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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IGP30N60H3XKSA1

Name: IGP30N60H3XKSA1
Brand: Infineon Technologies
SKU: IGP30N60H3XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGP30N60H3XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: IGP30N60H3XKSA1.pdf

Description:: IGBT TRENCH FS 600V 60A TO220-3

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Product details

Overview

IGP30N60H3XKSA1 from Infineon is a 600V, 30A high-speed trench-and-fieldstop IGBT optimized for switching frequencies up to 40 kHz in industrial power converters. It delivers 1.95 V V_CE(sat) at 30 A and 25°C, 0.44 mJ turn-off energy, and operates up to 175°C junction temperature. Used in welding inverters and UPS systems where low EMI and fast switching are critical.

For engineers reviewing the IGP30N60H3XKSA1 datasheet, IGP30N60H3XKSA1 pinout, IGP30N60H3XKSA1 application, or IGP30N60H3XKSA1 equivalent, key selection criteria include V_CE(sat) stability over temperature, short-circuit withstand time (5 µs), gate charge (165 nC), and thermal resistance (0.80 K/W junction-to-case).

Technical Context

This third-generation TRENCHSTOP™ IGBT integrates fieldstop layer and trench gate structure to simultaneously reduce conduction loss (low V_CE(sat)) and switching loss (low E_off, fast t_d(off) = 207 ns). Its 175°C max junction rating enables compact heatsink design in high-power density systems.

The device features low reverse transfer capacitance (C_res = 50 pF) and internal emitter inductance of 7.0 nH-critical for minimizing voltage overshoot and oscillation in hard-switched topologies. Gate threshold voltage (V_GE(th) = 4.1–5.7 V) ensures robust noise immunity while supporting standard 15 V gate drive.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - Maximum blocking voltage compatible with 400 V DC bus designs with 50% safety margin.
I_C	30 A continuous - Rated collector current at T_C = 100°C, defining thermal-limited output capability.
V_CE(sat)	1.95 V @ 30 A, 25°C - Low saturation voltage reduces conduction loss and improves efficiency in 1–20 kHz switching range.
E_off	0.44 mJ @ 400 V, 30 A - Quantified turn-off energy enabling accurate loss calculation for thermal modeling.
t_SC	5 µs @ V_GE = 15 V - Short-circuit withstand time supports basic fault protection without external desat detection.
R_th(j–c)	0.80 K/W - Junction-to-case thermal resistance determines minimum heatsink requirement for 175°C operation.
Q_G	165 nC - Total gate charge defines required gate driver peak current (e.g., >15 A for 10 ns rise time).

Pinout & Package

IGP30N60H3XKSA1 is housed in PG-TO220-3 package: insulated plastic case with three leads, mounting hole for M3 screw (0.6 Nm torque), and wave-solderable lead finish (260°C/10 s).

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main power output terminal	Connected to high-side switch node; carries full load current and must be routed with low-inductance layout.
Gate (G)	Control input	High-impedance MOS-controlled terminal requiring <100 nA leakage compliance and 165 nC total charge drive.
Emitter (E)	Power return and reference	Serves as common source for gate drive and current sense; internal 7.0 nH inductance affects switching waveform fidelity.

Key Features

Feature	Design Value
TRENCHSTOP™ technology	Enables simultaneous optimization of V_CE(sat) (1.95 V) and E_off (0.44 mJ), reducing total losses in medium-frequency converters.
175°C maximum junction temperature	Allows sustained operation under high ambient conditions without derating, reducing heatsink size by ~30% vs. 150°C-rated devices.
Low EMI generation	Controlled dV/dt and low C_res (50 pF) minimize radiated emissions-critical for CE-compliant industrial equipment.
Pb-free, halogen-free construction	RoHS-compliant plating and mold compound meet IPC-J-STD-609A Class 1 requirements for green manufacturing.
JEDEC-qualified reliability	Validated per JESD47 stress testing for industrial power control applications, including temperature cycling and HTRB.

Applications

Welding Inverters

Uninterruptible Power Supplies (UPS)

Use Scenario: High-frequency (15–40 kHz) DC-link switching in IGBT-based inverter stages for arc stability and dynamic response.

IC Role / Device Role / Timing Role: Main switching device in half-bridge configuration handling 30 A RMS output current at 400 V DC bus.

Use Value: 0.44 mJ E_off and 207 ns t_d(off) enable efficient 20 kHz operation with <1.5 W switching loss per device at rated load.

Use Scenario: Online double-conversion UPS systems requiring high efficiency (>95%) and fast transfer (<10 ms) during grid failure.

IC Role / Device Role / Timing Role: Inverter-stage IGBT delivering clean 50/60 Hz sine-wave output via PWM modulation.

Use Value: 175°C T_vj(max) and 0.80 K/W R_th(j–c) support compact thermal design while maintaining >10-year field reliability.

