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Infineon Technologies IGI60F1414A1LAUMA1

Part No.:
IGI60F1414A1LAUMA1
Manufacturer:
Infineon Technologies
Category:
Full Half-Bridge (H Bridge) Drivers
Package:
28-PowerTQFN
Datasheet:
AetrixIGI60F1414A1LAUMA1.pdf
Description:
IC HALF BRIDGE DRIVER 28TIQFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,753

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Product details

Overview

IGI60F1414A1LAUMA1 from Infineon is a CoolGaN™ Integrated Power Stage (IPS) combining two 140 mΩ / 600 V enhancement-mode GaN HEMTs in a half-bridge configuration with isolated gate drivers, supporting up to 3 MHz PWM switching, 47 ns propagation delay, and >300 V/ns CMTI - deployed in high-density AC/DC chargers and active-clamp flyback converters.

For engineers reviewing the IGI60F1414A1LAUMA1 datasheet, IGI60F1414A1LAUMA1 pinout, IGI60F1414A1LAUMA1 application, or IGI60F1414A1LAUMA1 equivalent, key selection criteria include isolated gate drive architecture, dual UVLO protection per supply rail, configurable turn-on/off speed via external RC, low-side open-source current sensing, and QFN-28 thermal performance for industrial SMPS designs.

Technical Context

The device integrates coreless transformer (CT)-based galvanic isolation between input logic and both high- and low-side driver outputs, enabling robust level-shifting without optocouplers or external isolators. Each driver features independent undervoltage lockout (UVLO) for VDDI (2.85 V), VDDL (6.5 V), and VDDH (6.5 V), ensuring safe startup and fault recovery.

It implements rail-to-rail gate drive with 1 A source / 2 A sink capability, optimized for CoolGaN HEMTs with 3.2 nC total gate charge. Input logic supports LV-TTL thresholds with 0.8 V hysteresis, and ENABLE pin forces both outputs low during power-up or fault conditions.

Key Specifications

ParameterValue and Actual Design Meaning
RDS(on)140 mΩ (typ.) per switch - enables low conduction loss at 600 V blocking voltage in medium-power topologies
Max Switching Frequency3 MHz - supports high-frequency resonant and flyback converters for compact magnetics and reduced EMI filter size
Propagation Delay47 ns (typ.) - ensures precise timing alignment between high- and low-side drivers for clean dead-time control
CMTI>300 V/ns - maintains signal integrity under fast dV/dt transients common in GaN-based hard-switched converters
Gate Drive Current1 A source / 2 A sink - sufficient to fully charge/discharge 3.2 nC GaN gate within nanoseconds without external buffers
Supply VoltagesVDDI = 3.3 V (±5%), VDDL/VDDH = 8 V (typ.) - single 8 V rail can generate all supplies via internal SLDO and bootstrap
Package Thermal ResistanceRθJA = 32 °C/W (typ., 4-layer board) - enables 10 W+ continuous power dissipation in 8 × 8 mm QFN-28

Pinout & Package

Delivered in thermally enhanced PG-TIQFN-28-1 package (8 × 8 mm, 0.5 mm pitch) with exposed thermal pad on underside for PCB-level heat transfer.

Pin/TerminalCircuit RoleDesign Meaning
INL / INHPWM input channelsLV-TTL-compatible logic inputs controlling low- and high-side switches independently; pulled down internally
ENABLEGlobal output enableActive-high safety control: forces both OUTH and OUTL low when deasserted, preventing shoot-through during initialization
OUTH / OUTLIsolated gate driver outputsRail-to-rail outputs driving GH and GL directly; 1 A source / 2 A sink capability matches GaN gate charge requirements
VDDH / VDDLFloating and ground-referenced driver suppliesVDDH referenced to SW node for high-side; VDDL referenced to SL for low-side - both typically 8 V with independent UVLO
SL / SW / DH / GH / GLPower terminalsSL = low-side source (open for shunt sensing); SW = half-bridge switching node; DH/GH/GL = drain/gate connections for respective GaN devices
VDDI / GNDI / SLDONInput stage supply interfaceVDDI = 3.3 V input logic supply; SLDON selects internal shunt LDO mode (connect to GNDI) or direct VDDI injection

Key Features

FeatureDesign Value
Coreless transformer isolationEnables galvanic separation between input logic and both driver outputs without external components or timing skew
Configurable switching speedExternal RC networks on GH/GL allow precise tuning of dV/dt and EMI profile without altering gate driver IC
Low-side open-source sensingSL terminal exposed separately to support accurate current measurement using external shunt resistor and isolated amplifier
Single-supply operationVDDI can be derived from VDDL via internal SLDO (SLDON = GNDI), eliminating need for dedicated 3.3 V rail
Dual UVLO protectionIndependent UVLO on VDDI, VDDL, and VDDH prevents partial operation and ensures coordinated startup/shutdown

Applications

Charger & Adapter Power SuppliesServer & Telecom SMPS

Use Scenario: 65–100 W USB-C PD adapters using active-clamp flyback topology.

IC Role / Device Role / Timing Role: Half-bridge IPS providing primary-side switching and isolated gate drive with sub-50 ns propagation matching.

Use Value: Enables >95% efficiency at 1 MHz+ switching, reducing transformer size by 40% vs. Si MOSFET solutions.

Use Scenario: 48 V input, 12 V output intermediate bus converter in telecom rectifiers.

IC Role / Device Role / Timing Role: High-frequency synchronous buck stage delivering regulated output with minimal dead-time uncertainty.

