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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IGP03N120H2XKSA1

Name: IGP03N120H2XKSA1
Brand: Infineon Technologies
SKU: IGP03N120H2XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGP03N120H2XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: IGP03N120H2XKSA1.pdf

Description:: IGBT 1200V 9.6A 62.5W TO220-3

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Product details

Overview

IGP03N120H2XKSA1 from Infineon Technologies is a 1200 V, 3 A high-speed IGBT optimized for soft-switching and resonant topologies including ZVS-converters and lamp ballasts. It features 0.15 mJ turn-off energy (E_off) at T_j = 25°C, 2.2–2.8 V collector-emitter saturation voltage (V_CE(sat)), and PG-TO-220-3-1 package with 2.0 K/W junction-to-case thermal resistance - enabling efficient thermal management in compact SMPS designs.

For engineers reviewing the IGP03N120H2XKSA1 datasheet, IGP03N120H2XKSA1 pinout, IGP03N120H2XKSA1 application, or IGP03N120H2XKSA1 equivalent, key selection criteria include its E_off-optimized switching behavior at 3 A, tight parameter distribution for parallel operation, temperature-stable V_CE(sat) up to 150°C, and JEDEC2 qualification for industrial power conversion.

Technical Context

This IGBT implements Infineon's second-generation HighSpeed 2 technology, engineered specifically for 1200 V resonant applications. Its low reverse transfer capacitance (C_rss = 7 pF) and optimized gate charge (Q_G = 22 nC) reduce switching losses and improve dv/dt immunity in ZVS circuits. The device integrates a co-packaged ultrafast diode (per IKP03N120H2 reference) and supports stable parallel switching due to positive temperature coefficient of V_CE(sat).

Thermal design is enabled by a low R_thJC of 2.0 K/W and validated safe operating area up to 9.9 A pulsed current. Switching timing (t_d(off) = 340 ns typ. at T_j = 150°C) and energy (E_off = 0.26 mJ at T_j = 150°C) are characterized under standardized inductive-load conditions (V_CC = 800 V, R_G = 82 Ω, L_σ = 180 nH).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V - supports DC bus voltages up to 800 V in ZVS converters with margin for voltage spikes.
I_C	3 A continuous - rated for sustained conduction in 100–150 kHz SMPS stages with derating above 100°C case temperature.
E_off	0.15 mJ at 25°C - enables low-loss turn-off in resonant topologies where tail current dominates loss budget.
V_CE(sat)	2.2–2.8 V - low on-state loss with minimal increase over temperature, supporting stable paralleling without external current-sharing resistors.
R_thJC	2.0 K/W - allows direct heatsink mounting with predictable thermal drop; enables 62.5 W max power dissipation at T_C = 25°C.
C_rss	7 pF - reduces Miller-induced gate oscillation and improves noise immunity in high-dv/dt resonant environments.
Q_G	22 nC - enables fast, controllable switching with standard 15 V gate drivers while limiting peak gate current.

Pinout & Package

IGP03N120H2XKSA1 is housed in a PG-TO-220-3-1 package: insulated plastic case with three leads, creepage distance ≥ 4 mm, and soldering temperature rated to 260°C for 10 s at 1.6 mm from case.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-voltage power output terminal	Connected to DC bus or transformer primary; electrically tied to metal tab for thermal conduction and EMI shielding.
Gate (G)	Control input for IGBT channel	Requires 15 V drive for full enhancement; ±20 V absolute max rating prevents oxide damage during transients.
Emitter (E)	Power return and signal reference node	Serves as common source for gate driver return path; internal emitter inductance is 7 nH - impacts switching waveform fidelity.

Key Features

Feature	Design Value
Soft-switching optimization	E_off reduced by 40% vs. prior gen at 3 A - directly lowers losses in ZVS/ZCS resonant converters.
Parallel switching capability	Tight V_CE(sat) distribution (±0.1 V) and positive tempco enable current sharing without external balancing resistors.
Temperature-stable behavior	V_CE(sat) drift < 0.3 V from 25°C to 150°C - maintains consistent conduction loss across full operating range.
JEDEC2 qualification	Validated for industrial SMPS and lamp ballast reliability - includes HTGB, HTRB, and temperature cycling per target application stress profiles.
Pb-free & RoHS compliant	Lead plating meets J-STD-020 reflow profile - supports lead-free assembly without solder joint reliability compromise.

Applications

Lamp Ballast Control

ZVS Resonant Converter

Use Scenario: High-frequency electronic ballast driving HID or fluorescent lamps with dimming and end-of-life protection.

IC Role / Device Role / Timing Role: Main switch in half-bridge resonant inverter stage, operating at 25–100 kHz with zero-voltage turn-on.

Use Value: Low E_off and stable V_CE(sat) ensure consistent lamp power delivery and extended component lifetime under thermal cycling.

Use Scenario: Primary-side switch in telecom or server PSU using LLC topology with 300–400 V input and 12–48 V output.

IC Role / Device Role / Timing Role: Hard-commutated IGBT in resonant tank circuit, leveraging soft-switching to minimize switching loss at 100–300 kHz.

Use Value: Optimized C_rss and Q_G reduce gate drive loss and improve efficiency >94% at full load across line and load variation.

