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Renesas HIP2103FBZ-T7A
- Part No.:
- HIP2103FBZ-T7A
- Manufacturer:
- Renesas
- Category:
- Full Half-Bridge (H Bridge) Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
HIP2103FBZ-T7A.pdf
- Description:
- IC HALF BRIDGE DRVR 150MA 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,725
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Product details
Overview
HIP2103FBZ-T7A from Renesas Electronics is a 60V, 1A/2A peak half-bridge gate driver IC designed for DC motor, BLDC motor, and switch-mode power applications. It features independent HI/LI inputs, 4V undervoltage lockout (UVLO), integrated bootstrap FET, and 5µA sleep mode quiescent current. The device operates from 4.5V to 14V VDD supply and drives N-channel MOSFETs in high-side/low-side configurations.
For engineers reviewing the HIP2103FBZ-T7A datasheet, HIP2103FBZ-T7A pinout, HIP2103FBZ-T7A application, or HIP2103FBZ-T7A equivalent, key selection criteria include its SOIC-8 package, UVLO threshold of 4.0V, 27ns LO turn-off propagation delay at 12V, integrated input pull-down resistors, and sleep mode activation via simultaneous HI/LI high logic.
Technical Context
The HIP2103FBZ-T7A implements non-inverting logic with independent HI and LI inputs controlling HO and LO outputs respectively. Internal shoot-through prevention logic forces both outputs low when HI and LI are simultaneously high, and initiates sleep mode after ≥20µs of concurrent high state. The integrated bootstrap FET replaces external diodes and charges the HB–HS capacitor to ~VDD during low-side conduction.
Sleep mode disables HO (high-impedance, 2MΩ to HS) and actively pulls LO low via 100Ω resistor to prevent unintended bridge conduction. UVLO asserts at 4.2V falling threshold with 0.34V hysteresis, forcing HO/LO low while preserving internal bias integrity. No LDOs are present-unlike HIP2104, this variant lacks VCC/VDD regulators.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Max Bootstrap Voltage | 60V - supports high-voltage bridge topologies up to 50V continuous HS node voltage |
| VDD UVLO Threshold | 4.2V (falling) - ensures reliable gate drive shutdown before MOSFET gate underdrive occurs |
| Sleep Mode Current | 9.4µA typical - minimizes battery drain in standby without external disconnect switches |
| LO Turn-Off Delay | 27ns at VDD=12V - enables precise timing control in high-frequency motor commutation |
| HO Sourcing rDS(ON) | 6.47Ω max - delivers sufficient peak current to charge 1nF gate capacitance in ≤35ns |
| Input Hysteresis | 0.62V at VDD=12V - rejects noise on microcontroller GPIO lines driving HI/LI |
| Package Thermal RθJA | 105°C/W (SOIC-8) - requires PCB copper pour for >0.95W continuous dissipation |
Pinout & Package
HIP2103FBZ-T7A uses an 8-lead SOIC package (RoHS-compliant, M8.15 drawing) with exposed pad connected to VSS for thermal management.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD | Driver supply input | 4.5–14V bias source for internal logic and gate drivers; powers bootstrap FET |
| HI | High-side input | 3.3V/5V CMOS-compatible signal with 100kΩ internal pull-down; non-inverting control of HO |
| LI | Low-side input | 3.3V/5V CMOS-compatible signal with 100kΩ internal pull-down; non-inverting control of LO |
| VSS | Signal ground reference | Return path for logic, gate drive, and bootstrap circuits; must be low-impedance |
| HB | High-side bootstrap supply | Connects to boot capacitor positive terminal; referenced to HS, not ground |
| HO | High-side gate output | Drives upper N-MOSFET gate; high-impedance in sleep mode (2MΩ to HS) |
| HS | High-side source connection | Connects to source of high-side MOSFET; forms bootstrap capacitor return path |
| LO | Low-side gate output | Drives lower N-MOSFET gate; actively pulled low (100Ω) in sleep mode |
Key Features
| Feature | Design Value |
|---|---|
| Integrated bootstrap FET | Replaces external bootstrap diode, reducing BOM count and improving reliability in high-dV/dt environments |
| Independent HI/LI control | Enables flexible PWM schemes including synchronous rectification and three-phase commutation without external logic |
