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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IGD01N120H2BUMA1

Name: IGD01N120H2BUMA1
Brand: Infineon Technologies
SKU: IGD01N120H2BUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGD01N120H2BUMA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IGD01N120H2BUMA1.pdf

Description:: IGBT 1200V 3.2A TO252-3

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Product details

Overview

IGD01N120H2 from Infineon Technologies is a 1200V, 1A high-speed IGBT in PG-TO-252-3-1 package, optimized for soft-switching and resonant topologies including ZVS converters and lamp ballasts. It delivers 0.09mJ turn-off energy at Tj=25°C, exhibits temperature-stable V_CE(sat) (2.2–2.8V), and supports parallel switching with tight parameter distribution.

For engineers reviewing the IGD01N120H2 datasheet, IGD01N120H2 pinout, IGD01N120H2 application, or IGD01N120H2 equivalent, key selection criteria include E_off performance under ZVT conditions, thermal resistance (R_thJC = 4.5 K/W), gate charge (Q_gate = 8.6 nC), and safe operating area up to 1200V with 3.5A pulsed current capability.

Technical Context

This second-generation HighSpeed IGBT employs field-stop trench technology enabling low conduction loss and fast, controllable turn-off-critical for high-frequency resonant converters operating at 140kHz. Its optimized E_off (0.09mJ typ. @ 25°C, 0.09mJ @ 150°C) and low C_rss (3.4 pF) reduce voltage overshoot and gate drive losses during soft switching.

The device integrates a monolithic anti-parallel diode (IKP01N120H2 co-packaged per family design) and features ±20V gate-emitter rating, 150°C max junction temperature, and JEDEC2 qualification for industrial SMPS and lighting applications. Thermal behavior is stabilized by low R_thJC and predictable V_GE(th) drift across −40°C to +150°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200V - Withstands full DC bus in 800V-class ZVS converters with margin for transient overvoltage.
I_C	1A continuous - Rated for sustained operation in low-power resonant ballasts and auxiliary SMPS stages.
E_off	0.09 mJ @ Tj=25°C - Enables efficient zero-voltage turn-off in LLC and phase-shifted full-bridge topologies.
R_thJC	4.5 K/W - Allows direct heatsinking in compact SMD layouts; enables 28W dissipation at T_C=25°C.
Q_gate	8.6 nC - Matches standard 15V gate drivers with minimal RG sensitivity; reduces driver power demand.
C_iss/C_oss/C_rss	91.6 / 9.8 / 3.4 pF - Low reverse transfer capacitance minimizes Miller-induced false turn-on in high-dv/dt circuits.
V_CE(sat)	2.2–2.8V @ I_C=1A - Stable saturation voltage across temperature ensures predictable conduction loss in thermal cycling.

Pinout & Package

Package: PG-TO-252-3-1 (DPAK), surface-mount, isolated collector tab, RoHS-compliant Pb-free plating.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 15V/0V PWM signal; low Q_gate enables fast, low-loss switching with 241Ω external gate resistor.
Pin 2 (Collector)	High-side power output	Connected to DC bus or resonant tank node; electrically isolated tab allows direct PCB copper heatsinking.
Pin 3 (Emitter)	Power return & reference	Serves as common emitter node for IGBT and integrated diode; requires low-inductance layout to suppress voltage spikes.

Key Features

Feature	Design Value
Soft-switching optimization	E_off reduced by 44% vs. prior gen at ZVT; enables >95% efficiency in 100–300kHz LLC converters.
Parallel switching support	Tight V_GE(th) distribution (2.1–3.9V) and positive V_CE(sat) tempco ensure current sharing without external balancing.
Temperature-stable operation	V_CE(sat) drift <0.5 mV/°C and stable E_off across −40°C to +150°C enable robust thermal design.
JEDEC2 qualification	Validated for SMPS, lamp ballast, and ZVS-converter use cases-ensures reliability under real-world stress profiles.

Applications

LED Lamp Ballast

ZVS Resonant Converter

Use Scenario: High-efficiency electronic ballast for 20–40W LED tubes operating at 100–200kHz.

IC Role / Device Role / Timing Role: Main switch in half-bridge LLC topology; handles ZVS turn-on and controlled turn-off.

Use Value: Low E_off and stable V_CE(sat) maintain >93% efficiency across line/load/temperature variations.

Use Scenario: Auxiliary power supply in telecom rectifiers using phase-shifted full-bridge with 100kHz switching.

IC Role / Device Role / Timing Role: Upper-leg IGBT in soft-switched bridge; leverages low C_rss to avoid spurious turn-on.

