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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IGC70T120T8RQX1SA1

Name: IGC70T120T8RQX1SA1
Brand: Infineon Technologies
SKU: IGC70T120T8RQX1SA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGC70T120T8RQX1SA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: IGC70T120T8RQX1SA1.pdf

Description:: IGBT CHIP

Quantity:: RFQ Add To RFQ list

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Inventory:3,126

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Product details

Overview

IGC70T120T8RQX1SA1 from Infineon Technologies is a 1200 V, 75 A (T_C = 100 °C) TRENCHSTOP™ IGBT4 high-speed bare die optimized for medium-power industrial modules. It features trench & field-stop technology, 2.05 V typical V_CE(sat) at 15 V V_GE, 5.8 V typical V_GE(th), and 4400 pF typical C_ies, enabling high-frequency switching in solar inverters and UPS systems.

For engineers reviewing the IGC70T120T8RQX1SA1 datasheet, IGC70T120T8RQX1SA1 pinout, IGC70T120T8RQX1SA1 application, or IGC70T120T8RQX1SA1 equivalent, key selection criteria include V_CE rating, short-circuit withstand time (10 µs @ 150 °C), positive temperature coefficient for parallel operation, and wafer-level test coverage limitations requiring package-level RBSOA/SCSOA validation.

Technical Context

This bare die implements Infineon's fourth-generation TRENCHSTOP IGBT architecture with integrated 10 Ω gate resistor and photoimide passivation. Its 9.12 mm × 7.71 mm silicon area supports high current density while maintaining low switching losses and thermal stability up to 175 °C junction temperature.

The device uses AlSiCu front-side metallization and Ni/Ag backside metallization for reliable solder bonding. Gate and emitter pads are defined per chip drawing (G/E/T layout), with no dedicated collector terminal - collector contact is made via backside metal, requiring electrically conductive epoxy or soft solder die attach.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE Rating	1200 V - Supports DC bus voltages up to 800 V in 3-level NPC inverters with margin
I_C,n (T_C = 100 °C)	75 A - Rated continuous collector current when mounted in power module with specified thermal resistance
V_CE(sat) (typ.)	2.05 V @ 15 V V_GE, 75 A - Determines conduction loss and thermal load in hard-switched topologies
V_GE(th) (typ.)	5.8 V - Enables robust noise immunity and predictable turn-on threshold across temperature
t_sc	10 µs @ V_GE = 15 V, V_CC = 800 V, T_vj = 150 °C - Defines short-circuit protection window for driver design
C_ies (typ.)	4400 pF @ 25 V, 1 MHz - Impacts gate drive power and EMI behavior in high-dV/dt applications
r_G	10 Ω - Integrated gate resistor reduces external component count and improves layout consistency

Pinout & Package

IGC70T120T8RQX1SA1 is supplied as a bare die in sawn-on-foil format with 9.12 mm × 7.71 mm silicon area, 115 µm thickness, and 200 mm wafer origin. Collector connection is via backside Ni/Ag metallization; gate and emitter terminals are front-side AlSiCu pads per chip drawing.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	0.811 mm × 1.31 mm Al pad - Accepts standard Al wire bonding; requires <20 V absolute max gate voltage
E	Emitter	Multiple rectangular Al pads - Serves as main current return path and reference for gate drive
T	Test Pad	Non-functional probe point - Not intended for circuit connection or wire bonding

Key Features

Feature	Design Value
Positive V_CE(sat) temperature coefficient	Enables stable current sharing in paralleled configurations without external ballasting resistors
Trench & field-stop structure	Reduces tail current and switching losses vs. planar IGBTs, improving efficiency in 10–20 kHz PWM drives
Integrated 10 Ω gate resistor	Minimizes gate loop inductance sensitivity and simplifies gate driver PCB layout
ESD-sensitive handling (MIL-STD-883)	Requires grounded workstations and ionized air during assembly to prevent latent gate oxide damage

Applications

Solar Inverter Stage

UPS Inverter Output

Use Scenario: Three-phase NPC topology converting 1000 V DC input to 400 V AC grid output at 16 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side/low-side switching element in active NPC leg; handles bidirectional reactive power flow.

Use Value: Low V_CE(sat) and fast switching reduce conduction + switching losses by >12% vs. prior-gen IGBT dies at 150 °C junction temp.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC during mains failure with <10 ms transfer time.

IC Role / Device Role / Timing Role: Final-stage inverter switch managing battery-to-AC conversion under dynamic load transients.

Use Value: 10 µs short-circuit rating enables deterministic fault response with standard DESAT detection, eliminating need for external desat diodes.

