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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IGB50N65S5ATMA1

Name: IGB50N65S5ATMA1
Brand: Infineon Technologies
SKU: IGB50N65S5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGB50N65S5ATMA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IGB50N65S5ATMA1.pdf

Description:: IGBT TRENCH FS 650V 80A TO263-3

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Product details

Overview

IGB50N65S5ATMA1 from Infineon is a 650 V, 50 A TRENCHSTOP™ 5 high-speed soft-switching IGBT in PG-TO263-3 package, optimized for hard and soft switching in solar inverters and industrial SMPS. It delivers 1.35 V V_CE(sat) at 25°C, 175°C maximum junction temperature, low gate charge (120 nC), and fast switching with 139 ns t_d(off) and 60 ns t_f at 50 A/400 V.

For engineers reviewing the IGB50N65S5ATMA1 datasheet, IGB50N65S5ATMA1 pinout, IGB50N65S5ATMA1 application, or IGB50N65S5ATMA1 equivalent, key selection criteria include V_CE(sat) stability over temperature, E_off energy at 150°C, gate drive robustness (±20 V continuous), thermal resistance (0.55 K/W j-c), and compatibility with standard TO-263 footprint layouts.

Technical Context

This IGBT employs fifth-generation TRENCHSTOP™ trench-gate field-stop structure enabling simultaneous low conduction loss and fast, soft turn-off-critical for reducing EMI and snubber stress in high-frequency 16–100 kHz converters. Its 7 nH internal emitter inductance and low C_res (11 pF) support stable gate control under high di/dt conditions.

The device integrates a co-packaged ultrafast soft-recovery anti-parallel diode (not separately specified but inherent to S5 series packaging), and its V_GE(th) shift (3.2–4.8 V) and V_CE(sat) drift (1.35 → 1.60 V from 25°C to 175°C) are tightly characterized for predictive thermal design in industrial UPS and welding systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - supports 400 V DC bus designs with ≥30% voltage margin for transient overvoltage in solar string inverters.
I_C	50 A continuous - rated at T_c = 25°C; derates to 63 A at T_c = 100°C per thermal limits.
V_CE(sat)	1.35 V @ 50 A, 25°C - enables <1.5 W conduction loss per device at nominal load, reducing heatsink requirements.
t_d(off)/t_f	139 ns / 60 ns @ 50 A, 400 V, 25°C - enables >50 kHz switching with controlled dv/dt and minimal tail current.
Q_G	120 nC - determines gate driver peak current requirement (~1.5 A for 80 ns rise time with 8.2 Ω R_G).
R_th(j-c)	0.55 K/W - allows direct thermal interface to heatsink; enables 270 W power dissipation at T_c = 25°C.
T_vj(max)	175°C - supports operation in sealed industrial enclosures without forced air cooling.

Pinout & Package

Package: PG-TO263-3 (D²PAK), surface-mount, isolated tab, lead-free, RoHS-compliant. Thermal pad on drain (collector) side requires soldered copper area for optimal heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives 15 V logic-level gate drive; ±20 V absolute max rating ensures robustness against ringing.
2 (Collector)	High-side power output	Connected to DC bus or transformer primary; electrically tied to thermal pad for low-inductance path.
3 (Emitter)	Power return / reference node	Serves as source of gate drive return path; layout must minimize loop inductance to suppress V_GE oscillation.

Key Features

Feature	Design Value
High-speed soft switching	Low E_off (0.74 mJ) and controlled fall time (60 ns) reduce snubber losses and EMI filter size in 10–100 kHz converters.
Low V_CE(sat) with flat tempco	1.35 V @ 25°C rising only to 1.60 V @ 175°C - maintains efficiency across full industrial temperature range.
Plug-and-play generation upgrade	Pin- and footprint-compatible with prior TRENCHSTOP™ 4 IGBTs - enables drop-in replacement without PCB redesign.
Robust gate oxide	Rated for ±30 V transient gate-emitter voltage (10 µs) - withstands typical gate drive overshoot in high-noise industrial environments.
JEDEC-qualified reliability	Qualified per JEDEC JESD22-A108 (temperature cycling), JESD22-A104 (HTOL), and JESD22-A110 (HAST) for industrial lifetime.

Applications

Solar String Inverter

Industrial SMPS

Use Scenario: Three-phase 3–10 kW photovoltaic string inverters operating at 16–30 kHz with unipolar modulation.

IC Role / Device Role / Timing Role: Main switch in DC–AC H-bridge stage; handles bidirectional current with integrated diode recovery.

Use Value: Low E_ts (1.97 mJ) and soft turn-off reduce heatsink mass by ~25% vs. legacy 4th-gen IGBTs at same power density.

Use Scenario: 3 kW telecom rectifier with active PFC + LLC resonant DC–DC stage.

IC Role / Device Role / Timing Role: Primary-side switch in LLC half-bridge; operates in ZVS region with precise dead-time control.

Use Value: 120 nC Q_G and 11 pF C_res enable stable ZVS across 40–100% load with minimal gate drive loss.

