Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IGC70T120T8RQ

Name: IGC70T120T8RQ
Brand: Infineon Technologies
SKU: IGC70T120T8RQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IGC70T120T8RQ

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: IGC70T120T8RQ.pdf

Description:: IGBT 1200V 75A DIE

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,766

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IGC70T120T8RQ from Infineon Technologies is a 1200 V, 75 A (TC = 100 °C) TRENCHSTOP™ IGBT4 high-speed bare die optimized for switching in power modules. It features trench & field-stop technology, 2.05 V typical V_CE(sat) at 15 V V_GE, 5.8 V typical V_GE(th), and 4400 pF typical C_ies at 25 V - enabling high-frequency operation in solar inverters and UPS systems.

For engineers reviewing the IGC70T120T8RQ datasheet, IGC70T120T8RQ pinout, IGC70T120T8RQ application, or IGC70T120T8RQ equivalent, key selection criteria include short-circuit withstand time (10 µs at 150 °C), positive temperature coefficient for stable paralleling, and wafer-level characterization of V_CE(sat), V_GE(th), and C_ies under defined thermal and bias conditions.

Technical Context

This bare die implements Infineon's fourth-generation TRENCHSTOP IGBT architecture with field-stop layer and trench gate structure to reduce conduction and switching losses simultaneously. Its 9.12 mm × 7.71 mm silicon die size and AlSiCu front-side metallization support high-current density and reliable wire bonding with ≤500 µm Al wires.

The device is characterized at wafer level per JEDEC JESD22-A114 (ESD), with static parameters measured at T_vj = 25 °C and dynamic behavior dependent on module-level implementation. Short-circuit ruggedness is validated at V_CC = 800 V, V_GE = 15 V, and T_vj = 150 °C for t_sc = 10 µs - not production-tested but verified by design and characterization.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V - rated blocking voltage for use in 1000–1200 V DC-link applications like solar string inverters
I_Cn	75 A at T_C = 100 °C - nominal continuous collector current when mounted in power modules with specified thermal resistance
V_CE(sat)	2.05 V typ. @ V_GE = 15 V, I_C = 75 A - determines conduction loss and junction temperature rise under rated load
V_GE(th)	5.8 V typ. @ I_C = 2.6 mA - defines minimum gate drive voltage needed for turn-on; enables robust noise immunity
C_ies	4400 pF typ. @ V_CE = 25 V, f = 1 MHz - influences gate drive power requirement and switching speed control
t_sc	10 µs @ V_GE = 15 V, V_CC = 800 V, T_vj = 150 °C - defines safe single-pulse short-circuit handling capability in module-level protection schemes
r_G	10 Ω integrated gate resistor - reduces gate oscillation risk and simplifies external gate driver design

Pinout & Package

IGC70T120T8RQ is supplied as a bare silicon die in sawn-on-foil format, with no leadframe or molded package. Die dimensions are 9.12 mm × 7.71 mm, thickness 115 µm, and front-side metallization of 3200 nm AlSiCu. Emitter (E), Gate (G), and test pad (T) locations are defined in the chip drawing.

Pin/Terminal	Circuit Role	Design Meaning
E (Emitter)	Main current return path	Large-area AlSiCu pad for low-inductance, high-current solder or epoxy die attach; multiple pads shown for redundancy
G (Gate)	Control terminal for channel modulation	0.811 mm × 1.31 mm AlSiCu pad sized for reliable Al wire bonding; integrated 10 Ω series resistance
T (Test pad)	Process monitoring / wafer-level test point	Non-functional in final application; must not be electrically contacted in module assembly

Key Features

Feature	Design Value
1200 V trench & field-stop IGBT structure	Enables efficient 1000–1200 V DC-link operation with reduced tail current and lower E_off vs. planar IGBTs
Positive V_CE(sat) temperature coefficient	Ensures current sharing stability during parallel operation without external current-balancing resistors
Wafer-level V_CE(sat)/V_GE(th)/C_ies characterization	Provides traceable baseline electrical data before module integration; supports early-stage design validation
ESD-sensitive classification (MIL-STD-883)	Requires controlled handling per Class 1A ESD protocols during die pick-and-place and module assembly

Applications

Solar String Inverters

Uninterruptible Power Supplies (UPS)

Use Scenario: DC-to-AC conversion in transformerless PV inverters with 1000 V+ DC input and 50/60 Hz output.

IC Role / Device Role / Timing Role: High-voltage switching element in three-phase inverter bridge legs, operating at 16–20 kHz PWM frequency.

Use Value: Low V_CE(sat) and fast switching reduce conduction and switching losses, improving system efficiency >98.5% at full load.

Use Scenario: Double-conversion online UPS delivering clean sine-wave AC output during grid failure.

IC Role / Device Role / Timing Role: Inverter-stage switch in 3-phase IGBT-based output stage, supporting bidirectional energy flow and fast transient response.

