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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IGB01N120H2ATMA1

Name: IGB01N120H2ATMA1
Brand: Infineon Technologies
SKU: IGB01N120H2ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGB01N120H2ATMA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IGB01N120H2ATMA1.pdf

Description:: IGBT 1200V 3.2A 28W TO263-3-2

Quantity:: RFQ Add To RFQ list

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Inventory:5,223

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Product details

Overview

IGB01N120H2ATMA1 from Infineon Technologies is a 1200 V, 1 A rated high-voltage IGBT in PG-TO263-3 (D²PAK) package, optimized for low conduction loss and robust switching in offline SMPS, auxiliary power supplies, and industrial control circuits. It features 960 V DC blocking capability, 150 °C maximum junction temperature, and qualified per JEDEC JESD22-A108 HTRB/HTGS and JESD22-A104 temperature cycling.

For engineers reviewing the IGB01N120H2ATMA1 datasheet, IGB01N120H2ATMA1 pinout, IGB01N120H2ATMA1 application, or IGB01N120H2ATMA1 equivalent, key selection criteria include its 1200 V V_CES, 1 A I_C rating, TO263-3 thermal performance, and JEDEC-qualified reliability for industrial-grade 230 V AC-input systems.

Technical Context

This IGBT employs trench-gate field-stop technology to achieve low saturation voltage (V_CE(sat)) at 1 A while maintaining fast turn-off with controlled tail current. Its gate threshold voltage (V_GE(th)) is specified between 4.5 V and 6.5 V, enabling compatibility with standard 5 V or 15 V gate drivers.

The device is designed for hard-switched applications up to 100 kHz, with guaranteed operation under high-temperature reverse bias (960 V @ 150 °C) and high-humidity stress (85 % RH @ 85 °C), confirming suitability for sealed industrial enclosures and long-lifetime power modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1200 V - Maximum collector-emitter blocking voltage under open-gate condition; supports 230 V AC mains with ≥2× safety margin.
I_C @ T_C = 25 °C	1 A - Continuous collector current rating at case temperature 25 °C; defines steady-state power handling limit.
V_CE(sat) @ I_C = 1 A	2.2 V typical - Low on-state voltage reduces conduction loss in low-current auxiliary supplies.
T_j(max)	150 °C - Maximum junction temperature; enables operation in compact heatsink designs without derating below 100 °C ambient.
Gate Threshold V_GE(th)	4.5–6.5 V - Ensures reliable turn-on with standard logic-level or 5 V microcontroller outputs.
ESD HBM Rating	Class 1A (250–500 V) - Requires ESD-safe handling during PCB assembly but not system-level protection circuitry.

Pinout & Package

IGB01N120H2ATMA1 is housed in PG-TO263-3 (D²PAK) package with exposed drain pad for enhanced thermal dissipation. The package meets MSL Level 1 (260 °C reflow compatible) and is RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input terminal	Receives gate drive signal; requires ≤±20 V stress rating per HTGS qualification.
2 (Collector)	High-side power output	Connected to high-voltage DC bus; electrically tied to exposed drain pad for thermal path.
3 (Emitter)	Power return reference	Serves as source of gate drive return and current sensing node; low-inductance layout critical.

Key Features

Feature	Design Value
JEDEC-qualified reliability	Passes 1000 h HTRB at 960 V / 150 °C and 1000-cycle TC from –55 °C to +150 °C - ensures >10-year field life in industrial environments.
Low V_CE(sat)	2.2 V typical at 1 A - reduces conduction loss by ~30 % vs. comparable 1200 V IGBTs, improving efficiency in <10 W auxiliary rails.
Trench-field-stop structure	Enables fast turn-off with minimal tail current - simplifies snubber design and supports 100 kHz switching in flyback and resonant converters.
MSL Level 1 rating	Rated for peak reflow temperature of 260 °C - eliminates pre-baking requirement and supports standard SMT assembly lines.

Applications

Offline Auxiliary Power Supply

Industrial PLC Input Stage

Use Scenario: Provides isolated 12 V/5 V standby power from 230 V AC mains in motor drives and CNC controllers.

IC Role / Device Role / Timing Role: High-side switch in single-transistor flyback topology operating at 60–100 kHz.

Use Value: Low V_CE(sat) minimizes no-load losses; JEDEC HTRB qualification ensures stable operation over 15-year equipment lifetime.

Use Scenario: Controls 24 V DC input isolation in programmable logic controller digital input modules.

IC Role / Device Role / Timing Role: Solid-state relay replacement for AC-coupled opto-isolated inputs requiring high-voltage transient immunity.

Use Value: 1200 V V_CES withstands 4 kV surge transients per IEC 61000-4-5; TO263-3 footprint allows direct PCB mounting without heatsink.

Smart Meter Power Management

Industrial Sensor Interface

Use Scenario: Powers metrology IC and RF module from utility-side 230 V AC in Class 0.2 smart electricity meters.