Use Value: 3 MHz capability allows use of <1 µH inductors and ceramic output capacitors, improving transient response and reliability.

LED Driver ModulesLow-Power Motor Control

Use Scenario: Dimmable constant-current LED driver for architectural lighting with analog/PWM dimming.

IC Role / Device Role / Timing Role: Primary-side switch in LLC resonant topology delivering ripple-free current with precise frequency control.

Use Value: Low RDS(on) and fast switching reduce conduction + switching losses, enabling fanless enclosure design.

Use Scenario: 24 V BLDC motor driver for HVAC blowers and industrial pumps.

IC Role / Device Role / Timing Role: Half-bridge power stage in 3-phase inverter leg with integrated gate drive and current sense interface.

Use Value: Open-source SL terminal simplifies phase current sampling without additional isolation components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar GaN half-bridge power stage applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
TI LMG3425R030650 V / 30 mΩ GaN FET with integrated driver; no isolated logic interface - requires external level shifterDesigned for discrete gate driver integration; lacks built-in CT isolation and dual UVLOSelect when system already uses isolated microcontroller outputs and demands lowest RDS(on) in <1 kW range
Transphorm TPH3205WS650 V / 50 mΩ GaN HEMT; discrete FET only - requires external isolated gate driver (e.g., UCC5350)No integrated driver or protection; full BOM responsibility for UVLO, timing, and isolationSelect when optimizing for cost-sensitive, lower-volume designs where layout flexibility outweighs integration benefits

Compared with LMG3425R030 and TPH3205WS, IGI60F1414A1LAUMA1 delivers verified system-level integration - including CT isolation, matched propagation delay, and unified thermal management - reducing design risk and layout iterations for industrial AC/DC and DC/DC converters.

Availability

IGI60F1414A1LAUMA1 is available at Aetrix Electronics and suitable for high-frequency AC/DC chargers, server power supplies, and LED driver modules requiring stable component supply, JEDEC-qualified industrial reliability, and consistent thermal performance across production batches.

Supply support for IGI60F1414A1LAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon carbide and gallium nitride power devices.

This part belongs to Infineon's CoolGaN™ Integrated Power Stage product line, engineered to simplify high-efficiency, high-frequency SMPS design by merging GaN switches and isolated gate drivers into a single qualified package for industrial and computing applications.

FAQ

What is the recommended minimum external bootstrap capacitor value for VDDH generation?

A minimum 100 nF X7R ceramic capacitor placed directly between VDDH and SW is required to sustain high-side driver operation during continuous conduction. For 3 MHz operation with 50% duty cycle, a 220 nF capacitor is recommended to limit voltage droop below 0.5 V under peak load, ensuring reliable UVLO margin and gate drive strength.

Can I operate IGI60F1414A1LAUMA1 with only a 5 V input supply?

Yes - VDDI can be supplied directly with 5 V, but the internal SLDO must be disabled by connecting SLDON to VDDI (not GNDI). The input logic remains functional, though VDDI UVLO threshold (2.85 V) still applies. Note that VDDL and VDDH must still be supplied at ~8 V for proper gate drive swing and GaN turn-on margin.

Does the device support adaptive dead-time control?

No - IGI60F1414A1LAUMA1 does not include internal dead-time generation or sensing. Dead time must be implemented externally in the controller (e.g., via complementary PWM with programmable delay) since INL and INH are fully independent inputs with no cross-coupling or blanking logic.

How is thermal performance affected if the exposed pad is not soldered to the PCB?

Without thermal pad connection, RθJA increases from 32 °C/W to >75 °C/W, limiting usable power to <3 W at 25 °C ambient. Full-rated 10 W+ operation requires minimum 90% solder coverage of the 6 × 6 mm exposed pad to a 4-layer PCB with ≥4 thermal vias (0.3 mm diameter, 1 mm pitch) connected to inner ground plane.

IGI60F1414A1LAUMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolGaN™
Package/Case:
28-PowerTQFN
Packaging:
Tape & Reel (TR)
Product Status:
Last Time Buy
Output Configuration:
Half Bridge (2)
Applications:
General Purpose
Interface:
Logic, PWM
Load Type:
Inductive, Resistive
Technology:
-
Rds On (Typ):
140mOhm LS, 140mOhm HS
Current - Output / Channel:
-
Current - Peak Output:
-
Voltage - Supply:
-
Voltage - Load:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Features:
-
Fault Protection:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TIQFN-28-1

IGI60F1414A1LAUMA1 FAQ

1.How can I place an order for IGI60F1414A1LAUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGI60F1414A1LAUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGI60F1414A1LAUMA1 reliable?

The price and inventory of IGI60F1414A1LAUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGI60F1414A1LAUMA1 is usually 5 days.

3.What payment methods are accepted for IGI60F1414A1LAUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGI60F1414A1LAUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGI60F1414A1LAUMA1?

IGI60F1414A1LAUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGI60F1414A1LAUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGI60F1414A1LAUMA1?

For technical support, including IGI60F1414A1LAUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGI60F1414A1LAUMA1 requirements.

6.How does Aetrix verify that IGI60F1414A1LAUMA1 is sourced from the original manufacturer or authorized distributors?

All IGI60F1414A1LAUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGI60F1414A1LAUMA1 meets industry standards.

7.What is the process for return or replacement of IGI60F1414A1LAUMA1?

All IGI60F1414A1LAUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGI60F1414A1LAUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGI60F1414A1LAUMA1 part is unused and in its original packaging.

Return procedure for IGI60F1414A1LAUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IGI60F1414A1LAUMA1 Tags

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