Use Value: 10 µs short-circuit rating enables robust fault handling during battery-mode overload events without desaturation circuit complexity.

High-Frequency Motor Drives

Industrial Welding Equipment

Use Scenario: Compact servo drives for CNC machines requiring precise torque control up to 20 kHz switching.

IC Role / Device Role / Timing Role: Half-bridge switch in compact power modules driving PMSM/BLDC motors with SVPWM modulation.

Use Value: Positive temperature coefficient allows direct paralleling of multiple dies in same module for higher current capacity without thermal runaway.

Use Scenario: Inverter-based arc welding units with rapid current ramping (≥100 A/ms) and high-duty-cycle operation.

IC Role / Device Role / Timing Role: Primary switching device in resonant or hard-switched inverter topology delivering pulsed DC welding current.

Use Value: 225 A pulsed collector current rating supports peak weld currents while maintaining <175 °C virtual junction temperature under forced cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IGC70T120T6Q	Same 1200 V/75 A rating but 6.0 Ω integrated gate resistor (vs. 10 Ω); slightly higher V_CE(sat) (2.15 V typ.)	Better suited for slower switching (<10 kHz) where gate drive loss is critical and E_off less constrained	Select when optimizing for gate driver power consumption over switching speed
IGC80T120T8RQ	Higher 80 A I_Cn rating, same 10 Ω r_G, larger die (9.8 mm × 8.2 mm), 2.10 V V_CE(sat) typ.	Targets higher-power modules (e.g., 50–75 kW inverters) requiring greater current headroom and thermal margin	Select when system derating or long-life reliability demands >15% current margin at T_C = 100 °C

Compared with IGC70T120T6Q and IGC80T120T8RQ, the IGC70T120T8RQ balances gate resistance, saturation voltage, and die size for mid-power (25–45 kW) high-frequency applications where switching loss, paralleling stability, and module footprint are co-optimized.

Availability

IGC70T120T8RQ is available at Aetrix Electronics and suitable for solar inverters, uninterruptible power supplies, and industrial welding equipment requiring stable component supply across multi-year production cycles and module requalification programs.

Supply support for IGC70T120T8RQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and manufacturing infrastructure.

This die belongs to the TRENCHSTOP™ IGBT4 family, engineered specifically for high-efficiency, high-reliability power modules in renewable energy and industrial motor control applications.

FAQ

Is IGC70T120T8RQ qualified for automotive applications?

No. The datasheet explicitly states this product is not qualified per AEC-Q101. It is intended for industrial and renewable energy applications only. Automotive-grade alternatives require separate qualification documentation and are not interchangeable without full revalidation.

What is the recommended gate drive voltage range?

The absolute maximum gate-emitter voltage is ±20 V, but the device is characterized and optimized for V_GE = +15 V (turn-on) and –5 V to –10 V (turn-off). Operating outside this range risks premature wear-out or threshold shift due to hot-carrier injection.

Can IGC70T120T8RQ be used without a module housing?

No. As a bare die, it requires mounting into a power module with appropriate thermal interface, electrical isolation, and mechanical protection. Direct PCB mounting is not supported - no solderable terminals or package leads are provided.

How is short-circuit ruggedness validated?

Short-circuit capability (t_sc = 10 µs) is verified via design simulation and wafer-level characterization under V_GE = 15 V, V_CC = 800 V, and T_vj = 150 °C - not 100% production tested. Module-level validation of RBSOA and SCSOA remains the customer's responsibility per Infineon's application note guidance.

IGC70T120T8RQ Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Discontinued at Digi-Key

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: -

Current - Collector Pulsed (Icm):: 225 A

Vce(on) (Max) @ Vge, Ic:: 2.42V @ 15V, 75A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

IGC70T120T8RQ FAQ

1.How can I place an order for IGC70T120T8RQ through Aetrix?

Please submit a Request for Quotation (RFQ) for IGC70T120T8RQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGC70T120T8RQ reliable?

The price and inventory of IGC70T120T8RQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGC70T120T8RQ is usually 5 days.

3.What payment methods are accepted for IGC70T120T8RQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGC70T120T8RQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGC70T120T8RQ?

IGC70T120T8RQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGC70T120T8RQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGC70T120T8RQ?

For technical support, including IGC70T120T8RQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGC70T120T8RQ requirements.

6.How does Aetrix verify that IGC70T120T8RQ is sourced from the original manufacturer or authorized distributors?

All IGC70T120T8RQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGC70T120T8RQ meets industry standards.

7.What is the process for return or replacement of IGC70T120T8RQ?

All IGC70T120T8RQ units undergo pre-shipment inspection (PSI). If there is an issue with IGC70T120T8RQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGC70T120T8RQ part is unused and in its original packaging.

Return procedure for IGC70T120T8RQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…