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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IGQ75N120S7XKSA1

Name: IGQ75N120S7XKSA1
Brand: Infineon Technologies
SKU: IGQ75N120S7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGQ75N120S7XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IGQ75N120S7XKSA1.pdf

Description:: IGBT TRENCH 1200V 154A TO247-3

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Product details

Overview

IGQ75N120S7XKSA1 from Infineon is a 1200 V, 75 A short-circuit rugged TRENCHSTOP™ IGBT 7 optimized for industrial power conversion. It delivers V_CE(sat) = 2.0 V at T_vj = 175 °C, 8 µs short-circuit withstand time, and wide dv/dt controllability-enabling robust operation in solar inverters and high-reliability industrial power supplies.

For engineers reviewing the IGQ75N120S7XKSA1 datasheet, IGQ75N120S7XKSA1 pinout, IGQ75N120S7XKSA1 application, or IGQ75N120S7XKSA1 equivalent, key selection criteria include junction-temperature-dependent switching energy (E_on/E_off), gate charge (450 nC), thermal resistance R_th(j–c) = 0.17–0.24 K/W, and short-circuit robustness under 600 V bus conditions.

Technical Context

This IGBT employs TRENCHSTOP™ 7 silicon technology with field-stop and trench-gate structures to achieve low conduction loss and controlled turn-off tail current. Its 8 µs short-circuit rating is validated at V_CC ≤ 600 V, V_GE = 15 V, and T_vj = 150 °C, supporting fault-tolerant designs without external desaturation protection in many cases.

Dynamic performance is characterized using standardized test conditions: V_CC = 600 V, R_G(on/off) = 2.1 Ω, L_σ = 30 nH, and C_σ = 18 pF. Switching times (e.g., t_d(off) = 253 ns at T_vj = 175 °C) and energy losses (E_off = 6.48 mJ at T_vj = 175 °C) are specified across full temperature and current operating ranges.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V - supports 1000 V DC-link systems with 20% margin for voltage transients in solar and UPS applications
I_C	75 A continuous - rated at T_c = 100 °C, enabling compact heatsink design in 15–25 kW industrial inverters
V_CE(sat)	2.0 V at T_vj = 175 °C - reduces conduction loss and thermal stress during overload conditions
t_SC	8 µs - enables reliable overcurrent response time for hardware-based protection circuits
R_th(j–c)	0.17–0.24 K/W - allows direct mounting to heatsinks with predictable thermal interface resistance
Q_G	450 nC - determines gate driver peak current requirement (~215 mA for 2.1 Ω gate resistor)
E_off	6.48 mJ at T_vj = 175 °C - defines snubber sizing and thermal load during hard-switched operation

Pinout & Package

Package: PG-TO247-3-PLUS-NN3.7 - enhanced thermal and mechanical reliability over standard TO-247, with improved creepage/clearance and reduced internal emitter inductance (L_E = 13 nH).

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power terminal	Connected to DC-link positive; carries full load current and must be routed with low-inductance layout
Gate (G)	Control input	Requires low-impedance drive path; sensitive to noise due to 5.7 V typical V_GE(th) and 450 nC Q_G
Emitter (E)	Power return and reference node	Serves as source of gate drive return and current sense reference; low-inductance connection critical for stability

Key Features

Feature	Design Value
Short-circuit ruggedness	8 µs withstand time at V_CC ≤ 600 V and T_vj = 150 °C - eliminates need for fast desat detection in many industrial motor drives
High-temperature V_CE(sat)	2.0 V at T_vj = 175 °C - maintains efficiency and thermal headroom during sustained overload or ambient temperature rise
Wide dv/dt controllability	Validated up to 10 kV/µs - enables stable operation with fast-switching SiC diodes and minimizes EMI filter burden
Low internal emitter inductance	L_E = 13 nH measured 5 mm from case - suppresses voltage overshoot during turn-off and improves paralleling capability

Applications

Solar String Inverter

Industrial UPS Inverter Stage

Use Scenario: DC–AC inversion in 15–25 kW string inverters with 1000 V DC-link and forced-air cooling.

IC Role / Device Role / Timing Role: High-side switch in three-phase two-level inverter bridge, operating at 16 kHz with sinusoidal PWM.

Use Value: 8 µs short-circuit rating allows safe shutdown during ground-fault events; 2.0 V V_CE(sat) at 175 °C reduces thermal derating by ~12% vs. prior-gen IGBTs.

Use Scenario: Bidirectional inverter in 20 kVA industrial uninterruptible power supply with battery backup and harmonic filtering.

IC Role / Device Role / Timing Role: Main power switch in output stage, handling both normal AC generation and regenerative braking energy.

Use Value: Low R_th(j–c) (0.17 K/W) enables direct heatsink mounting without thermal interface pads; 450 nC Q_G supports efficient isolated gate driver design.

Induction Heating Power Stage

Medium-Voltage Motor Drive

Use Scenario: Resonant half-bridge in 12–18 kW induction heating systems operating at 20–50 kHz with ZVS-assisted switching.

