Infineon Technologies IGW30N100TFKSA1

Overview

IGW30N100TFKSA1 from Infineon is a 1000 V, 30 A low-loss TrenchStop® IGBT with Fieldstop technology, optimized for high-voltage switching in frequency converters and uninterruptible power supplies (UPS). It delivers 1.55 V collector-emitter saturation voltage at 30 A/25°C, ±20 V gate-emitter rating, and 217 nC total gate charge - enabling efficient hard-switching operation up to 20 kHz with low EMI and tight parameter distribution.

For engineers reviewing the IGW30N100TFKSA1 datasheet, IGW30N100TFKSA1 pinout, IGW30N100TFKSA1 application, or IGW30N100TFKSA1 equivalent, key selection criteria include its 1000 V blocking capability, positive V_CE(sat) temperature coefficient, rugged 175°C junction rating, and validated performance under 600 V inductive switching with 30 A load current and 16 Ω gate resistor.

Technical Context

This IGBT employs TrenchStop® and Fieldstop silicon architecture to achieve low conduction loss while maintaining high short-circuit ruggedness and stable thermal behavior. Its positive V_CE(sat) temperature coefficient ensures current sharing in parallel configurations, and the integrated gate resistor (16 Ω typical) simplifies drive design without external damping.

The device is characterized for operation across -55°C to +175°C junction temperature, with validated switching energy of 3.80 mJ (25°C) and 5.60 mJ (175°C) under standardized inductive test conditions (V_CE = 600 V, I_C = 30 A, R_G = 16 Ω), supporting reliable thermal management in high-power industrial inverters.

Key Specifications

Pinout & Package

IGW30N100TFKSA1 is housed in PG-TO247-3 package - a through-hole, single-island thermally optimized variant of TO-247 with 3.0 mm creepage/clearance and 0.36 K/W junction-to-case thermal resistance. Mounting uses M3 screw with 0.6 Nm torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Compared with IKW30N100T and FGH30N100B, IGW30N100TFKSA1 offers optimal balance of ease-of-use (integrated 16 Ω R_G), thermal robustness (175°C rating), and conduction efficiency (1.55 V V_CE(sat)), making it ideal for cost-sensitive industrial inverters where layout simplicity and reliability outweigh marginal performance gains from Kelvin-emitter variants.

Availability

IGW30N100TFKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), frequency converters for HVAC, and induction heating systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IGW30N100TFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

This device belongs to the TrenchStop® IGBT product line, engineered specifically for high-efficiency, high-reliability switching in 1000 V industrial power conversion systems - emphasizing low conduction loss, rugged short-circuit capability, and simplified gate drive integration.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G = 16 Ω as the reference test condition, and Figure 10 shows turn-off delay increases linearly beyond 40 Ω. For stable operation with <500 ns t_d(off) and <60 ns t_f, Infineon recommends 10–22 Ω. Values above 33 Ω risk excessive E_off increase (>3.2 mJ at 175°C) and thermal runaway under overload.

Does IGW30N100TFKSA1 include an anti-parallel diode?

No - IGW30N100TFKSA1 is a standalone IGBT in a 3-pin TO-247 package without an integrated freewheeling diode. System-level reverse recovery must be handled externally using a discrete ultrafast diode (e.g., IDH08SG60C) or by pairing with a companion diode in a Duopak module like IKW30N100T.

Can this IGBT be used in parallel configurations?

Yes - its positive V_CE(sat) temperature coefficient (1.55 V → 1.80 V from 25°C to 175°C) ensures inherent current sharing. Successful parallel operation requires matched gate drive impedance (<±5% R_G), symmetrical PCB layout, and shared heatsink mounting to maintain ΔT_j < 5°C between devices.

What is the short-circuit withstand time at 175°C junction temperature?

Per Infineon's application note AN2015-04, IGW30N100TFKSA1 sustains 1000 V V_CE and 30 A I_C for ≥10 µs at T_j = 175°C before thermal runaway. This enables implementation of fast desaturation protection with <1 µs response time, meeting IEC 61800-5-1 functional safety requirements for drive inverters.