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Infineon Technologies IGP40N65H5XKSA1

Part No.:
IGP40N65H5XKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-220-3
Datasheet:
AetrixIGP40N65H5XKSA1.pdf
Description:
IGBT 650V 74A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:978

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Product details

Overview

IGP40N65H5XKSA1 from Infineon is a 650V, 40A high-speed TRENCHSTOP™ 5 IGBT in PG-TO220-3 package, optimized for hard-switching and resonant topologies in industrial power converters. It delivers 1.65V VCE(sat) at 40A/25°C, 95nC gate charge, and 175°C maximum junction temperature, enabling efficient operation in solar inverters and UPS systems.

For engineers reviewing the IGP40N65H5XKSA1 datasheet, IGP40N65H5XKSA1 pinout, IGP40N65H5XKSA1 application, or IGP40N65H5XKSA1 equivalent, key selection criteria include its low conduction loss, fast switching (19–22ns turn-on delay, 13–24ns fall time), JEDEC-qualified reliability, and compatibility with existing H4/H3 board layouts as a plug-and-play upgrade.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop structure to simultaneously reduce conduction and switching losses. Its 95nC total gate charge and 9pF reverse transfer capacitance (Cres) support high-frequency operation up to 100kHz in hard-switched PFC and inverter stages.

The device integrates a monolithic anti-parallel diode with soft recovery characteristics, and its thermal resistance Rth(j-c) of 0.60K/W enables direct mounting on heatsinks without thermal interface material degradation under sustained 40A DC load conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VCE650V - supports 400V DC bus designs with 30% voltage margin for transient overvoltage handling
IC40A continuous - rated for 74A pulsed current, enabling robust short-circuit withstand in UPS and welding inverters
VCE(sat)1.65V @ 40A/25°C - reduces conduction loss to ≤66W at full load, lowering heatsink requirements
QG95nC - allows gate drive with standard ±15V 2A drivers while maintaining <25ns switching transitions
td(off)165–240ns - enables precise dead-time control in three-phase inverters without shoot-through risk
Tvj(max)175°C - supports operation in sealed enclosures with ambient up to 85°C and derated case temperature
Rth(j-c)0.60K/W - permits direct thermal coupling to aluminum heatsinks, eliminating TIM aging concerns

Pinout & Package

IGP40N65H5XKSA1 uses the PG-TO220-3 package with isolated collector tab (backside). The plastic body provides creepage/clearance compliant with IEC 61800-5-1 for 650V systems.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1GateLow-impedance control input requiring ≤95nC charge; must be driven with <15Ω series resistance to limit ringing
Pin 2 + BacksideCollectorMain high-side power terminal; backside metal tab is electrically connected to Pin 2 and serves as primary heat path
Pin 3EmiterPower return and gate reference node; layout must minimize stray inductance (<10nH) to suppress voltage spikes during turn-off

Key Features

FeatureDesign Value
Best-in-class efficiency in hard switching0.14mJ Eoff @ 5A/400V enables >98.5% efficiency in 20kHz PFC stages
Plug-and-play replacement of prior generationsIdentical pinout and footprint to IGP40N65H3/H4, allowing drop-in PCB reuse without layout change
JEDEC-qualified reliabilityQualified per JESD47 and AEC-Q101 stress tests, supporting 15-year field life in industrial UPS
Low gate charge with high dV/dt immunity95nC QG combined with 50V/ns rated dV/dt ensures noise-immune operation in noisy motor drive environments

Applications

Solar String InvertersUninterruptible Power Supplies

Use Scenario: DC-to-AC conversion in 3–10kW residential solar inverters operating at 16–25kHz switching frequency.

IC Role / Device Role / Timing Role: Main inverter switch in three-phase bridge configuration, handling bidirectional energy flow and grid synchronization.

Use Value: 1.65V VCE(sat) and 0.14mJ Eoff at 5A reduce thermal load by 22% vs. H4 generation, enabling smaller heatsinks and passive cooling.

Use Scenario: Online double-conversion UPS delivering clean 50/60Hz output with zero transfer time during mains failure.

IC Role / Device Role / Timing Role: Inverter-stage switch managing battery-to-AC conversion and active power factor correction.

Use Value: 175°C Tvj(max) and 0.60K/W Rth(j-c) sustain 100% load at 40°C ambient without derating, improving system MTBF.

Industrial Welding ConvertersMid-Frequency Induction Heaters

Use Scenario: IGBT-based inverter driving 1–5kHz arc-current waveforms with rapid current slew rates (>500A/ms).

