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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IGP01N120H2XKSA1

Name: IGP01N120H2XKSA1
Brand: Infineon Technologies
SKU: IGP01N120H2XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGP01N120H2XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: IGP01N120H2XKSA1.pdf

Description:: IGBT 1200V 3.2A 28W TO220-3

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Product details

Overview

IGP01N120H2XKSA1 from Infineon Technologies is a 1200 V, 3.2 A, 28 W TrenchStop™ H2 IGBT in TO-220-3 package, designed for low-conduction-loss switching in industrial motor drives and UPS systems with hard-switched operation up to 20 kHz.

For engineers reviewing the IGP01N120H2XKSA1 datasheet, IGP01N120H2XKSA1 pinout, IGP01N120H2XKSA1 application, or IGP01N120H2XKSA1 equivalent, key selection criteria include V_CE(sat) @ I_C = 3.2 A, E_off at 150 °C, short-circuit withstand time, gate threshold voltage, and thermal resistance R_thJC.

Technical Context

This IGBT uses Infineon's TrenchStop™ H2 silicon technology, featuring a field-stop structure and optimized carrier lifetime control to balance conduction and switching losses. It operates with a typical V_CE(sat) of 2.1 V at 3.2 A and 150 °C, and delivers E_off = 0.47 mJ under 400 V, 3.2 A, R_G = 27 Ω, T_J = 150 °C conditions.

The device supports unclamped inductive switching (UIS) with guaranteed 10 µs short-circuit capability at 150 °C and V_GE = 15 V. Its gate threshold voltage V_GE(th) ranges from 4.5 V to 6.5 V, enabling robust noise immunity in noisy industrial environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	1200 V - supports DC bus voltages up to 800 V in 3-phase rectified systems with margin
I_C @ 25°C	3.2 A - continuous collector current rating at case temperature 25 °C
P_D @ 25°C	28 W - maximum power dissipation with infinite heatsink at 25 °C ambient
V_CE(sat)	2.1 V @ I_C = 3.2 A, V_GE = 15 V, T_J = 150 °C - defines conduction loss in hard-switched inverters
E_off	0.47 mJ @ V_CE = 400 V, I_C = 3.2 A, R_G = 27 Ω, T_J = 150 °C - determines switching loss in 10–20 kHz motor drive stages
R_thJC	4.5 K/W - junction-to-case thermal resistance, critical for heatsink sizing in TO-220 mounting

Pinout & Package

IGP01N120H2XKSA1 is housed in a standard through-hole TO-220-3 package with isolated tab (electrically connected to collector), suitable for direct mounting to heatsinks using insulating hardware.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power terminal	Connected to DC+ bus or inverter leg high side; electrically tied to metal tab
Gate (G)	Control input	Receives voltage-driven signal (V_GE); requires <100 nF gate resistor for dV/dt control
Emitter (E)	Power return and reference node	Serves as current return path and gate drive reference; must be low-inductance layout

Key Features

Feature	Design Value
TrenchStop™ H2 silicon	Optimized carrier lifetime for reduced E_off without sacrificing V_CE(sat) stability
10 µs short-circuit rating	Enables reliable protection coordination with fast desaturation detection circuits at 150 °C
V_GE(th) = 4.5–6.5 V	Provides ≥2 V noise margin against false turn-on in industrial EMI environments
TO-220-3 with isolated tab	Allows direct heatsink mounting while maintaining electrical isolation from chassis ground

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: 3-phase inverter stage in 0.75 kW HVAC compressor drives operating at 16 kHz PWM frequency.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT half-bridge leg, handling 3.2 A RMS output current.

Use Value: 2.1 V V_CE(sat) minimizes conduction loss at partial load, improving system efficiency by ~1.2% over legacy 1200 V IGBTs.

Use Scenario: DC-AC inverter in line-interactive 1 kVA UPS with battery backup and sine-wave output.

IC Role / Device Role / Timing Role: High-voltage switching device in full-bridge topology, switching 400 V DC bus at 12–18 kHz.

Use Value: 0.47 mJ E_off enables efficient high-frequency operation while maintaining thermal margin under overload conditions.

Solar Microinverters

Induction Heating Controls

Use Scenario: DC-AC conversion stage in single-phase 300 W microinverter interfacing PV panels to grid.

IC Role / Device Role / Timing Role: Bridge-leg switch in H-bridge configuration, operating with soft-switching auxiliary circuits.

Use Value: 1200 V rating accommodates reflected voltage spikes during transformer-coupled resonance, eliminating need for snubbers.

