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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IGP30N65F5XKSA1

Name: IGP30N65F5XKSA1
Brand: Infineon Technologies
SKU: IGP30N65F5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGP30N65F5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: IGP30N65F5XKSA1.pdf

Description:: IGBT TRENCH 650V 55A TO220-3

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Product details

Overview

IGP30N65F5XKSA1 from Infineon is a 650V, 30A high-speed TRENCHSTOP™ 5 IGBT in PG-TO220-3 package, optimized for hard-switching and resonant topologies in solar converters and UPS systems. It delivers 1.6V V_CE(sat) at 30A/25°C, 65nC total gate charge, and 175°C maximum junction temperature with JEDEC qualification.

For engineers reviewing the IGP30N65F5XKSA1 datasheet, IGP30N65F5XKSA1 pinout, IGP30N65F5XKSA1 application, or IGP30N65F5XKSA1 equivalent, key selection criteria include switching energy (0.11–0.50 mJ), thermal resistance (0.80 K/W j-c), and compatibility with SiC Schottky diodes in boost stages.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop technology to achieve low conduction loss (1.6V V_CE(sat)) and fast switching (td(off) = 170 ns typ. at 25°C). Its 9nC reverse transfer capacitance (C_res) and 1800pF input capacitance (C_ies) support high-frequency operation up to 100 kHz in hard-switched converters.

The device integrates a monolithic emitter structure with 7nH internal emitter inductance, enabling precise control of tail current and reducing EMI in mid-to-high frequency power stages. Gate threshold voltage (4.0V typ.) and transconductance (38 S) ensure stable drive margin across –40°C to +175°C operating range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Withstands DC bus voltages up to 650V in solar inverters and UPS designs without derating.
I_C	30 A continuous - Rated collector current at T_C = 25°C; supports 15A continuous at T_C = 100°C per thermal derating curve.
V_CE(sat)	1.6 V @ 30A/25°C - Low saturation voltage reduces conduction losses by ~25% vs. prior-generation F4 IGBTs.
Q_G	65 nC - Enables efficient gate driving with standard 1–2A peak gate drivers; minimizes driver power dissipation.
R_th(j-c)	0.80 K/W - Allows direct heatsink mounting with <1.2°C/W total thermal path for 188W P_tot at T_C = 25°C.
E_off	0.02–0.12 mJ - Low turn-off energy enables high-frequency operation while maintaining <100W switching loss at 50 kHz.
T_vj(max)	175°C - Supports extended lifetime in thermally constrained industrial enclosures with active cooling.

Pinout & Package

IGP30N65F5XKSA1 uses the PG-TO220-3 package: insulated plastic case with copper leadframe, 3-pin vertical through-hole mounting, and isolated collector tab for direct heatsink attachment.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Collector)	Main power output terminal	Electrically connected to heatsink via isolated metal tab; carries full load current and must be thermally coupled to heatsink.
Pin 2 (Gate)	Control input	High-impedance MOS-controlled terminal requiring <100nA leakage current; sensitive to ESD and requires RC snubber for noise immunity.
Pin 3 (Emitter)	Power return and reference node	Serves as common reference for gate drive and current sensing; internal emitter inductance (7nH) impacts switching waveform fidelity.

Key Features

Feature	Design Value
Low V_CE(sat) with high speed	1.6V @ 30A/25°C and 170ns t_d(off) - Balances conduction and switching loss for optimal efficiency in 20–100 kHz converters.
SiC diode co-packaging readiness	Optimized Q_G/C_res ratio and low tail current - Reduces reverse recovery stress when paired with 650V SiC Schottky diodes in PFC boost stages.
JEDEC-qualified reliability	Qualified per JESD47 and AEC-Q101 stress tests - Validated for 10+ year field life in industrial UPS and solar applications.
High-temperature operation	Rated up to 175°C junction temperature with stable V_GE(th) shift <±0.5V - Enables compact thermal design without forced air cooling.

Applications

Solar String Inverters

Uninterruptible Power Supplies

Use Scenario: DC-AC inversion stage in 3–10 kW residential solar inverters using two-level or three-level NPC topologies.

IC Role / Device Role / Timing Role: Main switching device in H-bridge or T-type inverter leg; operates at 16–40 kHz with sinusoidal PWM modulation.

Use Value: 0.11 mJ E_ts at 5A enables >98.5% inverter efficiency while maintaining thermal margin at 55°C ambient.

Use Scenario: Online double-conversion UPS with bidirectional AC-DC rectifier and DC-AC inverter stages.

IC Role / Device Role / Timing Role: Inverter-side IGBT in 6–12 kVA systems; switches at 8–20 kHz with soft-start and overload protection.

Use Value: 175°C T_vj(max) and 0.80 K/W R_th(j-c) allow sustained 100% load operation without fan derating in sealed cabinets.

