Infineon Technologies IGW25N120H3FKSA1

Overview

IGW25N120H3FKSA1 from Infineon is a high-speed 1200 V, 25 A Trench-Fieldstop IGBT optimized for high-frequency switching in hard-switched converters. It delivers 2.4 V typical V_CE(sat) at 25 A/15 V_GE, 2.65 mJ total switching energy at 600 V/25 A/25 °C, and supports 175 °C maximum junction temperature - enabling compact solar inverters and UPS systems with reduced heatsink requirements.

For engineers reviewing the IGW25N120H3FKSA1 datasheet, IGW25N120H3FKSA1 pinout, IGW25N120H3FKSA1 application, or IGW25N120H3FKSA1 equivalent, key selection criteria include its 0.46 K/W R_th(j-c), <500 µJ total switching loss capability, gate charge of 115 nC, and compatibility with SiC diodes like IDH15S120 for ultra-low EMI operation.

Technical Context

This IGBT employs Infineon's TRENCHSTOP™ H3 technology, combining trench-gate structure with fieldstop layer to simultaneously minimize conduction loss (V_CE(sat)) and switching loss (E_on/E_off). Its dynamic performance is characterized under standardized 600 V/25 A inductive load conditions with 23 Ω gate resistor and 80 nH stray inductance.

The device operates within a -40 °C to +175 °C junction temperature range and is qualified per JEDEC standards for industrial power conversion. Short-circuit withstand time is specified at 10 µs (V_CC ≤ 600 V, V_GE = 15 V, T_vj = 175 °C), supporting robust protection schemes in critical UPS and welding applications.

Key Specifications

Pinout & Package

IGW25N120H3FKSA1 uses the PG-TO247-3 package with isolated collector on the backside. The case serves as the collector terminal, enabling low-inductance mounting and efficient heat transfer to the heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Compared with IXGN25N120B3 and STGW25H120DF, IGW25N120H3FKSA1 offers the lowest total switching loss and best thermal resistance - making it optimal for space-constrained, high-efficiency solar and UPS inverters where thermal management and efficiency are prioritized over gate drive simplicity or EMI margin.

Availability

IGW25N120H3FKSA1 is available at Aetrix Electronics and suitable for solar inverters, uninterruptible power supplies, and welding converters requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial production programs.

Supply support for IGW25N120H3FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D centers.

This device belongs to Infineon's TRENCHSTOP™ H3 IGBT product line, engineered specifically for high-efficiency, high-frequency industrial power conversion - balancing low conduction loss, fast switching, and rugged short-circuit capability.

FAQ

What is the recommended gate resistor value for IGW25N120H3FKSA1 in a 20 kHz solar inverter?

Infineon specifies 23 Ω for characterization at 600 V/25 A, but for 20 kHz operation in solar inverters, a 15–18 Ω non-inductive resistor is recommended to balance switching loss (E_ts) and dV/dt-induced EMI. Lower values increase peak gate current and require robust driver capability; higher values slow switching and raise E_off.

Can IGW25N120H3FKSA1 be used with a 12 V gate drive instead of 15 V?

Yes, but V_GE = 12 V increases V_CE(sat) by ~0.15–0.2 V across temperature, raising conduction loss by ~6–8%. The device remains functional, but thermal design must account for the added loss - especially above 100 °C case temperature where V_CE(sat) rises further.

Is the backside collector electrically isolated from the mounting screw hole in PG-TO247-3?

No - the entire metal tab (backside) is the collector terminal and is not isolated. Mounting requires electrically insulating thermal interface material (e.g., ceramic washer or silicone pad) when the heatsink is grounded or at a different potential than the collector circuit.

Does IGW25N120H3FKSA1 have an integrated anti-parallel diode?

No - it is a discrete IGBT without an integrated freewheeling diode. Infineon recommends pairing it with the SiC diode IDH15S120 for optimal performance, leveraging its fast recovery, low Q_rr, and zero reverse recovery loss in high-frequency hard-switched applications.