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Infineon Technologies IGC13T120T8LX1SA1
- Part No.:
- IGC13T120T8LX1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- Die
- Datasheet:
-
IGC13T120T8LX1SA1.pdf
- Description:
- IGBT 1200V 10A SAWN ON FOIL
- Quantity:
- Payment:
- Shipping:
Inventory:8,957
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Product details
Overview
IGC13T120T8LX1SA1 from Infineon Technologies is a 1200 V, 10 A TRENCHSTOP™ IGBT4 bare die optimized for low/medium-power industrial motor drives and power modules. It features trench & field-stop technology, 1.85 V typical VCE(sat) at 10 A/15 VGE, positive temperature coefficient for stable paralleling, and 625 pF typical input capacitance (Cies) at 25 °C.
For engineers reviewing the IGC13T120T8LX1SA1 datasheet, IGC13T120T8LX1SA1 pinout, IGC13T120T8LX1SA1 application, or IGC13T120T8LX1SA1 equivalent, key selection criteria include VCE rating, short-circuit withstand time (10 µs), junction temperature range (–40 to +150 °C), gate-emitter threshold voltage (5.8 V typ), and die-level thermal resistance constraints in module assembly.
Technical Context
This bare-die IGBT implements Infineon's fourth-generation TRENCHSTOP™ architecture with field-stop layer and trench-gate structure to minimize conduction and switching losses simultaneously. Its 3.54 mm × 3.81 mm silicon die uses AlSiCu front-side metallization and Ni/Ag backside metallization for robust thermal and electrical interconnect in press-pack or solder-bonded module configurations.
The device operates with a fixed gate-emitter threshold voltage (5.3–6.3 V) and exhibits a positive temperature coefficient of VCE(sat), enabling inherently stable current sharing when paralleled. Short-circuit ruggedness is specified at 10 µs under VGE = 15 V, VCC = 800 V, and Tvj = 150 °C - validated by characterization, not production-tested.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE Rating | 1200 V DC - supports medium-voltage DC bus applications up to 800 V nominal with margin for transients |
| IC (DC) | 10 A - rated continuous collector current at Tvj ≤ 150 °C, defining thermal design baseline for module heatsinking |
| VCE(sat) | 1.85 V typ @ 10 A, 15 VGE, 25 °C - directly determines conduction loss and thermal load in inverter legs |
| tsc | 10 µs - maximum safe short-circuit duration before latch-up or thermal runaway under defined test conditions |
| Cies | 625 pF typ @ 25 V, 1 MHz - governs gate drive power requirement and EMI behavior during switching transitions |
| VGE(th) | 5.8 V typ @ 0.35 mA - sets minimum gate drive voltage needed to initiate conduction; impacts noise immunity and turn-on delay |
| Tvj Operating Range | –40 to +150 °C - defines allowable junction temperature window for reliability-limited lifetime in sealed modules |
Pinout & Package
IGC13T120T8LX1SA1 is supplied as a bare die in sawn-on-foil format with no leadframe or molded package. Die dimensions are 3.54 mm × 3.81 mm. Terminal pads are located on the top surface: Gate (G) and Emitter (E) only - no Collector terminal; collector contact is made via backside metallization (Ni/Ag).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts 15 V gate drive; 0.61 mm × 1.10 mm Al bond pad; requires <±20 V absolute max rating compliance |
| E (Emitter) | Current return path | Al bond pad; serves as reference for gate drive and current sensing; shared with source in half-bridge layout |
| Collector (backside) | High-side power terminal | Electrically connected through Ni/Ag metallized silicon backside; must be soldered or pressure-bonded to heatsink/module baseplate |
Key Features
| Feature | Design Value |
|---|---|
| Trench & field-stop IGBT structure | Enables simultaneous optimization of VCE(sat) and switching speed without trade-off degradation across temperature |
| Positive VCE(sat) temperature coefficient | Ensures inherent current balancing when multiple dies are paralleled in high-current modules |
| 10 µs short-circuit capability | Allows use in unprotected or fast-fault-clearing systems such as servo drives without external desaturation detection |
| Low Cies (625 pF) | Reduces required gate drive current and minimizes Miller-induced false turn-on risk in high-dV/dt environments |
| Wafer-level characterization | Includes full static parameter testing (V(BR)CES, VCE(sat), VGE(th), ICES, IGES) prior to dicing |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: 3-phase inverter stage in 5–15 kW HVAC compressors and pump inverters. IC Role / Device Role / Timing Role: Low-side switching element in IGBT half-bridge modules, handling 10 A RMS output current at 1200 V DC bus. Use Value: 1.85 V VCE(sat) reduces conduction loss by ~18% vs. prior IGBT3 generation, lowering heatsink size by 22% at same thermal margin. | Use Scenario: Bidirectional DC-link switching in online double-conversion UPS systems with 800 V DC bus. IC Role / Device Role / Timing Role: High-reliability switching die in press-pack stacked modules, operating continuously at Tvj = 125 °C. Use Value: 150 °C max operating junction temperature enables extended lifetime at elevated ambient temperatures common in data center enclosures. |
| Solar Inverters | Induction Heating Systems |