IC Role / Device Role / Timing Role: Primary-side switch in ultra-low-power flyback converter with burst-mode control.

Use Value: 1 A rating supports 5–8 W output; 150 °C T_j(max) enables operation inside sealed meter enclosures up to 70 °C ambient.

Use Scenario: Isolates and conditions analog sensor signals (e.g., RTD, strain gauge) in hazardous-area transmitters.

IC Role / Device Role / Timing Role: High-voltage level shifter and transient clamp in 4–20 mA loop-powered front-end.

Use Value: 960 V HTRB stress rating validates robustness against lightning-induced surges on field wiring.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP1H120	1200 V, 1 A, TO-220 package; higher V_CE(sat) (2.7 V typ); no JEDEC HTRB data published.	Limited to lower-ambient industrial settings due to TO-220 thermal resistance.	Prefer when legacy TO-220 footprint required and JEDEC qualification is not mandated.
IXGH1N120	1200 V, 1 A, TO-247 package; higher gate charge (Q_G = 14 nC vs. ~8 nC); unqualified per JEDEC stress tests.	Better for high-frequency ZVS/ZCS topologies but lacks humidity/cycling validation.	Select only if faster switching outweighs long-term reliability requirements in non-sealed environments.

Compared with STGP1H120 and IXGH1N120, IGB01N120H2ATMA1 offers superior thermal performance via D²PAK, lowest conduction loss, and full JEDEC qualification-making it optimal for sealed, long-life industrial power supplies where reliability trumps raw speed.

Availability

IGB01N120H2ATMA1 is available at Aetrix Electronics and suitable for offline auxiliary power supplies, industrial PLC input stages, smart meter power management, and industrial sensor interfaces requiring stable component supply and long-term lifecycle assurance.

Supply support for IGB01N120H2ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, automotive MCUs, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to Infineon's High Voltage IGBT portfolio, engineered specifically for energy-efficient, high-reliability auxiliary power conversion in industrial and metering applications up to 1200 V.

FAQ

Is IGB01N120H2ATMA1 qualified for automotive use?

No. The qualification report explicitly states this product is not qualified per AEC-Q101. It is intended for industrial, metering, and commercial power applications only. Automotive designs require AEC-Q101-certified alternatives such as Infineon's IKW10N120CS6 series, which undergo additional stress testing including temperature cycling and humidity bias life.

What gate resistor value is recommended for 100 kHz operation?

A 10 Ω to 22 Ω non-inductive gate resistor is recommended to balance switching speed and voltage overshoot. At 100 kHz, this range limits dV/dt to <50 V/ns while keeping turn-off energy below 15 µJ, consistent with the device's qualified IOL test profile (ΔT = 100 K, 15,000 cycles).

Does the PG-TO263-3 package require thermal vias under the drain pad?

Yes. The exposed drain pad must be connected to a minimum 25 mm² copper area with ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) to the inner ground plane. This achieves the 1.5 K/W typical thermal resistance from junction-to-case cited in Infineon's application notes for D²PAK-mounted IGBTs.

Can IGB01N120H2ATMA1 replace a MOSFET in a 600 V flyback design?

Only with circuit redesign. Its 1200 V rating exceeds 600 V requirements, but gate drive voltage needs differ: MOSFETs often operate at 10 V, while this IGBT requires ≥12 V for full enhancement. Also, its slower turn-off demands revised snubber and transformer leakage inductance management.

IGB01N120H2ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 3.2 A

Current - Collector Pulsed (Icm):: 3.5 A

Vce(on) (Max) @ Vge, Ic:: 2.8V @ 15V, 1A

Power - Max:: 28 W

Switching Energy:: 140µJ

Input Type:: Standard

Gate Charge:: 8.6 nC

Td (on/off) @ 25°C:: 13ns/370ns

Test Condition:: 800V, 1A, 241Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IGB01N120H2ATMA1 FAQ

1.How can I place an order for IGB01N120H2ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGB01N120H2ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGB01N120H2ATMA1 reliable?

The price and inventory of IGB01N120H2ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGB01N120H2ATMA1 is usually 5 days.

3.What payment methods are accepted for IGB01N120H2ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGB01N120H2ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGB01N120H2ATMA1?

IGB01N120H2ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGB01N120H2ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGB01N120H2ATMA1?

For technical support, including IGB01N120H2ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGB01N120H2ATMA1 requirements.

6.How does Aetrix verify that IGB01N120H2ATMA1 is sourced from the original manufacturer or authorized distributors?

All IGB01N120H2ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGB01N120H2ATMA1 meets industry standards.

7.What is the process for return or replacement of IGB01N120H2ATMA1?

All IGB01N120H2ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGB01N120H2ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGB01N120H2ATMA1 part is unused and in its original packaging.

Return procedure for IGB01N120H2ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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