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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

onsemi HGTP7N60C3D

Name: HGTP7N60C3D
Brand: onsemi
SKU: HGTP7N60C3D
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: HGTP7N60C3D

Manufacturer:: onsemi

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: HGTP7N60C3D.pdf

Description:: IGBT 600V 14A 60W TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

HGTP7N60C3D from Fairchild Semiconductor is a 600V, 14A N-channel IGBT in TO-220AB package with integrated anti-parallel hyperfast diode, designed for high-voltage switching in motor drives and industrial power supplies where low conduction loss and fast turn-off are critical.

For engineers reviewing the HGTP7N60C3D datasheet, pinout, applications, or equivalent options, this device offers verified 140ns fall time at 150°C, 600V blocking capability, short-circuit withstand up to 1µs at 15V gate drive, and thermal resistance of 2.1°C/W junction-to-case - key parameters for PFC, inverter, and solenoid driver design.

Technical Context

The HGTP7N60C3D uses a developmental TA49115 IGBT die paired with TA49057 hyperfast diode, enabling stable V_CE(sat) of 1.6–2.4V across −40°C to 150°C and low switching energy (E_ON = 165µJ, E_OFF = 600µJ). Its gate threshold voltage (3.0–6.0V) and plateau voltage (~8V) support robust TTL/CMOS-compatible drive.

It operates within JEDEC-standard inductive switching conditions (L = 1mH, V_CE(PK) = 480V, R_G = 50Ω), delivering 40A switching SOA at 480V and 60A at 600V (T_J = 150°C). The integrated diode exhibits t_rr = 25–37ns at 7A/200A/µs, minimizing reverse recovery losses in bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600V - Sustains full-rated DC bus voltage in 400V AC-input PFC and 3-phase inverter stages without derating.
I_C @ T_C = 25°C	14A - Continuous collector current enabling 1.5kW motor drive stage with standard heatsinking.
V_CE(sat) @ 150°C	1.9–2.4V - Low on-state voltage ensures <1.7W conduction loss at 7A, reducing thermal stress in sealed enclosures.
t_fI	140ns typical at 150°C - Enables >20kHz PWM operation in resonant converters while limiting switching loss.
t_SC @ V_GE = 15V	1µs - Provides deterministic fault-clearing window for overcurrent protection circuits in UPS and servo amplifiers.
R_θJC	2.1°C/W - Allows direct thermal interface to heatsink; enables 60W dissipation at ≤25°C case rise above ambient.
Q_G(ON) @ 15V	23–30nC - Matches standard gate drivers (e.g., IR2110, UCC27324) without requiring oversized external buffers.

Pinout & Package

Package: JEDEC TO-220AB, isolated flange (collector-connected), 3-terminal through-hole package with 2.54mm lead pitch and 4.8mm creepage distance.

Pin/Terminal	Circuit Role	Design Meaning
Collector (Flange)	Main power output terminal / heat sink interface	Electrically tied to collector; must be insulated from chassis unless system ground reference permits direct mounting.
Gate	Control input for MOS-gated IGBT structure	Capacitive input (C_ies ≈ 1.2nF @ 25V); requires low-impedance drive (<50Ω) to achieve rated 140ns fall time.
Emiter	Power return path and gate reference node	Serves as common reference for gate drive; layout must minimize inductance to prevent spurious turn-on during dV/dt transients.

Key Features

Feature	Design Value
UFS Series architecture	Combines MOSFET input impedance with bipolar conduction efficiency, enabling gate drive simplicity without sacrificing efficiency at high current.
Anti-parallel hyperfast diode	25–37ns reverse recovery time at 7A/200A/µs eliminates snubber requirements in single-phase inverter legs and reduces EMI in flyback topologies.
600V switching SOA	Rated for 40A at 480V and 60A at 600V (T_J = 150°C), supporting unregulated DC bus operation in industrial SMPS without voltage clamping.
Short-circuit ruggedness	Guaranteed 1µs withstand at V_GE = 15V enables use in fault-tolerant motor controllers without external desaturation detection circuitry.
Low V_CE(sat) temperature coefficient	V_CE(sat) increases only moderately from 25°C to 150°C (1.6V → 2.4V), simplifying current sharing in paralleled IGBT designs.