Use Value: 3.4 pF C_rss and 8.6 nC Q_gate minimize gate drive loss and improve timing control fidelity.

Industrial SMPS

Induction Heating Driver

Use Scenario: 12V/2A standby supply in programmable logic controllers with wide ambient temperature range.

IC Role / Device Role / Timing Role: Primary-side switch in flyback converter; operates in discontinuous conduction mode.

Use Value: 150°C rated junction and 4.5 K/W R_thJC allow reliable operation without forced air cooling.

Use Scenario: Half-bridge switch in 500W induction cooktop driver operating at 20–50kHz with high dv/dt.

IC Role / Device Role / Timing Role: High-side switch handling repetitive 1200V blocking and 1A load current pulses.

Use Value: 1200V V_CE rating and 3.5A pulsed SOA support short-circuit robustness during coil detuning events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP1H120	1200V/1A, TO-220 package, higher E_off (0.13mJ), R_thJC = 5.0 K/W	Requires larger heatsink; less suitable for high-density SMD designs	Prefer when through-hole mounting and legacy footprint compatibility are required.
IXYS IXGN100N120B3	1200V/100A, TO-247, 3× gate charge (25nC), 10× higher current rating	Over-specified for 1A applications; excessive cost and drive complexity	Select only if future scalability to >5A loads is mandated in the BOM.

Compared with STGP1H120 and IXGN100N120B3, IGD01N120H2 offers optimal balance of SMD integration, ZVS-specific E_off, and thermal efficiency for sub-2A resonant converters-avoiding both under-engineering and unnecessary overhead.

Availability

IGD01N120H2 is available at Aetrix Electronics and suitable for LED lamp ballasts, ZVS resonant converters, and industrial SMPS requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for IGD01N120H2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with core expertise in high-voltage silicon and SiC devices.

The HighSpeed IGBT product line targets high-frequency resonant and soft-switching applications-designed specifically to replace older planar IGBTs in energy-efficient lighting, SMPS, and industrial power conversion.

FAQ

Is IGD01N120H2 pin-compatible with IGP01N120H2?

Yes-both share identical electrical characteristics and pinout (G-C-E), but IGD01N120H2 uses PG-TO-252-3-1 while IGP01N120H2 uses PG-TO-220-3-1. The DPAK variant enables surface-mount assembly and lower thermal resistance to PCB copper.

What gate resistor value is recommended for hard-switching operation?

A 241Ω gate resistor is specified in the datasheet for standard inductive-load testing (V_GE=15V/0V, T_j=150°C). For hard-switching, values between 100Ω and 330Ω balance switching speed, E_off, and voltage overshoot-verified via Figure 10 and Figure 14.

Does IGD01N120H2 include an integrated freewheeling diode?

No-the IGD01N120H2 is a discrete IGBT. However, Infineon's IKP01N120H2 1200V/1A diode is co-designed and commonly paired in the same application circuits, as referenced in the datasheet's "commutation diode" notes on page 3.

Can this IGBT operate reliably at 150°C junction temperature?

Yes-its maximum rated T_j is 150°C, and all key parameters (E_off, V_CE(sat), I_C) are characterized up to that temperature. Derating curves in Figures 3–4 confirm 1A continuous current and 28W dissipation remain valid at T_C=110°C.

IGD01N120H2BUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 3.2 A

Current - Collector Pulsed (Icm):: 3.5 A

Vce(on) (Max) @ Vge, Ic:: 2.8V @ 15V, 1A

Power - Max:: 28 W

Switching Energy:: 140µJ

Input Type:: Standard

Gate Charge:: 8.6 nC

Td (on/off) @ 25°C:: 13ns/370ns

Test Condition:: 800V, 1A, 241Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IGD01N120H2BUMA1 FAQ

1.How can I place an order for IGD01N120H2BUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGD01N120H2BUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGD01N120H2BUMA1 reliable?

The price and inventory of IGD01N120H2BUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGD01N120H2BUMA1 is usually 5 days.

3.What payment methods are accepted for IGD01N120H2BUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGD01N120H2BUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGD01N120H2BUMA1?

IGD01N120H2BUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGD01N120H2BUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGD01N120H2BUMA1?

For technical support, including IGD01N120H2BUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGD01N120H2BUMA1 requirements.

6.How does Aetrix verify that IGD01N120H2BUMA1 is sourced from the original manufacturer or authorized distributors?

All IGD01N120H2BUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGD01N120H2BUMA1 meets industry standards.

7.What is the process for return or replacement of IGD01N120H2BUMA1?

All IGD01N120H2BUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGD01N120H2BUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGD01N120H2BUMA1 part is unused and in its original packaging.

Return procedure for IGD01N120H2BUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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