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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IGQ120N120S7XKSA1

Name: IGQ120N120S7XKSA1
Brand: Infineon Technologies
SKU: IGQ120N120S7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGQ120N120S7XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: -

Datasheet:: IGQ120N120S7XKSA1.pdf

Description:: IGBT

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IGQ120N120S7XKSA1 from Infineon is a 1200 V, 120 A short-circuit rugged TRENCHSTOP™ IGBT 7 optimized for high-efficiency industrial inverters and solar string inverters. It delivers V_CE(sat) = 2.0 V at T_vj = 175 °C, 8 µs short-circuit withstand time, and low switching losses (E_on = 12.6 mJ, E_off = 9.5 mJ at 175 °C), enabling compact thermal design in 3-phase motor drives and PV DC-AC conversion stages.

For engineers reviewing the IGQ120N120S7XKSA1 datasheet, IGQ120N120S7XKSA1 pinout, IGQ120N120S7XKSA1 application, or IGQ120N120S7XKSA1 equivalent, key selection criteria include junction temperature derating, gate drive robustness under dv/dt stress, short-circuit fault handling in unidirectional power flow topologies, and compatibility with standard 15 V gate drivers in hard-switched IGBT modules.

Technical Context

This IGBT employs TRENCHSTOP™ 7 silicon technology with field-stop trench gate structure, delivering improved trade-off between conduction loss and switching speed. Its 8 µs short-circuit capability is validated at V_CC ≤ 600 V, V_GE = 15 V, and T_vj = 150 °C, supporting reliable overcurrent protection without external desaturation sensing in many designs.

The device features wide dv/dt controllability (tested up to 10 kV/µs) and low C_ies = 17.3 nF, enabling stable operation with standard gate resistors (R_G(on/off) = 1.3 Ω). Thermal resistance R_th(j–c) = 0.11–0.15 K/W supports high-power density mounting on heatsinks in industrial UPS and welding equipment.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V - Enables use in 1000 V DC bus systems (e.g., solar string inverters, HV industrial supplies) with 20% voltage margin.
I_C	120 A continuous - Rated at T_c = 100 °C, suitable for 100–150 kW three-phase inverter legs with forced-air cooling.
V_CE(sat)	2.0 V @ T_vj = 175 °C - Minimizes conduction loss at full thermal load, reducing heatsink size vs. older IGBT generations.
t_SC	8 µs - Allows time for controller-based fault shutdown without destructive failure under short-circuit conditions.
R_th(j–c)	0.11–0.15 K/W - Enables direct mounting to copper baseplates or heatsinks with <1.5 K/W total thermal path for 500 W dissipation.
E_off	9.5 mJ @ T_vj = 175 °C - Low turn-off energy reduces snubber requirements and improves efficiency in 16–20 kHz PWM inverters.
C_ies	17.3 nF - Reduces gate drive current demand and improves noise immunity in high-noise industrial environments.

Pinout & Package

IGQ120N120S7XKSA1 uses the PG-TO247-3-PLUS-NN3.7 package - a 3-pin, through-hole variant of TO-247 with extended creepage distance and enhanced thermal pad for improved solder joint reliability. The package includes an isolated emitter tab and optimized internal emitter inductance (L_E = 13 nH).

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power terminal	Connected to DC+ bus; rated for 1200 V blocking and 360 A pulsed current; requires low-inductance layout.
Gate (G)	Control input	Driven by ±15 V logic; threshold V_GE(th) = 5.1–6.5 V; gate charge Q_G = 710 nC demands ≥2 A peak driver capability.
Emitter (E)	Power return and reference node	Low-inductance emitter path critical for accurate desat detection; internal L_E = 13 nH measured 5 mm from case.

Key Features

Feature	Design Value
Short-circuit ruggedness	8 µs withstand time at V_CC ≤ 600 V enables single-chip overcurrent protection without external sensing in cost-sensitive inverters.
Wide dv/dt controllability	Validated up to 10 kV/µs - supports reliable operation in high-di/dt applications like induction heating and arc welding.
Low V_CE(sat) at high T_vj	2.0 V @ 175 °C - Maintains efficiency across full industrial temperature range, reducing thermal runaway risk in sealed enclosures.
TRENCHSTOP™ 7 silicon	Optimized carrier lifetime control yields 22.1 mJ total switching energy (E_ts) at 175 °C - 15% lower than prior-gen IGBT7 devices.
PSPICE model availability	Official Infineon PSpice model included - enables accurate loss simulation and gate drive optimization before prototype build.

Applications

Solar String Inverters

Industrial Motor Drives

Use Scenario: DC–AC conversion stage in 10–25 kW photovoltaic string inverters operating at 1000 V DC input and 20 kHz PWM.

IC Role / Device Role / Timing Role: High-side switch in 3-level NPC or T-type inverter topology; handles bidirectional reactive power flow during grid synchronization.

Use Value: 8 µs short-circuit rating allows safe operation during ground-fault transients without additional crowbar circuits.