Industrial Welding Converters

Mid-Frequency Induction Heaters

Use Scenario: Primary-side switching in IGBT-based inverter welders delivering 100–500A DC output with dynamic arc control.

IC Role / Device Role / Timing Role: High-current switching element in full-bridge topology; gated at 20–50 kHz with variable duty cycle for current regulation.

Use Value: 90A pulsed current rating and 0.35 mJ E_ts at 15A enable robust short-circuit handling during arc ignition transients.

Use Scenario: Resonant inverter stage in 20–100 kW induction heating systems operating at 20–80 kHz.

IC Role / Device Role / Timing Role: Half-bridge switch in series-resonant tank circuit; driven with zero-voltage switching (ZVS) timing.

Use Value: Low C_res (9pF) and fast fall time (10ns typ.) minimize dead-time losses and improve ZVS window stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW30H65DFB	650V/30A, V_CE(sat) = 1.75V, Q_G = 72nC, R_th(j-c) = 0.85 K/W	Higher conduction loss and slower switching (t_d(off) = 210 ns) - better suited for lower-frequency (<30 kHz) industrial motor drives.	Select when prioritizing ruggedness over efficiency in harsh EMI environments with less aggressive thermal constraints.
IXYS IXGN30N60B3	600V/30A, V_CE(sat) = 1.8V, Q_G = 58nC, R_th(j-c) = 0.95 K/W, max T_vj = 150°C	Lower voltage rating and reduced thermal capability - limits use to 400V DC bus applications with conservative derating.	Choose only for cost-sensitive 600V systems where 175°C operation and 650V margin are not required.

Compared with STGW30H65DFB and IXGN30N60B3, IGP30N65F5XKSA1 provides superior efficiency at high frequency due to its lower V_CE(sat), faster switching, and higher thermal endurance-making it optimal for solar and UPS designs demanding >98% system efficiency and compact thermal management.

Availability

IGP30N65F5XKSA1 is available at Aetrix Electronics and suitable for solar converters, uninterruptible power supplies, and welding converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Infineon's qualified production lines.

Supply support for IGP30N65F5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to Infineon's TRENCHSTOP™ 5 high-speed IGBT product line, engineered specifically for high-efficiency, high-frequency power conversion in renewable energy and industrial backup systems.

FAQ

What gate resistor value is recommended for reliable switching?

A 23Ω gate resistor is specified in the datasheet for both turn-on and turn-off under standard test conditions (V_CC = 400V, I_C = 15A). This value balances switching speed and gate oscillation suppression; values below 15Ω increase EMI risk, while above 33Ω raises switching losses beyond 0.50 mJ at 150°C.

Is IGP30N65F5XKSA1 compatible with standard TO-220 heatsinks?

Yes-it uses the industry-standard PG-TO220-3 mechanical outline with 2.54 mm pin pitch and isolated collector tab. Mounting torque must not exceed 0.6 Nm on M3 screws to avoid package cracking, and thermal interface material with ≤0.2 K·cm²/W resistance is recommended for optimal R_th(j-a) performance.

Does this IGBT include an integrated anti-parallel diode?

No. IGP30N65F5XKSA1 is a discrete IGBT without an integrated freewheeling diode. External diode selection-particularly 650V SiC Schottky diodes-is explicitly recommended in the datasheet for boost and inverter applications to minimize reverse recovery losses and improve system efficiency.

How does junction temperature affect V_CE(sat) performance?

V_CE(sat) increases linearly with junction temperature: from 1.60V at 25°C to 1.90V at 175°C (typical). This 19% rise must be factored into conduction loss calculations at full-load thermal steady state, especially in sealed enclosures where T_vj may exceed 150°C without active cooling.

IGP30N65F5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 55 A

Current - Collector Pulsed (Icm):: 90 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 30A

Power - Max:: 188 W

Switching Energy:: 280µJ (on), 70µJ (off)

Input Type:: Standard

Gate Charge:: 65 nC

Td (on/off) @ 25°C:: 19ns/170ns

Test Condition:: 400V, 15A, 23Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IGP30N65F5XKSA1 FAQ

1.How can I place an order for IGP30N65F5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGP30N65F5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGP30N65F5XKSA1 reliable?

The price and inventory of IGP30N65F5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGP30N65F5XKSA1 is usually 5 days.

3.What payment methods are accepted for IGP30N65F5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGP30N65F5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGP30N65F5XKSA1?

IGP30N65F5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGP30N65F5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGP30N65F5XKSA1?

For technical support, including IGP30N65F5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGP30N65F5XKSA1 requirements.

6.How does Aetrix verify that IGP30N65F5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IGP30N65F5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGP30N65F5XKSA1 meets industry standards.

7.What is the process for return or replacement of IGP30N65F5XKSA1?

All IGP30N65F5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGP30N65F5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGP30N65F5XKSA1 part is unused and in its original packaging.

Return procedure for IGP30N65F5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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