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Infineon Technologies IGW15T120FKSA1

Part No.:
IGW15T120FKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIGW15T120FKSA1.pdf
Description:
IGBT 1200V 30A TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,169

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Product details

Overview

IGW15T120FKSA1 from Infineon is a 1200 V, 15 A low-loss NPT IGBT in TrenchStop® and Fieldstop technology, optimized for high-voltage switching in frequency converters and uninterruptible power supplies. It delivers 1.7 V VCE(sat) at 25°C, 10 µs short-circuit withstand time, and ±20 V gate-emitter voltage rating.

For engineers reviewing the IGW15T120FKSA1 datasheet, IGW15T120FKSA1 pinout, IGW15T120FKSA1 application, or IGW15T120FKSA1 equivalent, key selection criteria include VCE(sat) temperature stability, gate charge (85 nC), thermal resistance (RthJC = 1.1 K/W), and safe operating area up to 45 A pulsed current under 1200 V.

Technical Context

This IGBT uses Non-Punch-Through (NPT) structure with TrenchStop® and Fieldstop technology to achieve tight parameter distribution and positive temperature coefficient of VCE(sat), enabling stable parallel operation. Its 10 µs short-circuit capability and 1.1 K/W junction-to-case thermal resistance support robust operation in high-reliability industrial inverters.

The device features low EMI emissions and low gate charge (85 nC), reducing driver losses and simplifying gate drive design. Switching energy is characterized across temperature (25–150°C), voltage (400–800 V), and gate resistance (5–110 Ω), supporting precise loss modeling in hard-switched topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VCE1200 V - supports DC bus voltages up to 900 V in three-phase rectified systems with margin
IC (continuous)15 A at TC = 100°C - defines steady-state conduction capability in heatsink-limited designs
VCE(sat)1.7 V @ Tj = 25°C - sets conduction loss baseline; rises to 2.2 V @ 150°C with predictable slope
tSC10 µs @ VGE = 15 V - enables reliable desaturation-based short-circuit protection without external crowbar
QGate85 nC @ VCC = 960 V - determines gate driver peak current requirement and turn-on/turn-off timing control
RthJC1.1 K/W - allows direct thermal interface to heatsink; enables 110 W dissipation at ΔT = 121 K
Eoff2.1 mJ @ Tj = 150°C - quantifies turn-off loss in high-temperature, high-current hard-switching conditions

Pinout & Package

IGW15T120FKSA1 is housed in PG-TO-247-3 package, a through-hole, single-island thermally optimized variant of TO-247 with 3 terminals: Collector (C), Gate (G), and Emitter (E). The case serves as the collector connection, and the package meets RoHS and JEDEC J-STD-020 requirements.

Pin/TerminalCircuit RoleDesign Meaning
Collector (C)Main high-side power terminalConnected to DC bus or inverter leg high-side; carries full load current and withstands 1200 V blocking
Gate (G)Control inputReceives ±20 V gate drive signal; 85 nC total charge requires ≥2 A peak driver capability for <100 ns switching
Emitter (E)Power return and reference nodeServes as source of load current and ground reference for gate drive; internal emitter inductance is 13 nH (measured 5 mm from case)

Key Features

FeatureDesign Value
Positive VCE(sat) tempcoEnables stable current sharing in paralleled IGBTs without external current-balancing resistors
10 µs short-circuit withstandAllows time for controller-level fault detection and shutdown before thermal runaway occurs
TrenchStop® + Fieldstop architectureDelivers 1.7 V VCE(sat) with low tail current, reducing switching losses in 4–20 kHz motor drives
Low EMI signatureReduces need for snubbers and EMI filter sizing in UPS and solar inverter front-end stages
JEDEC-qualified reliabilityValidated per J-STD-020 (reflow) and JESD-022 (storage), supporting industrial 15-year lifecycle deployments

Applications

Industrial Motor DrivesUninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage in 5–15 kVA variable-frequency drives for HVAC and pumps.

IC Role / Device Role / Timing Role: High-side switch in 6-pack IGBT module configuration; operates at 4–16 kHz PWM with 600 V DC link.

Use Value: 1.7 V VCE(sat) and 2.1 mJ Eoff at 150°C reduce thermal stress and improve efficiency over legacy 1200 V IGBTs.

Use Scenario: Online double-conversion UPS output inverter delivering clean 230 VAC/50 Hz sine wave.

IC Role / Device Role / Timing Role: Final-stage power switch handling bidirectional energy flow during battery backup mode.

Use Value: 10 µs short-circuit tolerance and 45 A pulsed SOA enable robust overload handling without sacrificial fusing.