IC Role / Device Role / Timing Role: High-frequency switching device in series-resonant topology, requiring low tail current and controlled dv/dt.

Use Value: Wide dv/dt controllability prevents spurious turn-on; 13 nH internal emitter inductance minimizes voltage spikes during zero-current switching transitions.

Use Scenario: Three-level NPC inverter for 400–690 V AC motor drives rated up to 30 kW in factory automation systems.

IC Role / Device Role / Timing Role: Upper-leg switch in phase-leg module, subjected to repetitive short-circuit stress during stall conditions.

Use Value: JEDEC-qualified industrial reliability and 8 µs t_SC enable compliance with IEC 61800-5-1 safety requirements without additional crowbar circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW75N120H3	Same 1200 V/75 A rating but H3 generation; higher V_CE(sat) = 2.2 V at 175 °C; no short-circuit rating specified	Lacks documented t_SC; suited for non-fault-critical rectifier or soft-switched applications	Select when cost sensitivity outweighs short-circuit robustness and thermal margin is ample
IGBT7 NPT S7 1200V 75A (IKW40N120H3)	Lower current rating (40 A); lower Q_G (220 nC); same V_CE(sat) profile but reduced thermal capacity	Requires parallel devices for 75 A loads; higher system complexity and layout sensitivity	Choose only for space-constrained designs where peak current < 50 A and paralleling is impractical

Compared with IKW75N120H3 and IKW40N120H3, IGQ75N120S7XKSA1 provides verified short-circuit ruggedness and superior thermal performance at full rated current-making it the preferred choice for industrial inverters requiring functional safety compliance and extended lifetime under thermal stress.

Availability

IGQ75N120S7XKSA1 is available at Aetrix Electronics and suitable for solar inverters, industrial UPS systems, induction heating equipment, and medium-voltage motor drives requiring stable component supply and long-term lifecycle support.

Supply support for IGQ75N120S7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the TRENCHSTOP™ IGBT 7 product line, engineered specifically for high-efficiency, high-reliability industrial power conversion-emphasizing short-circuit robustness, high-temperature operation, and compatibility with modern gate drivers and thermal management strategies.

FAQ

What is the maximum allowable gate-emitter voltage for IGQ75N120S7XKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC, with transient tolerance up to ±25 V for pulses ≤ 0.5 µs and duty cycle < 0.1%. Exceeding ±20 V continuously risks permanent gate oxide damage. Gate drive circuits must include clamping (e.g., Zener diodes) to ensure V_GE remains within this limit during switching transients and noise events.

Can IGQ75N120S7XKSA1 be used in parallel configurations?

Yes-its positive temperature coefficient of V_CE(sat) and low internal emitter inductance (13 nH) support stable current sharing. Successful paralleling requires matched gate resistors, symmetrical PCB layout, and individual gate drive paths. Thermal coupling between devices must also be minimized to avoid thermal runaway at high ambient temperatures.

What is the recommended gate resistor value for standard 16 kHz inverter operation?

A gate resistor of 2.1 Ω is used in the datasheet's switching characterization and provides balanced trade-offs between E_on/E_off, dv/dt control, and gate driver dissipation. For 16 kHz operation with forced-air cooling, R_G = 2.2 Ω (±5%) is recommended to maintain t_d(off) ≈ 250 ns and limit E_off to ≤ 6.5 mJ at T_vj = 175 °C.

Does IGQ75N120S7XKSA1 include an integrated anti-parallel diode?

No-it is a discrete IGBT die in a 3-pin TO-247 package without an integrated freewheeling diode. A separate ultrafast or SiC Schottky diode (e.g., IDH08SG60C or similar) must be used in anti-parallel configuration for inductive load commutation. The companion diode IKQ75N120CS7 is recommended by Infineon for matched thermal and dynamic performance.

IGQ75N120S7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TRENCHSTOP™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 154 A

Current - Collector Pulsed (Icm):: 225 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 75A

Power - Max:: 630 W

Switching Energy:: 5.13mJ (on), 3.48mJ (off)

Input Type:: Standard

Gate Charge:: 450 nC

Td (on/off) @ 25°C:: 38ns/190ns

Test Condition:: 600V, 75A, 2.1Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-55

IGQ75N120S7XKSA1 FAQ

1.How can I place an order for IGQ75N120S7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGQ75N120S7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGQ75N120S7XKSA1 reliable?

The price and inventory of IGQ75N120S7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGQ75N120S7XKSA1 is usually 5 days.

3.What payment methods are accepted for IGQ75N120S7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGQ75N120S7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGQ75N120S7XKSA1?

IGQ75N120S7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGQ75N120S7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGQ75N120S7XKSA1?

For technical support, including IGQ75N120S7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGQ75N120S7XKSA1 requirements.

6.How does Aetrix verify that IGQ75N120S7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IGQ75N120S7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGQ75N120S7XKSA1 meets industry standards.

7.What is the process for return or replacement of IGQ75N120S7XKSA1?

All IGQ75N120S7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGQ75N120S7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGQ75N120S7XKSA1 part is unused and in its original packaging.

Return procedure for IGQ75N120S7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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