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Infineon Technologies IGP40N65F5XKSA1

Part No.:
IGP40N65F5XKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-220-3
Datasheet:
AetrixIGP40N65F5XKSA1.pdf
Description:
IGBT 650V 74A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:300

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Product details

Overview

IGP40N65F5XKSA1 from Infineon is a 650 V, 40 A high-speed trench-gate field-stop IGBT in TRENCHSTOP™ 5 technology, optimized for hard-switching and resonant topologies in industrial power converters. It delivers 1.6 V VCE(sat) at 40 A and 25°C, supports 175°C maximum junction temperature, and features low gate charge (95 nC) for fast switching with reduced losses in solar inverters and UPS systems.

For engineers reviewing the IGP40N65F5XKSA1 datasheet, IGP40N65F5XKSA1 pinout, IGP40N65F5XKSA1 application, or IGP40N65F5XKSA1 equivalent, key selection criteria include VCE(sat) stability across temperature, turn-off energy (0.10 mJ at 5 A), thermal resistance (0.60 K/W j-c), and TO-220-3 package compatibility with standard heatsink mounting.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop architecture to achieve low conduction loss and fast switching simultaneously. Its 9 nC reverse transfer capacitance (Cres) and 2500 pF input capacitance (Cies) enable precise gate drive control under high dv/dt conditions up to 650 V.

The device integrates a monolithic emitter structure that minimizes tail current, reducing turn-off energy to 0.10 mJ at 5 A and 25°C. Its 7.0 nH internal emitter inductance (measured 5 mm from case) supports stable operation in high-frequency boost and inverter stages without external snubbing.

Key Specifications

ParameterValue and Actual Design Meaning
VCE650 V - Withstands DC bus voltages up to 650 V in solar and UPS applications without derating.
IC40 A continuous - Rated collector current at TC = 25°C, supporting 20 A typical inverter phase-leg designs.
VCE(sat)1.6 V @ 40 A, 25°C - Low saturation voltage reduces conduction loss and heatsink requirements.
QG95 nC - Enables efficient gate driving with standard 15 Ω resistors and low-power drivers.
td(off)160 ns typ. @ 25°C - Fast turn-off delay supports switching frequencies up to 100 kHz in hard-switched PFC stages.
Rth(j–c)0.60 K/W - Allows direct thermal interface to heatsinks, enabling compact thermal design in enclosed enclosures.
Tvj(max)175°C - Supports reliable operation in high-ambient environments such as industrial welding equipment.

Pinout & Package

IGP40N65F5XKSA1 is housed in a PG-TO220-3 package with isolated collector tab. The plastic body provides creepage/clearance compliant with industrial safety standards, and the backside collector enables direct thermal coupling to heatsinks.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1GateControl terminal requiring ±20 V absolute max gate-emitter voltage; low 95 nC QG enables fast, low-loss switching.
Pin 2 & BacksideCollectorMain high-side power terminal; electrically and thermally connected to metal tab for low-inductance, high-current return path.
Pin 3EmitterReference node for gate drive and current sensing; internal 7.0 nH inductance limits parasitic oscillation during di/dt transients.

Key Features

FeatureDesign Value
Low VCE(sat) with temperature stability1.6 V @ 25°C, rising only to 1.9 V @ 175°C - Maintains efficiency across full operating range without active thermal compensation.
Optimized for SiC diode pairingFast fall time (16 ns) and minimal tail current - Reduces reverse recovery stress when used with 650 V SiC Schottky diodes in boost converters.
JEDEC-qualified reliabilityQualified per JESD47 and AEC-Q101 stress test conditions - Validated for long-term use in industrial power supplies and grid-tied inverters.
Pb-free and RoHS-compliant platingLead-free matte tin gate and emitter terminations - Meets global environmental compliance without compromising solder joint integrity or wire bond reliability.

Applications

Solar String InvertersUninterruptible Power Supplies (UPS)

Use Scenario: DC-to-AC inversion stage in single-phase string inverters handling up to 5 kW per module.

IC Role / Device Role / Timing Role: High-side IGBT switch in 3-level NPC topology operating at 16–20 kHz with synchronous SiC diode commutation.

Use Value: 0.10 mJ Eoff at 5 A reduces thermal load on heatsinks, enabling passive cooling in outdoor-rated enclosures.

Use Scenario: Online double-conversion UPS output inverter delivering clean 230 VAC/50 Hz with <1% THD.

IC Role / Device Role / Timing Role: Bridge-leg switch in three-phase inverter stage, driven by isolated gate driver with 15 Ω turn-on/off resistance.

Use Value: 175°C Tvj(max) and 0.60 K/W Rth(j–c) support continuous 100% load operation in confined rack-mounted chassis.

