onsemi HGTP7N60B3D

Overview

HGTP7N60B3D from Fairchild Semiconductor is a 600V, 14A N-channel IGBT with integrated anti-parallel hyperfast diode in TO-220AB alternate package, designed for high-voltage switching in motor controls and industrial power supplies where low conduction loss and thermal stability are critical.

For engineers reviewing the HGTP7N60B3D datasheet, pinout, applications, or equivalent options, this device delivers verified 2.1V V_CE(SAT) at 7A/150°C, 120ns typical fall time at TJ = 150°C, short-circuit withstand of 2µs at V_GE = 15V, and R_θJC = 2.1°C/W for reliable thermal management in continuous-duty inverters.

Technical Context

The HGTP7N60B3D uses MOS-gated bipolar structure to combine high input impedance with low on-state voltage drop that varies only moderately from 25°C to 150°C. Its switching SOA supports 35A at 600V with RG = 50Ω and TJ = 150°C, enabling robust operation under transient overloads.

It integrates a co-packaged RHRD660 hyperfast diode (trr ≤ 37ns at 7A), delivering synchronized recovery behavior and minimizing tail current during commutation. Gate threshold voltage is tightly specified at 3.0–6.0V, ensuring stable turn-on control across temperature and process variation.

Key Specifications

Pinout & Package

Package: JEDEC TO-220AB (Alternate Version) - Standard through-hole mounting with insulated flange; collector connected to metal tab for direct heatsink attachment and thermal path optimization.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with STGP14NC60KD and IXGH14N60B3, the HGTP7N60B3D offers superior thermal stability (2.1V V_CE(SAT) max at 150°C), faster switching (120ns tfI), and guaranteed short-circuit withstand-making it optimal for compact, high-reliability motor drives where thermal headroom and fault robustness are design-critical.

Availability

HGTP7N60B3D is available at Aetrix Electronics and suitable for AC motor drives, industrial power supplies, and solenoid/contactors requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for HGTP7N60B3D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor (now part of ON Semiconductor) is a legacy analog and power semiconductor manufacturer known for high-reliability discrete devices and power modules used in industrial, automotive, and computing applications.

The HGTP7N60B3D belongs to Fairchild's UFS (Ultrafast Series) IGBT family, engineered specifically for moderate-frequency (10–30kHz), high-voltage switching in motor controls and industrial SMPS where conduction efficiency and ruggedness outweigh ultra-high-speed requirements.

FAQ

What is the maximum junction temperature rating for the HGTP7N60B3D?

The HGTP7N60B3D has an operating junction temperature range of –55°C to +150°C. This 150°C maximum rating enables reliable operation in sealed industrial enclosures and high-ambient environments when paired with appropriate heatsinking and derating per its 0.476W/°C power dissipation slope.

Does the HGTP7N60B3D include an integrated diode, and what are its key parameters?

Yes, the HGTP7N60B3D integrates a co-packaged RHRD660 hyperfast diode. Its key parameters include V_EC = 1.85–2.2V at 7A, reverse recovery time trr ≤ 37ns at 7A/200A/µs, and average forward current rating of 6A at T_C = 152°C - enabling efficient freewheeling without external diodes in half-bridge configurations.

What gate drive voltage is recommended for reliable operation of the HGTP7N60B3D?

The HGTP7N60B3D specifies V_GE(TH) = 3.0–6.0V and recommends V_GE = 15V for full saturation and minimum V_CE(SAT). Gate voltage must not exceed ±20V continuous or ±30V pulsed (VGEM) to avoid oxide damage; a 15V supply with active pull-down ensures robust noise immunity and fast turn-off.

How does the short-circuit withstand capability of the HGTP7N60B3D compare between 10V and 15V gate drive?

The HGTP7N60B3D provides t_SC = 12µs at V_GE = 10V and t_SC = 2µs at V_GE = 15V under identical test conditions (V_CE(PK) = 360V, T_J = 125°C, R_G = 50Ω). The trade-off reflects higher current density at 15V, requiring faster fault detection but delivering lower conduction loss during normal operation.

Is the HGTP7N60B3D pin-compatible with other TO-220AB IGBTs such as the HGT1S7N60B3DS?

No - while both HGTP7N60B3D and HGT1S7N60B3DS share identical electrical specifications and IGBT/diode functionality, they differ in package: HGTP7N60B3D uses TO-220AB (alternate), whereas HGT1S7N60B3DS uses surface-mount TO-263AB. Pinout assignment (C/E/G) is identical, but mechanical mounting, thermal path, and PCB footprint are not interchangeable.