Infineon Technologies IGB20N60H3ATMA1

Overview

IGB20N60H3ATMA1 from Infineon is a 600 V, 20 A high-speed trench and fieldstop IGBT optimized for switching frequencies up to 100 kHz in industrial power converters. It delivers 1.95 V V_CE(sat) at 25°C, 175°C maximum junction temperature, and low turn-off energy (0.24 mJ) for efficient thermal management in compact designs.

For engineers reviewing the IGB20N60H3ATMA1 datasheet, IGB20N60H3ATMA1 pinout, IGB20N60H3ATMA1 application, or IGB20N60H3ATMA1 equivalent, key selection criteria include its 0.88 K/W junction-to-case thermal resistance, 120 nC total gate charge, and robust short-circuit withstand capability (5 µs at 15 V gate drive).

Technical Context

This third-generation TRENCHSTOP™ IGBT integrates fieldstop layer and trench gate structure to simultaneously reduce conduction loss (low V_CE(sat)) and switching loss (low E_off, fast t_d(off) = 194 ns). Its dynamic parameters are characterized under standardized inductive-load conditions (V_CC = 400 V, I_C = 20 A, r_G = 14.6 Ω).

The device supports operation across -40°C to +175°C junction temperature range with JEDEC-qualified reliability and RoHS-compliant packaging. Gate-emitter threshold voltage (4.1–5.7 V) and transconductance (10.9 S) ensure stable turn-on behavior under varying thermal and drive conditions.

Key Specifications

Pinout & Package

IGB20N60H3ATMA1 is housed in PG-TO263-3 (D²PAK) surface-mount package with isolated tab, optimized for high-current PCB mounting and thermal transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Compared with IKP20N60H3 and FGA20N60UFD, IGB20N60H3ATMA1 provides superior thermal performance (0.88 K/W), lower saturation voltage, and surface-mount compatibility-making it optimal for high-power-density industrial converters where board space and thermal management are critical.

Availability

IGB20N60H3ATMA1 is available at Aetrix Electronics and suitable for uninterruptible power supplies, industrial welding converters, and high-frequency motor drives requiring stable component supply and long-term industrial lifecycle support.

Supply support for IGB20N60H3ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This IGBT belongs to Infineon's TRENCHSTOP™ H3 high-speed series, engineered specifically for industrial switching applications demanding high efficiency, thermal robustness, and reliability at elevated junction temperatures.

FAQ

What gate resistor value is recommended for IGB20N60H3ATMA1 in a 400 V, 20 A inverter application?

A 14.6 Ω gate resistor is specified in the datasheet for characterization (V_CC = 400 V, I_C = 20 A), yielding balanced switching speed and EMI. Lower values (≤10 Ω) increase dI/dt and risk oscillation; higher values (≥22 Ω) raise E_on/E_off and reduce efficiency. Layout parasitics must be minimized regardless of R_G choice.

Does IGB20N60H3ATMA1 include an integrated freewheeling diode?

No. IGB20N60H3ATMA1 is a standalone IGBT in PG-TO263-3 package with no integrated diode. A separate ultrafast diode (e.g., IKP20N60H3's companion diode or discrete IDW20E60) must be used in inductive switching applications to handle reverse recovery current.

Can IGB20N60H3ATMA1 operate reliably at 175°C junction temperature continuously?

Yes. The device is rated for continuous operation up to 175°C junction temperature, validated per JEDEC standards. However, sustained operation at this limit requires strict thermal design: case temperature must remain ≤110°C (per Fig. 4), and gate drive must maintain ≥15 V to prevent unintended turn-on due to reduced V_GE(th).

Is the PG-TO263-3 package of IGB20N60H3ATMA1 electrically isolated?

Yes. The PG-TO263-3 package features an electrically isolated collector tab, allowing direct mounting to a grounded heatsink without additional insulation. This simplifies thermal design and improves reliability versus non-isolated packages like TO-220FP, where insulating pads add thermal resistance.