Infineon Technologies IGA30N60H3XKSA1

Overview

IGA30N60H3XKSA1 from Infineon is a 600 V, 30 A high-speed IGBT using Trench and Fieldstop technology, optimized for industrial power conversion with low turn-off energy (0.44 mJ), low V_CE(sat) (1.95 V at 25°C), and 175°C maximum junction temperature. It serves as the main switching device in high-frequency DC-DC converters, UPS inverters, and welding power stages.

For engineers reviewing the IGA30N60H3XKSA1 datasheet, IGA30N60H3XKSA1 pinout, IGA30N60H3XKSA1 application, or IGA30N60H3XKSA1 equivalent, key selection criteria include switching energy (E_off = 0.44 mJ), thermal resistance (R_th(j-c) = 3.50 K/W), gate charge (Q_G = 165 nC), short-circuit withstand time (5 µs), and TO-220-3 FP package compatibility.

Technical Context

This third-generation High Speed Switching Series IGBT employs TRENCHSTOP™ architecture to simultaneously reduce conduction loss (V_CE(sat) = 1.95 V) and switching loss (E_off = 0.44 mJ at 25°C). Its field-stop structure enables stable operation up to 175°C junction temperature while maintaining tight parameter distribution across temperature.

The device integrates a co-packaged ultrafast diode (IKW30N60H3) with matched thermal characteristics, enabling clean commutation in hard-switched topologies. Gate drive requirements are defined by Q_G = 165 nC and V_GE(th) = 4.1–5.7 V, supporting standard ±15 V gate drivers with 10.5 Ω external gate resistor for balanced speed/loss trade-offs.

Key Specifications

Pinout & Package

IGA30N60H3XKSA1 is housed in PG-TO220-3 FP (Full-Pak) package: insulated plastic case with metal tab for direct heatsink mounting, no isolation washer required. Pin 1 = Gate (G), Pin 2 = Collector (C), Pin 3 = Emitter (E).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Compared with IGA30N60H3XKSA1, IKW30N60H3 offers superior thermal performance in larger packages, while FGA30N60UFT trades off speed and ruggedness for cost-making the original optimal for compact, high-reliability 20–50 kHz industrial converters.

Availability

IGA30N60H3XKSA1 is available at Aetrix Electronics and suitable for uninterruptible power supplies, industrial welding converters, and high-frequency DC-DC converters requiring stable component supply, long-term lifecycle assurance, and JEDEC-qualified reliability.

Supply support for IGA30N60H3XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This IGBT belongs to Infineon's High Speed Switching Series third generation, engineered specifically for industrial power conversion systems demanding low-loss, high-temperature operation, and robust short-circuit tolerance.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies r_G = 10.5 Ω for characterization, yielding t_d(off) = 207 ns and E_off = 0.44 mJ at 25°C. Increasing r_G beyond 22 Ω raises t_d(off) nonlinearly and risks cross-conduction in bridge configurations; values below 5 Ω require gate driver capable of >20 A peak current to avoid overshoot.

Does IGA30N60H3XKSA1 include an integrated anti-parallel diode?

No-it is a discrete IGBT die in TO-220-3 FP package. However, Infineon recommends pairing it with the co-designed IKW30N60H3 ultrafast diode (same series, matched thermal behavior) for inductive load commutation; the diode is not internally bonded but is functionally and thermally optimized for this IGBT.

Can this IGBT operate continuously at 30 A collector current?

No-30 A is the rated DC collector current at T_C = 25°C. At practical case temperatures (e.g., 80°C), the continuous current rating drops to 12.5 A per Figure 4. For 30 A RMS operation, forced-air cooling or active heatsinking maintaining T_C ≤ 45°C is required.

Is the TO-220-3 FP package electrically insulated?

Yes-the PG-TO220-3 FP variant features a fully insulated plastic housing with electrically isolated metal tab. The collector (Pin 2) connects directly to the tab, but no external insulator is needed between tab and heatsink, simplifying mechanical assembly and improving thermal transfer versus standard TO-220.