| Shoot-through prevention logic | Forces HO/LO low when HI and LI are simultaneously asserted, eliminating risk of cross-conduction during fault conditions |
| Active LO pull-down in sleep | 100Ω resistor holds low-side FET off during sleep, preventing shoot-through from HS node transients |
| Input pull-down resistors | 100kΩ on HI/LI eliminates need for external biasing components in microcontroller interface |
Applications
| Brushless DC Motor Drive | Half-Bridge DC Motor Control |
|---|---|
Use Scenario: Driving 3-phase BLDC motors in HVAC blowers and power tools using trapezoidal commutation. IC Role / Device Role / Timing Role: HIP2103FBZ-T7A provides isolated high-side/low-side gate drive per phase leg with precise dead-time control. Use Value: 27ns LO turn-off delay and 23ns HO turn-off delay enable <100ns minimum dead time, supporting 100kHz+ switching frequencies. | Use Scenario: Controlling bidirectional brushed DC motors in automotive seat adjusters and industrial actuators. IC Role / Device Role / Timing Role: HIP2103FBZ-T7A acts as dual gate driver enabling forward/reverse operation via HI/LI polarity inversion. Use Value: 5µA sleep current eliminates battery drain in parked vehicles; integrated pull-downs simplify MCU GPIO usage. |
| UPS Inverter Stage | Class-D Audio Amplifier |
Use Scenario: Half-bridge switching in offline UPS inverters converting 360V DC bus to 120V/230V AC output. IC Role / Device Role / Timing Role: HIP2103FBZ-T7A drives high-voltage Si MOSFETs in the output H-bridge stage with 60V bootstrap rating. Use Value: 60V max bootstrap voltage supports 50V continuous HS node swing, enabling direct use with 48V–60V DC bus designs. | Use Scenario: Output stage driver in high-efficiency Class-D audio amplifiers for consumer and professional audio systems. IC Role / Device Role / Timing Role: HIP2103FBZ-T7A delivers fast, matched rise/fall times (21ns/16ns HO) for low THD+N performance. Use Value: 1A/2A peak output current and <35ns propagation delays minimize switching losses and EMI generation at 300–500kHz carrier frequencies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IR2104PbF | 400V max bootstrap voltage; no integrated bootstrap FET; 100ns propagation delay; SOIC-8 package | Requires external bootstrap diode; higher propagation delay limits max switching frequency | Select when operating above 60V bridge voltage or requiring higher voltage isolation |
| LM5109BMAX/NOPB | 100V max bootstrap; 50ns propagation delay; no sleep mode; 8-pin SOIC | Lacks sleep mode and input pull-downs; higher quiescent current (200µA) | Select when ultra-high bootstrap voltage tolerance is required and low-power standby is not critical |
Compared with IR2104PbF and LM5109BMAX/NOPB, HIP2103FBZ-T7A offers superior low-power operation (9.4µA sleep), integrated bootstrap FET, and tighter propagation matching-making it optimal for battery-powered BLDC and compact inverter designs where efficiency and component count matter.
Availability
HIP2103FBZ-T7A is available at Aetrix Electronics and suitable for half-bridge motor drives, UPS inverters, and Class-D amplifier designs requiring stable component supply, RoHS compliance, and SOIC-8 footprint compatibility.
Supply support for HIP2103FBZ-T7A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT markets.
HIP2103FBZ-T7A belongs to Renesas' high-voltage gate driver product line, engineered specifically for efficient, robust, and low-component-count motor control and power conversion systems.
FAQ
What is the UVLO threshold of HIP2103FBZ-T7A and how does it affect system startup?
The HIP2103FBZ-T7A has a VDD undervoltage lockout (UVLO) falling threshold of 4.2V with 0.34V hysteresis. When VDD drops below 4.2V, HO and LO outputs are forced low to prevent partial gate drive that could cause MOSFET overheating. This ensures safe startup only when sufficient supply voltage is present. The hysteresis prevents oscillation near the threshold. HIP2103FBZ-T7A resumes normal operation once VDD rises above 4.54V.
Does HIP2103FBZ-T7A include built-in linear regulators like the HIP2104?
