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Infineon Technologies IGB15N65S5ATMA1
- Part No.:
- IGB15N65S5ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IGB15N65S5ATMA1.pdf
- Description:
- IGBT TRENCH FS 650V 35A TO263-3
- Quantity:
- Payment:
- Shipping:
Inventory:990
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Product details
Overview
IGB15N65S5ATMA1 from Infineon is a 650 V, 15 A TRENCHSTOP™ 5 high-speed soft-switching IGBT in PG-TO263-3 package, optimized for hard and soft switching in solar inverters and industrial SMPS. It delivers 1.35 V VCE(sat) at 25°C, 175°C maximum junction temperature, and low 38 nC gate charge for reduced switching losses.
For engineers reviewing the IGB15N65S5ATMA1 datasheet, IGB15N65S5ATMA1 pinout, IGB15N65S5ATMA1 application, or IGB15N65S5ATMA1 equivalent, key selection criteria include VCE(sat) stability over temperature, turn-off energy (0.14 mJ at 25°C), thermal resistance (1.40 K/W j-c), and compatibility with standard gate drivers in 400–520 V DC-link topologies.
Technical Context
This IGBT employs fifth-generation TRENCHSTOP™ trench-gate field-stop structure enabling fast, soft current fall with minimal tail current and low Eoff. Its 4 nF reverse transfer capacitance (Cres) and 930 pF input capacitance (Cies) support high-frequency operation up to 40 kHz in resonant converters.
The device integrates a co-packaged ultrafast diode with low Qrr and soft recovery, critical for minimizing voltage overshoot during commutation. Gate threshold voltage (4.0 V typ.) and transconductance (25 S) are tightly specified to ensure predictable drive requirements and current control linearity across –40°C to +175°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE | 650 V - Withstands DC-link voltages up to 520 V in 3-level NPC or 2-level topologies with 20% margin. |
| IC (nominal) | 15 A - Rated continuous collector current at Tc = 100°C; supports 23 A pulsed operation under thermal limits. |
| VCE(sat) | 1.35 V @ 15 A, 25°C - Enables <1.5 W conduction loss per device at full load, reducing heatsink size. |
| Eoff | 0.14 mJ @ 400 V, 15 A, 25°C - Low turn-off energy enables efficient operation at 20–40 kHz in solar string inverters. |
| Rth(j-c) | 1.40 K/W - Allows direct mounting on 6 cm² copper PCB or heatsink for ≤50 W dissipation without forced air. |
| QG | 38 nC - Matches standard ±15 V gate drivers (e.g., 1ED020I12FA) with <25 Ω external RG for controlled dv/dt. |
| Tvj(max) | 175°C - Supports extended operation in sealed industrial UPS enclosures with ambient up to 85°C. |
Pinout & Package
PG-TO263-3 (D²PAK) surface-mount package with isolated tab; thermally enhanced copper leadframe and Pb-free plating compliant with RoHS.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (Tab) | Main power output terminal | Electrically connected to exposed metal tab; requires insulated mounting or thermal pad for isolation. |
| Emitter | Power return path and reference node | Serves as common source for gate driver return and current sense; low-inductance layout critical for dV/dt immunity. |
| Gate | Control input | High-impedance MOS-controlled terminal; requires <100 nH gate loop inductance to avoid oscillation during switching. |
Key Features
| Feature | Design Value |
|---|---|
| High-speed soft switching | 117 ns td(off) + 30 ns tf @ 25°C enables clean zero-voltage transition in LLC and phase-shifted full-bridge designs. |
| Low VCE(sat) drift | 1.60 V @ 175°C (vs. 1.35 V @ 25°C) - <19% increase ensures stable conduction loss across full industrial temperature range. |
| Integrated ultrafast diode | Soft recovery with low Qrr minimizes snubber stress and EMI in bidirectional switch legs of microinverters. |
| JEDEC-qualified reliability | Qualified per JEDEC JESD22-A108 (temperature cycling), JESD22-A110 (HTOL), and JESD47 - validated for 15+ year field life. |
| Pb-free & RoHS-compliant | Lead-free matte tin plating on leads and tab; compatible with lead-free reflow profiles (peak 260°C, MSL1). |
Applications
| Solar String Inverter | Industrial SMPS |
|---|---|
|
Use Scenario: Three-phase 3–5 kW string inverter with unidirectional DC/AC stage using 6-pack IGBT modules. IC Role / Device Role / Timing Role: Main switching device in inverter leg; operates at 16–20 kHz with sinusoidal PWM and active neutral-point clamping. Use Value: 0.14 mJ Eoff reduces total switching loss by 22% vs. previous-gen IGBTs, enabling >98.5% peak efficiency. |
Use Scenario: 3 kW telecom rectifier with PFC front-end and isolated LLC resonant DC/DC stage. IC Role / Device Role / Timing Role: Primary-side switch in LLC half-bridge; driven with variable frequency control and ZVS-assisted turn-on. Use Value: Soft current fall and low Cres (4 pF) enable reliable ZVS down to 50% load, eliminating auxiliary snubbers. |
| Welding Power Supply | Energy Storage System Charger |
|
Use Scenario: IGBT-based inverter for 200 A constant-current arc welding with rapid current slew rate demands. IC Role / Device Role / Timing Role: Output stage switch handling 100–200 A pulsed loads at 1–5 kHz with tight current regulation. Use Value: 60 A IC(puls) rating and 175°C Tvj(max) sustain 100% duty cycle bursts without thermal derating. |
