Renesas HIP4080AIBZT

Overview

HIP4080AIBZT from Renesas Electronics is a high-frequency, 80V/2.5A peak full-bridge N-channel FET driver IC in 20-lead SOIC package. It integrates input comparator, user-programmable dead time (via HDEL/LDEL resistors), charge-pump and bootstrap biasing for high-side gate drive, and features 55ns typical propagation delay. It enables precise control of voice coil motors, switching power amplifiers, and medium-voltage brush DC motors.

For engineers reviewing the HIP4080AIBZT datasheet, HIP4080AIBZT pinout, HIP4080AIBZT application, or HIP4080AIBZT equivalent, key selection criteria include its 80V high-side capability, adjustable dead-time configuration, 1MHz switching support, undervoltage lockout (UVLO: 8.1–9.4V), and compatibility with 5V–15V logic inputs.

Technical Context

The HIP4080AIBZT implements a dual half-bridge architecture with independent A- and B-leg drivers, each comprising high-side (AHO/BHO) and low-side (ALO/BLO) outputs referenced to floating sources (AHS/BHS, ALS/BLS). Its internal comparator compares IN+ and IN− to generate complementary PWM outputs, while HEN forces high-side outputs low and DIS overrides all inputs to pull all four gates low.

Dead time is programmable via external resistors on HDEL and LDEL pins (reference voltage ~5.1V), enabling shoot-through prevention without fixed timing constraints. Bootstrap supplies (AHB/BHB) are maintained by internal charge pumps clamped at ~12.8V, supporting up to 80V bus operation with 95V max bootstrap voltage rating.

Key Specifications

Pinout & Package

Package: 20-lead SOIC (M20.3), RoHS-compliant, body dimensions 10.65 × 7.60 mm, 1.27 mm pitch, 2.65 mm max height.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar full-bridge gate driver applications.

Compared with IR2104PBF and LM5109BMAX, the HIP4080AIBZT uniquely combines full-bridge integration, comparator-based hysteresis/PWM modes, independent dead-time tuning, and 80V bus capability-making it optimal for precision motor and amplifier control where timing fidelity and topology simplicity are critical.

Availability

HIP4080AIBZT is available at Aetrix Electronics and suitable for voice coil motor actuation, full-bridge power supplies, and switching power amplifiers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for HIP4080AIBZT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power management, and timing solutions for industrial, automotive, and infrastructure markets.

The HIP4080A product line delivers high-frequency, high-voltage full-bridge gate drivers designed specifically for precision motor control, audio amplification, and high-efficiency power conversion where timing accuracy and shoot-through immunity are essential.

FAQ

What is the maximum bus voltage supported by the HIP4080AIBZT?

The HIP4080AIBZT supports a maximum high-side voltage of 80VDC on AHS and BHS pins across the full operating temperature range (−40°C to +125°C junction). Its bootstrap supply is rated to 95VDC, enabling robust gate drive headroom for N-MOSFETs in high-bus applications such as 48V industrial motor drives and Class-D amplifiers. This rating is confirmed in the Absolute Maximum Ratings table on page 4 of FN3658 Rev.8.00.

How does the HIP4080AIBZT implement dead-time control?

The HIP4080AIBZT uses two dedicated pins-HDEL and LDEL-to set independent dead times for high-side and low-side turn-on via external resistors to VSS. Each pin has an internal ~5.1V reference, generating a timing current that controls the delay before respective driver activation. This allows asymmetric dead-time tuning per half-bridge leg to prevent shoot-through while minimizing distortion-a feature not found in fixed-dead-time drivers like the LM5109BMAX. The relationship between resistance and dead time is shown in Figure 32 of the datasheet.

Can the HIP4080AIBZT drive both high-side and low-side N-channel MOSFETs without external level shifters?

Yes-the HIP4080AIBZT integrates charge-pump and bootstrap circuitry to generate floating high-side gate drive voltages up to ~12.8V above AHS/BHS, enabling direct drive of N-channel MOSFETs in both positions. External bootstrap diodes and capacitors are required per leg (AHB/AHS and BHB/BHS), but no isolated supplies or level-shifting ICs are needed. This architecture is explicitly described in the Pin Descriptions (page 7) and Functional Block Diagram (page 2) of FN3658 Rev.8.00.

What is the purpose of the HEN pin on the HIP4080AIBZT?

The HEN (High-side Enable) pin on the HIP4080AIBZT provides hardware-level override of the high-side outputs (AHO and BHO). When pulled low, HEN forces AHO and BHO to low state regardless of IN+/IN− comparator inputs-effectively disabling high-side conduction while preserving low-side control. This enables safe freewheeling or braking modes in motor applications and is distinct from the global DIS pin, which disables all four outputs. Its function is defined in the Pin Descriptions (page 7) and Truth Table (page 6).

Does the HIP4080AIBZT include built-in protection features?

Yes-the HIP4080AIBZT includes undervoltage lockout (UVLO) with rising threshold of 8.1–9.4V and falling threshold of 7.6–9.0V, plus 0.25–0.65V hysteresis to prevent oscillation during brown-out. It also features internal clamping on AHB/BHB pins (~12.8V) and leakage current limits (<1µA at 80V) for high-side bias integrity. These protections are specified in the Electrical Specifications (pages 4–5) and Absolute Maximum Ratings (page 4) of FN3658 Rev.8.00.