Infineon Technologies IGP30N65H5XKSA1

Overview

IGP30N65H5XKSA1 from Infineon is a 650V, 30A high-speed trench-gate IGBT in TRENCHSTOP™ 5 technology, designed for hard-switching and resonant topologies in industrial power converters. It delivers 1.65V V_CE(sat) at 30A/25°C, 70nC gate charge, 175°C max junction temperature, and 0.80K/W junction-to-case thermal resistance. Used in solar inverters and UPS systems requiring fast switching with low conduction loss.

For engineers reviewing the IGP30N65H5XKSA1 datasheet, IGP30N65H5XKSA1 pinout, IGP30N65H5XKSA1 application, or IGP30N65H5XKSA1 equivalent, key selection criteria include V_CE(sat) stability over temperature, turn-off energy (0.10mJ at 15A), gate drive robustness (±30V transient rating), and TO-220-3 package thermal performance under continuous 30A operation.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate structure optimized for balanced switching speed and saturation voltage. Its low 7nH internal emitter inductance and 7pF reverse transfer capacitance (C_res) support clean turn-off waveforms in high-dv/dt environments. The device integrates a co-packaged ultrafast soft-recovery anti-parallel diode with matched thermal characteristics.

Designed for gate drive compatibility with standard ±15V logic-level controllers, it features a 4.0V typical gate threshold (V_GE(th)) and 39.5S transconductance (g_fs). Switching timing is characterized across 5–15A loads and 25–150°C junction temperatures to enable accurate loss modeling in PFC and inverter stages.

Key Specifications

Pinout & Package

IGP30N65H5XKSA1 uses the PG-TO220-3 package: insulated plastic case, single-row 3-pin vertical mounting, 0.8mm lead thickness, and 2.54mm pin pitch. Thermal pad on underside requires mechanical clamping and thermal compound for optimal R_th(j-c).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with STGW30H65DFB and IXGN30N60B3, IGP30N65H5XKSA1 offers superior thermal performance in TO-220-3, tighter V_CE(sat) tolerance, and integrated diode - making it optimal for space-constrained 400V industrial inverters where thermal management and layout simplicity are critical.

Availability

IGP30N65H5XKSA1 is available at Aetrix Electronics and suitable for solar converters, uninterruptible power supplies, and welding converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IGP30N65H5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the TRENCHSTOP™ 5 high-speed IGBT product line, engineered specifically for high-efficiency, medium-frequency (10–100kHz) industrial power conversion where low conduction and switching losses must coexist.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 23Ω gate resistor is specified in the datasheet for both turn-on and turn-off under standard test conditions (V_GE = 0/15V). Using >33Ω increases t_d(off) beyond 200ns and risks cross-conduction in bridge circuits; values <10Ω require gate driver capable of ≥4A peak current to avoid oscillation.

Does IGP30N65H5XKSA1 include an integrated freewheeling diode?

Yes - it integrates a monolithically co-packaged ultrafast soft-recovery anti-parallel diode with 35ns reverse recovery time (t_rr) and matching thermal coefficient to the IGBT die. This eliminates external diode placement and ensures synchronized thermal behavior during regeneration.

Can this IGBT operate reliably at 150°C case temperature?

No - the absolute maximum case temperature is not rated; instead, the datasheet specifies I_C derating curves. At T_C = 100°C, continuous current drops to 35A; at T_C = 125°C, it falls to ~22A. Sustained operation above 100°C case requires active cooling and strict thermal monitoring to stay within 175°C junction limit.

Is lead-free soldering compatible with the PG-TO220-3 package?

Yes - the device is RoHS-compliant with Pb-free lead plating and qualified for wave soldering at 260°C for 10 seconds at 1.6mm from case. Reflow profiles must follow JEDEC J-STD-020, with peak temperature ≤260°C and time above 217°C limited to 60 seconds to avoid internal delamination.