My Inquiry
My Account
Infineon Technologies IGB30N60H3ATMA1
- Part No.:
- IGB30N60H3ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IGB30N60H3ATMA1.pdf
- Description:
- IGBT TRENCH FS 600V 60A TO263-3
- Quantity:
- Payment:
- Shipping:
Inventory:1,310
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IGB30N60H3ATMA1 from Infineon is a 600V, 30A high-speed trench-and-fieldstop IGBT optimized for hard-switching at up to 50 kHz in industrial power converters. It delivers 1.95 V VCE(sat) at 30 A and 25°C, 0.44 mJ turn-off energy, and 175°C maximum junction temperature - enabling compact, thermally robust designs in UPS and welding inverters.
For engineers reviewing the IGB30N60H3ATMA1 datasheet, IGB30N60H3ATMA1 pinout, IGB30N60H3ATMA1 application, or IGB30N60H3ATMA1 equivalent, key selection criteria include switching loss trade-offs at elevated temperature, gate drive compatibility with ±20 V rating, thermal resistance (Rth(j-c) = 0.80 K/W), and short-circuit ruggedness (5 µs @ 15 V).
Technical Context
This third-generation TRENCHSTOP™ IGBT integrates fieldstop layer and trench gate structure to simultaneously reduce conduction loss (low VCE(sat)) and switching loss (low Eoff, fast td(off) = 207 ns typ. at 25°C). Its dynamic parameters are characterized under standardized inductive-load conditions (VCC = 400 V, IC = 30 A, rG = 10.5 Ω, Lσ = 95 nH).
The device supports high-reliability operation across –40°C to +175°C junction range, qualified per JEDEC standards, with Pb-free plating and halogen-free molding compound. Gate threshold voltage (VGE(th) = 4.1–5.7 V) and transconductance (gfs = 16 S typ.) ensure stable turn-on behavior under varying thermal and drive conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE | 600 V - supports DC bus voltages up to 400 V in 3-phase rectified systems with margin |
| IC | 30 A continuous - rated for sustained conduction at TC = 100°C |
| VCE(sat) | 1.95 V @ 30 A, 25°C - reduces conduction loss and heatsink sizing vs. older H2 series |
| Eoff | 0.44 mJ @ 25°C - enables higher switching frequencies without excessive loss penalty |
| Rth(j-c) | 0.80 K/W - allows direct mounting to heatsink with predictable thermal path for thermal design |
| tSC | 5 µs @ 15 V gate drive - defines safe short-circuit handling window for protection circuitry design |
| QG | 165 nC - determines required gate driver peak current (e.g., >15 A for 10 ns rise time) |
Pinout & Package
IGB30N60H3ATMA1 is housed in PG-TO263-3 (D²PAK) package: surface-mount, isolated tab, single-row 3-pin configuration with standard footprint and thermal pad for PCB-level heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (C) | Main power output terminal | Connected to high-side switch node; carries full load current and withstands 600 V blocking |
| Gate (G) | Control input | Receives ±20 V-rated drive signal; requires low-inductance layout due to 165 nC QG |
| Emitter (E) | Power return and reference | Serves as common source for gate drive and current sense; ties to emitter ground plane |
Key Features
| Feature | Design Value |
|---|---|
| TRENCHSTOP™ technology | Enables simultaneous low VCE(sat) (1.95 V) and low Eoff (0.44 mJ) - critical for efficiency in 20–50 kHz converters |
| 175°C max junction temperature | Supports operation in high-ambient environments (e.g., enclosed UPS cabinets) without derating |
| JEDEC-qualified reliability | Validated for industrial power control lifetime requirements including thermal cycling and humidity exposure |
| RoHS-compliant materials | Pb-free lead plating and halogen-free mold compound meet global environmental compliance mandates |
| PSpice models available | Enables accurate simulation of switching waveforms and loss estimation before hardware prototyping |
Applications
| Uninterruptible Power Supplies (UPS) | Industrial Welding Converters |
|---|---|
Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz AC output from rectified DC bus under mains failure. IC Role / Device Role / Timing Role: High-side IGBT in inverter leg switching at 20–35 kHz to synthesize sinusoidal output waveform. Use Value: Low Eoff and 175°C rating allow high-power density design with reduced heatsink mass and fan noise. | Use Scenario: Inverter-based arc welding equipment requiring precise current control and fast response to load transients. IC Role / Device Role / Timing Role: Main switching device in primary-side DC-DC converter regulating output current via PWM duty cycle. Use Value: Stable VGE(th) over temperature ensures consistent turn-on timing during extended weld cycles. |
| High-Frequency Motor Drives | Induction Heating Systems |
Use Scenario: Compact HVAC inverter drives operating at 12–25 kHz for variable-speed PMSM/IM control. IC Role / Device Role / Timing Role: Half-bridge switch in 3-phase inverter stage, driven by isolated gate driver with 15 V supply. Use Value: Rth(j-c) = 0.80 K/W enables direct thermal coupling to aluminum heatsink, simplifying thermal interface design. | Use Scenario: Solid-state induction heating generators delivering 20–100 kW at 20–100 kHz for metal hardening and brazing. IC Role / Device Role / Timing Role: Resonant inverter switch in series-resonant topology, conducting high di/dt currents with low tail current. Use Value: Fast fall time (tf = 22 ns) and low Cres (50 pF) minimize capacitive turn-on losses in zero-voltage switching (ZVS) operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed IGBT applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IKW30N60H3 | Same die, co-packaged with anti-parallel FRED diode in TO-247 package | Eliminates need for external freewheeling diode in inductive loads | Select when integrated diode simplifies layout and improves reverse recovery consistency |
| IGB40N60H3 | Higher IC rating (40 A), identical VCE/VCE(sat)/Eoff, same package | Provides headroom for future power scaling or derating in high-temperature environments | Select when system requires >30 A continuous current or tighter thermal margin |
Compared with IKW30N60H3 and IGB40N60H3, IGB30N60H3ATMA1 offers optimal cost-performance balance for fixed 30 A designs where discrete diode placement is acceptable and thermal headroom is sufficient.