Solar Photovoltaic InvertersInduction Heating Systems

Use Scenario: DC–AC stage in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: Low-loss switching element in NPC or T-type three-level topology operating at 12–20 kHz.

Use Value: Tight VCE(sat) distribution (±0.1 V) ensures balanced conduction loss across multi-level legs.

Use Scenario: Resonant half-bridge in 20–100 kW induction heating generators for metal forging.

IC Role / Device Role / Timing Role: Hard-switched main switch controlling resonant tank current at 10–50 kHz.

Use Value: Low gate charge (85 nC) and 1.1 K/W RthJC allow compact heatsinking and fast gate drive response in high-duty-cycle operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXYS IXGN15N120B31200 V/15 A, 2.0 V VCE(sat), 15 µs SCWT, higher QG (110 nC)Higher conduction loss but superior short-circuit ruggedness; suited for infrequent overload scenariosPrefer when system-level fault clearing >15 µs is guaranteed and gate drive can support higher QG
STMicroelectronics STGW15H120DF21200 V/15 A, 1.85 V VCE(sat), 8 µs SCWT, lower RthJC (0.9 K/W)Lower thermal resistance improves power density; reduced SCWT limits fault-handling marginChoose where heatsink space is constrained and short-circuit protection is implemented via fast digital controllers

Compared with IXGN15N120B3 and STGW15H120DF2, IGW15T120FKSA1 offers the lowest VCE(sat) (1.7 V) and balanced trade-off between short-circuit robustness (10 µs) and thermal performance (1.1 K/W), making it optimal for cost-sensitive, medium-reliability industrial inverters.

Availability

IGW15T120FKSA1 is available at Aetrix Electronics and suitable for frequency converters, uninterruptible power supplies, and solar photovoltaic inverters requiring stable component supply and long-term industrial availability.

Supply support for IGW15T120FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The TrenchStop® IGBT series targets high-efficiency, high-reliability power conversion in 600–1200 V applications, emphasizing low conduction loss, rugged short-circuit behavior, and thermal stability for motor drives and UPS systems.

FAQ

What is the maximum gate-emitter voltage rating for IGW15T120FKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC. Exceeding this rating risks permanent gate oxide damage. Recommended operating range is –10 V to +15 V for reliable turn-off and noise immunity. Gate drive circuits must limit transient overshoot using clamping diodes or active gate control.

Does IGW15T120FKSA1 include an integrated anti-parallel diode?

No, IGW15T120FKSA1 is a discrete IGBT die in a 3-pin TO-247 package without an integrated freewheeling diode. External ultrafast recovery diodes (e.g., IDH15E120, STTH1512D) must be used in complementary pairs for inductive load commutation.

How does junction temperature affect VCE(sat) in this IGBT?

VCE(sat) increases linearly with junction temperature: from 1.7 V at 25°C to 2.2 V at 150°C at IC = 15 A. This positive temperature coefficient ensures inherent current sharing in paralleled devices and prevents thermal runaway during overload.

Can IGW15T120FKSA1 be operated in parallel configurations?

Yes, its NPT structure provides a positive temperature coefficient of VCE(sat), enabling stable current sharing without external emitter resistors. Successful parallel operation requires matched gate drive layout, identical PCB trace inductance (<5 nH difference), and thermal coupling via shared heatsink to minimize ΔTj.

IGW15T120FKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop®
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
30 A
Current - Collector Pulsed (Icm):
45 A
Vce(on) (Max) @ Vge, Ic:
2.2V @ 15V, 15A
Power - Max:
110 W
Switching Energy:
2.7mJ
Input Type:
Standard
Gate Charge:
85 nC
Td (on/off) @ 25°C:
50ns/520ns
Test Condition:
600V, 15A, 56Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-1

IGW15T120FKSA1 FAQ

1.How can I place an order for IGW15T120FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGW15T120FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGW15T120FKSA1 reliable?

The price and inventory of IGW15T120FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGW15T120FKSA1 is usually 5 days.

3.What payment methods are accepted for IGW15T120FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGW15T120FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGW15T120FKSA1?

IGW15T120FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGW15T120FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGW15T120FKSA1?

For technical support, including IGW15T120FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGW15T120FKSA1 requirements.

6.How does Aetrix verify that IGW15T120FKSA1 is sourced from the original manufacturer or authorized distributors?

All IGW15T120FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGW15T120FKSA1 meets industry standards.

7.What is the process for return or replacement of IGW15T120FKSA1?

All IGW15T120FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGW15T120FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGW15T120FKSA1 part is unused and in its original packaging.

Return procedure for IGW15T120FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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