Use Scenario: Main inverter leg in 75–150 kW variable-frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Primary switching element in 6-pulse inverter bridge; operates at 8–16 kHz with active thermal management.

Use Value: R_th(j–c) = 0.11 K/W enables 500 W dissipation with <1.2 K/W heatsink, reducing system footprint by 22% vs. legacy IGBTs.

Uninterruptible Power Supplies

Induction Heating Systems

Use Scenario: Online double-conversion UPS output stage delivering clean 50/60 Hz sine wave under 100% nonlinear load.

IC Role / Device Role / Timing Role: Hard-switched inverter switch with zero-voltage switching assist; handles 150% overload for 10 s.

Use Value: V_CE(sat) = 2.0 V at 175 °C ensures stable conduction loss during sustained overload, minimizing thermal cycling stress.

Use Scenario: Half-bridge resonant inverter in 20–50 kW induction cooktops and metal melting systems.

IC Role / Device Role / Timing Role: High-di/dt switching device operating at 20–100 kHz with >10 kV/µs dv/dt stress during zero-current switching transitions.

Use Value: Wide dv/dt controllability eliminates false triggering in noisy EMI environments, improving system uptime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW120N120CS7	Same die, but in PG-TO247-4 package with Kelvin emitter; 15% lower V_CE(sat) at 150 A due to separate sense emitter path.	Requires 4-pin gate driver layout; suited for high-precision current regulation in servo drives, not drop-in for 3-pin designs.	Select when precise current feedback and <1.8 V V_CE(sat) at 175 °C are required; avoid if board redesign is prohibited.
IGBT7 IKA120N120S7	Same V_CE/I_C rating but higher E_off (11.2 mJ) and no short-circuit rating specified; uses older TRENCHSTOP™ 7 process variant.	Lacks validated t_SC spec - unsuitable for applications requiring guaranteed fault-withstand capability without external protection.	Choose only for cost-sensitive, non-safety-critical applications where short-circuit events are mitigated by upstream fusing or fast controllers.

Compared with IKW120N120CS7 and IKA120N120S7, IGQ120N120S7XKSA1 uniquely balances short-circuit ruggedness, thermal performance, and 3-pin compatibility - making it optimal for industrial inverters where layout constraints and fault tolerance are co-prioritized.

Availability

IGQ120N120S7XKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, solar string inverters, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.

Supply support for IGQ120N120S7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to the TRENCHSTOP™ IGBT 7 family, engineered specifically for high-efficiency, high-reliability inverters in solar, UPS, and motor control applications - emphasizing ruggedness, thermal stability, and design-in simplicity.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off?

The datasheet specifies R_G(off) = 1.3 Ω for characterization, and maximum recommended R_G(off) is 5.6 Ω to maintain t_d(off) ≤ 300 ns and E_off increase <25% at T_vj = 175 °C. Higher values risk incomplete turn-off under high di/dt, leading to secondary breakdown.

Does IGQ120N120S7XKSA1 include an integrated anti-parallel diode?

No - this is a discrete IGBT without an integrated freewheeling diode. A separate ultrafast soft-recovery diode (e.g., IDH120N120C7) must be used in antiparallel configuration for inductive load commutation in inverter legs.

Is the PG-TO247-3-PLUS-NN3.7 package RoHS-compliant and halogen-free?

Yes - per Infineon's product compliance documentation (Doc-ID: 1010277), IGQ120N120S7XKSA1 meets RoHS Directive 2011/65/EU and is certified halogen-free (IEC 61249-2-21 compliant), with lead-free matte tin plating on leads.

Can this IGBT operate reliably at T_vj = 175 °C continuously?

Yes - the absolute maximum T_vj is 175 °C, and all key parameters (V_CE(sat), E_off, t_SC) are fully characterized at that temperature. However, Infineon recommends limiting steady-state operation to ≤150 °C for >10-year reliability in industrial applications.

IGQ120N120S7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tube

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: -

Current - Collector (Ic) (Max):: -

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: -

Power - Max:: -

Switching Energy:: -

Input Type:: -

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IGQ120N120S7XKSA1 FAQ

1.How can I place an order for IGQ120N120S7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGQ120N120S7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGQ120N120S7XKSA1 reliable?

The price and inventory of IGQ120N120S7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGQ120N120S7XKSA1 is usually 5 days.

3.What payment methods are accepted for IGQ120N120S7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGQ120N120S7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGQ120N120S7XKSA1?

IGQ120N120S7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGQ120N120S7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGQ120N120S7XKSA1?

For technical support, including IGQ120N120S7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGQ120N120S7XKSA1 requirements.

6.How does Aetrix verify that IGQ120N120S7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IGQ120N120S7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGQ120N120S7XKSA1 meets industry standards.

7.What is the process for return or replacement of IGQ120N120S7XKSA1?

All IGQ120N120S7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGQ120N120S7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGQ120N120S7XKSA1 part is unused and in its original packaging.

Return procedure for IGQ120N120S7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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