Use Scenario: Bi-directional 10 kW DC/DC converter linking 400 V battery stack to 600 V grid interface in residential ESS. IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge topology; commutated with phase-shift modulation at 25 kHz. Use Value: Low QG (38 nC) and symmetric Eon/Eoff balance allow precise dead-time control and minimize circulating current loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed IGBT applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STGP15H60DF | 600 V rating, higher VCE(sat) (1.6 V), slower tf (55 ns), no integrated diode | Requires external ultrafast diode; limited to ≤400 V DC-link; less suitable for soft-switching topologies | Select only if cost-sensitive and operating below 400 V with fixed-frequency hard switching. |
| IXYS IXGN15N60A3 | 600 V rating, higher QG (52 nC), higher Eoff (0.21 mJ), TO-247 package | Larger footprint and higher thermal resistance (0.5 K/W j-c); better for lower-frequency, high-current industrial drives | Prefer for 8–15 kHz motor drives where gate drive strength and ruggedness outweigh switching speed needs. |
Compared with STGP15H60DF and IXGN15N60A3, IGB15N65S5ATMA1 offers superior soft-switching capability, lower conduction loss at elevated temperature, and smaller surface-mount form factor-making it optimal for space-constrained, high-efficiency solar and SMPS designs requiring ≥20 kHz operation.
Availability
IGB15N65S5ATMA1 is available at Aetrix Electronics and suitable for solar string inverters, industrial SMPS, welding power supplies, and energy storage system chargers requiring stable component supply and long-term industrial lifecycle support.
Supply support for IGB15N65S5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
This device belongs to the TRENCHSTOP™ 5 high-speed IGBT product line, engineered specifically for high-frequency, high-efficiency power conversion in photovoltaic inverters and industrial switching-mode power supplies.
FAQ
What gate resistor value is recommended for optimal switching performance?
A 25 Ω gate resistor is specified in the datasheet for standardized testing (Eon/Eoff measurement at 400 V, 15 A). For 20 kHz solar inverter use, 15–22 Ω balances dv/dt control (<50 V/ns) and switching loss; values below 10 Ω risk gate ringing due to 7 nH internal emitter inductance.
Does IGB15N65S5ATMA1 include an anti-parallel diode?
Yes-it integrates an ultrafast, soft-recovery diode in the same PG-TO263-3 package. The diode shares the emitter terminal and exhibits low reverse recovery charge (Qrr) and negligible tail current, verified in inductive-load switching waveforms per Figure E of the datasheet.
Can this IGBT operate reliably at 175°C junction temperature continuously?
Yes-the device is rated for continuous operation up to Tvj = 175°C, with VCE(sat) and switching parameters fully characterized at that temperature. Derating curves in Figures 6 and 9 confirm stable performance, provided case temperature remains ≤100°C under 15 A DC load.
Is the PG-TO263-3 package electrically isolated?
No-the collector is internally connected to the exposed metal tab. Electrical isolation requires either a dielectric thermal pad (e.g., Bergquist Sil-Pad) or insulating mounting hardware. The tab must not contact grounded heatsinks unless isolation is confirmed via 2.5 kV AC hipot test per datasheet Section 8.
IGB15N65S5ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- TRENCHSTOP™ 5
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- IGBT Type:
- Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):
- 650 V
- Current - Collector (Ic) (Max):
- 35 A
- Current - Collector Pulsed (Icm):
- 60 A
- Vce(on) (Max) @ Vge, Ic:
- 1.7V @ 15V, 15A
- Power - Max:
- 105 W
- Switching Energy:
- 250µJ (on), 140µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 38 nC
- Td (on/off) @ 25°C:
- 12ns/117ns
- Test Condition:
- 400V, 15A, 25Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3-2
IGB15N65S5ATMA1 FAQ
1.How can I place an order for IGB15N65S5ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IGB15N65S5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IGB15N65S5ATMA1 reliable?
The price and inventory of IGB15N65S5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGB15N65S5ATMA1 is usually 5 days.
3.What payment methods are accepted for IGB15N65S5ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGB15N65S5ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IGB15N65S5ATMA1?
IGB15N65S5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IGB15N65S5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IGB15N65S5ATMA1?
For technical support, including IGB15N65S5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGB15N65S5ATMA1 requirements.
6.How does Aetrix verify that IGB15N65S5ATMA1 is sourced from the original manufacturer or authorized distributors?
All IGB15N65S5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGB15N65S5ATMA1 meets industry standards.
7.What is the process for return or replacement of IGB15N65S5ATMA1?
All IGB15N65S5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGB15N65S5ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IGB15N65S5ATMA1 part is unused and in its original packaging.
Return procedure for IGB15N65S5ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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