Industrial Welding ConvertersMid-Frequency Induction Heaters

Use Scenario: Primary-side IGBT in inverter-based arc welding power supplies operating with 50–100 kHz burst-mode modulation.

IC Role / Device Role / Timing Role: Hard-switched main switch controlling primary current into high-leakage transformer, with 160 ns td(off) enabling precise arc regulation.

Use Value: 650 V VCE rating accommodates 400 V DC bus with 50% overvoltage margin during load dump events.

Use Scenario: Half-bridge inverter driving 20–50 kHz resonant tank for metal heating in forging and brazing systems.

IC Role / Device Role / Timing Role: Fast-switching device in zero-voltage switching (ZVS) configuration, leveraging low Cres (9 pF) for soft turn-on.

Use Value: 1.6 V VCE(sat) minimizes conduction loss at 40 A RMS, improving system efficiency from 89% to 91.5%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IGW40N65F5Same die, PG-TO247-3 package with higher Rth(j–c) (0.60 K/W same), but 13.0 nH LE vs. 7.0 nHBetter suited for higher-power modules where larger footprint allows improved thermal mass and lower peak junction tempSelect when board space permits TO-247 and system requires >100 W dissipation capability
IKP40N65ES5650 V, 40 A, but uses TRENCHSTOP™ 5 Enhanced Speed variant with 0.07 mJ Eon at 5 A - 30% lower turn-on lossTargeted at ultra-high-frequency (>150 kHz) resonant converters where Eon dominates total lossPrefer when optimizing for >80 kHz operation and gate drive power budget is constrained

Compared with IGW40N65F5 and IKP40N65ES5, IGP40N65F5XKSA1 offers the lowest cost-per-watt in TO-220 form factor while maintaining best-in-class VCE(sat) and thermal resistance for mid-power industrial inverters up to 5 kW.

Availability

IGP40N65F5XKSA1 is available at Aetrix Electronics and suitable for solar converters, uninterruptible power supplies, and welding converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IGP40N65F5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IGP40N65F5XKSA1 belongs to the TRENCHSTOP™ 5 high-speed IGBT product line, engineered specifically for efficiency-critical hard-switching and resonant converter topologies in 600–650 V industrial power systems.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies 15 Ω for both turn-on and turn-off with 400 V VCC and 20 A IC. Using >22 Ω increases td(off) beyond 200 ns and raises Eoff by >25%, risking thermal runaway in continuous 100 kHz operation. For 5 A applications, 27 Ω is acceptable but requires verification of gate drive voltage overshoot.

Does IGP40N65F5XKSA1 include an integrated anti-parallel diode?

No. IGP40N65F5XKSA1 is a discrete IGBT without an integrated freewheeling diode. External diode selection-such as Infineon's IDH08SG60C or C3D04060A SiC Schottky-is required for inductive load commutation. The low tail current characteristic minimizes reverse recovery stress on the external diode.

Can this IGBT be used in parallel configurations?

Yes, but only with matched devices and individual gate resistors. The positive VGE(th) temperature coefficient (4.0 V typ. at 25°C, rising to 4.8 V at 175°C) ensures current sharing stability. Layout must minimize loop inductance asymmetry; differential emitter inductance >1 nH between paralleled units causes >15% current imbalance at 20 kHz.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At TC = 100°C, the DC SOA is limited to 46 A at VCE ≤ 100 V per Figure 3. For pulse operation (tp = 100 µs), the device supports 74 A up to 650 V per the forward-bias SOA curve. Exceeding these boundaries risks second breakdown due to localized thermal runaway in the trench structure.

IGP40N65F5XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop®
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
74 A
Current - Collector Pulsed (Icm):
120 A
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 40A
Power - Max:
255 W
Switching Energy:
360µJ (on), 100µJ (off)
Input Type:
Standard
Gate Charge:
95 nC
Td (on/off) @ 25°C:
19ns/160ns
Test Condition:
400V, 20A, 15Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3

IGP40N65F5XKSA1 FAQ

1.How can I place an order for IGP40N65F5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGP40N65F5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGP40N65F5XKSA1 reliable?

The price and inventory of IGP40N65F5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGP40N65F5XKSA1 is usually 5 days.

3.What payment methods are accepted for IGP40N65F5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGP40N65F5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGP40N65F5XKSA1?

IGP40N65F5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGP40N65F5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGP40N65F5XKSA1?

For technical support, including IGP40N65F5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGP40N65F5XKSA1 requirements.

6.How does Aetrix verify that IGP40N65F5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IGP40N65F5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGP40N65F5XKSA1 meets industry standards.

7.What is the process for return or replacement of IGP40N65F5XKSA1?

All IGP40N65F5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGP40N65F5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGP40N65F5XKSA1 part is unused and in its original packaging.

Return procedure for IGP40N65F5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IGP40N65F5XKSA1 Tags

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