Infineon Technologies IGI60F2727A1LAUMA1

Overview

IGI60F2727A1LAUMA1 from Infineon is a CoolGaN™ Integrated Power Stage (IPS) comprising two 270 mΩ / 600 V enhancement-mode GaN HEMTs in half-bridge configuration, with isolated coreless-transformer-based gate drivers, 47 ns propagation delay, and 3 MHz PWM support - deployed in high-density AC/DC chargers and active-clamp flyback converters.

For engineers reviewing the IGI60F2727A1LAUMA1 datasheet, IGI60F2727A1LAUMA1 pinout, IGI60F2727A1LAUMA1 application, or IGI60F2727A1LAUMA1 equivalent, key selection criteria include isolated dual-driver timing mismatch (<1 ns), CMTI >300 V/ns, configurable turn-on/turn-off speed via external RC, and thermally enhanced QFN-28 (8 × 8 mm) package with low-side open-source for shunt-based current sensing.

Technical Context

The device integrates two matched GaN switches and dedicated isolated gate drivers on a single die, using on-chip coreless transformer (CT) technology for level-shifting and galvanic isolation between input, high-side, and low-side domains. Each driver provides rail-to-rail output with 1 A source / 2 A sink capability and independent UVLO monitoring for VDDI (3.3 V), VDDL (8 V), and VDDH (8 V).

It supports standard LV-TTL logic inputs with 0.8 V hysteresis, enables fast switching up to 3 MHz, and allows single-supply operation via internal SLDO activation (SLDON→GNDI) to derive VDDI from VDDL. The low-side open-source architecture permits direct connection of an external shunt resistor for accurate current sensing referenced to SL.

Key Specifications

Pinout & Package

Package: PG-TIQFN-28-1, 8 × 8 mm, exposed thermal pad (pin 28 = SW), RoHS-compliant, JEDEC-qualified for industrial applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar GaN half-bridge power stage applications.

Compared with IGI60F2727A1LAUMA1, the 200 mΩ and 140 mΩ variants offer lower conduction loss but increase gate drive loop sensitivity and thermal density - making the 270 mΩ version optimal for balanced 30–65 W designs where layout simplicity, EMI control, and thermal headroom are prioritized.

Availability

IGI60F2727A1LAUMA1 is available at Aetrix Electronics and suitable for AC/DC chargers, active-clamp flyback adapters, and LLC resonant LED drivers requiring stable component supply, JEDEC industrial qualification, and long-term GaN power stage availability.

Supply support for IGI60F2727A1LAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon carbide and gallium nitride power devices.

This part belongs to Infineon's CoolGaN™ Integrated Power Stage product line, designed specifically to simplify high-frequency GaN-based power conversion by merging matched GaN switches and isolated drivers in a thermally optimized package.

FAQ

What is the recommended gate resistor configuration for IGI60F2727A1LAUMA1 in a 1 MHz active-clamp flyback?

For 1 MHz operation, use R_g,on = 2.2 Ω and R_g,off = 4.7 Ω on both GH and GL pins to balance switching loss and EMI. Include 100 pF capacitors in parallel with each resistor to dampen ringing. Ensure gate loop inductance stays below 3 nH using short, wide traces and local 100 nF ceramic decoupling at VDDH/VDDL pins.

Can I operate IGI60F2727A1LAUMA1 with only one 8 V supply?

Yes - connect VDDL to 8 V, tie SLDON to GNDI to activate the internal SLDO, and route VDDI from the SLDO output. This generates regulated 3.3 V for the input logic stage. Confirm RVDDI = 1 kΩ is used between VDDL and VDDI to maintain ≥5 mA SLDO bias current under all conditions.

How does the low-side open-source (SL) pin enable accurate current sensing?

The SL pin provides a dedicated Kelvin connection to the low-side GaN source, separate from power return paths. When a shunt resistor is placed between SL and system GND, voltage across it reflects true load current without PCB trace IR drop - enabling cycle-by-cycle overcurrent protection with ±1.5% accuracy at 10 A.

What thermal derating applies when operating IGI60F2727A1LAUMA1 at 85°C ambient with 2-layer PCB?

With 2-layer 2 oz copper and 4 cm² exposed thermal pad soldered to internal ground plane, maximum continuous current must be reduced to 8.5 A (from 12 A at 25°C) to maintain junction temperature ≤150°C. Add thermal vias (≥12×0.3 mm) under the pad and consider forced airflow if power exceeds 45 W.