Infineon Technologies IGC99T120T8RQX1SA1

Overview

IGC99T120T8RQX1SA1 from Infineon Technologies is a 1200 V, 100 A (T_C = 100 °C) TRENCHSTOP™ IGBT4 high-speed bare die optimized for low- and medium-power power modules. It features trench & field-stop technology, 2.05 V typical V_CE(sat) at 100 A/15 V, 7.5 Ω integrated gate resistor, and 10 µs short-circuit withstand time at 150 °C. Used in solar inverters, UPS, welding equipment, and high-frequency motor drives.

For engineers reviewing the IGC99T120T8RQX1SA1 datasheet, IGC99T120T8RQX1SA1 pinout, IGC99T120T8RQX1SA1 application, or IGC99T120T8RQX1SA1 equivalent, key selection criteria include V_CE rating, V_CE(sat) at rated current, short-circuit robustness, thermal resistance constraints in module integration, and gate drive compatibility with 15 V logic-level signals.

Technical Context

This IGBT die employs TRENCHSTOP™ IGBT4 architecture with field-stop layer and trench-gate structure to achieve low conduction and switching losses simultaneously. Its positive temperature coefficient of V_CE(sat) enables stable parallel operation without current-sharing resistors.

The device integrates a 7.5 Ω gate resistor on-die to dampen gate oscillation and reduce external component count. Short-circuit capability is characterized at V_GE = 15 V, V_CC = 800 V, and T_vj = 150 °C for 10 µs - a design-critical parameter for protection circuitry timing in inverter leg designs.

Key Specifications

Pinout & Package

IGC99T120T8RQX1SA1 is supplied as a bare die in sawn-on-foil format, with no leadframe or molded package. Die size is 9.50 mm × 10.35 mm, thickness 115 µm, and features aluminum emitter pads and a 1.31 mm × 0.811 mm aluminum gate pad. A test pad (T) is present but not intended for electrical connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT die applications.

Compared with IGC99T120T8RQX1SA1, SA2 offers identical electrical behavior with minor mechanical handling differences, while SB1 delivers measurable thermal improvement in sintered modules but requires process requalification - neither is drop-in compatible without assembly validation.

Availability

IGC99T120T8RQX1SA1 is available at Aetrix Electronics and suitable for solar inverters, uninterruptible power supplies, and industrial welding equipment requiring stable component supply, wafer-level traceability, and long-term production continuity.

Supply support for IGC99T120T8RQX1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This part belongs to the TRENCHSTOP™ IGBT4 die family, engineered specifically for high-efficiency, high-reliability power modules in renewable energy and industrial motor control applications.

FAQ

Is IGC99T120T8RQX1SA1 qualified to AEC-Q101?

No. Per Infineon's official datasheet Rev. 2.0 (08.02.2016), this bare die is explicitly stated as not qualified to AEC-Q101 or any automotive reliability standard. It is intended for industrial and renewable energy applications only.

What is the maximum allowable gate-emitter voltage during operation?

The absolute maximum V_GE is ±20 V, as specified in the Maximum Ratings table. Operation beyond ±15 V risks irreversible gate oxide damage; gate drive circuits must clamp transient excursions within this limit using Zener diodes or active clamping.

Can this die be used in press-fit or spring-contact modules?

No. The die uses standard aluminum wire-bondable pads and NiAg backside metallization designed for solder or sinter die attach. Press-fit or spring-contact interfaces lack sufficient mechanical compliance and thermal interface control for reliable operation at 175 °C junction temperature.

Does the integrated gate resistor affect Miller capacitance interaction?

Yes. The 7.5 Ω r_G(int) reduces effective gate loop Q-factor, damping resonance between C_ge and stray inductance. This mitigates Miller-induced false turn-on during high dV/dt commutation, especially critical in half-bridge configurations with common-source inductance.