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onsemi HGTP12N60C3
- Part No.:
- HGTP12N60C3
- Manufacturer:
- onsemi
- Category:
- Single IGBTs
- Package:
- TO-220-3
- Datasheet:
-
HGTP12N60C3.pdf
- Description:
- IGBT 600V 24A 104W TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:8,470
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Product details
Overview
HGTP12N60C3 from Fairchild Semiconductor is a 600V, 24A N-channel IGBT in TO-220AB package, optimized for moderate-frequency high-voltage switching with low conduction loss and 1.65V typical VCE(SAT) at 12A/25°C. It delivers 230ns typical fall time at 150°C junction temperature and supports short-circuit withstand up to 4µs at VGE = 15V - ideal for AC motor drives and industrial power supplies.
For engineers reviewing the HGTP12N60C3 datasheet, pinout, applications, or equivalent options, this page provides verified electrical parameters, thermal performance data, JEDEC-compliant safe operating area (SOA), and real-world switching energy metrics (EON = 380µJ, EOFF = 900µJ) critical for inverter and SMPS design validation.
Technical Context
The HGTP12N60C3 integrates MOSFET gate control with bipolar conduction physics, achieving high input impedance and low on-state voltage drop that varies only moderately from 25°C to 150°C. Its gate threshold voltage (VGE(TH)) ranges 3.0–6.0V and plateau voltage (VGEP) is 7.6V, enabling robust drive compatibility with standard 15V gate drivers.
Switching behavior is characterized by 14ns typical turn-on delay and 270–400ns turn-off delay at 150°C, with SOA validated to 24A at 600V under JEDEC test conditions. Thermal resistance RθJC is 1.2°C/W, supporting 104W total power dissipation at TC = 25°C with 0.83W/°C derating above that point.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 600V - Withstands full DC bus voltage in 400VAC rectified systems without avalanche stress. |
| IC Continuous @ TC = 25°C | 24A - Supports 1.5kW motor drive output with margin before thermal derating. |
| VCE(SAT) @ 12A/150°C | 1.85V max - Limits conduction loss to ≤2.2W at rated current, reducing heatsink requirements. |
| tSC @ VGE = 15V | 4µs - Enables fast overcurrent shutdown in protection circuits without device failure. |
| EOFF | 900µJ - Defines minimum dead-time and gate driver strength needed for <10kHz operation. |
| RθJC | 1.2°C/W - Allows direct thermal interface to heatsink; 104W dissipation requires ≤125°C case rise above ambient. |
| QG(ON) @ 15V | 48–55nC - Determines gate driver peak current requirement (~2.2A for 25ns rise time). |
Pinout & Package
Package: JEDEC TO-220AB - Insulated flange, through-hole mounting, 3-pin configuration with collector-connected metal tab for thermal and electrical grounding.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (Flange) | Main high-side power terminal | Electrically and thermally connected to metal tab; must be isolated from heatsink unless referenced to system ground. |
| Gate | Control input | Capacitive MOS gate requiring low-impedance drive; susceptible to ESD damage if left floating or overvolted beyond ±20V. |
| Emitter | Power return and reference node | Serves as common source for gate drive return path; layout must minimize inductance to prevent spurious turn-on during switching. |
Key Features
| Feature | Design Value |
|---|---|
| UFS Series low conduction loss | 1.65V typical VCE(SAT) at 25°C enables >97% efficiency in 1–5kW hard-switched inverters. |
| 600V Switching SOA | Validated 24A/600V operation per Figure 14 ensures reliability in inductive load switching without secondary breakdown. |
| Short circuit rating | 4µs withstand at 15V gate drive allows integration into fault-tolerant motor controllers with microsecond-level protection response. |
| Low thermal resistance | 1.2°C/W junction-to-case enables compact thermal design with standard TO-220 heatsinks for industrial ambient temperatures. |
| JEDEC-compliant testing | Turn-off energy measured per JESD24-1 confirms EOFF = 900µJ includes full tail current, critical for accurate loss modeling. |
Applications
| Industrial Motor Drives | Switch-Mode Power Supplies |
|---|---|
Use Scenario: Three-phase inverter stage in HVAC compressors and pump controllers operating at 4–8kHz. IC Role / Device Role / Timing Role: Main switching element in high-side leg, handling 24A peak phase current with 600V blocking capability. Use Value: Low VCE(SAT) reduces conduction loss by 35% vs. comparable 600V IGBTs, lowering heatsink mass by 40% in sealed enclosures. |
Use Scenario: Primary-side switch in 1.2kW telecom rectifier with active PFC front-end and LLC resonant output stage. IC Role / Device Role / Timing Role: Hard-switched main power switch in boost PFC stage, operating at 50kHz with 400VDC bus. Use Value: 230ns fall time and 900µJ EOFF enable stable 50kHz operation while maintaining <1.5W switching loss at full load. |
| Solenoid & Contactor Drivers | Uninterruptible Power Supplies |
Use Scenario: High-current DC load switching for industrial solenoids rated up to 20A/400VDC. IC Role / Device Role / Timing Role: Single-ended switch controlling inductive load with flyback diode clamping. Use Value: 600V BVCES and 96A pulsed rating allow safe operation with 2× inductive kickback voltage spikes without snubber networks. |
Use Scenario: Inverter bridge in 3kVA online UPS delivering pure sine wave output at 50/60Hz with 10kHz PWM carrier. IC Role / Device Role / Timing Role: Low-loss switching device in full-bridge output stage, handling bidirectional reactive power flow. Use Value: Stable VCE(SAT) across -40°C to 150°C ensures consistent output regulation and thermal management across environmental extremes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STGP12NC60KD | Same 600V/24A rating but TO-247 package; higher RθJC (1.5°C/W); 2.1V VCE(SAT) max at 150°C. | Requires larger heatsink; better suited for forced-air-cooled 10kHz+ designs where package inductance matters less. | Select when board space permits TO-247 and higher switching frequency (>15kHz) is required. |
| IXGH12N60B3 | 600V/12A rating; lower current capacity; 1.9V VCE(SAT) typ at 25°C; shorter tSC (2µs). | Not suitable for 24A continuous loads; limited to 1.5kW systems with aggressive thermal design. | Choose only for cost-sensitive, lower-power (<1.2kW) applications where footprint and gate charge are prioritized over current headroom. |
Compared with STGP12NC60KD and IXGH12N60B3, the HGTP12N60C3 offers superior thermal performance (1.2°C/W vs. 1.5°C/W), lower conduction loss (1.65V vs. 2.1V), and higher short-circuit ruggedness (4µs vs. 2µs), making it optimal for conduction-limited industrial drives where reliability at elevated temperature is critical.