Solar Microinverters

Motor Drive Intermediate Stage

Use Scenario: DC–AC conversion in single-phase microinverters interfacing 600 V PV strings with grid-tied output.

IC Role / Device Role / Timing Role: High-side switch in H-bridge topology operating at variable frequency (3–15 kHz) with soft-switching assist.

Use Value: Low C_res (50 pF) and controlled tail current reduce voltage spikes during ZVS transitions, lowering snubber losses.

Use Scenario: DC-link chopper or brake circuit in HVAC and industrial motor drives handling regenerative energy.

IC Role / Device Role / Timing Role: Energy-dissipating switch activated during overvoltage events on 400–600 V DC bus.

Use Value: 5 µs short-circuit withstand time allows integration into active brake control loops without auxiliary desat detection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW30N60H3	Same die, co-packaged with anti-parallel diode in TO-247 package; higher R_th(j–c) (0.65 K/W) but larger creepage.	Preferred for designs requiring integrated freewheeling path and higher surge current tolerance (I_Cpuls = 120 A).	Select when diode co-location simplifies layout and thermal coupling is acceptable.
FGH30N60LSD	600 V, 30 A, 2.2 V V_CE(sat), 0.62 mJ E_off; slower t_d(off) (320 ns); TO-247-3L package with Kelvin emitter.	Better suited for high-current, lower-frequency (<10 kHz) motor drives where gate drive simplicity outweighs switching loss.	Choose if gate drive design favors Kelvin emitter architecture and system prioritizes ruggedness over efficiency.

Compared with IKW30N60H3 and FGH30N60LSD, IGP30N60H3XKSA1 offers lowest conduction loss and fastest switching in TO-220 form factor-ideal for space-constrained, medium-frequency industrial converters where discrete diode placement is feasible.

Availability

IGP30N60H3XKSA1 is available at Aetrix Electronics and suitable for uninterruptible power supplies, welding converters, and solar microinverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IGP30N60H3XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and qualification infrastructure.

This device belongs to Infineon's TRENCHSTOP™ High-Speed IGBT product line, engineered specifically for industrial switching applications demanding low-loss, high-reliability operation at 10–40 kHz.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies r_G = 10.5 Ω for characterization. For safe operation, gate resistance must limit peak gate current to ≤20 A while ensuring t_d(off) stays below 300 ns. At 15 V drive, r_G > 15 Ω increases switching loss significantly; typical design uses 10–12 Ω with negative turn-off bias to suppress Miller-induced false turn-on.

Does IGP30N60H3XKSA1 include an integrated anti-parallel diode?

No. IGP30N60H3XKSA1 is a standalone IGBT in PG-TO220-3 package with no integrated diode. The companion diode IKW30N60H3 is co-packaged in TO-247 but not present here. External fast-recovery or SiC Schottky diodes must be used for freewheeling paths.

How does V_CE(sat) change across temperature and current?

V_CE(sat) rises from 1.95 V at 25°C to 2.50 V at 175°C under 30 A load. This positive temperature coefficient improves current sharing in parallel configurations. At 60 A (pulsed), V_CE(sat) reaches ~2.40 V at 25°C, confirming linear conduction behavior up to rated limits.

Is this part suitable for use in automotive applications?

No. IGP30N60H3XKSA1 is qualified per JEDEC standards for industrial power control-not AEC-Q101. It lacks automotive-specific screening (e.g., HTOL, UHAST), and its 175°C rating targets industrial ambient, not under-hood automotive environments requiring extended temperature validation.

IGP30N60H3XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 2.4V @ 15V, 30A

Power - Max:: 187 W

Switching Energy:: 1.17mJ

Input Type:: Standard

Gate Charge:: 165 nC

Td (on/off) @ 25°C:: 18ns/207ns

Test Condition:: 400V, 30A, 10.5Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IGP30N60H3XKSA1 FAQ

1.How can I place an order for IGP30N60H3XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGP30N60H3XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGP30N60H3XKSA1 reliable?

The price and inventory of IGP30N60H3XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGP30N60H3XKSA1 is usually 5 days.

3.What payment methods are accepted for IGP30N60H3XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGP30N60H3XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGP30N60H3XKSA1?

IGP30N60H3XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGP30N60H3XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGP30N60H3XKSA1?

For technical support, including IGP30N60H3XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGP30N60H3XKSA1 requirements.

6.How does Aetrix verify that IGP30N60H3XKSA1 is sourced from the original manufacturer or authorized distributors?

All IGP30N60H3XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGP30N60H3XKSA1 meets industry standards.

7.What is the process for return or replacement of IGP30N60H3XKSA1?

All IGP30N60H3XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGP30N60H3XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGP30N60H3XKSA1 part is unused and in its original packaging.

Return procedure for IGP30N60H3XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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