Applications

AC Motor Drives	Industrial Power Supplies
Use Scenario: Three-phase inverter stage in HVAC compressor drives operating at 16kHz PWM frequency with 400V DC bus. IC Role / Device Role / Timing Role: Main switching device in upper/lower leg of IGBT half-bridge; handles bidirectional current via integrated diode during freewheeling. Use Value: 140ns fall time and 2.4V V_CE(sat) at 150°C reduce total losses by 18% vs. legacy 600V IGBTs, enabling smaller heatsinks and higher power density.	Use Scenario: Active clamp forward converter in 1.2kW telecom rectifier with 380–400V DC input. IC Role / Device Role / Timing Role: Primary-side switch controlling energy transfer; anti-parallel diode conducts reset current during clamp phase. Use Value: Hyperfast diode t_rr < 37ns prevents reverse recovery oscillation, eliminating need for RC snubbers and improving efficiency by 1.2% at full load.
Solenoid & Contactor Drivers	Uninterruptible Power Supplies (UPS)
Use Scenario: High-side switch for 24V/12A industrial solenoids in automated valve control systems. IC Role / Device Role / Timing Role: Fast-switching power switch replacing mechanical relays; integrated diode suppresses inductive kickback. Use Value: 1µs short-circuit rating allows direct connection to 24V battery bus without current-limiting resistors, reducing BOM count and PCB area.	Use Scenario: Output inverter stage in line-interactive UPS delivering 2.2kVA with pure sine wave output. IC Role / Device Role / Timing Role: Full-bridge switching element handling 180° conduction per cycle; diode conducts reactive current during zero-crossings. Use Value: 600V V_CES and 40A SOA at 480V enable direct use with 380V AC input after rectification, avoiding intermediate DC-DC conversion stages.

AC Motor Drives

Industrial Power Supplies

Use Scenario: Three-phase inverter stage in HVAC compressor drives operating at 16kHz PWM frequency with 400V DC bus.

IC Role / Device Role / Timing Role: Main switching device in upper/lower leg of IGBT half-bridge; handles bidirectional current via integrated diode during freewheeling.

Use Value: 140ns fall time and 2.4V V_CE(sat) at 150°C reduce total losses by 18% vs. legacy 600V IGBTs, enabling smaller heatsinks and higher power density.

Use Scenario: Active clamp forward converter in 1.2kW telecom rectifier with 380–400V DC input.

IC Role / Device Role / Timing Role: Primary-side switch controlling energy transfer; anti-parallel diode conducts reset current during clamp phase.

Use Value: Hyperfast diode t_rr < 37ns prevents reverse recovery oscillation, eliminating need for RC snubbers and improving efficiency by 1.2% at full load.

Solenoid & Contactor Drivers

Uninterruptible Power Supplies (UPS)

Use Scenario: High-side switch for 24V/12A industrial solenoids in automated valve control systems.

IC Role / Device Role / Timing Role: Fast-switching power switch replacing mechanical relays; integrated diode suppresses inductive kickback.

Use Value: 1µs short-circuit rating allows direct connection to 24V battery bus without current-limiting resistors, reducing BOM count and PCB area.

Use Scenario: Output inverter stage in line-interactive UPS delivering 2.2kVA with pure sine wave output.

IC Role / Device Role / Timing Role: Full-bridge switching element handling 180° conduction per cycle; diode conducts reactive current during zero-crossings.

Use Value: 600V V_CES and 40A SOA at 480V enable direct use with 380V AC input after rectification, avoiding intermediate DC-DC conversion stages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP7NC60HD	600V/16A, 120ns t_f, R_θJC = 2.0°C/W, no integrated diode	Requires external ultrafast diode (e.g., STTH8R06D); better for discrete layout optimization but increases component count.	Select when board space allows separate diode placement and gate drive can support higher Q_G (42nC).
IXGN75N60B2	600V/75A, 100ns t_f, R_θJC = 0.35°C/W, TO-247 package, no integrated diode	Higher current rating and lower thermal resistance, but requires external diode and larger footprint; suited for >3kW systems.	Choose for scalable designs needing headroom beyond 14A, accepting larger package and added diode BOM.

Compared with STGP7NC60HD and IXGN75N60B2, the HGTP7N60C3D provides integrated hyperfast diode functionality in TO-220AB, reducing layout complexity and component count for sub-2kW applications - ideal where cost, size, and assembly simplicity outweigh raw current scalability.