Availability
IGB30N60H3ATMA1 is available at Aetrix Electronics and suitable for uninterruptible power supplies, industrial welding converters, and high-frequency motor drives requiring stable component supply and long-term industrial lifecycle support.
Supply support for IGB30N60H3ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.
This IGBT belongs to Infineon's TRENCHSTOP™ H3 high-speed series, engineered specifically for industrial switching applications demanding low-loss, high-temperature operation and robust short-circuit capability.
FAQ
What is the maximum gate-emitter voltage rating for IGB30N60H3ATMA1?
The absolute maximum gate-emitter voltage is ±20 V DC. Exceeding this rating risks permanent gate oxide damage. Recommended operating range is –10 V to +15 V for reliable turn-off and immunity to Miller-induced false triggering during high dv/dt events.
Does IGB30N60H3ATMA1 include an integrated freewheeling diode?
No. IGB30N60H3ATMA1 is a standalone IGBT in PG-TO263-3 package with no integrated diode. For inductive load applications, an external ultrafast soft-recovery diode (e.g., IDP30E65D1) must be used in anti-parallel configuration.
How does junction temperature affect VCE(sat) performance?
VCE(sat) increases with junction temperature: 1.95 V at 25°C, 2.30 V at 125°C, and 2.50 V at 175°C. This positive temperature coefficient supports current sharing in parallel configurations and provides inherent thermal stability during overload conditions.
What is the recommended gate resistor value for standard operation?
A 10.5 Ω gate resistor is used in the datasheet's switching characterization (Fig. E). For most 20–50 kHz applications, 10–22 Ω balances switching speed, EMI, and gate driver stress. Lower values (<10 Ω) increase peak gate current demand; higher values (>33 Ω) degrade switching times and increase total energy loss.
IGB30N60H3ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- TrenchStop®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- IGBT Type:
- Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 60 A
- Current - Collector Pulsed (Icm):
- 120 A
- Vce(on) (Max) @ Vge, Ic:
- 2.4V @ 15V, 30A
- Power - Max:
- 187 W
- Switching Energy:
- 1.17mJ
- Input Type:
- Standard
- Gate Charge:
- 165 nC
- Td (on/off) @ 25°C:
- 18ns/207ns
- Test Condition:
- 400V, 30A, 10.5Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3-2
IGB30N60H3ATMA1 FAQ
1.How can I place an order for IGB30N60H3ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IGB30N60H3ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IGB30N60H3ATMA1 reliable?
The price and inventory of IGB30N60H3ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGB30N60H3ATMA1 is usually 5 days.
3.What payment methods are accepted for IGB30N60H3ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGB30N60H3ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IGB30N60H3ATMA1?
IGB30N60H3ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IGB30N60H3ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IGB30N60H3ATMA1?
For technical support, including IGB30N60H3ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGB30N60H3ATMA1 requirements.
6.How does Aetrix verify that IGB30N60H3ATMA1 is sourced from the original manufacturer or authorized distributors?
All IGB30N60H3ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGB30N60H3ATMA1 meets industry standards.
7.What is the process for return or replacement of IGB30N60H3ATMA1?
All IGB30N60H3ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGB30N60H3ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IGB30N60H3ATMA1 part is unused and in its original packaging.
Return procedure for IGB30N60H3ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IGB30N60H3ATMA1 Tags
;;2.jpg)
-
STGD3NB60SDT4
STMicroelectronics
-
HGTD1N120BNS9A
onsemi
-
STGF7NB60SL
STMicroelectronics
-
FGD5T120SH
onsemi
-
STGB3NC120HDT4
STMicroelectronics
-
IKP20N60TXKSA1
Infineon Technologies
-
STGW30H60DFB
STMicroelectronics
-
STGB30M65DF2
STMicroelectronics
-
IKB20N60TATMA1
Infineon Technologies
-
STGB30V60DF
STMicroelectronics
-
IKW30N60DTPXKSA1
Infineon Technologies
-
ISL9V3040P3
onsemi
Tech Hub
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
