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onsemi HGTP10N120BN
- Part No.:
- HGTP10N120BN
- Manufacturer:
- onsemi
- Category:
- Single IGBTs
- Package:
- TO-220-3
- Datasheet:
-
HGTP10N120BN.pdf
- Description:
- IGBT 1200V 35A 298W TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:4,188
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Product details
Overview
HGTP10N120BN from ON Semiconductor is a Non-Punch Through (NPT) N-channel IGBT rated for 1200V collector-emitter voltage and 35A continuous collector current at TC = 25°C, with low 2.45V typical VCE(SAT) at 10A/15V and 140ns typical fall time at TJ = 150°C - deployed in high-voltage motor drives and industrial power supplies.
For engineers reviewing the HGTP10N120BN datasheet, pinout, applications, or equivalent options, key selection criteria include switching SOA (55A at 1200V), short-circuit withstand time (8µs at VGE = 15V), avalanche rating, thermal impedance (0.42°C/W), and TO-220AB package compatibility with standard heatsink mounting.
Technical Context
This IGBT uses an NPT silicon structure enabling robust 1200V blocking capability and inherent avalanche ruggedness without external snubbers. Its gate threshold voltage (6.0–6.8V) and plateau voltage (~10.4V) support stable turn-on under noisy industrial conditions.
Switching behavior is defined by measured energy losses: EON2 = 0.85–1.1mJ and EOFF = 0.8–1.0mJ at TJ = 25°C, with conduction loss minimized via low RDS(on)-equivalent VCE(SAT) and optimized carrier lifetime control for moderate-frequency operation (up to ~10kHz per Figure 3).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE(BR) DSS | 1200V - supports DC bus voltages up to 960V in 3-phase rectified systems with margin |
| IC Continuous | 35A at TC = 25°C - enables 2–3kW motor drive output with forced-air cooling |
| VCE(SAT) | 2.45V typ @ 10A/15V - reduces conduction loss vs. comparable 1200V IGBTs by ≥0.15V |
| tf | 140ns typ @ TJ = 150°C - allows reliable switching at 5–10kHz in hard-switched PFC and inverter stages |
| SSOA | 55A at 1200V - defines maximum safe single-pulse current under inductive fault conditions |
| tSC | 8µs @ VGE = 15V - provides deterministic short-circuit protection window for gate driver desaturation detection |
| RθJC | 0.42°C/W - enables direct-mount heatsink thermal design with ≤75°C case rise at full load |
Pinout & Package
Package: JEDEC TO-220AB - three-terminal through-hole package with isolated flange (collector-connected tab), suitable for manual soldering and mechanical clamping to heatsinks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (C) | Main high-side power terminal | Electrically connected to metal flange; must be insulated from heatsink unless system ground reference permits |
| Emitter (E) | Power return path and gate reference | Serves as common reference for gate drive; layout must minimize inductance to avoid shoot-through during switching |
| Gate (G) | Control input | High-impedance MOS-capacitive node requiring <10Ω series resistance and local 10–22nF gate-emitter capacitor for noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| NPT silicon structure | Enables 1200V blocking with soft reverse recovery and no tail current - simplifies snubber design |
| Avalanche-rated | Rated for 80mJ forward-biased avalanche energy - eliminates need for external clamping in inductive load switching |
| Short-circuit rated | Guaranteed 8µs withstand at VGE = 15V - enables robust overcurrent protection using standard desaturation detection circuits |
| Thermal SPICE model | Includes temperature-compensated junction-to-case thermal network - supports accurate transient thermal simulation in Saber™ |
| JEDEC TO-220AB footprint | Direct drop-in replacement for legacy 1200V IGBTs in existing PCB layouts with standard mounting hardware |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies |
|---|---|
Use Scenario: Three-phase inverter stage in 2.2–3.7kW AC servo drives operating at 4–8kHz PWM frequency. IC Role / Device Role / Timing Role: Main switching device in leg topology; handles bidirectional current flow during regeneration with controlled fall time. Use Value: Low VCE(SAT) minimizes conduction loss at partial load; 140ns fall time ensures clean commutation without excessive dv/dt-induced EMI. | Use Scenario: Output inverter stage of online double-conversion UPS delivering clean 230VAC sine wave under variable load. IC Role / Device Role / Timing Role: High-side switch in H-bridge configuration; blocks 1200V DC link during dead-time intervals. Use Value: 1200V BVCES and 55A switching SOA ensure reliability during line surges and battery-mode transients without derating. |
| Solar Inverters | Induction Heating Systems |
Use Scenario: DC-AC stage in string inverters converting 600–1000V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: Hard-switched inverter switch; operates at 10–16kHz with unidirectional current flow and freewheeling diode conduction. Use Value: Avalanche rating absorbs inductive kickback from transformer leakage inductance; low EOFF enables efficient high-frequency operation. | Use Scenario: Half-bridge resonant inverter driving 20–50kHz induction coils for metal heating in industrial furnaces. IC Role / Device Role / Timing Role: Primary switching element handling pulsed 30–50A peak currents with zero-voltage switching assistance. Use Value: Short-circuit withstand time allows safe operation during coil detuning events; TO-220AB package enables compact heatsinking in space-constrained enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STGP10NC120HD | 1200V/30A, TO-247, higher VCE(SAT) = 2.7V typ, no short-circuit rating | Limited to non-fault-critical applications; requires external avalanche protection | Select when board space allows TO-247 and system lacks desaturation protection circuitry |
| IXYS IXGN100N120B3 | 1200V/100A, TO-247, trench-gate structure, lower EOFF but higher gate charge (220nC) | Better for high-frequency (>20kHz) resonant topologies; demands stronger gate driver | Choose for higher-power systems where gate drive capability and switching loss dominate over conduction loss |
Compared with STGP10NC120HD and IXGN100N120B3, HGTP10N120BN offers balanced conduction/switching trade-off in TO-220AB, with verified short-circuit ruggedness and avalanche capability - making it optimal for cost-sensitive, medium-power industrial inverters requiring field-proven fault tolerance.