Availability

HGTP7N60C3D is available at Aetrix Electronics and suitable for AC motor drives, industrial power supplies, and solenoid/contactors requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production programs.

Supply support for HGTP7N60C3D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor (now part of ON Semiconductor) is a global leader in power semiconductors, known for high-reliability discrete devices and analog ICs serving industrial, automotive, and computing markets.

The HGTP7N60C3D belongs to Fairchild's UFS (Ultra-Fast Switching) IGBT series, engineered specifically for moderate-frequency (10–50kHz), high-voltage switching applications demanding low conduction loss, fast turn-off, and integrated diode functionality.

FAQ

What is the maximum continuous collector current for HGTP7N60C3D at 110°C case temperature?

The HGTP7N60C3D supports 7A continuous collector current at T_C = 110°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and ensures reliable operation under sustained load in enclosed industrial environments. Designers must verify heatsink performance to maintain T_C ≤ 110°C for full 7A capability.

Does HGTP7N60C3D include an integrated diode, and what are its key recovery characteristics?

Yes, the HGTP7N60C3D integrates a hyperfast anti-parallel diode (developmental type TA49057) with reverse recovery time (t_rr) of 25–37ns at 7A and 200A/µs di/dt. This enables clean commutation in bridge circuits without external snubbers and reduces EMI generation compared to standard FRDs. The diode's V_EC is 1.9–2.5V at 7A, matching the IGBT's thermal profile.

What gate drive voltage is required to achieve the rated 140ns fall time for HGTP7N60C3D?

The 140ns typical fall time (t_fI) for HGTP7N60C3D is measured at T_J = 150°C with V_GE = 15V, R_G = 50Ω, and L = 1mH. To consistently achieve this performance, the gate driver must deliver ≥15V with peak current ≥0.3A (based on Q_G = 23–30nC and t_fI target), and maintain low-inductance layout between driver output and HGTP7N60C3D gate/emitter pins.

Can HGTP7N60C3D be used in parallel configurations, and what design considerations apply?

Yes, the HGTP7N60C3D supports paralleling due to its positive V_CE(sat) temperature coefficient - V_CE(sat) rises from 1.6V at 25°C to 2.4V at 150°C, promoting natural current sharing. Successful implementation requires matched gate drive impedance, symmetrical PCB layout, and individual emitter resistors (0.1–0.22Ω) for dynamic balancing. Thermal coupling between devices must also be minimized.

What is the short-circuit withstand capability of HGTP7N60C3D, and how does it vary with gate voltage?

The HGTP7N60C3D provides 1µs short-circuit withstand time at V_GE = 15V and 8µs at V_GE = 10V (T_J = 125°C, V_CE = 360V). This inverse relationship reflects reduced channel conductivity at lower gate voltage, extending safe fault duration. For robust protection, designers should implement desaturation detection with <500ns response time to disable HGTP7N60C3D before t_SC expires.

HGTP7N60C3D Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 14 A

Current - Collector Pulsed (Icm):: 56 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 7A

Power - Max:: 60 W

Switching Energy:: 165µJ (on), 600µJ (off)

Input Type:: Standard

Gate Charge:: 23 nC

Td (on/off) @ 25°C:: -

Test Condition:: 480V, 7A, 50Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

HGTP7N60C3D FAQ

1.How can I place an order for HGTP7N60C3D through Aetrix?

Please submit a Request for Quotation (RFQ) for HGTP7N60C3D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HGTP7N60C3D reliable?

The price and inventory of HGTP7N60C3D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HGTP7N60C3D is usually 5 days.

3.What payment methods are accepted for HGTP7N60C3D?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HGTP7N60C3D transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HGTP7N60C3D?

HGTP7N60C3D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HGTP7N60C3D order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HGTP7N60C3D?

For technical support, including HGTP7N60C3D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HGTP7N60C3D requirements.

6.How does Aetrix verify that HGTP7N60C3D is sourced from the original manufacturer or authorized distributors?

All HGTP7N60C3D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HGTP7N60C3D meets industry standards.

7.What is the process for return or replacement of HGTP7N60C3D?

All HGTP7N60C3D units undergo pre-shipment inspection (PSI). If there is an issue with HGTP7N60C3D, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HGTP7N60C3D part is unused and in its original packaging.

Return procedure for HGTP7N60C3D:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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