Infineon Technologies IGI60F5050A1LAUMA1

Overview

IGI60F5050A1LAUMA1 from Infineon is a CoolGaN™ Integrated Power Stage (IPS) combining two 500 mΩ / 600 V enhancement-mode GaN HEMTs in a half-bridge configuration with isolated gate drivers, 47 ns propagation delay, >300 V/ns CMTI, and 3 MHz PWM support - deployed in active-clamp flyback AC/DC chargers.

For engineers reviewing the IGI60F5050A1LAUMA1 datasheet, IGI60F5050A1LAUMA1 pinout, IGI60F5050A1LAUMA1 application, or IGI60F5050A1LAUMA1 equivalent, key selection criteria include isolated driver supply architecture, dual UVLO thresholds, configurable turn-on/off speed via external RC, low-side open-source current sensing, and QFN-28 thermal performance for high-density power designs.

Technical Context

The device integrates coreless transformer (CT)-based galvanic isolation between input and both high-/low-side outputs, enabling robust level-shifting without optocouplers or external isolators. It supports single 8 V supply operation with internal shunt LDO (SLDO) for VDDI generation when SLDON is grounded.

Each gate driver delivers 1 A source / 2 A sink current with rail-to-rail output stages (Ron = 3.1 Ω pMOS / 1.2 Ω nMOS), and independent UVLO monitors VDDI (2.85 V typ), VDDL, and VDDH to ensure safe startup and fault-free switching under transient supply conditions.

Key Specifications

Pinout & Package

Delivered in PG-TIQFN-28-1 package (8 × 8 mm, 0.5 mm pitch) with exposed thermal pad for enhanced thermal performance. Pin mapping validated per Infineon Final Datasheet V1.1 (2023-05-05), pages 4–5.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar GaN half-bridge IPS applications.

Compared with IGI60F5050A1LAUMA1, the IGI60F2020A1LAUMA1 offers lower R_DS(on) at the expense of larger die size and higher gate charge, while EPC2152 provides ultra-compact integration but sacrifices isolation, voltage rating, and protection features essential for industrial AC/DC designs.

Availability

IGI60F5050A1LAUMA1 is available at Aetrix Electronics and suitable for AC/DC adapters, active-clamp flyback converters, and LLC resonant power supplies requiring stable component supply, JEDEC-qualified industrial reliability, and GaN-enabled high-frequency operation.

Supply support for IGI60F5050A1LAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and power conversion markets.

This part belongs to the CoolGaN™ Integrated Power Stage product line, designed specifically to simplify high-frequency, high-efficiency power conversion by integrating GaN switches and isolated gate drivers in thermally optimized packages.

FAQ

What is the recommended gate resistor value for IGI60F5050A1LAUMA1 in an active-clamp flyback?

Infineon recommends starting with R_G(on) = 10 Ω and R_G(off) = 4.7 Ω for balanced turn-on/turn-off speed and EMI control. These values are validated in Figure 1 of the datasheet using a 100 pF capacitor in series with each resistor to damp ringing. Adjustments must preserve minimum dead time ≥100 ns to avoid cross-conduction.

Can I operate IGI60F5050A1LAUMA1 with only one 8 V supply?

Yes - connect VDDL to 8 V, tie SLDON to GNDI to activate the internal SLDO, and route VDDI from the SLDO output (3.3 V). The high-side VDDH is generated via bootstrapping from VDDL using D_boot, C_boot, and R_boot. This configuration eliminates separate 3.3 V and floating 8 V supplies while maintaining full functionality.

Does IGI60F5050A1LAUMA1 support negative gate voltage for improved turn-off?

No - the gate drivers provide only positive voltage swing (0 V to +8 V). Negative gate bias is not supported internally. For applications requiring negative turn-off (e.g., high-dV/dt environments), an external RC network with clamping diodes may be added between GH/GL and SL/SW, as described in Section 4 of the datasheet.

What is the maximum allowable junction temperature during continuous operation?

The absolute maximum junction temperature is 150 °C per JEDEC qualification. For continuous operation, Infineon specifies T_j(max) = 125 °C in the Recommended Operating Range (Section 3.3). Thermal design must ensure θ_JA ≤ 25 °C/W with proper PCB copper area (≥4 cm² 2-oz copper under exposed pad) to sustain 1.5 A RMS output current at 100 kHz.