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Infineon Technologies IGP20N65H5XKSA1

Part No.:
IGP20N65H5XKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-220-3
Datasheet:
AetrixIGP20N65H5XKSA1.pdf
Description:
IGBT 650V 42A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:399

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Product details

Overview

IGP20N65H5XKSA1 from Infineon is a 650 V, 20 A high-speed trench-gate field-stop IGBT in TRENCHSTOP™ 5 technology, designed for hard-switching and resonant topologies in industrial power converters. It delivers 1.65 V VCE(sat) at 20 A and 25°C, 48 nC total gate charge, 175°C maximum junction temperature, and 156 ns turn-off delay under standard test conditions (400 V, 10 A, 32 Ω gate resistor).

For engineers reviewing the IGP20N65H5XKSA1 datasheet, IGP20N65H5XKSA1 pinout, IGP20N65H5XKSA1 application, or IGP20N65H5XKSA1 equivalent, key selection criteria include switching energy (0.23 mJ total at 25°C), thermal resistance (1.20 K/W j-c), low Qg, and JEDEC-qualified reliability for solar inverters, UPS, and welding equipment.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop architecture optimized for high-frequency operation up to several tens of kHz. Its low tail current and reduced Cres (5 pF) minimize switching losses in both hard-switched and ZVS/ZCS configurations.

The device integrates a monolithic anti-parallel diode with soft recovery characteristics, enabling efficient freewheeling without external diode addition. Gate threshold voltage (4.0 V typ.) and transconductance (24 S) support stable drive across temperature and load variations.

Key Specifications

Parameter Value and Actual Design Meaning
VCE 650 V - Withstands DC bus voltages up to 650 V in industrial AC/DC and DC/AC stages.
IC 20 A continuous - Rated collector current at TC = 25°C; derates to 21 A at TC = 100°C.
VCE(sat) 1.65 V @ 20 A, 25°C - Low conduction loss enables high efficiency in mid-power converters.
QG 48 nC - Enables fast, low-loss switching with moderate gate driver strength (e.g., 2–4 A peak).
td(off) 156 ns @ 25°C - Short turn-off delay supports >50 kHz operation in resonant topologies.
Tvj(max) 175°C - Extended junction temperature rating improves thermal headroom in compact designs.
Rth(j-c) 1.20 K/W - Enables direct heatsink mounting with predictable thermal performance.

Pinout & Package

IGP20N65H5XKSA1 is housed in PG-TO220-3 package - a through-hole, single-island, three-terminal plastic package with isolated collector tab for direct heatsink mounting and mechanical screw retention (M3, 0.6 Nm torque).

Pin/Terminal Circuit Role Design Meaning
Collector (C) Main power output terminal Connected to high-side switch node; electrically tied to metal tab for thermal and electrical path to heatsink.
Gate (G) Control input Receives PWM signal; requires 15 V nominal drive; sensitive to ESD and ringing due to low input capacitance (1200 pF).
Emiter (E) Power return and reference Serves as emitter reference for gate drive; must be low-inductance connection to minimize switching oscillation.

Key Features

Feature Design Value
Low switching energy 0.23 mJ total (Eon + Eoff) at 10 A/400 V/25°C - reduces heat generation in high-frequency SMPS and inverters.
Field-stop trench structure Optimized carrier lifetime control - achieves best-in-class trade-off between VCE(sat) and switching speed.
JEDEC qualification Qualified per JESD47 and JESD22 standards - ensures reliability in industrial environments with thermal cycling and humidity exposure.
Pb-free and RoHS compliant Lead-free plating on leads and solderable surfaces - meets global environmental compliance requirements without performance compromise.
Integrated freewheeling diode Monolithic anti-parallel diode with soft reverse recovery - eliminates need for discrete diode and reduces layout complexity.

Applications

Solar Converters Uninterruptible Power Supplies

Use Scenario: DC/AC inversion stage in string inverters operating at 16–32 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side IGBT switch in 3-phase inverter bridge, handling 20 A RMS output current.

Use Value: 1.65 V VCE(sat) and 0.23 mJ switching energy reduce thermal stress and improve system efficiency above 98%.

Use Scenario: Online double-conversion UPS inverter stage delivering clean 50/60 Hz sine wave under variable load.

IC Role / Device Role / Timing Role: Main power switch in full-bridge topology, supporting bidirectional energy flow during battery charging/discharging.

Use Value: 175°C Tvj(max) and robust SOA enable reliable operation during overload and short-circuit events.

Welding Converters Mid-to-High Frequency SMPS

Use Scenario: Inverter-based arc welding power supply with dynamic current control up to 200 A peak.