No, HIP2103FBZ-T7A does not include any linear regulators. Unlike the HIP2104-which integrates 3.3V and 12V LDOs with dedicated enable pins-the HIP2103FBZ-T7A is a pure gate driver requiring external bias supplies. All VDD current must be sourced externally, and no VCC or VCen/VDen pins exist on HIP2103FBZ-T7A. This simplifies design where regulators are already present but reduces integration compared to HIP2104.
How does the sleep mode function in HIP2103FBZ-T7A and what triggers it?
HIP2103FBZ-T7A enters sleep mode when both HI and LI inputs are held high for ≥20µs. In sleep mode, HO becomes high-impedance (2MΩ to HS), and LO is actively pulled low via a 100Ω internal resistor. This reduces quiescent current to 9.4µA typical, preventing battery drain. Sleep mode exits when LI transitions low while HI remains high for ≥20µs. The feature is implemented entirely internally-no external components or configuration are needed. HIP2103FBZ-T7A maintains this behavior across its full -40°C to +125°C operating range.
Can HIP2103FBZ-T7A drive both N-channel and P-channel high-side MOSFETs?
HIP2103FBZ-T7A is optimized for N-channel high-side MOSFETs using bootstrap operation. It cannot directly drive P-channel high-side devices because its HO output is referenced to HS-not ground-and lacks a negative voltage rail or charge pump for P-MOS gate pull-down. The bootstrap architecture requires the high-side source (HS) to periodically return near ground potential to recharge the HB–HS capacitor. While discrete level-shifting circuits could adapt it for P-MOS, HIP2103FBZ-T7A's design intent and validation are strictly for N-channel high-side configurations.
What is the maximum recommended switching frequency when using HIP2103FBZ-T7A with a 1nF gate load?
With a 1nF capacitive load, HIP2103FBZ-T7A achieves 21ns HO rise time and 16ns fall time at VDD = 12V. Accounting for propagation delays (23ns HO turn-on, 27ns LO turn-off) and required dead time (>100ns for safety margin), the practical maximum switching frequency is ~300kHz for hard-switched topologies. At 20kHz (motor drive), total gate drive energy per cycle is minimal, allowing efficient operation even with higher gate charges. HIP2103FBZ-T7A's 1A/2A peak output current ensures robust drive into typical MOSFET gate charges (Qg ≈ 20–50nC) without external buffers.
HIP2103FBZ-T7A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Output Configuration:
- Half Bridge
- Applications:
- DC Motors, General Purpose
- Interface:
- -
- Load Type:
- Inductive, Capacitive, Resistive
- Technology:
- NMOS
- Rds On (Typ):
- 2.3Ohm LS, 2.3Ohm HS
- Current - Output / Channel:
- 150mA
- Current - Peak Output:
- 2A
- Voltage - Supply:
- 4.5V ~ 14V
- Voltage - Load:
- 4.5V ~ 60V
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Features:
- -
- Fault Protection:
- Current Limiting, Shoot Through, UVLO
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
HIP2103FBZ-T7A FAQ
1.How can I place an order for HIP2103FBZ-T7A through Aetrix?
Please submit a Request for Quotation (RFQ) for HIP2103FBZ-T7A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HIP2103FBZ-T7A reliable?
The price and inventory of HIP2103FBZ-T7A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HIP2103FBZ-T7A is usually 5 days.
3.What payment methods are accepted for HIP2103FBZ-T7A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HIP2103FBZ-T7A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HIP2103FBZ-T7A?
HIP2103FBZ-T7A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HIP2103FBZ-T7A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HIP2103FBZ-T7A?
For technical support, including HIP2103FBZ-T7A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HIP2103FBZ-T7A requirements.
6.How does Aetrix verify that HIP2103FBZ-T7A is sourced from the original manufacturer or authorized distributors?
All HIP2103FBZ-T7A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HIP2103FBZ-T7A meets industry standards.
7.What is the process for return or replacement of HIP2103FBZ-T7A?
All HIP2103FBZ-T7A units undergo pre-shipment inspection (PSI). If there is an issue with HIP2103FBZ-T7A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HIP2103FBZ-T7A part is unused and in its original packaging.
Return procedure for HIP2103FBZ-T7A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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