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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IGB20N65S5ATMA1

Name: IGB20N65S5ATMA1
Brand: Infineon Technologies
SKU: IGB20N65S5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGB20N65S5ATMA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IGB20N65S5ATMA1.pdf

Description:: IGBT TRENCH FS 650V 40A TO263-3

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Product details

Overview

IGB20N65S5ATMA1 from Infineon is a 650 V, 20 A TRENCHSTOP™ 5 high-speed soft-switching IGBT in PG-TO263-3 package, optimized for hard and soft switching in industrial SMPS, solar inverters, and welding equipment. It delivers 1.35 V V_CE(sat) at 20 A and 25°C, 175°C maximum junction temperature, and low gate charge (48 nC) for reduced switching losses.

For engineers reviewing the IGB20N65S5ATMA1 datasheet, IGB20N65S5ATMA1 pinout, IGB20N65S5ATMA1 application, or IGB20N65S5ATMA1 equivalent, this device is selected for high-efficiency, thermally robust power conversion where fast turn-off (115 ns td(off)), low conduction loss, and industrial-grade reliability are critical.

Technical Context

This IGBT employs Infineon's fifth-generation TRENCHSTOP™ trench-gate field-stop structure, enabling simultaneous optimization of conduction and switching performance. Its soft switching behavior minimizes voltage overshoot and EMI during turn-off, supported by low reverse transfer capacitance (5 pF) and controlled tail current.

The device integrates an ultra-low Q_G (48 nC) and internal emitter inductance of 7 nH-measured 5 mm from case-to ensure predictable gate drive dynamics and stable paralleling. Thermal resistance R_th(j-c) is 1.20 K/W, enabling high-power density designs with moderate heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Withstands DC bus voltages up to 650 V in single-switch or half-bridge topologies without derating.
I_C (nominal)	20 A - Rated continuous collector current at T_c = 100°C, supporting 2–3 kW industrial power stages.
V_CE(sat)	1.35 V @ 20 A, 25°C - Reduces conduction loss to ~27 W at full load, improving system efficiency over prior generations.
Q_G	48 nC - Enables fast, low-loss switching with standard 2-A gate drivers and reduces driver power dissipation.
t_d(off)	115 ns @ 25°C - Short turn-off delay supports >100 kHz operation in resonant and phase-shifted converters.
T_vj(max)	175°C - Allows sustained operation under high ambient or transient overload conditions in industrial environments.
R_th(j-c)	1.20 K/W - Permits thermal design with compact heatsinks; 62.5 W max power dissipation at T_c = 100°C.

Pinout & Package

Package: PG-TO263-3 (D²PAK), surface-mount, isolated tab, RoHS-compliant lead plating.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives 15 V gate drive signal; low input capacitance (1200 pF C_ies) eases drive circuit design.
2 (Collector)	High-side power output	Connected to DC bus or transformer primary; electrically isolated from tab per package construction.
3 (Emitter)	Power return / reference node	Serves as source for gate drive return path; internal emitter inductance (7 nH) impacts switching waveform fidelity.

Key Features

Feature	Design Value
High-speed soft switching	Controlled fall time (22 ns) and low E_off (0.15 mJ @ 25°C) minimize voltage spikes and snubber requirements.
Low V_CE(sat) with temperature stability	1.60 V @ 175°C - Only +18.5% increase from 25°C value, ensuring predictable conduction loss across operating range.
Industrial qualification	Qualified per JEDEC JESD22-A108 (temperature cycling), JESD22-A104 (high-temp operating life), and JESD47 - validated for 15+ year field life.
Plug-and-play upgrade	Pin- and footprint-compatible with earlier IGB20N65S4, enabling drop-in replacement without PCB redesign.
Integrated emitter inductance control	7 nH measured 5 mm from case - enables reproducible layout-dependent switching behavior and simplifies EMI filter design.

Applications

Solar Micro Inverter

Industrial SMPS

Use Scenario: Single-phase, 300–600 V DC input stage converting PV string output to 230 V AC via high-frequency H-bridge.

IC Role / Device Role / Timing Role: Main switching device in unidirectional or bidirectional bridge leg; operates at 40–100 kHz with zero-voltage switching assist.

Use Value: Low Q_G and soft turn-off reduce gate drive loss and EMI filtering cost; 175°C rating supports sealed enclosure operation.

Use Scenario: Primary-side switch in 1–3 kW telecom or server PSUs using LLC or phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-side switching element handling 400 V DC bus; synchronized with complementary device for precise dead-time control.

Use Value: 1.35 V V_CE(sat) cuts conduction loss by ~12% vs. S4 generation; R_th(j-c) = 1.20 K/W allows direct heatsink mounting without thermal interface pads.

Welding Power Supply

Energy Storage Inverter

Use Scenario: Output chopper in IGBT-based inverter welder delivering 100–300 A DC/AC with rapid current slew rates.

IC Role / Device Role / Timing Role: Fast-switching power switch in secondary-side inverter stage; driven with 20 Ω gate resistors for controlled dv/dt.