IC Role / Device Role / Timing Role: Primary switching element in full-bridge topology controlling weld current amplitude and timing precision.

Use Value: 120A pulsed current rating and 24ns fall time enable sub-millisecond current ramp control, improving weld penetration consistency.

Use Scenario: Resonant tank driver in 20–100kHz induction heating systems for metal hardening and brazing.

IC Role / Device Role / Timing Role: Half-bridge switch operating in zero-voltage switching (ZVS) mode with controlled tail current decay.

Use Value: Soft-recovery anti-parallel diode and 13nH internal emitter inductance minimize voltage overshoot during ZVS transitions, reducing snubber losses by 35%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IGW40N65H5Same die, PG-TO247-3 package with higher Rth(j-c) (0.45K/W) and 13nH emitter inductance vs. 7nH in IGP40N65H5Better suited for forced-air-cooled systems requiring higher power density than TO220 allowsSelect when thermal budget permits larger heatsink footprint and layout supports TO247 mechanical clearance
STGW40H65DFB650V/40A trench-gate IGBT with 1.8V VCE(sat), 110nC QG, and no integrated diode - requires external ultrafast diodeTargeted at cost-sensitive industrial drives where discrete diode selection optimizes recovery behaviorChoose only if external diode integration and higher gate drive power are acceptable trade-offs for BOM cost reduction

Compared with IGW40N65H5 and STGW40H65DFB, IGP40N65H5XKSA1 offers the lowest thermal resistance in TO220 form factor and monolithic diode integration-critical for space-constrained solar and UPS designs where layout area and assembly steps are constrained.

Availability

IGP40N65H5XKSA1 is available at Aetrix Electronics and suitable for solar converters, uninterruptible power supplies, and welding converters requiring stable component supply, long-term industrial lifecycle support, and RoHS-compliant manufacturing.

Supply support for IGP40N65H5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to Infineon's TRENCHSTOP™ 5 high-speed IGBT product line, engineered specifically for high-efficiency, high-frequency industrial power conversion where reduced switching and conduction losses directly improve system-level thermal and size performance.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG(on)/RG(off) = 15Ω for characterization. For 40A operation at 25°C, a 10–15Ω gate resistor ensures <25ns rise/fall times while limiting peak gate current to <1.5A. At 175°C junction temperature, reduce to ≤10Ω to maintain safe dv/dt control and prevent parasitic turn-on.

Does IGP40N65H5XKSA1 include an integrated freewheeling diode?

Yes, it integrates a monolithic anti-parallel diode with soft recovery characteristics and 1.8V forward voltage at 40A. This diode shares the same thermal path as the IGBT die and is qualified for synchronous rectification in inverter legs without external diode placement.

Can this IGBT operate safely at 100kHz switching frequency?

Yes - its 95nC QG, 9pF Cres, and 0.14mJ Eoff at 5A enable efficient 100kHz operation in resonant LLC topologies. However, conduction loss dominates above 50kHz at full 40A load; thermal design must ensure Tvj stays ≤150°C under those conditions.

Is the PG-TO220-3 package lead-free and RoHS compliant?

Yes - IGP40N65H5XKSA1 features Pb-free lead plating and complies fully with RoHS Directive 2011/65/EU. The package meets JEDEC J-STD-020 moisture sensitivity level MSL-1, allowing unlimited floor life at ≤30°C/85% RH without dry pack requirements.

IGP40N65H5XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop®
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
74 A
Current - Collector Pulsed (Icm):
120 A
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 40A
Power - Max:
255 W
Switching Energy:
390µJ (on), 120µJ (off)
Input Type:
Standard
Gate Charge:
95 nC
Td (on/off) @ 25°C:
22ns/165ns
Test Condition:
400V, 20A, 15Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-1

IGP40N65H5XKSA1 FAQ

1.How can I place an order for IGP40N65H5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGP40N65H5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGP40N65H5XKSA1 reliable?

The price and inventory of IGP40N65H5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGP40N65H5XKSA1 is usually 5 days.

3.What payment methods are accepted for IGP40N65H5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGP40N65H5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGP40N65H5XKSA1?

IGP40N65H5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGP40N65H5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGP40N65H5XKSA1?

For technical support, including IGP40N65H5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGP40N65H5XKSA1 requirements.

6.How does Aetrix verify that IGP40N65H5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IGP40N65H5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGP40N65H5XKSA1 meets industry standards.

7.What is the process for return or replacement of IGP40N65H5XKSA1?

All IGP40N65H5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGP40N65H5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGP40N65H5XKSA1 part is unused and in its original packaging.

Return procedure for IGP40N65H5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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