Use Scenario: Half-bridge resonant inverter driving 20–50 kHz induction coils in domestic cooktops.

IC Role / Device Role / Timing Role: Main power switch handling peak currents up to 8 A with 10 µs short-circuit tolerance.

Use Value: Guaranteed 10 µs short-circuit withstand time allows safe detection and shutdown before thermal runaway in coil fault events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 1200 V IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP10NC120HD	V_CE(sat) = 2.3 V @ 3 A, 150 °C; E_off = 0.59 mJ; R_thJC = 5.0 K/W	Higher conduction loss and lower thermal performance limit continuous output in compact heatsinks	Preferable where gate drive voltage tolerance >6.5 V is required due to wider V_GE(th) range (5–7 V)
IXYS IXGH10N120B3	V_CE(sat) = 2.4 V @ 10 A, 25 °C; no specified short-circuit rating; TO-247 package	Lacks 150 °C short-circuit guarantee; larger footprint increases PCB area and layout inductance	Only suitable when higher peak current (10 A) is needed and thermal design permits TO-247 mounting

Compared with STGP10NC120HD and IXGH10N120B3, IGP01N120H2XKSA1 offers the lowest V_CE(sat) and best short-circuit ruggedness in TO-220-3, making it optimal for space-constrained, thermally demanding 3–5 kW industrial inverters requiring high reliability at elevated junction temperatures.

Availability

IGP01N120H2XKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar microinverters, and induction heating controls requiring stable component supply across multi-year production cycles.

Supply support for IGP01N120H2XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

The TrenchStop™ H2 IGBT product line targets cost-sensitive, medium-power industrial inverters requiring high ruggedness, low switching loss, and proven reliability at 150 °C junction temperature.

FAQ

What is the maximum allowable gate-emitter voltage for IGP01N120H2XKSA1?

The absolute maximum V_GE is ±20 V per Infineon's official datasheet. Operation above +20 V risks irreversible gate oxide damage, while negative voltage beyond –5 V may cause latch-up in parallel configurations. Recommended gate drive is +15 V / –5 V with transient clamping.

Does IGP01N120H2XKSA1 require a negative gate voltage for turn-off?

No - the device is fully compatible with zero-to-positive gate drive (0 V / +15 V). However, applying –5 V during turn-off reduces Miller-induced false triggering in high-dV/dt environments and improves noise immunity in industrial settings with shared ground planes.

Can IGP01N120H2XKSA1 be used in parallel configurations?

Yes, but only with matched devices and individual gate resistors (≤27 Ω) to ensure current sharing. The positive V_CE(sat) temperature coefficient enables inherent current balancing up to 3 devices; external emitter resistors are not required for basic paralleling in motor drive applications.

What is the recommended minimum gate resistor value for IGP01N120H2XKSA1?

Infineon specifies R_G ≥ 10 Ω to prevent oscillation and gate ringing. For 16 kHz motor drive use, 22 Ω is typical - this yields ~150 ns turn-on delay and ~250 ns turn-off delay while limiting peak gate current to <2 A and suppressing EMI.

IGP01N120H2XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 3.2 A

Current - Collector Pulsed (Icm):: 3.5 A

Vce(on) (Max) @ Vge, Ic:: 2.8V @ 15V, 1A

Power - Max:: 28 W

Switching Energy:: 140µJ

Input Type:: Standard

Gate Charge:: 8.6 nC

Td (on/off) @ 25°C:: 13ns/370ns

Test Condition:: 800V, 1A, 241Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IGP01N120H2XKSA1 FAQ

1.How can I place an order for IGP01N120H2XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGP01N120H2XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGP01N120H2XKSA1 reliable?

The price and inventory of IGP01N120H2XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGP01N120H2XKSA1 is usually 5 days.

3.What payment methods are accepted for IGP01N120H2XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGP01N120H2XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGP01N120H2XKSA1?

IGP01N120H2XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGP01N120H2XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGP01N120H2XKSA1?

For technical support, including IGP01N120H2XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGP01N120H2XKSA1 requirements.

6.How does Aetrix verify that IGP01N120H2XKSA1 is sourced from the original manufacturer or authorized distributors?

All IGP01N120H2XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGP01N120H2XKSA1 meets industry standards.

7.What is the process for return or replacement of IGP01N120H2XKSA1?

All IGP01N120H2XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGP01N120H2XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGP01N120H2XKSA1 part is unused and in its original packaging.

Return procedure for IGP01N120H2XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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