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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IGP20N65F5XKSA1

Name: IGP20N65F5XKSA1
Brand: Infineon Technologies
SKU: IGP20N65F5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGP20N65F5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: IGP20N65F5XKSA1.pdf

Description:: IGBT TRENCH 650V 42A TO220-3

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Product details

Overview

IGP20N65F5XKSA1 from Infineon is a 650V, 20A high-speed trench-gate field-stop IGBT in TRENCHSTOP™ 5 technology, optimized for hard-switching and resonant topologies in industrial power converters. It delivers 1.6V V_CE(sat) at 20A/25°C, 48nC total gate charge, and 175°C maximum junction temperature in PG-TO220-3 package. Used in solar inverters, UPS systems, and welding equipment where efficiency and thermal robustness are critical.

For engineers reviewing the IGP20N65F5XKSA1 datasheet, IGP20N65F5XKSA1 pinout, IGP20N65F5XKSA1 application, or IGP20N65F5XKSA1 equivalent, key selection criteria include V_CE(sat) stability over temperature, switching energy (E_on/E_off) at 10A/400V, gate drive compatibility with ±20V rating, and thermal resistance R_th(j-c) = 1.2 K/W for heatsink interface design.

Technical Context

This IGBT employs field-stop trench gate architecture to minimize conduction and switching losses simultaneously. Its low Q_g (48 nC) and fast turn-off delay (165 ns typ. at 25°C) enable operation up to mid-to-high switching frequencies (e.g., 30–100 kHz) without excessive gate drive power.

The device integrates an internal emitter inductance of 7.0 nH and exhibits strong temperature stability: V_CE(sat) rises only from 1.60 V at 25°C to 1.90 V at 175°C, while E_off increases from 0.06 mJ to 0.11 mJ under identical test conditions (400V, 10A, 150°C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Withstands DC bus voltages up to 650V in boost, inverter, and PFC stages without derating.
I_C	20 A continuous - Rated collector current at T_C = 25°C; supports 10A continuous at T_C = 100°C per thermal derating curve.
V_CE(sat)	1.60 V @ 20A/25°C - Low conduction loss enables <1.6W dissipation at full rated current, reducing heatsink requirements.
Q_G	48.0 nC - Enables efficient gate driving with standard 1–2A peak drivers; reduces driver power consumption vs. legacy F4 devices.
t_d(off)	165 ns typ. @ 25°C - Fast turn-off supports high-frequency PWM control with minimal dead-time overhead.
R_th(j-c)	1.20 K/W - Allows direct mounting to heatsinks; enables 125W power dissipation at ΔT = 150K (T_j = 175°C, T_C = 25°C).
T_vj(max)	175°C - Supports operation in harsh environments (e.g., enclosed UPS cabinets, industrial welders) without thermal shutdown.

Pinout & Package

IGP20N65F5XKSA1 is housed in PG-TO220-3 package: insulated plastic case with 3 leads, 2.54 mm lead pitch, and screw-mount flange for mechanical and thermal attachment. Thermal pad on backside requires thermal interface material for heatsink coupling.

Pin/Terminal	Circuit Role	Design Meaning
1 (Collector)	Main power output terminal	Connected to high-side switch node; carries full load current and must be routed with low-inductance layout.
2 (Emitter)	Power return and gate reference	Serves as common reference for gate drive; internal emitter inductance (7.0 nH) affects switching waveform fidelity.
3 (Gate)	Control input	High-impedance MOS-controlled terminal; requires ≤±20V drive voltage and low-inductance gate loop to suppress ringing.

Key Features

Feature	Design Value
Low V_CE(sat) with temperature stability	1.60 V @ 25°C rising to only 1.90 V @ 175°C - Maintains efficiency across full operating range without active thermal compensation.
Optimized for SiC diode pairing	Fast tail-free turn-off and low E_off (0.06 mJ) - Minimizes reverse recovery stress when used with SiC Schottky diodes in boost PFC stages.
JEDEC-qualified reliability	Qualified per AEC-Q101 stress tests for industrial lifetime - Validated for >10 years operation at 175°C junction temperature in continuous duty.
Pb-free and RoHS-compliant	Lead-free plating and halogen-free molding compound - Meets global environmental compliance mandates without performance trade-offs.

Applications

Solar String Inverters

Uninterruptible Power Supplies (UPS)

Use Scenario: DC-AC inversion stage in 3–10 kW residential solar inverters operating at 30–50 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side IGBT in three-phase bridge; handles bidirectional power flow during MPPT and grid synchronization.

Use Value: Low E_ts (0.22 mJ) and stable V_CE(sat) reduce thermal cycling stress and improve inverter efficiency by ≥0.4% at 50% load.

Use Scenario: Online double-conversion UPS with battery backup, requiring zero-transfer-time switchover and high reliability.

