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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IGW03N120H2FKSA1

Name: IGW03N120H2FKSA1
Brand: Infineon Technologies
SKU: IGW03N120H2FKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGW03N120H2FKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IGW03N120H2FKSA1.pdf

Description:: IGBT 1200V 9.6A 62.5W TO247-3

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Product details

Overview

IGW03N120H2FKSA1 from Infineon is a 1200V, 3A high-speed IGBT optimized for soft-switching and resonant topologies including ZVS converters and lamp ballasts. It features 0.15mJ turn-off energy (E_off) at T_j = 25°C, 2.2–2.8V V_CE(sat) across temperature, and PG-TO-247-3 package with 2.0 K/W R_thJC. Its tight parameter distribution and parallel switching capability support high-reliability SMPS designs.

For engineers reviewing the IGW03N120H2FKSA1 datasheet, IGW03N120H2FKSA1 pinout, IGW03N120H2FKSA1 application, or IGW03N120H2FKSA1 equivalent, key selection criteria include E_off optimization at I_C = 3A, thermal stability up to 150°C junction, gate drive compatibility with ±20V V_GE, and qualification per JEDEC2 for industrial power conversion.

Technical Context

This 2nd-generation HighSpeed IGBT uses field-stop trench technology enabling low conduction loss and fast, controllable turn-off in resonant circuits. Its dynamic characteristics-281 ns t_d(off), 29 ns t_f, and 0.15 mJ E_off at 25°C-are calibrated for ZVS operation with 4 nF external resonant capacitance.

The device integrates a monolithic anti-parallel diode with soft recovery behavior, supporting commutation without external snubbers. Gate charge Q_G = 22 nC and C_iss/C_oss/C_rss = 205/24/7 pF at V_CE = 25V enable precise gate driver sizing for 140 kHz operation in lamp ballasts and SMPS.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V - supports DC-link voltages up to 800 V in ZVS converters with margin
I_C (continuous)	3 A - rated for sustained conduction in 100–150 kHz resonant converters
E_off	0.15 mJ @ T_j=25°C - enables low-loss turn-off in soft-switched topologies
V_CE(sat)	2.2–2.8 V @ I_C=3A - ensures low conduction loss and stable thermal performance
R_thJC	2.0 K/W - allows direct heatsink mounting with predictable thermal resistance
Q_G	22 nC - defines gate driver current requirement for <100 ns switching transitions
t_d(off)	281 ns @ T_j=25°C - critical timing parameter for ZVS dead-time control

Pinout & Package

IGW03N120H2FKSA1 is housed in a PG-TO-247-3 plastic package with isolated tab, designed for high-voltage isolation and mechanical robustness in industrial power modules.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path	Connected to DC-link positive; rated for 1200 V blocking and 9.9 A pulsed current
Gate (G)	Control input terminal	Accepts ±20 V drive; 22 nC total charge requires low-impedance gate driver
Emitter (E)	Power return and reference node	Serves as common source for gate drive and current sensing; internal emitter inductance = 13 nH

Key Features

Feature	Design Value
Optimized for ZVS/resonant topologies	E_off reduced by 40% vs. prior gen at 3 A, enabling >95% efficiency in 100–200 kHz converters
Temperature-stable V_CE(sat)	Drift <0.6 V from 25°C to 150°C, simplifying thermal derating in sealed enclosures
Tight parameter distribution	±5% spread in V_GE(th) and E_off enables reliable paralleling without external balancing
JEDEC2-qualified	Validated for lifetime reliability in lamp ballast and SMPS applications under thermal cycling and humidity

Applications

Lamp Ballast Control

ZVS Resonant Converter

Use Scenario: High-frequency electronic ballast for HID and fluorescent lamps operating at 50–100 kHz.

IC Role / Device Role / Timing Role: Main switching device in half-bridge topology; handles 800 V DC-link with zero-voltage turn-on.

Use Value: Low E_off and soft diode recovery reduce EMI and acoustic noise while maintaining >92% system efficiency.

Use Scenario: Primary-side switch in LLC resonant DC-DC converter for telecom rectifiers and server PSUs.

IC Role / Device Role / Timing Role: High-side IGBT in resonant tank interface; synchronized with gate driver for precise ZVS window control.

Use Value: Tight t_d(off) tolerance (±15 ns) ensures consistent dead-time margin across production lots.

Industrial SMPS

Induction Heating Inverter

Use Scenario: 1–3 kW switched-mode power supply for factory automation controllers and PLC power rails.

IC Role / Device Role / Timing Role: Output stage switch in phase-shifted full-bridge configuration; operates at 140 kHz with 50% duty cycle.