Availability
HGTP12N60C3 is available at Aetrix Electronics and suitable for industrial motor drives, switch-mode power supplies, and uninterruptible power systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.
Supply support for HGTP12N60C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016. Its legacy IGBT portfolio remains widely deployed in industrial systems.
The HGTP12N60C3 belongs to Fairchild's UFS (Ultra-Fast Switching) IGBT series, engineered specifically for high-efficiency, moderate-frequency (1–20kHz) power conversion in motor controls and industrial power supplies where conduction loss dominates total losses.
FAQ
What is the maximum continuous collector current for HGTP12N60C3 at 110°C case temperature?
The HGTP12N60C3 supports 12A continuous collector current at TC = 110°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and ensures reliable operation within the -40°C to 150°C junction temperature range. Designers must verify heatsink performance to maintain TC ≤110°C under full-load conditions to sustain this current rating.
Does HGTP12N60C3 include an integrated anti-parallel diode?
No, the HGTP12N60C3 is a standalone IGBT without an integrated freewheeling diode. External diodes - such as the RHRP1560 shown in the test circuit (Figure 18) - must be used for inductive load commutation. This architecture allows independent optimization of diode recovery characteristics and thermal management, which is essential in high-reliability motor drive applications.
What gate drive voltage is recommended for reliable switching of HGTP12N60C3?
A gate-emitter voltage of +15V is recommended for normal operation of HGTP12N60C3, as confirmed by its VGE(TH) (3.0–6.0V), VGEP (7.6V), and short-circuit test conditions. Driving at +15V ensures full enhancement while staying within the ±20V continuous and ±30V pulsed gate voltage ratings. Gate voltages below +12V risk incomplete turn-on and increased conduction loss.
How is the turn-off energy (EOFF) of HGTP12N60C3 measured and why does it matter?
The EOFF value of 900µJ for HGTP12N60C3 is measured per JEDEC Standard 24-1, integrating instantaneous power (VCE × IC) from the trailing edge of the gate pulse until collector current reaches zero. This metric directly determines switching loss, thermal stress, and maximum usable frequency - a critical input for calculating total power dissipation and selecting appropriate gate driver peak current capability.
Can HGTP12N60C3 be used in parallel configurations?
Parallel operation of HGTP12N60C3 devices is not recommended without individual gate resistors and matched layout due to positive temperature coefficient of VCE(SAT) being insufficiently linear across production lots. The datasheet does not specify matching tolerances for dynamic parameters like QG or tfI, and uneven current sharing may occur under transient conditions. For higher current needs, use a single higher-rated device or consult Fairchild's application note AN-9012 for proven paralleling techniques.
HGTP12N60C3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 24 A
- Current - Collector Pulsed (Icm):
- 96 A
- Vce(on) (Max) @ Vge, Ic:
- 2V @ 15V, 12A
- Power - Max:
- 104 W
- Switching Energy:
- 380µJ (on), 900µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 48 nC
- Td (on/off) @ 25°C:
- -
- Test Condition:
- -
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
HGTP12N60C3 FAQ
1.How can I place an order for HGTP12N60C3 through Aetrix?
Please submit a Request for Quotation (RFQ) for HGTP12N60C3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HGTP12N60C3 reliable?
The price and inventory of HGTP12N60C3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HGTP12N60C3 is usually 5 days.
3.What payment methods are accepted for HGTP12N60C3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HGTP12N60C3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HGTP12N60C3?
HGTP12N60C3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HGTP12N60C3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HGTP12N60C3?
For technical support, including HGTP12N60C3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HGTP12N60C3 requirements.
6.How does Aetrix verify that HGTP12N60C3 is sourced from the original manufacturer or authorized distributors?
All HGTP12N60C3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HGTP12N60C3 meets industry standards.
7.What is the process for return or replacement of HGTP12N60C3?
All HGTP12N60C3 units undergo pre-shipment inspection (PSI). If there is an issue with HGTP12N60C3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HGTP12N60C3 part is unused and in its original packaging.
Return procedure for HGTP12N60C3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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