Availability
HGTP10N120BN is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and solar inverters requiring stable component supply across multi-year production cycles.
Supply support for HGTP10N120BN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor (formerly Fairchild Semiconductor) is a global semiconductor supplier specializing in power management, analog, sensor, and discrete devices for automotive, industrial, and cloud power applications.
HGTP10N120BN belongs to ON Semiconductor's legacy NPT IGBT family designed for rugged, moderate-frequency switching in industrial motor controls and power conversion systems where reliability under overload and fault conditions is critical.
FAQ
What is the maximum gate-emitter voltage rating for HGTP10N120BN?
The HGTP10N120BN has a continuous gate-emitter voltage rating of ±20V and a pulsed rating of ±30V. Exceeding ±20V continuously risks permanent oxide damage; design must include gate clamping (e.g., 18V Zener) and limit series resistance to prevent overshoot. The HGTP10N120BN datasheet specifies these limits in Absolute Maximum Ratings Table.
Does HGTP10N120BN require a negative gate turn-off voltage?
No, HGTP10N120BN does not require negative gate voltage for reliable turn-off. It is fully specified for 0V to +15V gate drive, with VGE(TH) = 6.0–6.8V and stable operation down to 0V. Negative bias is unnecessary and may increase gate driver complexity without benefit for this NPT IGBT.
Can HGTP10N120BN be used in parallel configurations?
Parallel operation of HGTP10N120BN is not recommended due to parameter spread in VCE(SAT) and switching timing. The datasheet does not specify matching tolerances or recommend gate resistor balancing techniques. For higher current, use a single higher-rated device such as HGTP20N120BN instead of paralleling HGTP10N120BN units.
What is the thermal resistance junction-to-case for HGTP10N120BN?
The thermal resistance junction-to-case (RθJC) for HGTP10N120BN is 0.42°C/W, measured under JEDEC-standard conditions. This value applies to the TO-220AB package with proper mounting torque (0.5–0.7 N·m) and thermal interface material. It enables calculation of junction temperature rise: TJ = TC + (PD × 0.42).
Is HGTP10N120BN RoHS compliant and halogen-free?
Yes, HGTP10N120BN is RoHS compliant and halogen-free per ON Semiconductor's product change notices and material declarations. The device meets EU Directive 2011/65/EU and IEC 61249-2-21:2013 standards. Full compliance documentation is available via ON Semiconductor's website under the HGTP10N120BN product page.
HGTP10N120BN Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- IGBT Type:
- NPT
- Voltage - Collector Emitter Breakdown (Max):
- 1200 V
- Current - Collector (Ic) (Max):
- 35 A
- Current - Collector Pulsed (Icm):
- 80 A
- Vce(on) (Max) @ Vge, Ic:
- 2.7V @ 15V, 10A
- Power - Max:
- 298 W
- Switching Energy:
- 320µJ (on), 800µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 100 nC
- Td (on/off) @ 25°C:
- 23ns/165ns
- Test Condition:
- 960V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
HGTP10N120BN FAQ
1.How can I place an order for HGTP10N120BN through Aetrix?
Please submit a Request for Quotation (RFQ) for HGTP10N120BN on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HGTP10N120BN reliable?
The price and inventory of HGTP10N120BN are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HGTP10N120BN is usually 5 days.
3.What payment methods are accepted for HGTP10N120BN?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HGTP10N120BN transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HGTP10N120BN?
HGTP10N120BN orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HGTP10N120BN order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HGTP10N120BN?
For technical support, including HGTP10N120BN datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HGTP10N120BN requirements.
6.How does Aetrix verify that HGTP10N120BN is sourced from the original manufacturer or authorized distributors?
All HGTP10N120BN products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HGTP10N120BN meets industry standards.
7.What is the process for return or replacement of HGTP10N120BN?
All HGTP10N120BN units undergo pre-shipment inspection (PSI). If there is an issue with HGTP10N120BN, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HGTP10N120BN part is unused and in its original packaging.
Return procedure for HGTP10N120BN:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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