Infineon Technologies IGC18T120T8QX1SA1

Overview

IGC18T120T8QX1SA1 from Infineon Technologies is a 1200 V, 15 A trench-and-field-stop IGBT bare die optimized for high-speed switching in industrial power converters. It features 2.05 V typical V_CE(sat) at 15 A/15 V_GE, 875 pF typical C_ies, and 10 µs short-circuit withstand time under V_GE=15 V, V_CC=800 V, T_vj=150 °C - deployed in solar inverters and UPS modules.

For engineers reviewing the IGC18T120T8QX1SA1 datasheet, IGC18T120T8QX1SA1 pinout, IGC18T120T8QX1SA1 application, or IGC18T120T8QX1SA1 equivalent, key selection criteria include V_CE rating, short-circuit robustness, thermal resistance constraints in die-attach design, and gate drive compatibility with ±20 V_GE tolerance.

Technical Context

This IGBT4-generation bare die uses trench-gate and field-stop architecture to achieve low conduction and switching losses simultaneously. Its positive temperature coefficient of V_CE(sat) enables stable parallel operation without current-sharing resistors.

Rated for 1200 V blocking and 15 A DC collector current at T_C=100 °C, it supports pulsed operation up to 45 A and withstands 10 µs short circuits at 150 °C junction temperature - critical for fault-tolerant inverter stages.

Key Specifications

Pinout & Package

IGC18T120T8QX1SA1 is supplied as a bare die in sawn-on-foil format with 4.16 mm × 4.34 mm die size, 115 µm thickness, and photoimide passivation. No leadframe or molded package is included.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT die applications.

Compared with IKW15N120H3, IGC18T120T8QX1SA1 offers superior thermal performance in custom substrates but demands full die-attach validation; versus IGD18T120T8Q, it shares identical electrical behavior but differs in manufacturing lot control and test coverage scope.

Availability

IGC18T120T8QX1SA1 is available at Aetrix Electronics and suitable for solar inverters, uninterruptible power supplies, and industrial welding equipment requiring stable component supply and long-term industrial lifecycle support.

Supply support for IGC18T120T8QX1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

This part belongs to the TRENCHSTOP™ IGBT4 High Speed Chip product line, engineered specifically for high-efficiency, high-reliability industrial power conversion where switching speed, ruggedness, and thermal scalability are critical.

FAQ

Is IGC18T120T8QX1SA1 qualified for automotive applications?

No. Per Infineon's legal disclaimer in the datasheet, this bare die is not qualified to AEC-Q101 or any automotive reliability standard. It is intended exclusively for industrial power applications such as inverters and UPS systems where extended temperature operation and short-circuit robustness are prioritized over automotive qualification requirements.

What gate drive voltage is recommended for reliable operation?

A gate-emitter voltage of +15 V is recommended for nominal turn-on, with absolute maximum rating of ±20 V. Driving at +15 V ensures full saturation while maintaining margin against Miller-induced false turn-on; –5 V to –8 V is advised for active Miller clamping during turn-off in high-dV/dt environments.

Does this die include an integrated gate resistor?

No. The datasheet explicitly states "Integrated gate resistor rG: none." External gate resistors must be used to control switching speed, suppress oscillation, and limit peak gate current - typical values range from 10 Ω to 33 Ω depending on layout parasitics and desired dI/dt.

How should the bare die be handled to prevent ESD damage?

This device is classified as ESD-sensitive per MIL-STD-883. Handling requires grounded wrist straps, conductive foam storage, ionized air workstations, and avoidance of direct contact with gate or emitter pads. Visual inspection AQL is 0.65, and all post-assembly testing must verify RBSOA and SCSOA at package level.