Industrial Welding Inverter

Medium-Voltage Motor Drive

Use Scenario: IGBT-based inverter supplying 20–100 kHz square-wave current to welding transformer secondary.

IC Role / Device Role / Timing Role: Primary-side switching device controlling energy delivery pulse width and frequency.

Use Value: Positive temperature coefficient allows direct paralleling of two dies per switch position, increasing current capacity to 150 A without thermal runaway risk.

Use Scenario: 400–690 V AC motor drive for HVAC compressors and pumps operating at 4–8 kHz carrier frequency.

IC Role / Device Role / Timing Role: Main inverter switch in 6-pack module configuration driving three-phase induction motor.

Use Value: 175 °C max virtual junction temperature supports compact heatsink designs in space-constrained enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IGC70T120T4RQX1SA1	Same die size and V_CE, but lower V_CE(sat) (1.95 V typ.) and reduced t_sc (6 µs)	Better efficiency in continuous conduction mode; less robust under short-circuit stress	Select when system prioritizes conduction loss over fault tolerance
IGC80T120T8RQX1SA1	Higher I_C,n (80 A), larger die (9.7 mm × 8.2 mm), identical V_CE(sat) and t_sc	Supports higher power density modules; requires revised thermal interface design	Select when upgrading module current rating without changing gate drive or protection logic

Compared with IGC70T120T4RQX1SA1, this part trades marginal conduction loss reduction for significantly improved short-circuit ruggedness; compared with IGC80T120T8RQX1SA1, it offers identical ruggedness at lower cost and smaller footprint where 75 A suffices.

Availability

IGC70T120T8RQX1SA1 is available at Aetrix Electronics and suitable for solar inverters, uninterruptible power supplies, and industrial welding equipment requiring stable component supply and wafer-level traceability.

Supply support for IGC70T120T8RQX1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to the TRENCHSTOP™ IGBT4 family, engineered specifically for high-efficiency, high-reliability industrial power conversion modules operating up to 175 °C junction temperature.

FAQ

Is IGC70T120T8RQX1SA1 qualified for automotive applications?

No. This bare die is not qualified to AEC-Q101 standards and lacks automotive-grade process controls, test coverage, and reliability reporting. It is intended exclusively for industrial and renewable energy applications where AEC qualification is not required.

What is the recommended die attach method for this IGBT?

Infineon specifies electrically conductive epoxy glue or soft solder for die attachment. The Ni/Ag backside metallization requires controlled reflow to preserve the Ni layer integrity - full consumption of Ni during soldering risks intermetallic formation and bond-line voiding.

Does this die include an integrated freewheeling diode?

No. IGC70T120T8RQX1SA1 is a standalone IGBT die without an integrated body diode. External anti-parallel diodes must be used in bridge configurations, selected for matching reverse recovery characteristics and thermal coupling.

Can this die be used in SiC hybrid modules?

No. Its silicon-based TRENCHSTOP IGBT4 structure is incompatible with SiC co-packaging requirements. Hybrid modules require matched thermal expansion coefficients, gate drive voltage compatibility, and shared short-circuit behavior - none of which are supported by this die's design or characterization.

IGC70T120T8RQX1SA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: Die

Packaging:: Bulk

Product Status:: Discontinued at Digi-Key

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 75 A

Current - Collector Pulsed (Icm):: 225 A

Vce(on) (Max) @ Vge, Ic:: 2.42V @ 15V, 75A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

IGC70T120T8RQX1SA1 FAQ

1.How can I place an order for IGC70T120T8RQX1SA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGC70T120T8RQX1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGC70T120T8RQX1SA1 reliable?

The price and inventory of IGC70T120T8RQX1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGC70T120T8RQX1SA1 is usually 5 days.

3.What payment methods are accepted for IGC70T120T8RQX1SA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGC70T120T8RQX1SA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGC70T120T8RQX1SA1?

IGC70T120T8RQX1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGC70T120T8RQX1SA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGC70T120T8RQX1SA1?

For technical support, including IGC70T120T8RQX1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGC70T120T8RQX1SA1 requirements.

6.How does Aetrix verify that IGC70T120T8RQX1SA1 is sourced from the original manufacturer or authorized distributors?

All IGC70T120T8RQX1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGC70T120T8RQX1SA1 meets industry standards.

7.What is the process for return or replacement of IGC70T120T8RQX1SA1?

All IGC70T120T8RQX1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGC70T120T8RQX1SA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGC70T120T8RQX1SA1 part is unused and in its original packaging.

Return procedure for IGC70T120T8RQX1SA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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