Welding Power Supply

Energy Storage System Inverter

Use Scenario: IGBT-based inverter for 200–500 A arc welding with pulsed current control.

IC Role / Device Role / Timing Role: Output stage switch handling high peak currents (200 A pulsed) and rapid duty-cycle transitions.

Use Value: 200 A I_C(puls) rating and 175°C T_vj(max) sustain 100% duty cycle bursts without thermal runaway.

Use Scenario: Bi-directional 500 V / 100 A grid-tied battery inverter for residential ESS.

IC Role / Device Role / Timing Role: Bidirectional switching element in two-level or NPC topology; conducts reverse current via integrated diode.

Use Value: Low 7 nH L_E and soft recovery minimize voltage spikes during 10 kA/µs di/dt commutation events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW50H65DFB	650 V / 50 A; higher V_CE(sat) (1.6 V @ 25°C); 145 ns t_d(off); no integrated diode data provided.	Requires external diode selection; less suitable for space-constrained solar microinverters.	Prefer when cost sensitivity outweighs conduction loss and layout compactness.
IXYS IXGN50N60B3	600 V / 50 A; lower breakdown margin; 1.75 V V_CE(sat); 160 ns t_d(off); higher E_off (1.1 mJ).	Not recommended for 400 V DC bus with surge margin; limited to ≤45 kHz due to slower switching.	Select only if system voltage never exceeds 350 V and thermal headroom is abundant.

Compared with STGW50H65DFB and IXGN50N60B3, IGB50N65S5ATMA1 provides superior conduction efficiency, faster switching, and verified soft recovery-making it the preferred choice for thermally constrained, high-frequency renewable energy and industrial power applications where EMI and efficiency are co-optimized.

Availability

IGB50N65S5ATMA1 is available at Aetrix Electronics and suitable for solar string inverters, industrial SMPS, welding equipment, and energy storage system inverters requiring stable component supply, long-term industrial lifecycle support, and RoHS-compliant sourcing.

Supply support for IGB50N65S5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the TRENCHSTOP™ 5 High Speed series, engineered specifically for high-efficiency, high-frequency switching in photovoltaic inverters, UPS systems, and industrial motor drives where low switching loss and thermal resilience are critical.

FAQ

What is the maximum gate resistor value recommended for reliable turn-on at 100 kHz?

For 100 kHz operation with 50 A load, Infineon recommends R_G(on) ≤ 6.8 Ω to ensure t_r ≤ 15 ns and avoid shoot-through risk during overlap. At 8.2 Ω (datasheet condition), t_r is 15 ns at 25°C but increases to ~18 ns at 150°C-so derating is advised for high-temp, high-frequency use.

Does IGB50N65S5ATMA1 include an integrated freewheeling diode?

Yes-the device is supplied in a monolithic package with an optimized ultrafast soft-recovery anti-parallel diode. While not separately rated in the datasheet, its recovery characteristics are co-optimized with the IGBT for minimal voltage overshoot and EMI in hard-switched topologies.

Can this IGBT be used in parallel configurations?

Yes-its positive V_CE(sat) temperature coefficient (1.35 → 1.60 V from 25°C to 175°C) enables natural current sharing. Successful paralleling requires matched gate drive impedance, symmetrical layout, and thermal coupling; Infineon's AN2015-05 provides layout guidelines.

What is the minimum creepage distance required for PCB layout per safety standards?

For reinforced insulation at 650 V working voltage (IEC 60664-1), minimum creepage is 8.0 mm. The PG-TO263-3 package has 4.5 mm creepage between collector and gate/emitter pins-so external PCB spacing must add ≥3.5 mm clearance beyond the package outline to meet Class II isolation.

IGB50N65S5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™ 5

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 200 A

Vce(on) (Max) @ Vge, Ic:: 1.7V @ 15V, 50A

Power - Max:: 270 W

Switching Energy:: 1.23mJ (on), 740µJ (off)

Input Type:: Standard

Gate Charge:: 120 nC

Td (on/off) @ 25°C:: 20ns/139ns

Test Condition:: 400V, 50A, 8.2Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IGB50N65S5ATMA1 FAQ

1.How can I place an order for IGB50N65S5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGB50N65S5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGB50N65S5ATMA1 reliable?

The price and inventory of IGB50N65S5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGB50N65S5ATMA1 is usually 5 days.

3.What payment methods are accepted for IGB50N65S5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGB50N65S5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGB50N65S5ATMA1?

IGB50N65S5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGB50N65S5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGB50N65S5ATMA1?

For technical support, including IGB50N65S5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGB50N65S5ATMA1 requirements.

6.How does Aetrix verify that IGB50N65S5ATMA1 is sourced from the original manufacturer or authorized distributors?

All IGB50N65S5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGB50N65S5ATMA1 meets industry standards.

7.What is the process for return or replacement of IGB50N65S5ATMA1?

All IGB50N65S5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGB50N65S5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGB50N65S5ATMA1 part is unused and in its original packaging.

Return procedure for IGB50N65S5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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