IC Role / Device Role / Timing Role: Inverter-stage switching device in 10–20 kVA systems; operates continuously at 10–20 kHz with 100% duty cycle capability.

Use Value: 175°C T_vj(max) and JEDEC qualification ensure >15-year field life in temperature-controlled data center environments.

Industrial Welding Converters

Mid-Frequency Induction Heaters

Use Scenario: Primary-side IGBT in inverter-based arc welding machines delivering pulsed 20–60A output at 20–40 kHz.

IC Role / Device Role / Timing Role: Hard-switched main switch controlling transformer primary current; subjected to repetitive short-circuit events during arc initiation.

Use Value: Turn-off SOA rated to 60A at 650V/1µs ensures safe operation during arc short-circuits without desaturation protection.

Use Scenario: Resonant half-bridge in 50–150 kHz induction heating systems for metal hardening and brazing.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS)-assisted switch; benefits from low C_res (5 pF) and fast t_f (17 ns) to minimize switching loss at high frequency.

Use Value: Low C_ies (1200 pF) and optimized gate charge reduce driver losses and EMI generation in tightly regulated resonant tanks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP20NC60KD	600V rating, higher V_CE(sat) (1.8V), slower t_d(off) (220 ns), same TO-220 package	Limited to 600V DC bus; less suitable for 650V solar inverters or 400V+ UPS designs	Select when cost sensitivity outweighs 50V margin and switching speed requirements.
IXYS IXGN20N60A3	600V rating, higher Q_g (65 nC), higher E_off (0.12 mJ), TO-247 package	Requires larger footprint and higher gate drive power; better suited for lower-frequency, high-current motor drives	Prefer for ruggedized motor control where thermal mass matters more than switching speed.

Compared with STGP20NC60KD and IXGN20N60A3, IGP20N65F5XKSA1 offers superior voltage margin, lower switching loss, and tighter thermal resistance-making it optimal for compact, high-efficiency 650V industrial converters where board space and cooling are constrained.

Availability

IGP20N65F5XKSA1 is available at Aetrix Electronics and suitable for solar converters, uninterruptible power supplies, and welding converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IGP20N65F5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's TRENCHSTOP™ 5 high-speed IGBT product line, engineered specifically for efficiency-critical industrial power conversion systems operating above 20 kHz with stringent thermal and reliability demands.

FAQ

What gate resistor value is recommended for reliable switching?

A 32 Ω gate resistor is validated in the datasheet for 400V/10A inductive switching with r_G = 32 Ω, achieving balanced E_on/E_off and minimal overshoot. Lower values (10–22 Ω) improve speed but risk gate ringing; higher values (>47 Ω) increase switching loss and thermal stress. Layout parasitics must be minimized regardless of R_G choice.

Does IGP20N65F5XKSA1 include an integrated anti-parallel diode?

No, this part is a standalone IGBT in PG-TO220-3 package with no integrated freewheeling diode. External diode selection-especially SiC Schottky types-is required for inductive loads. The device's low tail current and fast fall time make it highly compatible with discrete SiC diodes in boost and inverter topologies.

How does junction temperature affect switching energy?

At 150°C, E_off increases from 0.06 mJ (25°C) to 0.11 mJ (+83%), while E_on rises from 0.16 mJ to 0.26 mJ (+63%). This temperature-dependent rise is documented in the datasheet's switching energy tables and must be included in thermal modeling for continuous high-load operation.

Is the PG-TO220-3 package electrically insulated?

Yes, the PG-TO220-3 package features an electrically insulated metal tab (plastic-isolated flange), enabling direct mounting to grounded heatsinks without additional insulating hardware. The insulation withstands ≥2500 V_AC per IEC 60747-9, verified in production testing.

IGP20N65F5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 42 A

Current - Collector Pulsed (Icm):: 60 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 20A

Power - Max:: 125 W

Switching Energy:: 160µJ (on), 60µJ (off)

Input Type:: Standard

Gate Charge:: 48 nC

Td (on/off) @ 25°C:: 20ns/165ns

Test Condition:: 400V, 10A, 32Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IGP20N65F5XKSA1 FAQ

1.How can I place an order for IGP20N65F5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGP20N65F5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGP20N65F5XKSA1 reliable?

The price and inventory of IGP20N65F5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGP20N65F5XKSA1 is usually 5 days.

3.What payment methods are accepted for IGP20N65F5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGP20N65F5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGP20N65F5XKSA1?

IGP20N65F5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGP20N65F5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGP20N65F5XKSA1?

For technical support, including IGP20N65F5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGP20N65F5XKSA1 requirements.

6.How does Aetrix verify that IGP20N65F5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IGP20N65F5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGP20N65F5XKSA1 meets industry standards.

7.What is the process for return or replacement of IGP20N65F5XKSA1?

All IGP20N65F5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGP20N65F5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGP20N65F5XKSA1 part is unused and in its original packaging.

Return procedure for IGP20N65F5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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