasheet validates this behavior in Figure 13 (transfer characteristic) and notes stable operation up to 150°C junction temperature.

What is the short-circuit withstand capability of HGT1S7N60A4DS, and under what test conditions is it specified?

The HGT1S7N60A4DS has a minimum short-circuit withstand time of 10µs at T_J = 125°C, V_CE = 390V, and R_G = 25Ω, as shown in Figure 4 of its datasheet. This rating assumes clamped V_GE = 15V and defines the safe window for protection circuit response. Exceeding this time risks thermal runaway and permanent failure. The HGT1S7N60A4DS specification is validated per JEDEC standards and applies only under the stated test conditions-not at higher voltages or temperatures.

HGT1S7N60A4DS Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 34 A

Current - Collector Pulsed (Icm):: 56 A

Vce(on) (Max) @ Vge, Ic:: 2.7V @ 15V, 7A

Power - Max:: 125 W

Switching Energy:: 55µJ (on), 60µJ (off)

Input Type:: Standard

Gate Charge:: 37 nC

Td (on/off) @ 25°C:: 11ns/100ns

Test Condition:: 390V, 7A, 25Ohm, 15V

Reverse Recovery Time (trr):: 34 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

HGT1S7N60A4DS FAQ

1.How can I place an order for HGT1S7N60A4DS through Aetrix?

Please submit a Request for Quotation (RFQ) for HGT1S7N60A4DS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HGT1S7N60A4DS reliable?

The price and inventory of HGT1S7N60A4DS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HGT1S7N60A4DS is usually 5 days.

3.What payment methods are accepted for HGT1S7N60A4DS?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HGT1S7N60A4DS transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HGT1S7N60A4DS?

HGT1S7N60A4DS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HGT1S7N60A4DS order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HGT1S7N60A4DS?

For technical support, including HGT1S7N60A4DS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HGT1S7N60A4DS requirements.

6.How does Aetrix verify that HGT1S7N60A4DS is sourced from the original manufacturer or authorized distributors?

All HGT1S7N60A4DS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HGT1S7N60A4DS meets industry standards.

7.What is the process for return or replacement of HGT1S7N60A4DS?

All HGT1S7N60A4DS units undergo pre-shipment inspection (PSI). If there is an issue with HGT1S7N60A4DS, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HGT1S7N60A4DS part is unused and in its original packaging.

Return procedure for HGT1S7N60A4DS:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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