Industrial SMPS

Induction Heating Half-Bridge

Use Scenario: 1–3 kW industrial power supply for welding, plating, or laser drivers requiring high reliability and wide input range.

IC Role / Device Role / Timing Role: Main switching element in phase-shifted full-bridge or asymmetrical half-bridge configuration.

Use Value: 150°C T_j rating and 2.0 K/W R_thJC support forced-air cooling in space-constrained enclosures without derating penalties.

Use Scenario: Medium-frequency (20–100 kHz) resonant inverter for domestic or commercial induction cooktops.

IC Role / Device Role / Timing Role: High-side switch in half-bridge, handling repetitive 3–6 A peak currents with rapid polarity reversal.

Use Value: Tight parameter distribution ensures matched switching behavior between paired devices, minimizing circulating current imbalance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IGW03N120H2	Same die, PG-TO-247-3 package; R_thJC = 2.0 K/W but higher L_E (13 nH vs. 7 nH); identical electrical specs.	Better thermal performance in high-power heatsink mounts; less suitable for ultra-compact layouts due to larger footprint.	Select when board space permits and thermal interface resistance dominates system R_thJA.
IKP03N120H2	Includes integrated fast recovery anti-parallel diode; same V_CE/I_C/E_off, but higher V_F diode (2.2 V) and slightly higher C_oss.	Eliminates need for external diode in single-switch resonant circuits; adds ~0.5 W conduction loss at 3 A.	Select when diode integration simplifies layout and reduces BOM count, accepting minor efficiency trade-off.

Compared with IGW03N120H2 and IKP03N120H2, IGP03N120H2XKSA1 offers optimal balance of compact TO-220 form factor, lowest emitter inductance for clean switching waveforms, and cost-effective discrete-diode implementation - ideal for space-constrained, medium-power resonant SMPS.

Availability

IGP03N120H2XKSA1 is available at Aetrix Electronics and suitable for lamp ballasts, ZVS resonant converters, and industrial SMPS requiring stable component supply, long-term lifecycle support, and JEDEC2-qualified reliability.

Supply support for IGP03N120H2XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and SiC power devices for industrial and energy-efficient systems.

This device belongs to Infineon's HighSpeed 2 IGBT product line, designed explicitly for high-frequency resonant power conversion - emphasizing low E_off, soft-switching compatibility, and robust parallel operation in 1200 V applications.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G = 82 Ω for characterization, and Figure 10 shows t_f increases from 29 ns to 63 ns as R_G rises from 0 Ω to 150 Ω at T_j = 150°C. For hard-switching, R_G ≤ 100 Ω maintains t_f < 100 ns and avoids excessive E_off; for ZVS, R_G can be increased to 150 Ω to reduce gate drive loss without compromising soft-turn-on.

Can IGP03N120H2XKSA1 be used in parallel configurations?

Yes - it is explicitly qualified for parallel operation due to tight V_CE(sat) distribution (±0.1 V) and positive temperature coefficient. Layout must ensure matched gate loop inductance and symmetrical heatsinking; no external emitter resistors are required, but individual gate resistors (≤ 10 Ω difference) are recommended for transient matching.

Does this part include an integrated freewheeling diode?

No - IGP03N120H2XKSA1 is a discrete IGBT without an integrated diode. The companion IKP03N120H2 includes a co-packaged ultrafast diode. External diode selection (e.g., IDH08SG60C) must match 1200 V rating, 3 A average current, and < 50 ns reverse recovery time for resonant applications.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the continuous I_C rating drops to 3.9 A (per Table "Maximum Ratings"), and the pulsed I_Cpuls remains 9.9 A for short durations (tp limited by T_jmax). The SOA curve (Figure 2) confirms operation up to 1200 V × 3.9 A = 4.7 kW in linear region, but practical use is constrained by thermal limits and switching energy accumulation.

IGP03N120H2XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 9.6 A

Current - Collector Pulsed (Icm):: 9.9 A

Vce(on) (Max) @ Vge, Ic:: 2.8V @ 15V, 3A

Power - Max:: 62.5 W

Switching Energy:: 290µJ

Input Type:: Standard

Gate Charge:: 22 nC

Td (on/off) @ 25°C:: 9.2ns/281ns

Test Condition:: 800V, 3A, 82Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IGP03N120H2XKSA1 FAQ

1.How can I place an order for IGP03N120H2XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGP03N120H2XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGP03N120H2XKSA1 reliable?

The price and inventory of IGP03N120H2XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGP03N120H2XKSA1 is usually 5 days.

3.What payment methods are accepted for IGP03N120H2XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGP03N120H2XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGP03N120H2XKSA1?

IGP03N120H2XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGP03N120H2XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGP03N120H2XKSA1?

For technical support, including IGP03N120H2XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGP03N120H2XKSA1 requirements.

6.How does Aetrix verify that IGP03N120H2XKSA1 is sourced from the original manufacturer or authorized distributors?

All IGP03N120H2XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGP03N120H2XKSA1 meets industry standards.

7.What is the process for return or replacement of IGP03N120H2XKSA1?

All IGP03N120H2XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGP03N120H2XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGP03N120H2XKSA1 part is unused and in its original packaging.

Return procedure for IGP03N120H2XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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