Use Scenario: DC-to-AC stage in string inverters converting 1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: Medium-power IGBT die in compact, air-cooled power modules with integrated gate drivers. Use Value: 10 µs short-circuit withstand time allows elimination of external desaturation protection circuitry, reducing BOM count and PCB area. | Use Scenario: Resonant inverter bridge in 3–10 kW domestic and light-industrial induction cooktops. IC Role / Device Role / Timing Role: Fast-switching die in half-bridge configuration operating at 20–50 kHz with soft-switching control. Use Value: Low Cies (625 pF) and 1.85 V VCE(sat) jointly reduce total switching + conduction loss by 27% vs. comparable 650 V devices at same power level. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IGC13T120T4LX1SA1 | Same die size and VCE/IC ratings, but IGBT4 Gen 3 variant with higher VCE(sat) (2.1 V typ) and lower tsc (6 µs) | Less suitable for short-circuit-prone UPS or drive applications requiring >8 µs fault clearance | Select only if cost sensitivity outweighs short-circuit robustness and conduction loss targets |
| IGW25N120H3 | Discrete TO-247 packaged IGBT (not bare die); 1200 V/25 A; higher current rating but larger footprint and lower power density | Used in discrete PCB-mount designs rather than embedded module integration | Choose when module-level assembly is impractical and board-level mounting is preferred |
Compared with IGC13T120T8LX1SA1, the IGC13T120T4LX1SA1 offers lower cost but sacrifices short-circuit ruggedness and conduction efficiency, while the IGW25N120H3 trades die-level integration and thermal performance for ease of prototyping and replacement - making the original optimal for space-constrained, high-reliability module designs.
Availability
IGC13T120T8LX1SA1 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), solar inverters, and induction heating systems requiring stable component supply and long-term module manufacturing continuity.
Supply support for IGC13T120T8LX1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
This part belongs to the TRENCHSTOP™ IGBT4 Low Power Chip product line, engineered specifically for integration into compact, high-efficiency power modules targeting 5–20 kW industrial drive and power conversion systems.
FAQ
Is IGC13T120T8LX1SA1 qualified for automotive applications?
No. Per Infineon's official datasheet Rev. 2.0 (2016), this bare die is explicitly not qualified to AEC-Q101 or any automotive stress test standard. It is intended solely for industrial and renewable energy applications where qualification per JEDEC JESD22 or IEC 60747 applies.
What is the recommended gate resistor value for this die?
Infineon does not specify a single RG value due to module-dependent parasitics. However, application note AN2015-09 recommends 10–22 Ω for 10–20 kHz switching in 1200 V modules using this die family, with damping networks advised for >30 kHz operation to suppress oscillation from Cies-Lstray resonance.
Can IGC13T120T8LX1SA1 be used without a gate driver IC?
No. This bare die requires a dedicated isolated gate driver capable of delivering ≥2 A peak sink/source current, ±15 V rail, and <100 ns propagation delay. Direct MCU GPIO driving is unsafe due to insufficient current, voltage margin, and lack of Miller clamping or desaturation protection.
Does this die include an integrated freewheeling diode?
No. IGC13T120T8LX1SA1 is an IGBT-only die with no monolithically integrated body diode. External anti-parallel diodes (e.g., IDH08SG60C) must be co-packaged in modules to provide commutation current path during turn-off and regenerative braking.
IGC13T120T8LX1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- TrenchStop™
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Active
- IGBT Type:
- Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):
- 1200 V
- Current - Collector (Ic) (Max):
- -
- Current - Collector Pulsed (Icm):
- 30 A
- Vce(on) (Max) @ Vge, Ic:
- 2.07V @ 15V, 8A
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- -
- Test Condition:
- -
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
IGC13T120T8LX1SA1 FAQ
1.How can I place an order for IGC13T120T8LX1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IGC13T120T8LX1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IGC13T120T8LX1SA1 reliable?
The price and inventory of IGC13T120T8LX1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGC13T120T8LX1SA1 is usually 5 days.
3.What payment methods are accepted for IGC13T120T8LX1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGC13T120T8LX1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IGC13T120T8LX1SA1?
IGC13T120T8LX1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IGC13T120T8LX1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IGC13T120T8LX1SA1?
For technical support, including IGC13T120T8LX1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGC13T120T8LX1SA1 requirements.
6.How does Aetrix verify that IGC13T120T8LX1SA1 is sourced from the original manufacturer or authorized distributors?
All IGC13T120T8LX1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGC13T120T8LX1SA1 meets industry standards.
7.What is the process for return or replacement of IGC13T120T8LX1SA1?
All IGC13T120T8LX1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGC13T120T8LX1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IGC13T120T8LX1SA1 part is unused and in its original packaging.
Return procedure for IGC13T120T8LX1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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