IC Role / Device Role / Timing Role: Primary-side switching element in resonant LLC or phase-shifted full-bridge topology.

Use Value: Low Cres (5 pF) and fast fall time (13 ns) minimize capacitive losses and improve ZVS initiation margin.

Use Scenario: Industrial server PSU or telecom rectifier operating at 100–200 kHz with tight efficiency targets.

IC Role / Device Role / Timing Role: High-efficiency switching device in active clamp forward or half-bridge configuration.

Use Value: 48 nC QG allows use of cost-effective gate drivers while maintaining <100 ns switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part Technical Difference Application Difference Selection Advice
STGP20NC60VD 600 V rating, higher VCE(sat) (1.8 V), larger QG (65 nC), TO-220FP package with insulated tab Lower voltage margin limits use in 650 V DC bus systems; better suited for 400 V industrial drives Select when insulation from heatsink is required and 600 V rating suffices.
IXYS IXGN20N60B3 600 V rating, higher Eoff (0.11 mJ), slower tf (45 ns), TO-247 package Higher switching loss and larger footprint reduce suitability for compact, high-frequency designs Prefer where legacy TO-247 layout compatibility is mandatory and thermal budget allows higher loss.

Compared with STGP20NC60VD and IXGN20N60B3, IGP20N65H5XKSA1 offers superior voltage rating, lower conduction and switching losses, and smaller thermal resistance-making it optimal for space-constrained, high-efficiency 650 V converter designs requiring long-term reliability.

Availability

IGP20N65H5XKSA1 is available at Aetrix Electronics and suitable for solar converters, uninterruptible power supplies, and welding converters requiring stable component supply, JEDEC-qualified reliability, and consistent parametric performance across production batches.

Supply support for IGP20N65H5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to Infineon's TRENCHSTOP™ 5 high-speed IGBT product line, engineered specifically for industrial power conversion systems demanding high efficiency, high switching frequency, and ruggedness under thermal and electrical stress.

FAQ

What is the maximum recommended gate-emitter voltage for IGP20N65H5XKSA1?

The absolute maximum DC gate-emitter voltage is ±20 V; transient peaks up to ±30 V (≤10 µs, duty cycle <1%) are permitted. Exceeding these limits risks permanent gate oxide damage. A 15 V nominal drive with clamping protection is recommended for reliable operation and optimal switching performance.

Does IGP20N65H5XKSA1 include an integrated freewheeling diode?

Yes, it integrates a monolithic anti-parallel diode with soft reverse recovery characteristics. This diode is co-packaged and electrically matched to the IGBT, eliminating the need for an external diode in most inverter and converter topologies while reducing layout parasitics and component count.

How does thermal resistance affect heatsink selection for this IGBT?

With Rth(j-c) = 1.20 K/W, the junction-to-case temperature rise is directly proportional to power dissipation. For example, at 63 W dissipation (TC = 100°C), ΔT = 75.6 K - meaning a heatsink must maintain case temperature ≤100°C under worst-case ambient and airflow conditions to stay within the 175°C Tvj limit.

Can IGP20N65H5XKSA1 replace older TRENCHSTOP™ 4 IGBTs in existing designs?

Yes - it is designed as a plug-and-play replacement for prior-generation devices like IGP20N65H3. Identical PG-TO220-3 footprint, compatible gate drive requirements (15 V), and improved VCE(sat) and switching energy allow drop-in upgrades that enhance efficiency without board redesign.

IGP20N65H5XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop®
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
42 A
Current - Collector Pulsed (Icm):
60 A
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 20A
Power - Max:
125 W
Switching Energy:
170µJ (on), 60µJ (off)
Input Type:
Standard
Gate Charge:
48 nC
Td (on/off) @ 25°C:
18ns/156ns
Test Condition:
400V, 10A, 32Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-1

IGP20N65H5XKSA1 FAQ

1.How can I place an order for IGP20N65H5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGP20N65H5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGP20N65H5XKSA1 reliable?

The price and inventory of IGP20N65H5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGP20N65H5XKSA1 is usually 5 days.

3.What payment methods are accepted for IGP20N65H5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGP20N65H5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGP20N65H5XKSA1?

IGP20N65H5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGP20N65H5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGP20N65H5XKSA1?

For technical support, including IGP20N65H5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGP20N65H5XKSA1 requirements.

6.How does Aetrix verify that IGP20N65H5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IGP20N65H5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGP20N65H5XKSA1 meets industry standards.

7.What is the process for return or replacement of IGP20N65H5XKSA1?

All IGP20N65H5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGP20N65H5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGP20N65H5XKSA1 part is unused and in its original packaging.

Return procedure for IGP20N65H5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IGP20N65H5XKSA1 Tags

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