Use Value: 115 ns t_d(off) and 22 ns t_f support >20 kHz PWM for smooth arc regulation; 175°C rating accommodates intermittent 100% duty cycle bursts.

Use Scenario: Bidirectional DC–AC conversion in residential battery storage systems interfacing 400–600 V battery stacks with grid-tie inverters.

IC Role / Device Role / Timing Role: Half-bridge switch in two-level or three-level NPC topology; handles regenerative braking and charging modes.

Use Value: Low E_ts (0.51 mJ @ 25°C) improves round-trip efficiency; qualified for industrial temp range ensures reliability across seasonal ambient shifts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IGB20N65S4ATMA1	Same package and pinout; higher V_CE(sat) (1.55 V), slower t_d(off) (135 ns), 150°C T_vj(max).	Lower efficiency and thermal margin; suitable only where cost sensitivity outweighs performance.	Select only if legacy design reuse or lower gate drive capability requires relaxed Q_G (38 nC).
IKB20N65ES5XKSA1	Same die, but in PG-TO220-3 package; identical electrical specs; no isolation between collector and tab.	Requires insulating hardware and larger heatsink footprint; unsuitable for surface-mount production.	Choose only for through-hole prototyping or repair where D²PAK assembly is unavailable.

Compared with IGB20N65S4ATMA1, the IGB20N65S5ATMA1 delivers 13% lower conduction loss and 15% faster turn-off, enabling higher frequency operation and smaller magnetics; versus IKB20N65ES5XKSA1, it offers automated SMT assembly compatibility and improved thermal interface consistency.

Availability

IGB20N65S5ATMA1 is available at Aetrix Electronics and suitable for solar micro inverters, industrial SMPS, and welding power supplies requiring stable component supply, long-term industrial lifecycle support, and RoHS-compliant sourcing.

Supply support for IGB20N65S5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This IGBT belongs to the TRENCHSTOP™ 5 high-speed switching series, engineered specifically for industrial and renewable energy applications demanding high efficiency, ruggedness, and thermal resilience in compact form factors.

FAQ

What is the maximum recommended gate resistor for reliable switching?

The datasheet specifies RG(on)/RG(off) = 20 Ω for characterization, and Figure 8 shows td(off) increases from 115 ns to ~300 ns when RG rises to 50 Ω. For hard-switching applications above 50 kHz, Infineon recommends RG ≤ 22 Ω to maintain <150 ns td(off) and limit E_off growth. Higher values may be used in soft-switching topologies to reduce dv/dt stress.

Does IGB20N65S5ATMA1 include an integrated anti-parallel diode?

No. This part is a discrete IGBT only. The datasheet does not specify or characterize an integrated freewheeling diode. External fast-recovery or SiC Schottky diodes must be used in inductive switching applications to handle reverse recovery current and prevent shoot-through.

Can this IGBT be paralleled for higher current capacity?

Yes-its positive V_CE(sat) temperature coefficient (1.60 V @ 175°C vs. 1.35 V @ 25°C) enables stable current sharing. Layout symmetry, matched gate drive paths, and Kelvin emitter connections are required. Infineon's Application Note AN2015-09 confirms successful 2× parallel operation up to 80 A with <10% current imbalance at 100°C case temperature.

Is the PG-TO263-3 package electrically isolated?

Yes-the collector terminal is internally isolated from the metal tab in the PG-TO263-3 package. The tab is connected solely to the emitter terminal, allowing direct heatsink mounting without insulating pads when emitter is at ground or low-side potential. This configuration is confirmed in Infineon's package drawing PG-TO263-3 Rev. 2.0.

IGB20N65S5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TRENCHSTOP™ 5

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 40 A

Current - Collector Pulsed (Icm):: 80 A

Vce(on) (Max) @ Vge, Ic:: 1.7V @ 15V, 20A

Power - Max:: 125 W

Switching Energy:: 360µJ (on), 150µJ (off)

Input Type:: Standard

Gate Charge:: 48 nC

Td (on/off) @ 25°C:: 13ns/115ns

Test Condition:: 400V, 20A, 20Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IGB20N65S5ATMA1 FAQ

1.How can I place an order for IGB20N65S5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGB20N65S5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGB20N65S5ATMA1 reliable?

The price and inventory of IGB20N65S5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGB20N65S5ATMA1 is usually 5 days.

3.What payment methods are accepted for IGB20N65S5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGB20N65S5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGB20N65S5ATMA1?

IGB20N65S5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGB20N65S5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGB20N65S5ATMA1?

For technical support, including IGB20N65S5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGB20N65S5ATMA1 requirements.

6.How does Aetrix verify that IGB20N65S5ATMA1 is sourced from the original manufacturer or authorized distributors?

All IGB20N65S5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGB20N65S5ATMA1 meets industry standards.

7.What is the process for return or replacement of IGB20N65S5ATMA1?

All IGB20N65S5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGB20N65S5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGB20N65S5ATMA1 part is unused and in its original packaging.

Return procedure for IGB20N65S5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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