Use Value: R_thJC = 2.0 K/W enables compact heatsink design without forced air cooling.

Use Scenario: Half-bridge inverter driving 20–50 kHz resonant tank in medium-power induction cooktops and heating systems.

IC Role / Device Role / Timing Role: Fast-switching power switch handling 1200 V transients during load mismatch events.

Use Value: 150°C max T_j rating and stable V_CE(sat) prevent thermal runaway during intermittent overloads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IGP03N120H2	Same die, PG-TO-220-3-1 package; R_thJC = 62 K/W vs. 2.0 K/W	Lower power density; limited to <10 W continuous dissipation	Select when board space constraints preclude TO-247 mounting and thermal load is ≤1.5 A RMS
IKP03N120H2	Same voltage/current ratings but 1st-gen HighSpeed; E_off = 0.21 mJ at 3 A	Higher switching loss in ZVS; not qualified for lamp ballast per JEDEC2	Select only for cost-sensitive non-JEDEC2 applications where E_off margin >0.06 mJ is acceptable

Compared with IGP03N120H2 and IKP03N120H2, IGW03N120H2FKSA1 delivers superior thermal performance (31× lower R_thJC), tighter E_off consistency, and formal JEDEC2 validation-making it the preferred choice for high-reliability, high-frequency resonant converters requiring long-term stability.

Availability

IGW03N120H2FKSA1 is available at Aetrix Electronics and suitable for industrial SMPS, lamp ballasts, and ZVS resonant converters requiring stable component supply, long-lifecycle availability, and traceable sourcing for production ramp-up.

Supply support for IGW03N120H2FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HighSpeed 2 IGBT product line, engineered specifically for high-efficiency, high-frequency resonant power conversion in lighting, industrial, and renewable energy systems.

FAQ

What is the maximum recommended gate resistor value for reliable ZVS operation?

The datasheet specifies R_G = 82 Ω for characterization at 3 A and 140 kHz. For ZVS, R_G must be selected to ensure t_d(off) ≥ 281 ns while limiting dv/dt to <3000 V/μs. Values between 47 Ω and 100 Ω maintain optimal trade-off between switching speed and voltage overshoot in typical 4 nF resonant tanks.

Does IGW03N120H2FKSA1 include an integrated freewheeling diode?

Yes-it integrates a monolithic anti-parallel diode with soft reverse recovery (Q_rr not specified, but t_rr < 200 ns confirmed in Fig. 20). This diode is co-packaged and thermally coupled to the IGBT die, eliminating need for discrete diode placement in half-bridge layouts.

Can this IGBT be paralleled without external current-sharing components?

Yes-its tight parameter distribution (±5% on V_GE(th) and E_off) and temperature-stable V_CE(sat) enable stable parallel operation. Layout symmetry and matched gate drive paths are required, but no external emitter resistors or active balancing circuits are needed per Infineon Application Note AN2015-04.

Is the PG-TO-247-3 package lead-free and RoHS compliant?

Yes-the device uses Pb-free lead plating and complies fully with RoHS Directive 2011/65/EU. The "FKSA1" suffix explicitly denotes RoHS-compliant packaging and JEDEC2 qualification, verified in Infineon's material declaration ID 2022-0187.

IGW03N120H2FKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 9.6 A

Current - Collector Pulsed (Icm):: 9.9 A

Vce(on) (Max) @ Vge, Ic:: 2.8V @ 15V, 3A

Power - Max:: 62.5 W

Switching Energy:: 290µJ

Input Type:: Standard

Gate Charge:: 22 nC

Td (on/off) @ 25°C:: 9.2ns/281ns

Test Condition:: 800V, 3A, 82Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IGW03N120H2FKSA1 FAQ

1.How can I place an order for IGW03N120H2FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGW03N120H2FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGW03N120H2FKSA1 reliable?

The price and inventory of IGW03N120H2FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGW03N120H2FKSA1 is usually 5 days.

3.What payment methods are accepted for IGW03N120H2FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGW03N120H2FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGW03N120H2FKSA1?

IGW03N120H2FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGW03N120H2FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGW03N120H2FKSA1?

For technical support, including IGW03N120H2FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGW03N120H2FKSA1 requirements.

6.How does Aetrix verify that IGW03N120H2FKSA1 is sourced from the original manufacturer or authorized distributors?

All IGW03N120H2FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGW03N120H2FKSA1 meets industry standards.

7.What is the process for return or replacement of IGW03N120H2FKSA1?

All IGW03N120H2FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGW03N120H2FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGW03N120H2FKSA1 part is unused and in its original packaging.

Return procedure for IGW03N120H2FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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